JPS4929770A - - Google Patents
Info
- Publication number
- JPS4929770A JPS4929770A JP7078372A JP7078372A JPS4929770A JP S4929770 A JPS4929770 A JP S4929770A JP 7078372 A JP7078372 A JP 7078372A JP 7078372 A JP7078372 A JP 7078372A JP S4929770 A JPS4929770 A JP S4929770A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7078372A JPS4929770A (en) | 1972-07-17 | 1972-07-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7078372A JPS4929770A (en) | 1972-07-17 | 1972-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4929770A true JPS4929770A (en) | 1974-03-16 |
Family
ID=13441452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7078372A Pending JPS4929770A (en) | 1972-07-17 | 1972-07-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4929770A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819954U (en) * | 1981-07-29 | 1983-02-07 | 東京パ−ツ株式会社 | Container for viscous liquids with brushed lid |
| US5998810A (en) * | 1994-12-19 | 1999-12-07 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer |
| US6388323B1 (en) | 1994-02-28 | 2002-05-14 | Sumitomo Chemical Co., Ltd. | Electrode material and electrode for III-V group compound semiconductor |
| JP2015530967A (en) * | 2012-08-24 | 2015-10-29 | シックスポイント マテリアルズ， インコーポレイテッド | Bismuth-doped semi-insulating III-nitride wafer and production method thereof |
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1972
- 1972-07-17 JP JP7078372A patent/JPS4929770A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819954U (en) * | 1981-07-29 | 1983-02-07 | 東京パ−ツ株式会社 | Container for viscous liquids with brushed lid |
| JPS6030204Y2 (en) * | 1981-07-29 | 1985-09-11 | 東京パ−ツ株式会社 | Container for viscous liquids with brushed lid |
| US6388323B1 (en) | 1994-02-28 | 2002-05-14 | Sumitomo Chemical Co., Ltd. | Electrode material and electrode for III-V group compound semiconductor |
| US5998810A (en) * | 1994-12-19 | 1999-12-07 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer |
| JP2015530967A (en) * | 2012-08-24 | 2015-10-29 | シックスポイント マテリアルズ， インコーポレイテッド | Bismuth-doped semi-insulating III-nitride wafer and production method thereof |