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JPS4939319B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1969-02-14 |
1974-10-24 |
|
|
|
US3749984A
(en)
*
|
1969-04-11 |
1973-07-31 |
Rca Corp |
Electroacoustic semiconductor device employing an igfet
|
|
US3621328A
(en)
*
|
1969-05-13 |
1971-11-16 |
Iit Res Inst |
Information display system
|
|
JPS5438491B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1969-09-22 |
1979-11-21 |
|
|
|
JPS58119218A
(ja)
*
|
1982-01-07 |
1983-07-15 |
Murata Mfg Co Ltd |
圧電振動装置
|
|
JPS58119217A
(ja)
*
|
1982-01-07 |
1983-07-15 |
Murata Mfg Co Ltd |
圧電音叉
|
|
JPS58137317A
(ja)
*
|
1982-02-09 |
1983-08-15 |
Nec Corp |
圧電薄膜複合振動子
|
|
US4445066A
(en)
*
|
1982-06-30 |
1984-04-24 |
Murata Manufacturing Co., Ltd. |
Electrode structure for a zinc oxide thin film transducer
|
|
US4556812A
(en)
*
|
1983-10-13 |
1985-12-03 |
The United States Of America As Represented By The United States Department Of Energy |
Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate
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|
US4502932A
(en)
*
|
1983-10-13 |
1985-03-05 |
The United States Of America As Represented By The United States Department Of Energy |
Acoustic resonator and method of making same
|
|
US4640756A
(en)
*
|
1983-10-25 |
1987-02-03 |
The United States Of America As Represented By The United States Department Of Energy |
Method of making a piezoelectric shear wave resonator
|
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JPS60189307A
(ja)
*
|
1984-03-09 |
1985-09-26 |
Toshiba Corp |
圧電薄膜共振器およびその製造方法
|
|
DE3682378D1
(de)
*
|
1985-12-20 |
1991-12-12 |
Avl Verbrennungskraft Messtech |
Messwertaufnehmer mit einem flexiblen piezoelektrischen film als messelement.
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US5194836A
(en)
*
|
1990-03-26 |
1993-03-16 |
Westinghouse Electric Corp. |
Thin film, microwave frequency manifolded filter bank
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US5231327A
(en)
*
|
1990-12-14 |
1993-07-27 |
Tfr Technologies, Inc. |
Optimized piezoelectric resonator-based networks
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US5162691A
(en)
*
|
1991-01-22 |
1992-11-10 |
The United States Of America As Represented By The Secretary Of The Army |
Cantilevered air-gap type thin film piezoelectric resonator
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US5630949A
(en)
*
|
1995-06-01 |
1997-05-20 |
Tfr Technologies, Inc. |
Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency
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US6051907A
(en)
*
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1996-10-10 |
2000-04-18 |
Nokia Mobile Phones Limited |
Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
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US5873154A
(en)
*
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1996-10-17 |
1999-02-23 |
Nokia Mobile Phones Limited |
Method for fabricating a resonator having an acoustic mirror
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WO1998016956A1
(en)
*
|
1996-10-17 |
1998-04-23 |
Nokia Mobile Phones Limited |
Method for fabricating fbars on glass substrates
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US5872493A
(en)
*
|
1997-03-13 |
1999-02-16 |
Nokia Mobile Phones, Ltd. |
Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
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US5910756A
(en)
*
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1997-05-21 |
1999-06-08 |
Nokia Mobile Phones Limited |
Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
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US6081171A
(en)
*
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1998-04-08 |
2000-06-27 |
Nokia Mobile Phones Limited |
Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
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KR100398363B1
(ko)
*
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2000-12-05 |
2003-09-19 |
삼성전기주식회사 |
Ｆｂａｒ 소자 및 그 제조방법
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DE102006055345A1
(de)
*
|
2006-11-23 |
2008-05-29 |
BSH Bosch und Siemens Hausgeräte GmbH |
Geschirrspüler mit einem System zur Zerstäubung von Spülflüssigkeit und Verfahren zum Betrieb desselben
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JP5309898B2
(ja)
*
|
2008-10-31 |
2013-10-09 |
セイコーエプソン株式会社 |
圧力センサ装置
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US8291559B2
(en)
*
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2009-02-24 |
2012-10-23 |
Epcos Ag |
Process for adapting resonance frequency of a BAW resonator
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US8513863B2
(en)
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2009-06-11 |
2013-08-20 |
Qualcomm Mems Technologies, Inc. |
Piezoelectric resonator with two layers
|