JPS4924373A - - Google Patents

Info

Publication number
JPS4924373A
JPS4924373A JP4052673A JP4052673A JPS4924373A JP S4924373 A JPS4924373 A JP S4924373A JP 4052673 A JP4052673 A JP 4052673A JP 4052673 A JP4052673 A JP 4052673A JP S4924373 A JPS4924373 A JP S4924373A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4052673A
Other languages
Japanese (ja)
Other versions
JPS5317394B2 (US06262066-20010717-C00315.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4924373A publication Critical patent/JPS4924373A/ja
Publication of JPS5317394B2 publication Critical patent/JPS5317394B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP4052673A 1972-05-11 1973-04-11 Expired JPS5317394B2 (US06262066-20010717-C00315.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25244572A 1972-05-11 1972-05-11

Publications (2)

Publication Number Publication Date
JPS4924373A true JPS4924373A (US06262066-20010717-C00315.png) 1974-03-04
JPS5317394B2 JPS5317394B2 (US06262066-20010717-C00315.png) 1978-06-08

Family

ID=22956030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4052673A Expired JPS5317394B2 (US06262066-20010717-C00315.png) 1972-05-11 1973-04-11

Country Status (5)

Country Link
JP (1) JPS5317394B2 (US06262066-20010717-C00315.png)
CA (1) CA985793A (US06262066-20010717-C00315.png)
DE (1) DE2314747A1 (US06262066-20010717-C00315.png)
FR (1) FR2183709A1 (US06262066-20010717-C00315.png)
IT (1) IT979178B (US06262066-20010717-C00315.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5112779A (en) * 1974-07-23 1976-01-31 Tokyo Shibaura Electric Co Handotaisochito sonoseizohoho
JPS52146578A (en) * 1976-05-28 1977-12-06 Texas Instruments Inc Method of producing resistance element and semiconductor device having same element
JPS54136279A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404321A (en) * 1963-01-29 1968-10-01 Nippon Electric Co Transistor body enclosing a submerged integrated resistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547292A (fr) * 1966-12-19 1968-11-22 Gen Electric Perfectionnements aux dispositifs à semiconducteur
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404321A (en) * 1963-01-29 1968-10-01 Nippon Electric Co Transistor body enclosing a submerged integrated resistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5112779A (en) * 1974-07-23 1976-01-31 Tokyo Shibaura Electric Co Handotaisochito sonoseizohoho
JPS52146578A (en) * 1976-05-28 1977-12-06 Texas Instruments Inc Method of producing resistance element and semiconductor device having same element
JPS54136279A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
FR2183709B1 (US06262066-20010717-C00315.png) 1976-05-28
CA985793A (en) 1976-03-16
IT979178B (it) 1974-09-30
DE2314747A1 (de) 1973-11-22
JPS5317394B2 (US06262066-20010717-C00315.png) 1978-06-08
FR2183709A1 (en) 1973-12-21

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