JPS4919766A - - Google Patents

Info

Publication number
JPS4919766A
JPS4919766A JP5991672A JP5991672A JPS4919766A JP S4919766 A JPS4919766 A JP S4919766A JP 5991672 A JP5991672 A JP 5991672A JP 5991672 A JP5991672 A JP 5991672A JP S4919766 A JPS4919766 A JP S4919766A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5991672A
Other versions
JPS5312359B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5991672A priority Critical patent/JPS5312359B2/ja
Publication of JPS4919766A publication Critical patent/JPS4919766A/ja
Publication of JPS5312359B2 publication Critical patent/JPS5312359B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP5991672A 1972-06-14 1972-06-14 Expired JPS5312359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5991672A JPS5312359B2 (ja) 1972-06-14 1972-06-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5991672A JPS5312359B2 (ja) 1972-06-14 1972-06-14

Publications (2)

Publication Number Publication Date
JPS4919766A true JPS4919766A (ja) 1974-02-21
JPS5312359B2 JPS5312359B2 (ja) 1978-04-28

Family

ID=13126919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5991672A Expired JPS5312359B2 (ja) 1972-06-14 1972-06-14

Country Status (1)

Country Link
JP (1) JPS5312359B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434676A (en) * 1977-08-23 1979-03-14 Fujitsu Ltd Vapor growth method and apparatus for high-purity semiconductor layer
JPS61104079A (ja) * 1984-10-25 1986-05-22 モートン チオコール インコーポレーテツド 混成有機金属化合物及び該化合物を用いる金属有機化学的蒸着方法
JPS6481312A (en) * 1987-09-24 1989-03-27 Nec Corp Vapor phase growth method of compound semiconductor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105926636B (zh) * 2016-05-13 2018-03-20 中国矿业大学 深基坑冻结封底施工方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434676A (en) * 1977-08-23 1979-03-14 Fujitsu Ltd Vapor growth method and apparatus for high-purity semiconductor layer
JPS5628374B2 (ja) * 1977-08-23 1981-07-01
JPS61104079A (ja) * 1984-10-25 1986-05-22 モートン チオコール インコーポレーテツド 混成有機金属化合物及び該化合物を用いる金属有機化学的蒸着方法
JPH0357188B2 (ja) * 1984-10-25 1991-08-30
JPS6481312A (en) * 1987-09-24 1989-03-27 Nec Corp Vapor phase growth method of compound semiconductor

Also Published As

Publication number Publication date
JPS5312359B2 (ja) 1978-04-28

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