JPS4917182A - - Google Patents
Info
- Publication number
- JPS4917182A JPS4917182A JP5045972A JP5045972A JPS4917182A JP S4917182 A JPS4917182 A JP S4917182A JP 5045972 A JP5045972 A JP 5045972A JP 5045972 A JP5045972 A JP 5045972A JP S4917182 A JPS4917182 A JP S4917182A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5045972A JPS4917182A (de) | 1972-05-22 | 1972-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5045972A JPS4917182A (de) | 1972-05-22 | 1972-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4917182A true JPS4917182A (de) | 1974-02-15 |
Family
ID=12859444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5045972A Pending JPS4917182A (de) | 1972-05-22 | 1972-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4917182A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979183A (de) * | 1972-12-01 | 1974-07-31 | ||
| JPS5368178A (en) * | 1976-11-30 | 1978-06-17 | Handotai Kenkyu Shinkokai | Fet transistor |
| JP2002543593A (ja) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | 高温利用可能なＳｉＣ電界効果トランジスタ、前記トランジスタの使用およびその製造方法 |
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1972
- 1972-05-22 JP JP5045972A patent/JPS4917182A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979183A (de) * | 1972-12-01 | 1974-07-31 | ||
| JPS5521465B2 (de) * | 1972-12-01 | 1980-06-10 | ||
| JPS5368178A (en) * | 1976-11-30 | 1978-06-17 | Handotai Kenkyu Shinkokai | Fet transistor |
| JPS5626148B2 (de) * | 1976-11-30 | 1981-06-17 | ||
| JP2002543593A (ja) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | 高温利用可能なＳｉＣ電界効果トランジスタ、前記トランジスタの使用およびその製造方法 |