JPS4916235A - - Google Patents

Info

Publication number
JPS4916235A
JPS4916235A JP5670272A JP5670272A JPS4916235A JP S4916235 A JPS4916235 A JP S4916235A JP 5670272 A JP5670272 A JP 5670272A JP 5670272 A JP5670272 A JP 5670272A JP S4916235 A JPS4916235 A JP S4916235A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5670272A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5670272A priority Critical patent/JPS4916235A/ja
Publication of JPS4916235A publication Critical patent/JPS4916235A/ja
Pending legal-status Critical Current

Links

JP5670272A 1972-06-06 1972-06-06 Pending JPS4916235A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5670272A JPS4916235A (ko) 1972-06-06 1972-06-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5670272A JPS4916235A (ko) 1972-06-06 1972-06-06

Publications (1)

Publication Number Publication Date
JPS4916235A true JPS4916235A (ko) 1974-02-13

Family

ID=13034783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5670272A Pending JPS4916235A (ko) 1972-06-06 1972-06-06

Country Status (1)

Country Link
JP (1) JPS4916235A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204543B1 (en) 1997-09-11 2001-03-20 Nec Corporation Semiconductor device having LDD structure and method for producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204543B1 (en) 1997-09-11 2001-03-20 Nec Corporation Semiconductor device having LDD structure and method for producing the same

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