JPS4915385A - - Google Patents
Info
- Publication number
- JPS4915385A JPS4915385A JP4858072A JP4858072A JPS4915385A JP S4915385 A JPS4915385 A JP S4915385A JP 4858072 A JP4858072 A JP 4858072A JP 4858072 A JP4858072 A JP 4858072A JP S4915385 A JPS4915385 A JP S4915385A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4858072A JPS4915385A (ja) | 1972-05-18 | 1972-05-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4858072A JPS4915385A (ja) | 1972-05-18 | 1972-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4915385A true JPS4915385A (ja) | 1974-02-09 |
Family
ID=12807322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4858072A Pending JPS4915385A (ja) | 1972-05-18 | 1972-05-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4915385A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742124A (en) * | 1980-08-27 | 1982-03-09 | Nippon Denso Co Ltd | Forming method for electrode of semiconductor element |
| JPH01185920A (ja) * | 1988-01-21 | 1989-07-25 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
| JPH02274881A (ja) * | 1989-04-17 | 1990-11-09 | C Uyemura & Co Ltd | シリコンデバイスの製造方法 |
| JP2005505913A (ja) * | 2001-05-22 | 2005-02-24 | ゼネラル セミコンダクター，インク． | 低電圧パンチスルー双方向過渡電圧抑制素子及びその製造方法 |
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1972
- 1972-05-18 JP JP4858072A patent/JPS4915385A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742124A (en) * | 1980-08-27 | 1982-03-09 | Nippon Denso Co Ltd | Forming method for electrode of semiconductor element |
| JPH01185920A (ja) * | 1988-01-21 | 1989-07-25 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
| JPH02274881A (ja) * | 1989-04-17 | 1990-11-09 | C Uyemura & Co Ltd | シリコンデバイスの製造方法 |
| JP2005505913A (ja) * | 2001-05-22 | 2005-02-24 | ゼネラル セミコンダクター，インク． | 低電圧パンチスルー双方向過渡電圧抑制素子及びその製造方法 |
| JP4685333B2 (ja) * | 2001-05-22 | 2011-05-18 | ゼネラル セミコンダクター，インク． | 低電圧パンチスルー双方向過渡電圧抑制素子 |