JPS4914390B1 - - Google Patents
Info
- Publication number
- JPS4914390B1 JPS4914390B1 JP44086216A JP8621669A JPS4914390B1 JP S4914390 B1 JPS4914390 B1 JP S4914390B1 JP 44086216 A JP44086216 A JP 44086216A JP 8621669 A JP8621669 A JP 8621669A JP S4914390 B1 JPS4914390 B1 JP S4914390B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44086216A JPS4914390B1 (enExample) | 1969-10-29 | 1969-10-29 | |
| US84332A US3665265A (en) | 1969-10-29 | 1970-10-27 | Mos integrated circuit semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44086216A JPS4914390B1 (enExample) | 1969-10-29 | 1969-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4914390B1 true JPS4914390B1 (enExample) | 1974-04-06 |
Family
ID=13880571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44086216A Pending JPS4914390B1 (enExample) | 1969-10-29 | 1969-10-29 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3665265A (enExample) |
| JP (1) | JPS4914390B1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS614637U (ja) * | 1984-06-13 | 1986-01-11 | 弘之 上河 | 指圧器 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3122382A1 (de) * | 1981-06-05 | 1982-12-23 | Ibm Deutschland | Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur |
| SE465193B (sv) * | 1989-12-06 | 1991-08-05 | Ericsson Telefon Ab L M | Foer hoegspaenning avsedd ic-krets |
| TW299475B (enExample) * | 1993-03-30 | 1997-03-01 | Siemens Ag | |
| US5366911A (en) * | 1994-05-11 | 1994-11-22 | United Microelectronics Corporation | VLSI process with global planarization |
| US7095101B2 (en) * | 2000-11-15 | 2006-08-22 | Jiahn-Chang Wu | Supporting frame for surface-mount diode package |
-
1969
- 1969-10-29 JP JP44086216A patent/JPS4914390B1/ja active Pending
-
1970
- 1970-10-27 US US84332A patent/US3665265A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS614637U (ja) * | 1984-06-13 | 1986-01-11 | 弘之 上河 | 指圧器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3665265A (en) | 1972-05-23 |