JPS49131388A - - Google Patents

Info

Publication number
JPS49131388A
JPS49131388A JP4388173A JP4388173A JPS49131388A JP S49131388 A JPS49131388 A JP S49131388A JP 4388173 A JP4388173 A JP 4388173A JP 4388173 A JP4388173 A JP 4388173A JP S49131388 A JPS49131388 A JP S49131388A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4388173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4388173A priority Critical patent/JPS49131388A/ja
Priority to DE19742418560 priority patent/DE2418560A1/en
Priority to CA197,701A priority patent/CA1015867A/en
Priority to GB1680074A priority patent/GB1472113A/en
Priority to FR7413549A priority patent/FR2226750B1/fr
Priority to AT323074A priority patent/AT373443B/en
Priority to NL7405294A priority patent/NL7405294A/xx
Priority to IT2161174A priority patent/IT1009920B/en
Publication of JPS49131388A publication Critical patent/JPS49131388A/ja
Priority to US05/622,527 priority patent/US4032958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
JP4388173A 1972-12-29 1973-04-18 Pending JPS49131388A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP4388173A JPS49131388A (en) 1973-04-18 1973-04-18
DE19742418560 DE2418560A1 (en) 1973-04-18 1974-04-17 SEMI-CONDUCTOR DEVICE
CA197,701A CA1015867A (en) 1973-04-18 1974-04-17 Semiconductor device
GB1680074A GB1472113A (en) 1973-04-18 1974-04-17 Semiconductor device circuits
FR7413549A FR2226750B1 (en) 1973-04-18 1974-04-18
AT323074A AT373443B (en) 1973-04-18 1974-04-18 CIRCUIT WITH A SEMICONDUCTOR COMPONENT
NL7405294A NL7405294A (en) 1973-04-18 1974-04-18
IT2161174A IT1009920B (en) 1973-04-18 1974-04-18 SEMICONDUCTOR DEVICE
US05/622,527 US4032958A (en) 1972-12-29 1975-10-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4388173A JPS49131388A (en) 1973-04-18 1973-04-18

Publications (1)

Publication Number Publication Date
JPS49131388A true JPS49131388A (en) 1974-12-17

Family

ID=12676034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4388173A Pending JPS49131388A (en) 1972-12-29 1973-04-18

Country Status (8)

Country Link
JP (1) JPS49131388A (en)
AT (1) AT373443B (en)
CA (1) CA1015867A (en)
DE (1) DE2418560A1 (en)
FR (1) FR2226750B1 (en)
GB (1) GB1472113A (en)
IT (1) IT1009920B (en)
NL (1) NL7405294A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5718710B2 (en) * 1974-05-10 1982-04-17
JPS5648983B2 (en) * 1974-05-10 1981-11-19
DE2706031A1 (en) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Thyristor containing integrated circuit - has annular zone surrounding thyristor forming zones of specified conductivity related to cathode
DE2705990A1 (en) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Thyristor containing integrated circuit - has opposite conductivity semiconductor zones deposited in thyristor anode zone, short circuited with anode
US4365208A (en) * 1980-04-23 1982-12-21 Rca Corporation Gain-controlled amplifier using a controllable alternating-current resistance

Also Published As

Publication number Publication date
CA1015867A (en) 1977-08-16
ATA323074A (en) 1983-05-15
AT373443B (en) 1984-01-25
NL7405294A (en) 1974-10-22
GB1472113A (en) 1977-05-04
DE2418560A1 (en) 1974-11-14
FR2226750A1 (en) 1974-11-15
IT1009920B (en) 1976-12-20
FR2226750B1 (en) 1978-03-24

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