JPS49126288A - - Google Patents
Info
- Publication number
- JPS49126288A JPS49126288A JP3848373A JP3848373A JPS49126288A JP S49126288 A JPS49126288 A JP S49126288A JP 3848373 A JP3848373 A JP 3848373A JP 3848373 A JP3848373 A JP 3848373A JP S49126288 A JPS49126288 A JP S49126288A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3848373A JPS5325634B2 (US07534539-20090519-C00280.png) | 1973-04-04 | 1973-04-04 | |
| IT50030/74A IT1004087B (it) | 1973-04-04 | 1974-04-03 | Metodo per produrre un dispositivo al fosfuro di gallio per emissione di luce verde |
| US05/457,649 US3935039A (en) | 1973-04-04 | 1974-04-03 | Method of manufacturing a green light-emitting gallium phosphide device |
| FR7412008A FR2224876B1 (US07534539-20090519-C00280.png) | 1973-04-04 | 1974-04-04 | |
| CA196,795A CA1022440A (en) | 1973-04-04 | 1974-04-04 | Method of manufacturing a green light-emitting gallium phosphide device |
| GB1494074A GB1427484A (en) | 1973-04-04 | 1974-04-04 | Method of manufacturing a green light-emitting gallium phosphide device |
| DE2416394A DE2416394C3 (de) | 1973-04-04 | 1974-04-04 | Verfahren zur Herstellung von Grünlicht emittierenden Galliumphosphid-Elektrolumineszenzdioden |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3848373A JPS5325634B2 (US07534539-20090519-C00280.png) | 1973-04-04 | 1973-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49126288A true JPS49126288A (US07534539-20090519-C00280.png) | 1974-12-03 |
| JPS5325634B2 JPS5325634B2 (US07534539-20090519-C00280.png) | 1978-07-27 |
Family
ID=12526490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3848373A Expired JPS5325634B2 (US07534539-20090519-C00280.png) | 1973-04-04 | 1973-04-04 |
Country Status (7)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4154630A (en) * | 1975-01-07 | 1979-05-15 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
| FR2297494A1 (fr) * | 1975-01-07 | 1976-08-06 | Radiotechnique Compelec | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
| JPS5596629A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method of epitaxially growing in liquid phase |
| US5707891A (en) * | 1989-04-28 | 1998-01-13 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode |
| US5652178A (en) * | 1989-04-28 | 1997-07-29 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode using LPE at different temperatures |
| CN113750951B (zh) * | 2021-09-14 | 2023-08-22 | 东莞理工学院 | 一种具备高效选择性的氮化磷制备方法及在除铀污染及海水提铀中的应用 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4984385A (US07534539-20090519-C00280.png) * | 1972-12-18 | 1974-08-13 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3617820A (en) * | 1966-11-18 | 1971-11-02 | Monsanto Co | Injection-luminescent diodes |
| US3462320A (en) * | 1966-11-21 | 1969-08-19 | Bell Telephone Labor Inc | Solution growth of nitrogen doped gallium phosphide |
| US3603833A (en) * | 1970-02-16 | 1971-09-07 | Bell Telephone Labor Inc | Electroluminescent junction semiconductor with controllable combination colors |
| US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
| GB1332994A (en) * | 1971-01-11 | 1973-10-10 | Mullard Ltd | Method of diffusing an impurity into a semiconductor body |
| US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
-
1973
- 1973-04-04 JP JP3848373A patent/JPS5325634B2/ja not_active Expired
-
1974
- 1974-04-03 US US05/457,649 patent/US3935039A/en not_active Expired - Lifetime
- 1974-04-03 IT IT50030/74A patent/IT1004087B/it active
- 1974-04-04 CA CA196,795A patent/CA1022440A/en not_active Expired
- 1974-04-04 DE DE2416394A patent/DE2416394C3/de not_active Expired
- 1974-04-04 FR FR7412008A patent/FR2224876B1/fr not_active Expired
- 1974-04-04 GB GB1494074A patent/GB1427484A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4984385A (US07534539-20090519-C00280.png) * | 1972-12-18 | 1974-08-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1004087B (it) | 1976-07-10 |
| DE2416394A1 (de) | 1974-10-17 |
| US3935039A (en) | 1976-01-27 |
| DE2416394C3 (de) | 1985-03-14 |
| GB1427484A (en) | 1976-03-10 |
| JPS5325634B2 (US07534539-20090519-C00280.png) | 1978-07-27 |
| DE2416394B2 (de) | 1980-01-10 |
| FR2224876B1 (US07534539-20090519-C00280.png) | 1978-01-13 |
| CA1022440A (en) | 1977-12-13 |
| FR2224876A1 (US07534539-20090519-C00280.png) | 1974-10-31 |
