JPS491174A - - Google Patents

Info

Publication number
JPS491174A
JPS491174A JP3818072A JP3818072A JPS491174A JP S491174 A JPS491174 A JP S491174A JP 3818072 A JP3818072 A JP 3818072A JP 3818072 A JP3818072 A JP 3818072A JP S491174 A JPS491174 A JP S491174A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3818072A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3818072A priority Critical patent/JPS491174A/ja
Publication of JPS491174A publication Critical patent/JPS491174A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3818072A 1972-04-14 1972-04-14 Pending JPS491174A (fi)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3818072A JPS491174A (fi) 1972-04-14 1972-04-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3818072A JPS491174A (fi) 1972-04-14 1972-04-14

Publications (1)

Publication Number Publication Date
JPS491174A true JPS491174A (fi) 1974-01-08

Family

ID=12518174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3818072A Pending JPS491174A (fi) 1972-04-14 1972-04-14

Country Status (1)

Country Link
JP (1) JPS491174A (fi)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166773A (fi) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS554947A (en) * 1978-06-28 1980-01-14 Fujitsu Ltd Method of growing liquid phase epitaxial
JPS62169486U (fi) * 1986-04-17 1987-10-27
JPS63209122A (ja) * 1987-02-21 1988-08-30 サムサン エレクトロニクス シーオー.,エルティーディー. 液相薄膜結晶成長方法及び装置
JPH0196091A (ja) * 1987-10-09 1989-04-14 Stanley Electric Co Ltd 半導体結晶の液相エピタキシャル成長装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166773A (fi) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS5720703B2 (fi) * 1974-12-05 1982-04-30
JPS554947A (en) * 1978-06-28 1980-01-14 Fujitsu Ltd Method of growing liquid phase epitaxial
JPS62169486U (fi) * 1986-04-17 1987-10-27
JPH044395Y2 (fi) * 1986-04-17 1992-02-07
JPS63209122A (ja) * 1987-02-21 1988-08-30 サムサン エレクトロニクス シーオー.,エルティーディー. 液相薄膜結晶成長方法及び装置
JPH0196091A (ja) * 1987-10-09 1989-04-14 Stanley Electric Co Ltd 半導体結晶の液相エピタキシャル成長装置
JPH0572359B2 (fi) * 1987-10-09 1993-10-12 Stanley Electric Co Ltd

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