JPS4895181A - - Google Patents
Info
- Publication number
- JPS4895181A JPS4895181A JP2568572A JP2568572A JPS4895181A JP S4895181 A JPS4895181 A JP S4895181A JP 2568572 A JP2568572 A JP 2568572A JP 2568572 A JP2568572 A JP 2568572A JP S4895181 A JPS4895181 A JP S4895181A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568572A JPS5143944B2 (es) | 1972-03-15 | 1972-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568572A JPS5143944B2 (es) | 1972-03-15 | 1972-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4895181A true JPS4895181A (es) | 1973-12-06 |
| JPS5143944B2 JPS5143944B2 (es) | 1976-11-25 |
Family
ID=12172630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2568572A Expired JPS5143944B2 (es) | 1972-03-15 | 1972-03-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5143944B2 (es) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001091196A1 (fr) * | 2000-05-23 | 2001-11-29 | Toyoda Gosei Co., Ltd. | Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production |
| US6617668B1 (en) | 1999-05-21 | 2003-09-09 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6645295B1 (en) | 1999-05-10 | 2003-11-11 | Toyoda Gosei Co., Ltd. | Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
| US6818926B2 (en) | 1999-07-27 | 2004-11-16 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| US6830948B2 (en) | 1999-12-24 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| US6844246B2 (en) | 2001-03-22 | 2005-01-18 | Toyoda Gosei Co., Ltd. | Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it |
| US6855620B2 (en) | 2000-04-28 | 2005-02-15 | Toyoda Gosei Co., Ltd. | Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices |
| US6860943B2 (en) | 2001-10-12 | 2005-03-01 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor |
| US6861305B2 (en) | 2000-03-31 | 2005-03-01 | Toyoda Gosei Co., Ltd. | Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US6967122B2 (en) | 2000-03-14 | 2005-11-22 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor and method for manufacturing the same |
| US6979584B2 (en) | 1999-12-24 | 2005-12-27 | Toyoda Gosei Co, Ltd. | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| US7052979B2 (en) | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
| JP2006253724A (ja) * | 2006-06-07 | 2006-09-21 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US7141444B2 (en) | 2000-03-14 | 2006-11-28 | Toyoda Gosei Co., Ltd. | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
-
1972
- 1972-03-15 JP JP2568572A patent/JPS5143944B2/ja not_active Expired
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6645295B1 (en) | 1999-05-10 | 2003-11-11 | Toyoda Gosei Co., Ltd. | Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
| US6617668B1 (en) | 1999-05-21 | 2003-09-09 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6881651B2 (en) | 1999-05-21 | 2005-04-19 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6835966B2 (en) | 1999-07-27 | 2004-12-28 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| US6893945B2 (en) | 1999-07-27 | 2005-05-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride group compound semiconductor |
| US6818926B2 (en) | 1999-07-27 | 2004-11-16 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| US6979584B2 (en) | 1999-12-24 | 2005-12-27 | Toyoda Gosei Co, Ltd. | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| US7560725B2 (en) | 1999-12-24 | 2009-07-14 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US6830948B2 (en) | 1999-12-24 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| US7141444B2 (en) | 2000-03-14 | 2006-11-28 | Toyoda Gosei Co., Ltd. | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
| US6967122B2 (en) | 2000-03-14 | 2005-11-22 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor and method for manufacturing the same |
| US7462867B2 (en) | 2000-03-14 | 2008-12-09 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor devices and method for fabricating the same |
| US6861305B2 (en) | 2000-03-31 | 2005-03-01 | Toyoda Gosei Co., Ltd. | Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US7491984B2 (en) | 2000-03-31 | 2009-02-17 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US6855620B2 (en) | 2000-04-28 | 2005-02-15 | Toyoda Gosei Co., Ltd. | Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices |
| US6861281B2 (en) | 2000-05-23 | 2005-03-01 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device and method for producing the same |
| JP2001332762A (ja) * | 2000-05-23 | 2001-11-30 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 |
| WO2001091196A1 (fr) * | 2000-05-23 | 2001-11-29 | Toyoda Gosei Co., Ltd. | Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production |
| US7052979B2 (en) | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
| US6844246B2 (en) | 2001-03-22 | 2005-01-18 | Toyoda Gosei Co., Ltd. | Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it |
| US6860943B2 (en) | 2001-10-12 | 2005-03-01 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor |
| JP2006253724A (ja) * | 2006-06-07 | 2006-09-21 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5143944B2 (es) | 1976-11-25 |