JPS4894377A - - Google Patents
Info
- Publication number
- JPS4894377A JPS4894377A JP47026256A JP2625672A JPS4894377A JP S4894377 A JPS4894377 A JP S4894377A JP 47026256 A JP47026256 A JP 47026256A JP 2625672 A JP2625672 A JP 2625672A JP S4894377 A JPS4894377 A JP S4894377A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Electronic Switches (AREA)
Priority Applications (20)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47026256A JPS5232557B2 (sv) | 1972-03-14 | 1972-03-14 | |
GB1074073A GB1357515A (en) | 1972-03-10 | 1973-03-06 | Method for manufacturing an mos integrated circuit |
FR7308327A FR2175819B1 (sv) | 1972-03-10 | 1973-03-08 | |
DE2311913A DE2311913A1 (de) | 1972-03-10 | 1973-03-09 | Verfahren zur herstellung von matrixkreisen mit parallelgattern |
DE19732311915 DE2311915B2 (de) | 1972-03-10 | 1973-03-09 | Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen |
US340255A US3865651A (en) | 1972-03-10 | 1973-03-12 | Method of manufacturing series gate type matrix circuits |
US340254A US3865650A (en) | 1972-03-10 | 1973-03-12 | Method for manufacturing a MOS integrated circuit |
GB1190173A GB1375355A (sv) | 1972-03-10 | 1973-03-13 | |
DE19732312413 DE2312413B2 (de) | 1972-03-10 | 1973-03-13 | Verfahren zur herstellung eines matrixschaltkreises |
GB1190273A GB1430301A (en) | 1972-03-10 | 1973-03-13 | Method of manufacturing mos matrix circuits |
FR7308863A FR2175961B1 (sv) | 1972-03-10 | 1973-03-13 | |
IT48765/73A IT979822B (it) | 1972-03-14 | 1973-03-13 | Procedimento per la produzione di circuiti di matrice del tipo a controllo in serie |
CA165,982A CA1009379A (en) | 1972-03-10 | 1973-03-13 | Method of manufacturing parallel gate type matrix circuits |
DE2312414A DE2312414C2 (de) | 1972-03-10 | 1973-03-13 | Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen |
FR7308860A FR2175960B1 (sv) | 1972-03-10 | 1973-03-13 | |
GB1234073A GB1357516A (en) | 1972-03-10 | 1973-03-14 | Method of manufacturing an mos integrated circuit |
US341493A US3874955A (en) | 1972-03-10 | 1973-03-15 | Method of manufacturing an mos integrated circuit |
FR7309581A FR2176825B1 (sv) | 1972-03-10 | 1973-03-16 | |
CA166,294A CA978661A (en) | 1972-03-10 | 1973-03-16 | Method of manufacturing an mos integrated circuit |
US05/560,735 US3985591A (en) | 1972-03-10 | 1975-03-21 | Method of manufacturing parallel gate matrix circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47026256A JPS5232557B2 (sv) | 1972-03-14 | 1972-03-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4894377A true JPS4894377A (sv) | 1973-12-05 |
JPS5232557B2 JPS5232557B2 (sv) | 1977-08-22 |
Family
ID=12188165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47026256A Expired JPS5232557B2 (sv) | 1972-03-10 | 1972-03-14 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5232557B2 (sv) |
IT (1) | IT979822B (sv) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5047576A (sv) * | 1973-08-31 | 1975-04-28 | ||
JPS5131180A (sv) * | 1974-09-11 | 1976-03-17 | Hitachi Ltd | |
JPS5230388A (en) * | 1975-09-04 | 1977-03-08 | Hitachi Ltd | Semiconductor integrated circuit device constructed with insulating ga te field effect transistor |
JPS5287332A (en) * | 1975-12-29 | 1977-07-21 | Texas Instruments Inc | Semiconductor memory* method of programming semiconductor memory and method of manufacturing same |
JPS5373962A (en) * | 1976-12-14 | 1978-06-30 | Toshiba Corp | Logic circuit |
JPS5980962A (ja) * | 1983-08-24 | 1984-05-10 | Hitachi Ltd | Mis形半導体装置の製法 |
-
1972
- 1972-03-14 JP JP47026256A patent/JPS5232557B2/ja not_active Expired
-
1973
- 1973-03-13 IT IT48765/73A patent/IT979822B/it active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5047576A (sv) * | 1973-08-31 | 1975-04-28 | ||
JPS5525502B2 (sv) * | 1973-08-31 | 1980-07-07 | ||
JPS5131180A (sv) * | 1974-09-11 | 1976-03-17 | Hitachi Ltd | |
JPS5947464B2 (ja) * | 1974-09-11 | 1984-11-19 | 株式会社日立製作所 | 半導体装置 |
JPS5230388A (en) * | 1975-09-04 | 1977-03-08 | Hitachi Ltd | Semiconductor integrated circuit device constructed with insulating ga te field effect transistor |
JPS5851427B2 (ja) * | 1975-09-04 | 1983-11-16 | 株式会社日立製作所 | 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法 |
JPS5287332A (en) * | 1975-12-29 | 1977-07-21 | Texas Instruments Inc | Semiconductor memory* method of programming semiconductor memory and method of manufacturing same |
JPS5373962A (en) * | 1976-12-14 | 1978-06-30 | Toshiba Corp | Logic circuit |
JPS563688B2 (sv) * | 1976-12-14 | 1981-01-27 | ||
JPS5980962A (ja) * | 1983-08-24 | 1984-05-10 | Hitachi Ltd | Mis形半導体装置の製法 |
JPS6028144B2 (ja) * | 1983-08-24 | 1985-07-03 | 株式会社日立製作所 | Mis形半導体装置の製法 |
Also Published As
Publication number | Publication date |
---|---|
IT979822B (it) | 1974-09-30 |
JPS5232557B2 (sv) | 1977-08-22 |