JPS4894368A - - Google Patents
Info
- Publication number
- JPS4894368A JPS4894368A JP2545372A JP2545372A JPS4894368A JP S4894368 A JPS4894368 A JP S4894368A JP 2545372 A JP2545372 A JP 2545372A JP 2545372 A JP2545372 A JP 2545372A JP S4894368 A JPS4894368 A JP S4894368A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2545372A JPS4894368A (fr) | 1972-03-13 | 1972-03-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2545372A JPS4894368A (fr) | 1972-03-13 | 1972-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4894368A true JPS4894368A (fr) | 1973-12-05 |
Family
ID=12166431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2545372A Pending JPS4894368A (fr) | 1972-03-13 | 1972-03-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4894368A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103764A (en) * | 1975-03-08 | 1976-09-13 | New Nippon Electric Co | Handotaisochino seizohoho |
| JPS55121645A (en) * | 1979-03-12 | 1980-09-18 | Matsushita Electric Ind Co Ltd | Method of fabricating thin film semiconductor device |
| JPS58135628A (ja) * | 1982-02-08 | 1983-08-12 | Asahi Chem Ind Co Ltd | 化合物半導体薄膜構造体の製造方法 |
| WO1989000769A1 (fr) * | 1987-07-09 | 1989-01-26 | Mitsubishi Monsanto Chemical Company | Substrat de diode electroluminescente de grande luminosite et procede de culture epitaxiale de ce substrat |
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1972
- 1972-03-13 JP JP2545372A patent/JPS4894368A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103764A (en) * | 1975-03-08 | 1976-09-13 | New Nippon Electric Co | Handotaisochino seizohoho |
| JPS55121645A (en) * | 1979-03-12 | 1980-09-18 | Matsushita Electric Ind Co Ltd | Method of fabricating thin film semiconductor device |
| JPS58135628A (ja) * | 1982-02-08 | 1983-08-12 | Asahi Chem Ind Co Ltd | 化合物半導体薄膜構造体の製造方法 |
| JPH0419699B2 (fr) * | 1982-02-08 | 1992-03-31 | Asahi Chemical Ind | |
| WO1989000769A1 (fr) * | 1987-07-09 | 1989-01-26 | Mitsubishi Monsanto Chemical Company | Substrat de diode electroluminescente de grande luminosite et procede de culture epitaxiale de ce substrat |
| US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |