JPS4880276A - - Google Patents
Info
- Publication number
- JPS4880276A JPS4880276A JP1064572A JP1064572A JPS4880276A JP S4880276 A JPS4880276 A JP S4880276A JP 1064572 A JP1064572 A JP 1064572A JP 1064572 A JP1064572 A JP 1064572A JP S4880276 A JPS4880276 A JP S4880276A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1064572A JPS4880276A (de) | 1972-01-28 | 1972-01-28 | |
| US05/322,522 US3933538A (en) | 1972-01-18 | 1973-01-10 | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1064572A JPS4880276A (de) | 1972-01-28 | 1972-01-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4880276A true JPS4880276A (de) | 1973-10-27 |
Family
ID=11755939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1064572A Pending JPS4880276A (de) | 1972-01-18 | 1972-01-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4880276A (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS515956A (de) * | 1974-07-04 | 1976-01-19 | Nippon Telegraph & Telephone | |
| JPS5166773A (de) * | 1974-12-05 | 1976-06-09 | Fujitsu Ltd | |
| JPS51114067A (en) * | 1975-04-01 | 1976-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth towards the top of alxga1-xas base |
| JPS51114384A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial crystal growth |
| JPS56129319A (en) * | 1980-03-14 | 1981-10-09 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1972
- 1972-01-28 JP JP1064572A patent/JPS4880276A/ja active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS515956A (de) * | 1974-07-04 | 1976-01-19 | Nippon Telegraph & Telephone | |
| JPS5638054B2 (de) * | 1974-07-04 | 1981-09-03 | ||
| JPS5166773A (de) * | 1974-12-05 | 1976-06-09 | Fujitsu Ltd | |
| JPS5720703B2 (de) * | 1974-12-05 | 1982-04-30 | ||
| JPS51114067A (en) * | 1975-04-01 | 1976-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth towards the top of alxga1-xas base |
| JPS51114384A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial crystal growth |
| JPS5441389B2 (de) * | 1975-04-01 | 1979-12-07 | ||
| JPS5516530B2 (de) * | 1975-04-01 | 1980-05-02 | ||
| JPS56129319A (en) * | 1980-03-14 | 1981-10-09 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |