JPS4878871A - - Google Patents

Info

Publication number
JPS4878871A
JPS4878871A JP47007612A JP761272A JPS4878871A JP S4878871 A JPS4878871 A JP S4878871A JP 47007612 A JP47007612 A JP 47007612A JP 761272 A JP761272 A JP 761272A JP S4878871 A JPS4878871 A JP S4878871A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47007612A
Other languages
Japanese (ja)
Other versions
JPS5141546B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47007612A priority Critical patent/JPS5141546B2/ja
Priority to US325740A priority patent/US3906889A/en
Publication of JPS4878871A publication Critical patent/JPS4878871A/ja
Publication of JPS5141546B2 publication Critical patent/JPS5141546B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP47007612A 1972-01-21 1972-01-21 Expired JPS5141546B2 (cg-RX-API-DMAC10.html)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47007612A JPS5141546B2 (cg-RX-API-DMAC10.html) 1972-01-21 1972-01-21
US325740A US3906889A (en) 1972-01-21 1973-01-22 Crystal growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47007612A JPS5141546B2 (cg-RX-API-DMAC10.html) 1972-01-21 1972-01-21

Publications (2)

Publication Number Publication Date
JPS4878871A true JPS4878871A (cg-RX-API-DMAC10.html) 1973-10-23
JPS5141546B2 JPS5141546B2 (cg-RX-API-DMAC10.html) 1976-11-10

Family

ID=11670619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47007612A Expired JPS5141546B2 (cg-RX-API-DMAC10.html) 1972-01-21 1972-01-21

Country Status (2)

Country Link
US (1) US3906889A (cg-RX-API-DMAC10.html)
JP (1) JPS5141546B2 (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225422A (ja) * 1984-04-24 1985-11-09 Hitachi Ltd 薄膜形成方法およびその装置
US4855013A (en) * 1984-08-13 1989-08-08 Agency Of Industrial Science And Technology Method for controlling the thickness of a thin crystal film
FR2703077B1 (fr) * 1993-03-24 1995-04-28 Harmand Jean Christophe Dispositif de régulation de flux issus de cellules d'évaporation de matériaux solides, utilisant des vannes asservies à des mesures de pressions partielles.
US6753042B1 (en) * 2000-05-02 2004-06-22 Itac Limited Diamond-like carbon thin film coating process
US8127904B2 (en) * 2008-04-04 2012-03-06 Muska Martin A System and method for tuning the resonance frequency of an energy absorbing device for a structure in response to a disruptive force

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3602709A (en) * 1968-03-14 1971-08-31 Bell & Howell Co Mass analyzer including magnetic field control means
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams

Also Published As

Publication number Publication date
US3906889A (en) 1975-09-23
JPS5141546B2 (cg-RX-API-DMAC10.html) 1976-11-10

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