JPS4871889A - - Google Patents
Info
- Publication number
- JPS4871889A JPS4871889A JP207972A JP207972A JPS4871889A JP S4871889 A JPS4871889 A JP S4871889A JP 207972 A JP207972 A JP 207972A JP 207972 A JP207972 A JP 207972A JP S4871889 A JPS4871889 A JP S4871889A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP207972A JPS5139835B2 (https=) | 1971-12-27 | 1971-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP207972A JPS5139835B2 (https=) | 1971-12-27 | 1971-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4871889A true JPS4871889A (https=) | 1973-09-28 |
| JPS5139835B2 JPS5139835B2 (https=) | 1976-10-29 |
Family
ID=11519325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP207972A Expired JPS5139835B2 (https=) | 1971-12-27 | 1971-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5139835B2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0918003A (ja) * | 1977-01-26 | 1997-01-17 | Sgs Thomson Microelectron Inc | 電界効果トランジスタの製造方法 |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4935337A (en) | 1987-10-20 | 1990-06-19 | Fuji Photo Film Co., Ltd. | Silver halide photographic material |
-
1971
- 1971-12-27 JP JP207972A patent/JPS5139835B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0918003A (ja) * | 1977-01-26 | 1997-01-17 | Sgs Thomson Microelectron Inc | 電界効果トランジスタの製造方法 |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
| US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5139835B2 (https=) | 1976-10-29 |