JPS4849385A - - Google Patents

Info

Publication number
JPS4849385A
JPS4849385A JP47039237A JP3923772A JPS4849385A JP S4849385 A JPS4849385 A JP S4849385A JP 47039237 A JP47039237 A JP 47039237A JP 3923772 A JP3923772 A JP 3923772A JP S4849385 A JPS4849385 A JP S4849385A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47039237A
Other languages
Japanese (ja)
Other versions
JPS515278B2 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4849385A publication Critical patent/JPS4849385A/ja
Publication of JPS515278B2 publication Critical patent/JPS515278B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H10W20/493—
    • H10P14/6314—
    • H10P14/6334—
    • H10P14/6939—
    • H10P14/69391—
    • H10P14/69392—
    • H10P14/69393—
    • H10P14/69394—
    • H10P14/69395—

Landscapes

  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP47039237A 1971-04-23 1972-04-20 Expired JPS515278B2 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7114550A FR2134172B1 (cg-RX-API-DMAC10.html) 1971-04-23 1971-04-23

Publications (2)

Publication Number Publication Date
JPS4849385A true JPS4849385A (cg-RX-API-DMAC10.html) 1973-07-12
JPS515278B2 JPS515278B2 (cg-RX-API-DMAC10.html) 1976-02-18

Family

ID=9075831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47039237A Expired JPS515278B2 (cg-RX-API-DMAC10.html) 1971-04-23 1972-04-20

Country Status (9)

Country Link
US (1) US3787822A (cg-RX-API-DMAC10.html)
JP (1) JPS515278B2 (cg-RX-API-DMAC10.html)
AU (1) AU4142672A (cg-RX-API-DMAC10.html)
CA (1) CA970074A (cg-RX-API-DMAC10.html)
DE (1) DE2217538C3 (cg-RX-API-DMAC10.html)
FR (1) FR2134172B1 (cg-RX-API-DMAC10.html)
GB (1) GB1384785A (cg-RX-API-DMAC10.html)
IT (1) IT954729B (cg-RX-API-DMAC10.html)
NL (1) NL7205115A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123088A (en) * 1975-04-18 1976-10-27 Sanyo Electric Co Ltd Semiconducter ic device and its mask making method

Families Citing this family (44)

* Cited by examiner, † Cited by third party
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US3967251A (en) * 1975-04-17 1976-06-29 Xerox Corporation User variable computer memory module
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
EP0068058B1 (fr) * 1981-06-25 1986-09-03 International Business Machines Corporation Mémoire morte électriquement programmable
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
FR2535887A1 (fr) * 1982-11-04 1984-05-11 Thomson Csf Procede de fabrication d'une structure logique integree programmee selon une configuration preetablie fixe
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4943538A (en) * 1986-05-09 1990-07-24 Actel Corporation Programmable low impedance anti-fuse element
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
GB2222024B (en) * 1988-08-18 1992-02-19 Stc Plc Improvements in integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5633189A (en) * 1994-08-01 1997-05-27 Actel Corporation Method of making metal to metal antifuse
US7153756B1 (en) * 1998-08-04 2006-12-26 Texas Instruments Incorporated Bonded SOI with buried interconnect to handle or device wafer
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6631085B2 (en) 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
CN100358147C (zh) 2000-08-14 2007-12-26 矩阵半导体公司 密集阵列和电荷存储器件及其制造方法
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6624011B1 (en) 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
US20090272958A1 (en) * 2008-05-02 2009-11-05 Klaus-Dieter Ufert Resistive Memory
US8049299B2 (en) * 2009-02-25 2011-11-01 Freescale Semiconductor, Inc. Antifuses with curved breakdown regions
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940114A (cg-RX-API-DMAC10.html) * 1972-08-16 1974-04-15

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
GB994814A (en) * 1961-09-29 1965-06-10 Ibm Protective cover for electrical conductor bodies
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
US3481777A (en) * 1967-02-17 1969-12-02 Ibm Electroless coating method for making printed circuits
US3447961A (en) * 1967-03-20 1969-06-03 Us Navy Movable substrate method of vaporizing and depositing electrode material layers on the substrate
US3510728A (en) * 1967-09-08 1970-05-05 Motorola Inc Isolation of multiple layer metal circuits with low temperature phosphorus silicates
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
US3634929A (en) * 1968-11-02 1972-01-18 Tokyo Shibaura Electric Co Method of manufacturing semiconductor integrated circuits
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
US3702786A (en) * 1970-10-28 1972-11-14 Rca Corp Mos transistor with aluminum oxide gate dielectric

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940114A (cg-RX-API-DMAC10.html) * 1972-08-16 1974-04-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123088A (en) * 1975-04-18 1976-10-27 Sanyo Electric Co Ltd Semiconducter ic device and its mask making method

Also Published As

Publication number Publication date
GB1384785A (en) 1975-02-19
FR2134172B1 (cg-RX-API-DMAC10.html) 1977-03-18
DE2217538B2 (de) 1981-04-09
IT954729B (it) 1973-09-15
AU4142672A (en) 1973-10-25
US3787822A (en) 1974-01-22
CA970074A (en) 1975-06-24
DE2217538A1 (de) 1972-10-26
FR2134172A1 (cg-RX-API-DMAC10.html) 1972-12-08
DE2217538C3 (de) 1981-12-03
JPS515278B2 (cg-RX-API-DMAC10.html) 1976-02-18
NL7205115A (cg-RX-API-DMAC10.html) 1972-10-25

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