JPS4844395B1 - - Google Patents
Info
- Publication number
- JPS4844395B1 JPS4844395B1 JP43055672A JP5567268A JPS4844395B1 JP S4844395 B1 JPS4844395 B1 JP S4844395B1 JP 43055672 A JP43055672 A JP 43055672A JP 5567268 A JP5567268 A JP 5567268A JP S4844395 B1 JPS4844395 B1 JP S4844395B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10P14/3441—
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- H10P14/2911—
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- H10P14/3421—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/916—Autodoping control or utilization
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43055672A JPS4844395B1 (cg-RX-API-DMAC10.html) | 1968-08-02 | 1968-08-02 | |
| US846062A US3663320A (en) | 1968-08-02 | 1969-07-30 | Vapor growth process for gallium arsenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43055672A JPS4844395B1 (cg-RX-API-DMAC10.html) | 1968-08-02 | 1968-08-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4844395B1 true JPS4844395B1 (cg-RX-API-DMAC10.html) | 1973-12-24 |
Family
ID=13005346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP43055672A Pending JPS4844395B1 (cg-RX-API-DMAC10.html) | 1968-08-02 | 1968-08-02 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3663320A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS4844395B1 (cg-RX-API-DMAC10.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3964089A (en) * | 1972-09-21 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone |
| US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
| US3793093A (en) * | 1973-01-12 | 1974-02-19 | Handotai Kenkyu Shinkokai | Method for producing a semiconductor device having a very small deviation in lattice constant |
| EP0052979B1 (en) | 1980-11-18 | 1985-09-18 | BRITISH TELECOMMUNICATIONS public limited company | Improvements in the manufacture of group iiib-vb compounds |
| US4574093A (en) * | 1983-12-30 | 1986-03-04 | At&T Bell Laboratories | Deposition technique |
| US4792467A (en) * | 1987-08-17 | 1988-12-20 | Morton Thiokol, Inc. | Method for vapor phase deposition of gallium nitride film |
| US5389396A (en) * | 1993-08-11 | 1995-02-14 | Northwestern University | InGaAsP/GaAs diode laser |
| US5384151A (en) * | 1993-08-11 | 1995-01-24 | Northwestern University | InGaAsP/GaAs diode laser |
| US5410178A (en) * | 1994-08-22 | 1995-04-25 | Northwestern University | Semiconductor films |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3211589A (en) * | 1960-07-14 | 1965-10-12 | Hughes Aircraft Co | P-n junction formation in iii-v semiconductor compounds |
| US3371051A (en) * | 1965-06-22 | 1968-02-27 | Rowland E. Johnson | Intrinsic-appearing gallium arsenide compound semiconductor material |
| US3392193A (en) * | 1964-11-18 | 1968-07-09 | Texas Instruments Inc | Gallium arsenide semiconductor doped with chromium and a shallow acceptor impurity |
| US3533967A (en) * | 1966-11-10 | 1970-10-13 | Monsanto Co | Double-doped gallium arsenide and method of preparation |
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1968
- 1968-08-02 JP JP43055672A patent/JPS4844395B1/ja active Pending
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1969
- 1969-07-30 US US846062A patent/US3663320A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3663320A (en) | 1972-05-16 |