JPS4844385B1 - - Google Patents

Info

Publication number
JPS4844385B1
JPS4844385B1 JP1202069A JP1202069A JPS4844385B1 JP S4844385 B1 JPS4844385 B1 JP S4844385B1 JP 1202069 A JP1202069 A JP 1202069A JP 1202069 A JP1202069 A JP 1202069A JP S4844385 B1 JPS4844385 B1 JP S4844385B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1202069A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1202069A priority Critical patent/JPS4844385B1/ja
Priority to US11426A priority patent/US3663871A/en
Priority to GB759270A priority patent/GB1302764A/en
Priority to DE19702007426 priority patent/DE2007426A1/de
Publication of JPS4844385B1 publication Critical patent/JPS4844385B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP1202069A 1969-02-18 1969-02-18 Pending JPS4844385B1 (ref)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1202069A JPS4844385B1 (ref) 1969-02-18 1969-02-18
US11426A US3663871A (en) 1969-02-18 1970-02-16 Mis-type semiconductor read only memory device and method of manufacturing the same
GB759270A GB1302764A (ref) 1969-02-18 1970-02-17
DE19702007426 DE2007426A1 (de) 1969-02-18 1970-02-18 Halbleiterspeichervorrichtung und Ver fahren zu deren Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1202069A JPS4844385B1 (ref) 1969-02-18 1969-02-18

Publications (1)

Publication Number Publication Date
JPS4844385B1 true JPS4844385B1 (ref) 1973-12-24

Family

ID=11793900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1202069A Pending JPS4844385B1 (ref) 1969-02-18 1969-02-18

Country Status (4)

Country Link
US (1) US3663871A (ref)
JP (1) JPS4844385B1 (ref)
DE (1) DE2007426A1 (ref)
GB (1) GB1302764A (ref)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875567A (en) * 1971-12-29 1975-04-01 Sony Corp Memory circuit using variable threshold level field-effect device
DE19622013A1 (de) * 1996-05-31 1997-12-11 Siemens Ag Mit akustischen Oberflächenwellen arbeitendes akustoelektronisches Bauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528064A (en) * 1966-09-01 1970-09-08 Univ California Semiconductor memory element and method
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
US3556966A (en) * 1968-01-19 1971-01-19 Rca Corp Plasma anodizing aluminium coatings on a semiconductor
US3530443A (en) * 1968-11-27 1970-09-22 Fairchild Camera Instr Co Mos gated resistor memory cell
US3549991A (en) * 1969-02-24 1970-12-22 Ford Motor Co Superconducting flux sensitive device with small area contacts

Also Published As

Publication number Publication date
DE2007426A1 (de) 1971-02-11
US3663871A (en) 1972-05-16
GB1302764A (ref) 1973-01-10

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