US10043655B2
(en)
|
2010-04-15 |
2018-08-07 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
US9570274B2
(en)
|
2010-04-15 |
2017-02-14 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
US10043657B2
(en)
|
2010-04-15 |
2018-08-07 |
Lam Research Corporation |
Plasma assisted atomic layer deposition metal oxide for patterning applications
|
US9570290B2
(en)
|
2010-04-15 |
2017-02-14 |
Lam Research Corporation |
Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
|
US11133180B2
(en)
|
2010-04-15 |
2021-09-28 |
Lam Research Corporation |
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
|
US10559468B2
(en)
|
2010-04-15 |
2020-02-11 |
Lam Research Corporation |
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
|
US9793110B2
(en)
|
2010-04-15 |
2017-10-17 |
Lam Research Corporation |
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
|
US10361076B2
(en)
|
2010-04-15 |
2019-07-23 |
Lam Research Corporation |
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
|
US9892917B2
(en)
|
2010-04-15 |
2018-02-13 |
Lam Research Corporation |
Plasma assisted atomic layer deposition of multi-layer films for patterning applications
|
US9997357B2
(en)
|
2010-04-15 |
2018-06-12 |
Lam Research Corporation |
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
|
US9673041B2
(en)
|
2010-04-15 |
2017-06-06 |
Lam Research Corporation |
Plasma assisted atomic layer deposition titanium oxide for patterning applications
|
US11011379B2
(en)
|
2010-04-15 |
2021-05-18 |
Lam Research Corporation |
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
|
US9685320B2
(en)
|
2010-09-23 |
2017-06-20 |
Lam Research Corporation |
Methods for depositing silicon oxide
|
US10741458B2
(en)
|
2012-11-08 |
2020-08-11 |
Novellus Systems, Inc. |
Methods for depositing films on sensitive substrates
|
US10008428B2
(en)
|
2012-11-08 |
2018-06-26 |
Novellus Systems, Inc. |
Methods for depositing films on sensitive substrates
|
US9786570B2
(en)
|
2012-11-08 |
2017-10-10 |
Novellus Systems, Inc. |
Methods for depositing films on sensitive substrates
|
US9875891B2
(en)
|
2014-11-24 |
2018-01-23 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
US10804099B2
(en)
|
2014-11-24 |
2020-10-13 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
US11646198B2
(en)
|
2015-03-20 |
2023-05-09 |
Lam Research Corporation |
Ultrathin atomic layer deposition film accuracy thickness control
|
US10373806B2
(en)
|
2016-06-30 |
2019-08-06 |
Lam Research Corporation |
Apparatus and method for deposition and etch in gap fill
|
US10957514B2
(en)
|
2016-06-30 |
2021-03-23 |
Lam Research Corporation |
Apparatus and method for deposition and etch in gap fill
|
US9773643B1
(en)
|
2016-06-30 |
2017-09-26 |
Lam Research Corporation |
Apparatus and method for deposition and etch in gap fill
|
US10679848B2
(en)
|
2016-07-01 |
2020-06-09 |
Lam Research Corporation |
Selective atomic layer deposition with post-dose treatment
|
US10062563B2
(en)
|
2016-07-01 |
2018-08-28 |
Lam Research Corporation |
Selective atomic layer deposition with post-dose treatment
|
US10037884B2
(en)
|
2016-08-31 |
2018-07-31 |
Lam Research Corporation |
Selective atomic layer deposition for gapfill using sacrificial underlayer
|
US10269559B2
(en)
|
2017-09-13 |
2019-04-23 |
Lam Research Corporation |
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
|