JPS4843472A - - Google Patents

Info

Publication number
JPS4843472A
JPS4843472A JP7769071A JP7769071A JPS4843472A JP S4843472 A JPS4843472 A JP S4843472A JP 7769071 A JP7769071 A JP 7769071A JP 7769071 A JP7769071 A JP 7769071A JP S4843472 A JPS4843472 A JP S4843472A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7769071A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7769071A priority Critical patent/JPS4843472A/ja
Publication of JPS4843472A publication Critical patent/JPS4843472A/ja
Pending legal-status Critical Current

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JP7769071A 1971-10-04 1971-10-04 Pending JPS4843472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7769071A JPS4843472A (en) 1971-10-04 1971-10-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7769071A JPS4843472A (en) 1971-10-04 1971-10-04

Publications (1)

Publication Number Publication Date
JPS4843472A true JPS4843472A (en) 1973-06-23

Family

ID=13640873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7769071A Pending JPS4843472A (en) 1971-10-04 1971-10-04

Country Status (1)

Country Link
JP (1) JPS4843472A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570290B2 (en) 2010-04-15 2017-02-14 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9570274B2 (en) 2010-04-15 2017-02-14 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US9786570B2 (en) 2012-11-08 2017-10-10 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9793110B2 (en) 2010-04-15 2017-10-17 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9875891B2 (en) 2014-11-24 2018-01-23 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11646198B2 (en) 2015-03-20 2023-05-09 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043655B2 (en) 2010-04-15 2018-08-07 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9570274B2 (en) 2010-04-15 2017-02-14 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US10043657B2 (en) 2010-04-15 2018-08-07 Lam Research Corporation Plasma assisted atomic layer deposition metal oxide for patterning applications
US9570290B2 (en) 2010-04-15 2017-02-14 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US11133180B2 (en) 2010-04-15 2021-09-28 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US10559468B2 (en) 2010-04-15 2020-02-11 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9793110B2 (en) 2010-04-15 2017-10-17 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US10361076B2 (en) 2010-04-15 2019-07-23 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9673041B2 (en) 2010-04-15 2017-06-06 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for patterning applications
US11011379B2 (en) 2010-04-15 2021-05-18 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US10741458B2 (en) 2012-11-08 2020-08-11 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US10008428B2 (en) 2012-11-08 2018-06-26 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9786570B2 (en) 2012-11-08 2017-10-10 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9875891B2 (en) 2014-11-24 2018-01-23 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10804099B2 (en) 2014-11-24 2020-10-13 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US11646198B2 (en) 2015-03-20 2023-05-09 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US10373806B2 (en) 2016-06-30 2019-08-06 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10957514B2 (en) 2016-06-30 2021-03-23 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10679848B2 (en) 2016-07-01 2020-06-09 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer

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