JPS4841072B1 - - Google Patents
Info
- Publication number
- JPS4841072B1 JPS4841072B1 JP41038789A JP3878966A JPS4841072B1 JP S4841072 B1 JPS4841072 B1 JP S4841072B1 JP 41038789 A JP41038789 A JP 41038789A JP 3878966 A JP3878966 A JP 3878966A JP S4841072 B1 JPS4841072 B1 JP S4841072B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01051—Antimony [Sb]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01076—Osmium [Os]
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- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES97625A DE1274245B (de) | 1965-06-15 | 1965-06-15 | Halbleiter-Gleichrichterdiode fuer Starkstrom |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4841072B1 true JPS4841072B1 (US06521211-20030218-C00004.png) | 1973-12-04 |
Family
ID=7520867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP41038789A Pending JPS4841072B1 (US06521211-20030218-C00004.png) | 1965-06-15 | 1966-06-15 |
Country Status (11)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111739808A (zh) * | 2020-07-07 | 2020-10-02 | 黄山市恒悦电子有限公司 | 一种环保螺栓型电力电子整流芯片成型工艺 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7317598U (de) * | 1972-06-09 | 1974-04-04 | Bbc Ag | Halbleiterbauelement |
US3945028A (en) * | 1973-04-26 | 1976-03-16 | Westinghouse Electric Corporation | High speed, high power plasma thyristor circuit |
DE2608432C3 (de) * | 1976-03-01 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Leistungsdiode |
DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL272752A (US06521211-20030218-C00004.png) * | 1960-12-20 | |||
DE1182353C2 (de) * | 1961-03-29 | 1973-01-11 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper |
NL298354A (US06521211-20030218-C00004.png) * | 1963-03-29 |
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1965
- 1965-06-15 DE DES97625A patent/DE1274245B/de active Pending
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1966
- 1966-03-18 AT AT259366A patent/AT254986B/de active
- 1966-03-31 CH CH466366A patent/CH442532A/de unknown
- 1966-05-06 GB GB20294/66A patent/GB1079309A/en not_active Expired
- 1966-05-07 DK DK234466AA patent/DK121386B/da unknown
- 1966-06-10 BE BE682361A patent/BE682361A/xx unknown
- 1966-06-13 NO NO163423A patent/NO115782B/no unknown
- 1966-06-14 SE SE08097/66A patent/SE333609B/xx unknown
- 1966-06-14 US US557515A patent/US3439239A/en not_active Expired - Lifetime
- 1966-06-15 NL NL6608289A patent/NL6608289A/xx unknown
- 1966-06-15 JP JP41038789A patent/JPS4841072B1/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111739808A (zh) * | 2020-07-07 | 2020-10-02 | 黄山市恒悦电子有限公司 | 一种环保螺栓型电力电子整流芯片成型工艺 |
CN111739808B (zh) * | 2020-07-07 | 2024-03-29 | 黄山市恒悦电子有限公司 | 一种环保螺栓型电力电子整流芯片成型工艺 |
Also Published As
Publication number | Publication date |
---|---|
NO115782B (US06521211-20030218-C00004.png) | 1968-12-02 |
SE333609B (US06521211-20030218-C00004.png) | 1971-03-22 |
DK121386B (da) | 1971-10-11 |
BE682361A (US06521211-20030218-C00004.png) | 1966-12-12 |
US3439239A (en) | 1969-04-15 |
NL6608289A (US06521211-20030218-C00004.png) | 1966-12-16 |
CH442532A (de) | 1967-08-31 |
GB1079309A (en) | 1967-08-16 |
DE1274245B (de) | 1968-08-01 |
AT254986B (de) | 1967-06-12 |