JPS4840659A - - Google Patents
Info
- Publication number
- JPS4840659A JPS4840659A JP46075762A JP7576271A JPS4840659A JP S4840659 A JPS4840659 A JP S4840659A JP 46075762 A JP46075762 A JP 46075762A JP 7576271 A JP7576271 A JP 7576271A JP S4840659 A JPS4840659 A JP S4840659A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Press Drives And Press Lines (AREA)
- Resistance Welding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7576271A JPS5438056B2 (enExample) | 1971-09-28 | 1971-09-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7576271A JPS5438056B2 (enExample) | 1971-09-28 | 1971-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4840659A true JPS4840659A (enExample) | 1973-06-14 |
| JPS5438056B2 JPS5438056B2 (enExample) | 1979-11-19 |
Family
ID=13585547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7576271A Expired JPS5438056B2 (enExample) | 1971-09-28 | 1971-09-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5438056B2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124376A (en) * | 1975-04-15 | 1976-10-29 | Siemens Ag | Method of making silicon single crystal doped with activation of neutron |
| JPS56146229A (en) * | 1980-04-16 | 1981-11-13 | Fujitsu Ltd | Manufacture of germanium semiconductor device |
-
1971
- 1971-09-28 JP JP7576271A patent/JPS5438056B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51124376A (en) * | 1975-04-15 | 1976-10-29 | Siemens Ag | Method of making silicon single crystal doped with activation of neutron |
| JPS56146229A (en) * | 1980-04-16 | 1981-11-13 | Fujitsu Ltd | Manufacture of germanium semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5438056B2 (enExample) | 1979-11-19 |