JPS4838993B1 - - Google Patents

Info

Publication number
JPS4838993B1
JPS4838993B1 JP41008645A JP864566A JPS4838993B1 JP S4838993 B1 JPS4838993 B1 JP S4838993B1 JP 41008645 A JP41008645 A JP 41008645A JP 864566 A JP864566 A JP 864566A JP S4838993 B1 JPS4838993 B1 JP S4838993B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41008645A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4838993B1 publication Critical patent/JPS4838993B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/145Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/039Displace P-N junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Bipolar Integrated Circuits (AREA)
JP41008645A 1965-02-16 1966-02-15 Pending JPS4838993B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US433088A US3270293A (en) 1965-02-16 1965-02-16 Two terminal semiconductor high frequency oscillator

Publications (1)

Publication Number Publication Date
JPS4838993B1 true JPS4838993B1 (ja) 1973-11-21

Family

ID=23718804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41008645A Pending JPS4838993B1 (ja) 1965-02-16 1966-02-15

Country Status (4)

Country Link
US (2) US3270293A (ja)
JP (1) JPS4838993B1 (ja)
GB (1) GB1142585A (ja)
NL (1) NL145414B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544028U (ja) * 1977-06-10 1979-01-11

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469208A (en) * 1965-02-27 1969-09-23 Hitachi Ltd Microwave solid-state oscillator device and a method for varying the oscillation frequency thereof
US3366805A (en) * 1965-05-03 1968-01-30 Marshall D. Bear Semiconductor diode microwave pulse generator
DE1516754B1 (de) * 1965-05-27 1972-06-08 Fujitsu Ltd Halbleitervorrichtung
DE1514655A1 (de) * 1965-12-30 1969-08-28 Siemens Ag Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall
US3493821A (en) * 1967-01-27 1970-02-03 Fairchild Camera Instr Co Microwave negative resistance avalanche diode
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
JPS4822374B1 (ja) * 1968-10-17 1973-07-05
US3593196A (en) * 1969-02-19 1971-07-13 Omni Spectra Inc Type of avalanche diode
US3684901A (en) * 1970-05-15 1972-08-15 Sperry Rand Corp High frequency diode energy transducer and method of manufacture
US3612914A (en) * 1970-08-25 1971-10-12 Bell Telephone Labor Inc Avalanche diode circuits
US3890630A (en) * 1973-10-09 1975-06-17 Rca Corp Impatt diode
US3926693A (en) * 1974-04-29 1975-12-16 Rca Corp Method of making a double diffused trapatt diode
US3976873A (en) * 1975-05-08 1976-08-24 The United States Of America As Represented By The Secretary Of The Navy Tunable electroabsorptive detector
DE19713962C1 (de) * 1997-04-04 1998-07-02 Siemens Ag Leistungsdiode (FCI-Diode)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899646A (en) * 1959-08-11 Tread
US2908871A (en) * 1954-10-26 1959-10-13 Bell Telephone Labor Inc Negative resistance semiconductive apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544028U (ja) * 1977-06-10 1979-01-11

Also Published As

Publication number Publication date
DE1516061A1 (de) 1969-07-31
NL145414B (nl) 1975-03-17
NL6601916A (ja) 1966-08-17
DE1516061B2 (de) 1973-05-10
USB433088I5 (ja)
GB1142585A (en) 1969-02-12
US3270293A (en) 1966-08-30

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