JPS4837232B1 - - Google Patents

Info

Publication number
JPS4837232B1
JPS4837232B1 JP43088303A JP8830368A JPS4837232B1 JP S4837232 B1 JPS4837232 B1 JP S4837232B1 JP 43088303 A JP43088303 A JP 43088303A JP 8830368 A JP8830368 A JP 8830368A JP S4837232 B1 JPS4837232 B1 JP S4837232B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43088303A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43088303A priority Critical patent/JPS4837232B1/ja
Priority to US00881739A priority patent/US3736192A/en
Publication of JPS4837232B1 publication Critical patent/JPS4837232B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
JP43088303A 1968-12-04 1968-12-04 Pending JPS4837232B1 (show.php)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP43088303A JPS4837232B1 (show.php) 1968-12-04 1968-12-04
US00881739A US3736192A (en) 1968-12-04 1969-12-03 Integrated circuit and method of making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43088303A JPS4837232B1 (show.php) 1968-12-04 1968-12-04

Publications (1)

Publication Number Publication Date
JPS4837232B1 true JPS4837232B1 (show.php) 1973-11-09

Family

ID=13939143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43088303A Pending JPS4837232B1 (show.php) 1968-12-04 1968-12-04

Country Status (2)

Country Link
US (1) US3736192A (show.php)
JP (1) JPS4837232B1 (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434643U (show.php) * 1977-08-12 1979-03-07
JPS5434644U (show.php) * 1977-08-12 1979-03-07

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs
US3841918A (en) * 1972-12-01 1974-10-15 Bell Telephone Labor Inc Method of integrated circuit fabrication
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3887994A (en) * 1973-06-29 1975-06-10 Ibm Method of manufacturing a semiconductor device
GB1486265A (en) * 1973-10-17 1977-09-21 Hitachi Ltd Method for producing an amorphous state of a solid material
US3925106A (en) * 1973-12-26 1975-12-09 Ibm Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance
US3976511A (en) * 1975-06-30 1976-08-24 Ibm Corporation Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4135292A (en) * 1976-07-06 1979-01-23 Intersil, Inc. Integrated circuit contact and method for fabricating the same
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4559086A (en) * 1984-07-02 1985-12-17 Eastman Kodak Company Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions
US6465370B1 (en) * 1998-06-26 2002-10-15 Infineon Technologies Ag Low leakage, low capacitance isolation material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434643U (show.php) * 1977-08-12 1979-03-07
JPS5434644U (show.php) * 1977-08-12 1979-03-07

Also Published As

Publication number Publication date
US3736192A (en) 1973-05-29

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