JPS4831885A - - Google Patents

Info

Publication number
JPS4831885A
JPS4831885A JP47085019A JP8501972A JPS4831885A JP S4831885 A JPS4831885 A JP S4831885A JP 47085019 A JP47085019 A JP 47085019A JP 8501972 A JP8501972 A JP 8501972A JP S4831885 A JPS4831885 A JP S4831885A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47085019A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4831885A publication Critical patent/JPS4831885A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP47085019A 1971-08-26 1972-08-26 Pending JPS4831885A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17506471A 1971-08-26 1971-08-26

Publications (1)

Publication Number Publication Date
JPS4831885A true JPS4831885A (enrdf_load_stackoverflow) 1973-04-26

Family

ID=22638709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47085019A Pending JPS4831885A (enrdf_load_stackoverflow) 1971-08-26 1972-08-26

Country Status (2)

Country Link
JP (1) JPS4831885A (enrdf_load_stackoverflow)
DE (1) DE2241919A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502479A (enrdf_load_stackoverflow) * 1973-05-07 1975-01-11
JPS5558682U (enrdf_load_stackoverflow) * 1978-10-13 1980-04-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502479A (enrdf_load_stackoverflow) * 1973-05-07 1975-01-11
JPS5558682U (enrdf_load_stackoverflow) * 1978-10-13 1980-04-21

Also Published As

Publication number Publication date
DE2241919A1 (de) 1973-03-08

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