JPS4831081A - - Google Patents

Info

Publication number
JPS4831081A
JPS4831081A JP47051580A JP5158072A JPS4831081A JP S4831081 A JPS4831081 A JP S4831081A JP 47051580 A JP47051580 A JP 47051580A JP 5158072 A JP5158072 A JP 5158072A JP S4831081 A JPS4831081 A JP S4831081A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47051580A
Other languages
Japanese (ja)
Other versions
JPS5138590B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4831081A publication Critical patent/JPS4831081A/ja
Publication of JPS5138590B2 publication Critical patent/JPS5138590B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP47051580A 1971-08-26 1972-05-24 Expired JPS5138590B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17519771A 1971-08-26 1971-08-26

Publications (2)

Publication Number Publication Date
JPS4831081A true JPS4831081A (enExample) 1973-04-24
JPS5138590B2 JPS5138590B2 (enExample) 1976-10-22

Family

ID=22639340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47051580A Expired JPS5138590B2 (enExample) 1971-08-26 1972-05-24

Country Status (2)

Country Link
US (1) US3747016A (enExample)
JP (1) JPS5138590B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022589A (enExample) * 1973-05-29 1975-03-11
US4447641A (en) * 1982-07-26 1984-05-08 Standard Oil Company (Indiana) Process for preparation of alpha, beta-unsaturated esters using AMS-1B borosilicate crystalline molecular sieve

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
US4001055A (en) * 1973-05-28 1977-01-04 Charmakadze Revaz A Semiconductor light-emitting diode and method for producing same
JPS5751276B2 (enExample) * 1973-10-23 1982-11-01
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
US4372791A (en) * 1979-04-30 1983-02-08 Massachusetts Institute Of Technology Method for fabricating DH lasers
US4331938A (en) * 1980-08-25 1982-05-25 Rca Corporation Injection laser diode array having high conductivity regions in the substrate
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device
US4380862A (en) * 1981-11-16 1983-04-26 Rca Corporation Method for supplying a low resistivity electrical contact to a semiconductor laser device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299675A (enExample) * 1962-10-24 1900-01-01
GB1047301A (enExample) * 1963-03-22
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
JPS5141318B1 (enExample) * 1969-04-01 1976-11-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022589A (enExample) * 1973-05-29 1975-03-11
US4447641A (en) * 1982-07-26 1984-05-08 Standard Oil Company (Indiana) Process for preparation of alpha, beta-unsaturated esters using AMS-1B borosilicate crystalline molecular sieve

Also Published As

Publication number Publication date
US3747016A (en) 1973-07-17
JPS5138590B2 (enExample) 1976-10-22

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