JPS4830880A - - Google Patents

Info

Publication number
JPS4830880A
JPS4830880A JP6364971A JP6364971A JPS4830880A JP S4830880 A JPS4830880 A JP S4830880A JP 6364971 A JP6364971 A JP 6364971A JP 6364971 A JP6364971 A JP 6364971A JP S4830880 A JPS4830880 A JP S4830880A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6364971A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6364971A priority Critical patent/JPS4830880A/ja
Priority to FR7229948A priority patent/FR2150439B1/fr
Priority to DE19722241472 priority patent/DE2241472A1/en
Priority to IT5231572A priority patent/IT962195B/en
Priority to GB3934872A priority patent/GB1362919A/en
Publication of JPS4830880A publication Critical patent/JPS4830880A/ja
Priority to US05/598,758 priority patent/US4011653A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
JP6364971A 1971-08-23 1971-08-23 Pending JPS4830880A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP6364971A JPS4830880A (en) 1971-08-23 1971-08-23
FR7229948A FR2150439B1 (en) 1971-08-23 1972-08-22
DE19722241472 DE2241472A1 (en) 1971-08-23 1972-08-23 INTEGRATED SEMI-CONDUCTOR CIRCUIT
IT5231572A IT962195B (en) 1971-08-23 1972-08-23 SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR TRANSISTOR OF THE INSULATING GRID TYPE
GB3934872A GB1362919A (en) 1971-08-23 1972-08-23 Semiconductor integrated circuit including an insulating gate type semiconductor transistor
US05/598,758 US4011653A (en) 1971-08-23 1975-07-25 Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6364971A JPS4830880A (en) 1971-08-23 1971-08-23

Publications (1)

Publication Number Publication Date
JPS4830880A true JPS4830880A (en) 1973-04-23

Family

ID=13235393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6364971A Pending JPS4830880A (en) 1971-08-23 1971-08-23

Country Status (5)

Country Link
JP (1) JPS4830880A (en)
DE (1) DE2241472A1 (en)
FR (1) FR2150439B1 (en)
GB (1) GB1362919A (en)
IT (1) IT962195B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136882A (en) * 1974-09-24 1976-03-27 Nippon Electric Co DENKAIKOKAHANDOTAISOCHINOSEIZOHOHO

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2921993A1 (en) * 1979-05-30 1980-12-04 Siemens Ag SEMICONDUCTOR MEMORY

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831035A (en) * 1971-08-26 1973-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831035A (en) * 1971-08-26 1973-04-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136882A (en) * 1974-09-24 1976-03-27 Nippon Electric Co DENKAIKOKAHANDOTAISOCHINOSEIZOHOHO

Also Published As

Publication number Publication date
GB1362919A (en) 1974-08-07
FR2150439B1 (en) 1974-08-19
DE2241472A1 (en) 1973-03-08
FR2150439A1 (en) 1973-04-06
IT962195B (en) 1973-12-20

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