JPS4830712B1 - - Google Patents

Info

Publication number
JPS4830712B1
JPS4830712B1 JP41085557A JP8555766A JPS4830712B1 JP S4830712 B1 JPS4830712 B1 JP S4830712B1 JP 41085557 A JP41085557 A JP 41085557A JP 8555766 A JP8555766 A JP 8555766A JP S4830712 B1 JPS4830712 B1 JP S4830712B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41085557A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830712B1 publication Critical patent/JPS4830712B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
JP41085557A 1965-12-28 1966-12-27 Pending JPS4830712B1 (US07922777-20110412-C00004.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0030152 1965-12-28

Publications (1)

Publication Number Publication Date
JPS4830712B1 true JPS4830712B1 (US07922777-20110412-C00004.png) 1973-09-22

Family

ID=7555403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41085557A Pending JPS4830712B1 (US07922777-20110412-C00004.png) 1965-12-28 1966-12-27

Country Status (4)

Country Link
US (1) US3507715A (US07922777-20110412-C00004.png)
JP (1) JPS4830712B1 (US07922777-20110412-C00004.png)
FR (1) FR1506762A (US07922777-20110412-C00004.png)
GB (1) GB1099049A (US07922777-20110412-C00004.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758831A (en) * 1971-06-07 1973-09-11 Motorola Inc Transistor with improved breakdown mode
JPS5648981B2 (US07922777-20110412-C00004.png) * 1973-05-25 1981-11-19
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
US5340752A (en) * 1992-10-23 1994-08-23 Ncr Corporation Method for forming a bipolar transistor using doped SOG

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion

Also Published As

Publication number Publication date
US3507715A (en) 1970-04-21
DE1514912B2 (de) 1975-10-16
FR1506762A (fr) 1967-12-22
DE1514912A1 (de) 1969-06-26
GB1099049A (en) 1968-01-10

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