JPS4826375A - - Google Patents

Info

Publication number
JPS4826375A
JPS4826375A JP47078729A JP7872972A JPS4826375A JP S4826375 A JPS4826375 A JP S4826375A JP 47078729 A JP47078729 A JP 47078729A JP 7872972 A JP7872972 A JP 7872972A JP S4826375 A JPS4826375 A JP S4826375A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47078729A
Other languages
Japanese (ja)
Other versions
JPS5415666B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826375A publication Critical patent/JPS4826375A/ja
Publication of JPS5415666B2 publication Critical patent/JPS5415666B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • H10D30/831Vertical FETs having PN junction gate electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7872972A 1971-08-05 1972-08-05 Expired JPS5415666B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7128793A FR2147883B1 (OSRAM) 1971-08-05 1971-08-05

Publications (2)

Publication Number Publication Date
JPS4826375A true JPS4826375A (OSRAM) 1973-04-06
JPS5415666B2 JPS5415666B2 (OSRAM) 1979-06-16

Family

ID=9081533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7872972A Expired JPS5415666B2 (OSRAM) 1971-08-05 1972-08-05

Country Status (5)

Country Link
US (1) US3767982A (OSRAM)
JP (1) JPS5415666B2 (OSRAM)
DE (1) DE2238278C3 (OSRAM)
FR (1) FR2147883B1 (OSRAM)
GB (1) GB1334660A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099482A (OSRAM) * 1973-12-28 1975-08-07
JPS5158077A (en) * 1974-11-18 1976-05-21 Matsushita Electric Industrial Co Ltd Mos gatahandotaisochino seizohoho

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
US3982264A (en) * 1973-04-25 1976-09-21 Sony Corporation Junction gated field effect transistor
JPS49134282A (OSRAM) * 1973-04-25 1974-12-24
US4106044A (en) * 1974-03-16 1978-08-08 Nippon Gakki Seizo Kabushiki Kaisha Field effect transistor having unsaturated characteristics
JPS50135989A (OSRAM) * 1974-04-06 1975-10-28
JPS50146449U (OSRAM) * 1974-05-21 1975-12-04
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
JPS5220769A (en) * 1975-08-09 1977-02-16 Nippon Gakki Seizo Kk Longitudinal semi-conductor unit
GB2075401B (en) * 1980-04-02 1983-07-27 Fawzy El Menshawy Mohamed Improvements in methods and apparatus for electrical discharge machining
US4959697A (en) * 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor
US5098862A (en) * 1990-11-07 1992-03-24 Gte Laboratories Incorporated Method of making ohmic electrical contact to a matrix of semiconductor material
JPH07502379A (ja) * 1991-12-23 1995-03-09 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 電子部品およびその製造方法
EP0874394A3 (en) * 1997-04-23 2000-09-13 Motorola, Inc. GaAs vertical fet
TWI327754B (en) * 2006-01-04 2010-07-21 Promos Technologies Inc Method for preparing gate oxide layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
FR1497548A (fr) * 1966-07-22 1967-10-13 Jeumont Schneider Dispositif semi-conducteur bistable pour courants forts
US3431150A (en) * 1966-10-07 1969-03-04 Us Air Force Process for implanting grids in semiconductor devices
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099482A (OSRAM) * 1973-12-28 1975-08-07
JPS5158077A (en) * 1974-11-18 1976-05-21 Matsushita Electric Industrial Co Ltd Mos gatahandotaisochino seizohoho

Also Published As

Publication number Publication date
JPS5415666B2 (OSRAM) 1979-06-16
US3767982A (en) 1973-10-23
FR2147883B1 (OSRAM) 1977-01-28
DE2238278A1 (de) 1973-02-15
DE2238278C3 (de) 1975-04-10
GB1334660A (en) 1973-10-24
FR2147883A1 (OSRAM) 1973-03-11
DE2238278B2 (de) 1974-08-15

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