JPS4826179B1 - - Google Patents

Info

Publication number
JPS4826179B1
JPS4826179B1 JP43070131A JP7013168A JPS4826179B1 JP S4826179 B1 JPS4826179 B1 JP S4826179B1 JP 43070131 A JP43070131 A JP 43070131A JP 7013168 A JP7013168 A JP 7013168A JP S4826179 B1 JPS4826179 B1 JP S4826179B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43070131A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43070131A priority Critical patent/JPS4826179B1/ja
Priority to US860303A priority patent/US3607449A/en
Publication of JPS4826179B1 publication Critical patent/JPS4826179B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
JP43070131A 1968-09-30 1968-09-30 Pending JPS4826179B1 (enExample)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP43070131A JPS4826179B1 (enExample) 1968-09-30 1968-09-30
US860303A US3607449A (en) 1968-09-30 1969-09-23 Method of forming a junction by ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43070131A JPS4826179B1 (enExample) 1968-09-30 1968-09-30

Publications (1)

Publication Number Publication Date
JPS4826179B1 true JPS4826179B1 (enExample) 1973-08-07

Family

ID=13422685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43070131A Pending JPS4826179B1 (enExample) 1968-09-30 1968-09-30

Country Status (2)

Country Link
US (1) US3607449A (enExample)
JP (1) JPS4826179B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005531158A (ja) * 2002-06-26 2005-10-13 セムエキップ インコーポレイテッド 半導体デバイス及び半導体デバイスの製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
US4596068A (en) * 1983-12-28 1986-06-24 Harris Corporation Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface
US4758537A (en) * 1985-09-23 1988-07-19 National Semiconductor Corporation Lateral subsurface zener diode making process
US4774196A (en) * 1987-08-25 1988-09-27 Siliconix Incorporated Method of bonding semiconductor wafers
EP0311816A1 (de) * 1987-10-15 1989-04-19 BBC Brown Boveri AG Halbleiterbauelement und Verfahren zu dessen Herstellung
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics
DE4306565C2 (de) * 1993-03-03 1995-09-28 Telefunken Microelectron Verfahren zur Herstellung eines blauempfindlichen Photodetektors
TW304293B (en) * 1996-11-18 1997-05-01 United Microelectronics Corp Manufacturing method for shallow trench isolation
US6329704B1 (en) * 1999-12-09 2001-12-11 International Business Machines Corporation Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer
US20080200020A1 (en) * 2003-06-18 2008-08-21 Semequip, Inc. Semiconductor device and method of fabricating a semiconductor device
US6995079B2 (en) * 2003-08-29 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Ion implantation method and method for manufacturing semiconductor device
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US8932894B2 (en) * 2007-10-09 2015-01-13 The United States of America, as represented by the Secratary of the Navy Methods and systems of curved radiation detector fabrication
JP5220549B2 (ja) * 2008-10-20 2013-06-26 本田技研工業株式会社 アウタロータ型多極発電機のステータ構造体
US9685479B2 (en) 2015-03-31 2017-06-20 Semiconductor Components Industries, Llc Method of forming a shallow pinned photodiode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3489622A (en) * 1967-05-18 1970-01-13 Ibm Method of making high frequency transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005531158A (ja) * 2002-06-26 2005-10-13 セムエキップ インコーポレイテッド 半導体デバイス及び半導体デバイスの製造方法
JP2010161397A (ja) * 2002-06-26 2010-07-22 Semequip Inc 半導体デバイス及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US3607449A (en) 1971-09-21

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