JPS482562U - - Google Patents

Info

Publication number
JPS482562U
JPS482562U JP1971042557U JP4255771U JPS482562U JP S482562 U JPS482562 U JP S482562U JP 1971042557 U JP1971042557 U JP 1971042557U JP 4255771 U JP4255771 U JP 4255771U JP S482562 U JPS482562 U JP S482562U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1971042557U
Other languages
Japanese (ja)
Other versions
JPS5531817Y2 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1971042557U priority Critical patent/JPS5531817Y2/ja
Publication of JPS482562U publication Critical patent/JPS482562U/ja
Application granted granted Critical
Publication of JPS5531817Y2 publication Critical patent/JPS5531817Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
JP1971042557U 1971-05-25 1971-05-25 Expired JPS5531817Y2 (cg-RX-API-DMAC7.html)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1971042557U JPS5531817Y2 (cg-RX-API-DMAC7.html) 1971-05-25 1971-05-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1971042557U JPS5531817Y2 (cg-RX-API-DMAC7.html) 1971-05-25 1971-05-25

Publications (2)

Publication Number Publication Date
JPS482562U true JPS482562U (cg-RX-API-DMAC7.html) 1973-01-12
JPS5531817Y2 JPS5531817Y2 (cg-RX-API-DMAC7.html) 1980-07-29

Family

ID=27915500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1971042557U Expired JPS5531817Y2 (cg-RX-API-DMAC7.html) 1971-05-25 1971-05-25

Country Status (1)

Country Link
JP (1) JPS5531817Y2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967847U (ja) * 1982-10-29 1984-05-08 日本電気株式会社 陰極線管用電子銃構体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967847U (ja) * 1982-10-29 1984-05-08 日本電気株式会社 陰極線管用電子銃構体

Also Published As

Publication number Publication date
JPS5531817Y2 (cg-RX-API-DMAC7.html) 1980-07-29

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