JPS4823334Y1 - - Google Patents

Info

Publication number
JPS4823334Y1
JPS4823334Y1 JP9542168U JP9542168U JPS4823334Y1 JP S4823334 Y1 JPS4823334 Y1 JP S4823334Y1 JP 9542168 U JP9542168 U JP 9542168U JP 9542168 U JP9542168 U JP 9542168U JP S4823334 Y1 JPS4823334 Y1 JP S4823334Y1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9542168U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9542168U priority Critical patent/JPS4823334Y1/ja
Publication of JPS4823334Y1 publication Critical patent/JPS4823334Y1/ja
Expired legal-status Critical Current

Links

JP9542168U 1968-11-04 1968-11-04 Expired JPS4823334Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9542168U JPS4823334Y1 (en) 1968-11-04 1968-11-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9542168U JPS4823334Y1 (en) 1968-11-04 1968-11-04

Publications (1)

Publication Number Publication Date
JPS4823334Y1 true JPS4823334Y1 (en) 1973-07-06

Family

ID=33258575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9542168U Expired JPS4823334Y1 (en) 1968-11-04 1968-11-04

Country Status (1)

Country Link
JP (1) JPS4823334Y1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258450A (en) * 2009-04-25 2010-11-11 ▲徳▼微科技股▲分▼有限公司 Schottky diode with improved high current behavior and method for producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258450A (en) * 2009-04-25 2010-11-11 ▲徳▼微科技股▲分▼有限公司 Schottky diode with improved high current behavior and method for producing the same

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