JPS4733548U - - Google Patents

Info

Publication number
JPS4733548U
JPS4733548U JP3898571U JP3898571U JPS4733548U JP S4733548 U JPS4733548 U JP S4733548U JP 3898571 U JP3898571 U JP 3898571U JP 3898571 U JP3898571 U JP 3898571U JP S4733548 U JPS4733548 U JP S4733548U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3898571U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3898571U priority Critical patent/JPS4733548U/ja
Publication of JPS4733548U publication Critical patent/JPS4733548U/ja
Pending legal-status Critical Current

Links

JP3898571U 1971-05-14 1971-05-14 Pending JPS4733548U (xx)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3898571U JPS4733548U (xx) 1971-05-14 1971-05-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3898571U JPS4733548U (xx) 1971-05-14 1971-05-14

Publications (1)

Publication Number Publication Date
JPS4733548U true JPS4733548U (xx) 1972-12-14

Family

ID=27908826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3898571U Pending JPS4733548U (xx) 1971-05-14 1971-05-14

Country Status (1)

Country Link
JP (1) JPS4733548U (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

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