JPS4615858B1 - - Google Patents
Info
- Publication number
- JPS4615858B1 JPS4615858B1 JP2092769A JP2092769A JPS4615858B1 JP S4615858 B1 JPS4615858 B1 JP S4615858B1 JP 2092769 A JP2092769 A JP 2092769A JP 2092769 A JP2092769 A JP 2092769A JP S4615858 B1 JPS4615858 B1 JP S4615858B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10W40/10—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
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- H10P14/263—
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- H10P14/265—
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- H10P14/271—
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- H10P14/3421—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/955—Melt-back
Landscapes
- Electrodes Of Semiconductors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71590268A | 1968-03-25 | 1968-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4615858B1 true JPS4615858B1 (enExample) | 1971-04-28 |
Family
ID=24875933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2092769A Pending JPS4615858B1 (enExample) | 1968-03-25 | 1969-03-20 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3535772A (enExample) |
| JP (1) | JPS4615858B1 (enExample) |
| BE (1) | BE726525A (enExample) |
| DE (1) | DE1911335B2 (enExample) |
| FR (1) | FR1600035A (enExample) |
| GB (1) | GB1252636A (enExample) |
| NL (1) | NL6901441A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3827399A (en) * | 1968-09-27 | 1974-08-06 | Matsushita Electric Industrial Co Ltd | Apparatus for epitaxial growth from the liquid state |
| US3804060A (en) * | 1970-03-27 | 1974-04-16 | Sperry Rand Corp | Liquid epitaxy apparatus |
| US3715245A (en) * | 1971-02-17 | 1973-02-06 | Gen Electric | Selective liquid phase epitaxial growth process |
| JPS55163835A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Selective liquid phase growth of on semiconductor region |
| DE2936800A1 (de) * | 1979-09-12 | 1981-04-02 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen eines pn-ueberganges durch fluessig-epitaxie |
| US4824520A (en) * | 1987-03-19 | 1989-04-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid encapsulated crystal growth |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3270399A (en) * | 1962-04-24 | 1966-09-06 | Burroughs Corp | Method of fabricating semiconductor devices |
| US3423255A (en) * | 1965-03-31 | 1969-01-21 | Westinghouse Electric Corp | Semiconductor integrated circuits and method of making the same |
| US3436666A (en) * | 1967-06-05 | 1969-04-01 | Texas Instruments Inc | Solid state traveling wave amplifier |
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1968
- 1968-03-25 US US715902A patent/US3535772A/en not_active Expired - Lifetime
- 1968-12-30 FR FR1600035D patent/FR1600035A/fr not_active Expired
-
1969
- 1969-01-06 BE BE726525D patent/BE726525A/xx unknown
- 1969-01-29 NL NL6901441A patent/NL6901441A/xx unknown
- 1969-03-06 DE DE19691911335 patent/DE1911335B2/de active Pending
- 1969-03-20 JP JP2092769A patent/JPS4615858B1/ja active Pending
- 1969-03-20 GB GB1252636D patent/GB1252636A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3535772A (en) | 1970-10-27 |
| NL6901441A (enExample) | 1969-09-29 |
| BE726525A (enExample) | 1969-06-16 |
| FR1600035A (enExample) | 1970-07-20 |
| DE1911335B2 (de) | 1971-08-12 |
| GB1252636A (enExample) | 1971-11-10 |
| DE1911335A1 (de) | 1969-10-02 |