JPS4524655B1 - - Google Patents
Info
- Publication number
- JPS4524655B1 JPS4524655B1 JP2107066A JP2107066A JPS4524655B1 JP S4524655 B1 JPS4524655 B1 JP S4524655B1 JP 2107066 A JP2107066 A JP 2107066A JP 2107066 A JP2107066 A JP 2107066A JP S4524655 B1 JPS4524655 B1 JP S4524655B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2107066A JPS4524655B1 (de) | 1966-04-04 | 1966-04-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2107066A JPS4524655B1 (de) | 1966-04-04 | 1966-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4524655B1 true JPS4524655B1 (de) | 1970-08-17 |
Family
ID=12044611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2107066A Pending JPS4524655B1 (de) | 1966-04-04 | 1966-04-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4524655B1 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001086707A1 (fr) * | 2000-05-08 | 2001-11-15 | Denki Kagaku Kogyo Kabushiki Kaisha | Film siox de faible permittivite relative, procede de production, dispositif semi-conducteur contenant ledit film |
| CN109796017A (zh) * | 2019-04-03 | 2019-05-24 | 昆明理工大学 | 一种高纯纳米一氧化硅的制备方法 |
-
1966
- 1966-04-04 JP JP2107066A patent/JPS4524655B1/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001086707A1 (fr) * | 2000-05-08 | 2001-11-15 | Denki Kagaku Kogyo Kabushiki Kaisha | Film siox de faible permittivite relative, procede de production, dispositif semi-conducteur contenant ledit film |
| US7164191B2 (en) | 2000-05-08 | 2007-01-16 | Denki Kagaku Kogyo Kabushiki Kaisha | Low relative permittivity SiOx film including a porous material for use with a semiconductor device |
| CN109796017A (zh) * | 2019-04-03 | 2019-05-24 | 昆明理工大学 | 一种高纯纳米一氧化硅的制备方法 |