JPS4512873Y1 - - Google Patents

Info

Publication number
JPS4512873Y1
JPS4512873Y1 JP7163065U JP7163065U JPS4512873Y1 JP S4512873 Y1 JPS4512873 Y1 JP S4512873Y1 JP 7163065 U JP7163065 U JP 7163065U JP 7163065 U JP7163065 U JP 7163065U JP S4512873 Y1 JPS4512873 Y1 JP S4512873Y1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7163065U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7163065U priority Critical patent/JPS4512873Y1/ja
Publication of JPS4512873Y1 publication Critical patent/JPS4512873Y1/ja
Expired legal-status Critical Current

Links

JP7163065U 1965-09-02 1965-09-02 Expired JPS4512873Y1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7163065U JPS4512873Y1 (pl) 1965-09-02 1965-09-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7163065U JPS4512873Y1 (pl) 1965-09-02 1965-09-02

Publications (1)

Publication Number Publication Date
JPS4512873Y1 true JPS4512873Y1 (pl) 1970-06-03

Family

ID=42841709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7163065U Expired JPS4512873Y1 (pl) 1965-09-02 1965-09-02

Country Status (1)

Country Link
JP (1) JPS4512873Y1 (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177973A (en) * 1981-04-27 1982-11-01 Toyo Ink Mfg Co Ltd Formation of simulated etching pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177973A (en) * 1981-04-27 1982-11-01 Toyo Ink Mfg Co Ltd Formation of simulated etching pattern

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