JPH1196956A - Scanning electron microscope - Google Patents
Scanning electron microscopeInfo
- Publication number
- JPH1196956A JPH1196956A JP9256455A JP25645597A JPH1196956A JP H1196956 A JPH1196956 A JP H1196956A JP 9256455 A JP9256455 A JP 9256455A JP 25645597 A JP25645597 A JP 25645597A JP H1196956 A JPH1196956 A JP H1196956A
- Authority
- JP
- Japan
- Prior art keywords
- detector
- electron microscope
- sample
- scanning electron
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000005136 cathodoluminescence Methods 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- 238000004020 luminiscence type Methods 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- 230000005284 excitation Effects 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000009924 canning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、試料に電子線を照
射してカソードルミネッセンス像を観察する装置に係
り、特に低真空雰囲気型走査電子顕微鏡に用いるのに好
適な試料像観察装置。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for observing a cathodoluminescence image by irradiating a sample with an electron beam, and more particularly to a sample image observing apparatus suitable for use in a low vacuum atmosphere scanning electron microscope.
【0002】[0002]
【従来の技術】電子線の照射により、試料から発生する
光を信号として像観察する装置いわゆるカソードルミネ
ッセンス像装置は、従来より走査電子顕微鏡(Scanning
Electron Microscope:以下、SEMと略す)に取り付け
て、誘電体,イオン結晶,半導体などの研究に用いられ
ている。光(カソードルミネッセンス)検出器は通常、
観察する試料の上方(対物レンズの下方)に配置され
る。By irradiation of the Related Art electron beam apparatus called cathode luminescence image system for image observation light as a signal generated from the sample is scanned conventionally electron microscope (S canning
E lectron M icroscope: hereinafter, mounted on abbreviated as SEM), dielectric, are used in ionic crystals, research on semiconductor. Light (cathodoluminescence) detectors are usually
It is arranged above the sample to be observed (below the objective lens).
【0003】光検出器を配置している状態で二次電子の
検出を行う場合、二次電子検出器から発生する二次電子
捕集電界が光検出器により遮蔽されてしまうため、二次
電子の捕集効率が低下することで二次電子検出による観
察が困難となってしまう。また、低真空雰囲気型走査電
子顕微鏡では検出手段として反射電子検出器を用いてい
る。反射電子検出器は光検出器と同じ対物レンズの下方
に配置される。このため、光検出器と同時に反射電子の
検出を行うことが困難となってしまう。When secondary electrons are detected in a state where a photodetector is arranged, a secondary electron collecting electric field generated from the secondary electron detector is shielded by the photodetector. Observation by secondary electron detection becomes difficult due to a decrease in the efficiency of trapping of electrons. In a low vacuum atmosphere scanning electron microscope, a backscattered electron detector is used as a detecting means. The backscattered electron detector is located below the same objective lens as the photodetector. For this reason, it becomes difficult to detect the reflected electrons simultaneously with the photodetector.
【0004】[0004]
【発明が解決しようとする課題】上記従来技術は高真空
型走査電子顕微鏡においてカソードルミネッセンス像観
察をする場合、光検出器が対物レンズの下方に配置され
て光検出を行う。この状態では二次電子像観察あるいは
反射電子像観察を行う場合、光検出器を対物レンズの下
面位置から引出すかあるいは移動させなければならない
問題があった。In the prior art, when observing a cathodoluminescence image in a high vacuum scanning electron microscope, a photodetector is disposed below an objective lens to detect light. In this state, when the secondary electron image observation or the backscattered electron image observation is performed, there is a problem that the photodetector must be pulled out or moved from the lower surface position of the objective lens.
【0005】また低真空雰囲気型走査電子顕微鏡におい
てカソードルミネッセンス像観察をする場合も同様に、
光検出器が対物レンズの下方に配置されて光検出を行
う。この状態では、反射電子像観察を行う場合、光検出
器を対物レンズの下面位置から引出すかあるいは移動さ
せなければならない問題があった。Similarly, when observing a cathodoluminescence image with a low vacuum atmosphere scanning electron microscope,
A light detector is arranged below the objective lens to perform light detection. In this state, when performing backscattered electron image observation, there is a problem that the photodetector must be pulled out or moved from the lower surface position of the objective lens.
【0006】本発明の目的は、上記した従来技術の欠点
をなくし、高真空型走査電子顕微鏡においても低真空雰
囲気型走査電子顕微鏡においても光検出器を対物レンズ
下面に配置した状態で反射電子検出器を対物レンズ下面
より離すことなく、カソードルミネッセンス像と反射電
子像を同時に観察できる装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned disadvantages of the prior art and to detect backscattered electrons in a high vacuum type scanning electron microscope and a low vacuum atmosphere type scanning electron microscope with the photodetector arranged below the objective lens. It is an object of the present invention to provide an apparatus capable of observing a cathodoluminescence image and a reflected electron image at the same time without separating the device from the lower surface of the objective lens.
【0007】[0007]
【課題を解決するための手段】上記した目的を達成する
ためには、反射電子検出器と光検出器を同一検出器とす
ることで達成される。The above object can be attained by making the backscattered electron detector and the photodetector the same detector.
【0008】[0008]
【発明の実施の形態】以下本発明の実施例を図面を用い
て記述する。Embodiments of the present invention will be described below with reference to the drawings.
【0009】図1は本発明の一実施例を示す構成概略図
である。低真空雰囲気型走査電子顕微鏡に、本発明の請
求項1または2に記載の反射電子検出器とカソードルミ
ネッセンス検出器を同一検出器とした実施例である。FIG. 1 is a schematic diagram showing an embodiment of the present invention. This is an embodiment in which the backscattered electron detector and the cathodoluminescence detector according to claim 1 or 2 of the present invention are the same detector in a low vacuum atmosphere scanning electron microscope.
【0010】図1において、電子銃1から取り出された
電子ビーム2は、収束レンズ3と対物レンズ4によって
細い電子ビームに収束され、走査電源5に接続された偏
向コイル6によって試料7上で走査される。電子線の照
射によって試料からは、二次電子,反射電子,特性X
線,光などの信号が発生する。通常高真空型走査電子顕
微鏡では観察時には二次電子を二次電子検出器8で検出
するが、低真空雰囲気型走査電子顕微鏡は試料室圧力を
1Pa〜540Paと低真空にするために二次電子検出
器に用いる後段加速電圧の高電圧が印加できないため、
検出できる信号は反射電子となる。In FIG. 1, an electron beam 2 extracted from an electron gun 1 is converged into a thin electron beam by a converging lens 3 and an objective lens 4, and is scanned on a sample 7 by a deflection coil 6 connected to a scanning power supply 5. Is done. Secondary electrons, reflected electrons, characteristic X
Signals such as lines and light are generated. Normally, a secondary electron is detected by the secondary electron detector 8 during observation in a high vacuum scanning electron microscope, but a secondary electron detector 8 is used in a low vacuum atmosphere scanning electron microscope to reduce the sample chamber pressure to 1 Pa to 540 Pa. Because the high voltage of the post-acceleration voltage used for the detector cannot be applied,
The signal that can be detected is reflected electrons.
【0011】この反射電子信号を検出するため、対物レ
ンズ4と試料7の間に、反射電子検出器9が設けられて
いる。検出された反射電子信号は信号増幅器10からの
信号を映像信号選択回路11を通してCRT12の輝度
変調端子に入力され、反射電子信号による走査像が観察
できるようになっている。A backscattered electron detector 9 is provided between the objective lens 4 and the sample 7 to detect the backscattered electron signal. With respect to the detected reflected electron signal, a signal from the signal amplifier 10 is input to the luminance modulation terminal of the CRT 12 through the video signal selection circuit 11, so that a scanning image based on the reflected electron signal can be observed.
【0012】一方、一般的なカソードルミネッセンス検
出手段はアルミ蒸着ミラー13,ライトガイド20,オ
プティカルファイバー14,分光計15などから構成さ
れ、カソードルミネッセンス像用信号増幅回路16を介
して映像信号選択回路11につながっている。また、通
常図示されていないが試料7を保持する試料ステージお
よび試料ホルダがあり試料7を含めて液体窒素または液
体ヘリウム温度近くまで冷却することにより、試料7か
らのカソードルミネッセンス発光効率を上げ、微細構造
をもつスペクトルが得られるように、極めて低い温度に
保つ冷却手段が設けられている。On the other hand, a general cathodoluminescence detecting means comprises an aluminum-evaporated mirror 13, a light guide 20, an optical fiber 14, a spectrometer 15, and the like, and a video signal selection circuit 11 through a cathodoluminescence image signal amplifying circuit 16. Is connected to In addition, although not shown, there is a sample stage and a sample holder for holding the sample 7, and by cooling the sample and the sample 7 to a temperature close to the temperature of liquid nitrogen or liquid helium, the efficiency of cathodoluminescence from the sample 7 is increased. In order to obtain a structured spectrum, a cooling means for keeping the temperature extremely low is provided.
【0013】図1は本発明の一実施例を示す構成概略図
である。電子ビーム2の照射によって試料7表面から発
生するカソードルミネッセンス光23を検出するための
光検出器と反射電子22を検出するための反射電子検出
器9とを組合わせて同一の検出器とすることとした。光
検出器は蛍光体あるいはシンチレータ17で構成されて
おり、その形状は図1に示すように試料7の方向に対し
て楕円形となっており、その表面はアルミなどが蒸着さ
れることでアルミ蒸着ミラーとなっている。楕円形の一
焦点は試料7上にありもう一方の焦点は光検出用ライト
ガイド20端面にある。FIG. 1 is a schematic diagram showing an embodiment of the present invention. Combining a photodetector for detecting cathodoluminescence light 23 generated from the surface of the sample 7 by irradiation of the electron beam 2 and a backscattered electron detector 9 for detecting backscattered electrons 22 to form the same detector And The photodetector is composed of a phosphor or a scintillator 17, and its shape is elliptical with respect to the direction of the sample 7, as shown in FIG. It is a deposition mirror. One focus of the ellipse is on the sample 7 and the other focus is on the end face of the light guide 20 for light detection.
【0014】試料7から発生したカソードルミネッセン
ス光23をアルミ蒸着ミラー13よりオプティカルファ
イバー14,分光計15を介しカソードルミネッセンス
像用信号増幅回路16からの信号を映像信号選択回路1
1を通してCRT12の輝度変調端子に入力されカソー
ドルミネッセンス像が観察できるようになっている。こ
のとき、試料7から発光したカソードルミネッセンス光
23はアルミ蒸着ミラー13を通り抜けられないため反
射電子22を検出するための反射電子検出器へは障害を
及ぼさない。The cathodoluminescence light 23 generated from the sample 7 is transmitted from the aluminum vaporized mirror 13 through the optical fiber 14 and the spectrometer 15 to the signal from the cathodoluminescence image signal amplification circuit 16 through the video signal selection circuit 1.
1 and is input to the luminance modulation terminal of the CRT 12 so that a cathodoluminescence image can be observed. At this time, the cathodoluminescence light 23 emitted from the sample 7 cannot pass through the aluminum deposition mirror 13 and does not impair the backscattered electron detector for detecting the backscattered electrons 22.
【0015】また同じ検出器にて、試料7から発生した
反射電子22はアルミ蒸着ミラー13を通り越して蛍光
体あるいはシンチレータ17に照射されシンチレータ励
起光24に変換されて、反射電子用ライトガイド18を
介してフォトマルチプライヤー(光倍増管)19に伝達
され光情報が電気信号に変換される。In the same detector, the reflected electrons 22 generated from the sample 7 pass through the aluminum deposition mirror 13 and irradiate the phosphor or the scintillator 17 to be converted into scintillator excitation light 24. The optical information is transmitted to a photomultiplier (optical multiplier) 19 via the optical multiplier and converted into an electric signal.
【0016】このとき、蛍光体あるいはシンチレータ1
7内で発光したシンチレータ励起光24はアルミ蒸着ミ
ラー13を通り抜けられないためカソードルミネッセン
ス光23を検出するための光検出器へは障害を及ぼさな
い。変換された信号は信号増幅回路10から映像信号選
択回路11を通してCRT12の輝度変調端子に入力さ
れ、反射電子信号による走査像が観察できるようになっ
ている。この検出器を用いることで反射電子像とカソー
ドルミネッセンス像の切り替えを検出器の出し入れなし
に映像信号選択回路11を選択することで、両者の像を
同時に、または交互に併用して観察することができる。At this time, the phosphor or scintillator 1
Since the scintillator excitation light 24 emitted in 7 cannot pass through the aluminum deposition mirror 13, it does not affect the photodetector for detecting the cathode luminescence light 23. The converted signal is input from the signal amplifying circuit 10 to the luminance modulation terminal of the CRT 12 through the video signal selecting circuit 11, so that a scanning image based on the reflected electron signal can be observed. By using this detector, the switching between the backscattered electron image and the cathode luminescence image can be performed by selecting the video signal selection circuit 11 without taking the detector in and out, so that both images can be observed simultaneously or alternately. it can.
【0017】また、低真空雰囲気型走査電子顕微鏡にお
いても有効な検出器となるため、絶縁物や前処理するこ
とのできない試料あるいは水分や油分などを含んだ試料
のカソードルミネッセンス像観察と反射電子像観察が可
能となる。もちろんカソードルミネッセンス像と反射電
子像の切り替えを検出器の出し入れなしに映像信号選択
回路11を選択することで、両者の像を同時に、または
交互に併用して観察することができることはいうまでも
ない。In addition, since the detector becomes an effective detector even in a low vacuum atmosphere type scanning electron microscope, it is necessary to observe a cathodoluminescence image and a reflection electron image of a sample which cannot be subjected to pretreatment or an insulator or a sample containing moisture or oil. Observation becomes possible. Of course, by selecting the video signal selection circuit 11 without switching the cathodoluminescence image and the backscattered electron image without taking the detector in and out, both images can be observed simultaneously or alternately. .
【0018】また、本発明のカソードルミネッセンス光
23を検出するための光検出器と反射電子22を検出す
るための反射電子検出器とを組合わせた同一検出器は対
物レンズ下方に対して引出し,挿入が可能となる移動方
式とすることで高真空型走査電子顕微鏡時には引出すこ
とにより、通常の二次電子観察が可能となる。Further, the same detector in which the photodetector for detecting the cathodoluminescence light 23 of the present invention and the backscattered electron detector for detecting the backscattered electrons 22 are pulled out below the objective lens, By adopting a moving system that allows insertion, the secondary electron can be observed during normal high-vacuum scanning electron microscopy by pulling it out.
【0019】[0019]
【発明の効果】本発明によれば低真空雰囲気型走査電子
顕微鏡においてカソードルミネッセンス像観察装置とし
ての操作性を向上させることができ、通常の高真空型走
査電子顕微鏡の検出器としても観察可能となる。また、
反射電子像とカソードルミネッセンス像の同時または併
用観察が可能となることで反射電子像とカソードルミネ
ッセンス像の重ね合わせが容易となる。According to the present invention, the operability as a cathodoluminescence image observation apparatus can be improved in a low vacuum atmosphere type scanning electron microscope, and it can be observed as a detector of a normal high vacuum type scanning electron microscope. Become. Also,
Simultaneous or combined observation of the backscattered electron image and the cathodoluminescence image becomes possible, so that the backscattered electron image and the cathodoluminescence image can be easily superimposed.
【図1】本発明の一実施例である走査電子顕微鏡の構成
を示す概略図。FIG. 1 is a schematic diagram showing a configuration of a scanning electron microscope according to one embodiment of the present invention.
1…電子銃、2…電子ビーム、3…収束レンズ、4…対
物レンズ、5…走査電源、6…偏向コイル、7…試料、
8…二次電子検出器、9…反射電子検出器、10…信号
増幅器、11…映像信号選択回路、12…CRT、13
…アルミ蒸着ミラー、14…オプティカルファイバー、
15…分光計、16…カソードルミネッセンス像用信号
増幅回路、17…蛍光体あるいはシンチレータ、18…
反射電子検出器用ライトガイド、19…フォトマルチプ
ライヤ(光倍増管)、20…光検出用ライトガイド、2
1…遮蔽板、22…反射電子、23…カソードルミネッ
センス光、24…シンチレータ励起光。DESCRIPTION OF SYMBOLS 1 ... Electron gun, 2 ... Electron beam, 3 ... Convergent lens, 4 ... Objective lens, 5 ... Scanning power supply, 6 ... Deflection coil, 7 ... Sample,
8 secondary electron detector, 9 backscattered electron detector, 10 signal amplifier, 11 video signal selection circuit, 12 CRT, 13
… Aluminum mirror, 14… optical fiber,
15: spectrometer, 16: signal amplification circuit for cathodoluminescence image, 17: phosphor or scintillator, 18:
Light guide for backscattered electron detector, 19: photomultiplier (light multiplier), 20: light guide for light detection, 2
1 ... shielding plate, 22 ... reflected electrons, 23 ... cathodoluminescence light, 24 ... scintillator excitation light.
Claims (4)
査電子顕微鏡において、前記電子線の照射によって試料
表面から発生する反射電子と、前記電子線の照射によっ
て試料表面から発生する光を同時に検出することのでき
る検出器を有することを特徴とする走査電子顕微鏡。In a scanning electron microscope for converging and irradiating an electron beam onto a surface of a sample, reflected electrons generated from the surface of the sample by irradiation of the electron beam and light generated from the surface of the sample by irradiation of the electron beam are generated. A scanning electron microscope having a detector capable of detecting at the same time.
同一検出器としたことにより高真空型走査電子顕微鏡に
おいても低真空雰囲気型走査電子顕微鏡においても検出
器の出し入れなしに、反射電子像とカソードルミネッセ
ンス像を同時観察あるいは併用観察可能ということを特
徴とする請求項1に記載の走査電子顕微鏡。2. The detector according to claim 1, wherein the backscattered electron detector and the photodetector are the same detector, so that the detector can be used in both a high vacuum type scanning electron microscope and a low vacuum atmosphere type scanning electron microscope without taking the detector in and out. The scanning electron microscope according to claim 1, wherein an electron image and a cathodoluminescence image can be observed simultaneously or simultaneously.
は水分および油分等を含んだ試料などにおいて、前記電
子線の照射によって試料表面から発生する反射電子と前
記電子線の照射によって試料表面から発生する光を同時
に検出する観察手段を有する低真空雰囲気型走査電子顕
微鏡に使用したことを特徴とする請求項1記載の走査電
子顕微鏡。3. By using the detector, in a sample or the like containing an insulator or moisture and oil, reflected electrons generated from the sample surface by the irradiation of the electron beam and the sample surface by the irradiation of the electron beam. 2. The scanning electron microscope according to claim 1, wherein the scanning electron microscope is used in a low vacuum atmosphere type scanning electron microscope having an observation means for simultaneously detecting generated light.
対物レンズ下面より引出すことにより、高真空観察時に
前記電子線の照射によって試料表面から発生する二次電
子を他に配置した二次電子検出器により検出できるよう
に構成したことを特徴とする請求項1記載の走査電子顕
微鏡。4. The secondary detector according to claim 1, wherein said detector has a mechanism capable of being withdrawn and inserted and withdraws from the lower surface of the objective lens so that secondary electrons generated from the sample surface by irradiation of said electron beam during high vacuum observation are arranged elsewhere. 2. The scanning electron microscope according to claim 1, wherein the scanning electron microscope is configured to be detectable by an electron detector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP9256455A JPH1196956A (en) | 1997-09-22 | 1997-09-22 | Scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP9256455A JPH1196956A (en) | 1997-09-22 | 1997-09-22 | Scanning electron microscope |
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JPH1196956A true JPH1196956A (en) | 1999-04-09 |
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JP9256455A Pending JPH1196956A (en) | 1997-09-22 | 1997-09-22 | Scanning electron microscope |
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