JPH1186229A - Spin valve effect sensor - Google Patents
Spin valve effect sensorInfo
- Publication number
- JPH1186229A JPH1186229A JP25015497A JP25015497A JPH1186229A JP H1186229 A JPH1186229 A JP H1186229A JP 25015497 A JP25015497 A JP 25015497A JP 25015497 A JP25015497 A JP 25015497A JP H1186229 A JPH1186229 A JP H1186229A
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- Prior art keywords
- film
- ferromagnetic
- crystal structure
- antiferromagnetic
- spin valve
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気ディスク装置に
用いられるスピンバルブ効果センサに関する。The present invention relates to a spin valve effect sensor used for a magnetic disk drive.
【０００２】[0002]
【従来の技術】磁気的に記録されたデータを検出するた
め異方性磁気抵抗効果を用いた磁気抵抗センサを使用す
ることはよく知られている。最近では、磁気抵抗センサ
の抵抗変化が、非磁性層を介する磁性層間での伝導電子
のスピン依存性伝送、および、それに付随する層界面で
のスピン依存性散乱に帰される、より顕著な磁気抵抗効
果の利用が研究されている。この磁気抵抗効果は、「巨
大磁気抵抗効果」や「スピンバルブ効果」などの名称で
呼ばれている。このような磁気抵抗センサは異方性磁気
抵抗効果を利用する磁気抵抗センサで観察されるよりも
感度が改善されて抵抗変化が大きい。2. Description of the Related Art It is well known to use a magnetoresistive sensor utilizing the anisotropic magnetoresistance effect to detect magnetically recorded data. More recently, the change in resistance of a magnetoresistive sensor has been attributed to a more pronounced magnetoresistance attributed to spin-dependent transmission of conduction electrons between the magnetic layers through the non-magnetic layer and the associated spin-dependent scattering at the layer interface. The use of effects is being studied. This magnetoresistance effect is called by a name such as “giant magnetoresistance effect” or “spin valve effect”. Such a magnetoresistive sensor has improved sensitivity and a large resistance change as compared with a magnetoresistive sensor using the anisotropic magnetoresistive effect.
【０００３】スピンバルブ効果センサは、非磁性膜によ
って分離された第一の強磁性膜および第二の強磁性膜を
含む積層構造が適切な物質上に形成されている。強磁性
膜の一つ、例えば第二の強磁性膜の磁化方向は、外部印
加磁界ゼロで、第一の強磁性膜の磁化方向と垂直に固定
されている。第二の強磁性膜の磁化方向の固定は、反強
磁性膜を隣接させ、反強磁性膜と第二の強磁性膜との交
換結合によって行われる。そこで第二の強磁性膜は「固
定層」と呼ばれることがある。その代表的な磁化の固定
方向は浮上面と垂直方向である。一方、第一の強磁性膜
の磁化方向は外部印加磁界に応じて自由に回転でき、
「自由層」と呼ばれることがある。外部印加磁界に応じ
て自由層の磁化方向が自由に回転し、必然的に固定層の
磁化方向と自由層の磁化方向との間の角度が変化する。
スピンバルブ効果センサは、これら磁化方向の角度変化
に応じて電気抵抗が変化することを利用し、媒体からの
磁気的信号を電気的信号に変換する磁気抵抗センサであ
る。In a spin valve effect sensor, a laminated structure including a first ferromagnetic film and a second ferromagnetic film separated by a non-magnetic film is formed on a suitable material. The magnetization direction of one of the ferromagnetic films, for example, the second ferromagnetic film, is fixed perpendicular to the magnetization direction of the first ferromagnetic film with no externally applied magnetic field. The magnetization direction of the second ferromagnetic film is fixed by the exchange coupling between the antiferromagnetic film and the second ferromagnetic film with the antiferromagnetic film adjacent to the second ferromagnetic film. Therefore, the second ferromagnetic film is sometimes called a “fixed layer”. The typical magnetization fixing direction is a direction perpendicular to the air bearing surface. On the other hand, the magnetization direction of the first ferromagnetic film can be freely rotated according to the externally applied magnetic field,
Sometimes referred to as the "free layer." The magnetization direction of the free layer freely rotates according to the externally applied magnetic field, and the angle between the magnetization direction of the fixed layer and the magnetization direction of the free layer necessarily changes.
The spin valve effect sensor is a magnetoresistive sensor that converts a magnetic signal from a medium into an electric signal by using the fact that the electric resistance changes according to the change in the angle of the magnetization direction.
【０００４】バイアス磁界印加手段としての反強磁性膜
には強磁性膜と反強磁性膜との間の交換結合磁界が大き
いこと、さらに交換結合磁界が消失する温度で定義され
る「ブロッキング温度」が高いことが要求される。欧州
特許ＥＰ４９０６０８Ａ２号では、これらを満足する反
強磁性膜はＦｅＭｎ，ＮｉＭｎ系反強磁性膜であること
が開示されている。これらの反強磁性膜と強磁性ＮｉＦ
ｅ膜との間に大きな交換結合磁界、ブロッキング温度を
示す。しかし、耐蝕性が著しく低く応用上困難な点が多
い。The anti-ferromagnetic film serving as a bias magnetic field applying means has a large "exchange coupling magnetic field" between the ferromagnetic film and the anti-ferromagnetic film, and "blocking temperature" defined by a temperature at which the exchange coupling magnetic field disappears. Is required to be high. European Patent EP 490608 A2 discloses that an antiferromagnetic film satisfying these requirements is a FeMn, NiMn-based antiferromagnetic film. These antiferromagnetic films and ferromagnetic NiF
The film shows a large exchange coupling magnetic field and a blocking temperature with the e-film. However, corrosion resistance is remarkably low and there are many difficulties in application.
【０００５】そこで、耐蝕性の高い反強磁性膜としてＣ
ｒ30-70 Ｍｎ30-70 Ｐｔ3-30（原子％）が特開平９−１
６９２３号などに提案されている。このＣｒＭｎＰｔ膜
はＣｒ含有量が多いために耐蝕性が改善されており、腐
蝕電流密度を測定すると、反強磁性ＣｒＭｎＰｔ膜は１
０-4Ａ／ｍ2 であり反強磁性ＮｉＭｎ膜の１０-2Ａ／ｍ
2 と比較して極めて優れている。[0005] Therefore, as an antiferromagnetic film having high corrosion resistance, C
r 30-70 Mn 30-70 Pt 3-30 (atomic%) is disclosed in
No. 6923 and the like. Since this CrMnPt film has a high Cr content, the corrosion resistance has been improved. When the corrosion current density was measured, the antiferromagnetic CrMnPt film was found to be 1%.
0 −4 A / m 2 and 10 −2 A / m of the antiferromagnetic NiMn film.
Excellent compared to 2 .
【０００６】この反強磁性ＣｒＭｎＰｔ膜は、ｂｃｃ結
晶構造を有しているにもかかわらず、ｆｃｃ結晶構造を
有している強磁性ＮｉＦｅ膜にエピタキシャル成長して
おり、このエピタキシャル成長するときに大きな交換結
合磁界が得られる、と特開平９−１６９２３号は述べて
いる。Although this antiferromagnetic CrMnPt film has a bcc crystal structure, it is epitaxially grown on a ferromagnetic NiFe film having an fcc crystal structure. Japanese Patent Application Laid-Open No. 9-16923 states that a magnetic field can be obtained.
【０００７】[0007]
【発明が解決しようとする課題】しかし、ｂｃｃ結晶構
造を有している反強磁性膜をｆｃｃ結晶構造の強磁性膜
の上にエピタキシャル成長させることは非常に難しく、
スパッタリングの条件によっては、隣接する結晶格子に
歪みが生じて、交換結合磁界が小さくなることがあっ
た。However, it is very difficult to epitaxially grow an antiferromagnetic film having a bcc crystal structure on a ferromagnetic film having an fcc crystal structure.
Depending on the sputtering conditions, the adjacent crystal lattice may be distorted and the exchange coupling magnetic field may be reduced.
【０００８】そこで、本発明では、反強磁性ＣｒＭｎＰ
ｔ膜と隣接する強磁性膜の結晶系を同じにすることによ
り、大きな交換結合磁界が得られるスピンバルブ効果セ
ンサを提供することを目的としている。Therefore, in the present invention, antiferromagnetic CrMnP
It is an object of the present invention to provide a spin valve effect sensor capable of obtaining a large exchange coupling magnetic field by making the crystal system of a ferromagnetic film adjacent to a t film the same.
【０００９】[0009]
【課題を解決するための手段】本発明のスピンバルブ効
果センサは、強磁性膜に反強磁性膜を隣接させてその膜
間の交換結合によって前記強磁性膜の磁化方向を固定し
ているものにおいて、前記反強磁性膜がｂｃｃ結晶構造
のＣｒＭｎＰｔ膜であり、前記強磁性膜がｂｃｃ結晶構
造をしていることを特徴とするものである。A spin valve effect sensor according to the present invention has an antiferromagnetic film adjacent to a ferromagnetic film and fixes the magnetization direction of the ferromagnetic film by exchange coupling between the films. Wherein the antiferromagnetic film is a CrMnPt film having a bcc crystal structure, and the ferromagnetic film has a bcc crystal structure.
【００１０】また、前記反強磁性膜がＣｒ30-70 Ｍｎ
30-70 Ｐｔ3-30（原子％）で示される組成を有すること
が好ましい。反強磁性ＣｒＭｎＰｔ膜の組成範囲は常温
においてｂｃｃ結晶構造を有するとともに、反強磁性を
示すものとして定めてある。ここで、Ｐｔに代えてある
いはその一部をＣｕ，Ａｕ，Ｃｏ，Ｎｉあるいは白金族
の内から選択された一種以上の金属元素で置換したもの
も同様の効果が得られる。The antiferromagnetic film is made of Cr 30-70 Mn.
It preferably has a composition represented by 30-70 Pt 3-30 (atomic%). The composition range of the antiferromagnetic CrMnPt film is defined as having a bcc crystal structure at room temperature and exhibiting antiferromagnetism. Here, a similar effect can be obtained by replacing Pt or a part thereof with one or more metal elements selected from Cu, Au, Co, Ni or platinum group.
【００１１】また前記強磁性膜がＦｅＮｉＣｏ膜である
ことが好ましく、更に好ましくはＦｅ20-100Ｎｉ0-38Ｃ
ｏ80-0（原子％）で示される組成である。強磁性ＦｅＮ
ｉＣｏ膜の組成範囲は常温においてｂｃｃ結晶構造を有
するものとして定めてある。Preferably, the ferromagnetic film is a FeNiCo film, more preferably, Fe 20-100 Ni 0-38 C
o 80-0 (atomic%). Ferromagnetic FeN
The composition range of the iCo film is defined as having a bcc crystal structure at room temperature.
【００１２】スピンバルブ効果センサは、Ｃｕ等からな
る非磁性膜によって分離されて、その非磁性膜の両側面
に強磁性膜が形成されていて、これら２つの強磁性膜の
一方が反強磁性膜と積層されて固定層となっており、２
つの強磁性膜の他方が自由層となっている。本発明にお
いて、固定層となっている強磁性膜全体をｂｃｃ結晶構
造とすることもできるが、固定層を２層以上の積層構造
として、Ｃｕ等からなる非磁性膜と隣接している側を例
えばＣｏを主成分としたｆｃｃ結晶構造を持った膜とし
て、ｂｃｃ結晶構造を持った反強磁性ＣｒＭｎＰｔ膜と
隣接している部分の強磁性膜をｂｃｃ結晶構造とするこ
ともできる。In the spin valve effect sensor, a ferromagnetic film is formed on both sides of the non-magnetic film separated by a non-magnetic film made of Cu or the like. It is laminated with a film to form a fixed layer.
The other of the two ferromagnetic films is a free layer. In the present invention, the entire ferromagnetic film serving as the pinned layer may have a bcc crystal structure. However, the pinned layer has a laminated structure of two or more layers, and the side adjacent to the nonmagnetic film made of Cu or the like is used. For example, as a film having an fcc crystal structure containing Co as a main component, a portion of the ferromagnetic film adjacent to an antiferromagnetic CrMnPt film having a bcc crystal structure may have a bcc crystal structure.
【００１３】[0013]
【発明の実施の形態】図１に、本発明のスピンバルブ効
果センサの浮上面から見た拡大断面図を示す。ここで、
Ａｌ2 Ｏ3 あるいはＡｌ2 Ｏ3 −ＴｉＣなどからなる基
板１０１の上に、非磁性下地膜１０２、強磁性膜からな
る自由層１０３、Ｃｕなどからなる非磁性中間膜１０
４、強磁性膜からなる固定層１０５、反強磁性膜１０
６、非磁性保護膜１０７を順次積層した層で構成されて
いる。非磁性下地膜１０２は２〜１０ｎｍ厚のＴａ膜、
強磁性膜からなる自由層１０３は３〜１０ｎｍ厚のＦｅ
ＮｉＣｏ膜でｂｃｃ結晶構造をしている。非磁性中間膜
１０４は１．５〜５ｎｍ厚のＣｕより構成されておりｆ
ｃｃ結晶構造をしている。強磁性膜からなる固定層１０
５は１．５〜５ｎｍ厚のＦｅＮｉＣｏ膜でｂｃｃ結晶構
造をしている。反強磁性膜１０６は５〜２０ｎｍ厚のＣ
ｒＭｎＰｔ膜でｂｃｃ結晶構造をしている。非磁性保護
膜１０７はＴａである。FIG. 1 is an enlarged sectional view of a spin valve effect sensor according to the present invention as viewed from the air bearing surface. here,
On the Al 2 O 3 or Al 2 O 3 and the like -TiC substrate 101, the non-magnetic base film 102, made of the free layer 103, Cu consisting of a ferromagnetic film non-magnetic intermediate layer 10
4. Fixed layer 105 made of ferromagnetic film, antiferromagnetic film 10
6. It is composed of layers in which the non-magnetic protective film 107 is sequentially laminated. The nonmagnetic base film 102 is a Ta film having a thickness of 2 to 10 nm,
The free layer 103 made of a ferromagnetic film has a thickness of 3 to 10 nm.
The NiCo film has a bcc crystal structure. The nonmagnetic intermediate film 104 is made of 1.5 to 5 nm thick Cu.
It has a cc crystal structure. Fixed layer 10 made of a ferromagnetic film
5 is a 1.5-5 nm thick FeNiCo film having a bcc crystal structure. The antiferromagnetic film 106 has a C thickness of 5 to 20 nm.
The rMnPt film has a bcc crystal structure. The non-magnetic protective film 107 is Ta.
【００１４】これらの膜はスパッタリング法により室温
で真空中で連続的に形成した。固定層１０５のＦｅＮｉ
Ｃｏ膜をスパッタリングする際に膜に一方向の磁界を印
加して、固定層１０５の磁気モーメントを印加磁界の方
向に向けた。固定層１０５のＦｅＮｉＣｏ膜の上に、反
強磁性膜１０６のＣｒＭｎＰｔをスパッタリングするこ
とによって、ｂｃｃ結晶構造をしたＦｅＮｉＣｏ膜の上
に、ｂｃｃ結晶構造をしたＣｒＭｎＰｔ膜がエピタキシ
ャル成長し、この反強磁性膜１０６の磁気モーメントが
揃えられた。これによって、反強磁性膜１０６と強磁性
膜１０５との間で交換結合磁界が発生し、強磁性膜１０
５に一方向異方性を付与することができた。These films were continuously formed in a vacuum at room temperature by a sputtering method. FeNi of the fixed layer 105
When sputtering the Co film, a magnetic field in one direction was applied to the film, and the magnetic moment of the fixed layer 105 was directed to the direction of the applied magnetic field. By sputtering CrMnPt of the antiferromagnetic film 106 on the FeNiCo film of the fixed layer 105, a CrMnPt film of the bcc crystal structure is epitaxially grown on the FeNiCo film of the bcc crystal structure. The magnetic moments of 106 were aligned. As a result, an exchange coupling magnetic field is generated between the antiferromagnetic film 106 and the ferromagnetic film 105, and the ferromagnetic film 10
5 was able to have unidirectional anisotropy.
【００１５】比較のために、上記の強磁性ＦｅＮｉＣｏ
膜からなる固定層１０５に代えて、ｆｃｃ結晶構造をし
た強磁性ＮｉＦｅ膜を用いた以外は、上記と同様に作製
した比較例のスピンバルブ効果センサを用意した。この
比較例のスピンバルブ効果センサと、図１に示す本発明
のスピンバルブ効果センサについて、交換結合磁界の強
さを強磁性膜固定層の厚み（ｎｍ）に対する関係で、比
較して示したグラフが図２である。図２で縦軸の交換結
合磁界（Ｈｅｘ）は任意単位で示しているが、ｆｃｃ結
晶構造をした強磁性膜固定層を用いた比較例のものに比
して、ｂｃｃ結晶構造をした強磁性膜固定層を用いてい
る本発明のスピンバルブ効果センサは極めて大きな交換
結合磁界を示す。別の測定では、ｂｃｃ結晶構造の反強
磁性ＣｒＭｎＰｔ膜とｆｃｃ結晶構造をした３ｎｍ厚の
強磁性Ｃｏ90Ｆｅ10（原子％）膜との間の交換結合磁界
は約３００Ｏｅであるのに対して、同じ反強磁性膜とｂ
ｃｃ結晶構造をした３ｎｍ厚の強磁性Ｆｅ80Ｎｉ10Ｃｏ
10（原子％）膜の交換結合磁界は約４００Ｏｅであっ
た。For comparison, the above ferromagnetic FeNiCo
A spin valve effect sensor of a comparative example manufactured in the same manner as described above except that a ferromagnetic NiFe film having an fcc crystal structure was used instead of the fixed layer 105 made of a film was prepared. A graph showing a comparison between the spin valve effect sensor of this comparative example and the spin valve effect sensor of the present invention shown in FIG. 1 in relation to the thickness (nm) of the pinned layer of the ferromagnetic film. Is shown in FIG. In FIG. 2, the exchange coupling magnetic field (Hex) on the vertical axis is shown in an arbitrary unit. The spin valve effect sensor of the present invention using the film fixed layer exhibits an extremely large exchange coupling magnetic field. In another measurement, the exchange coupling magnetic field between an antiferromagnetic CrMnPt film having a bcc crystal structure and a ferromagnetic Co 90 Fe 10 (at.%) Film having a thickness of 3 nm having an fcc crystal structure is about 300 Oe. , The same antiferromagnetic film and b
3 nm thick ferromagnetic Fe 80 Ni 10 Co with cc crystal structure
The exchange coupling magnetic field of the 10 (at.%) Film was about 400 Oe.
【００１６】図３に、本発明のスピンバルブ効果センサ
の他の実施例について、浮上面から見た拡大断面図を示
している。図３で図１と同じ部分については同じ符号を
用いて示している。ここで強磁性膜自由層１１０は２層
構造をしており、非磁性下地膜１０２に隣接する層はｆ
ｃｃ結晶構造のＮｉＦｅ膜１１１であり、非磁性中間膜
１０４と隣接する層はｆｃｃ結晶構造のＣｏＦｅ膜１１
２である。また強磁性膜固定層１２０も２層構造をして
おり、非磁性中間膜１０４と隣接する層はｆｃｃ結晶構
造のＣｏＦｅ膜１２１であり、反強磁性膜１０６と隣接
する層はｂｃｃ結晶構造のＦｅＮｉＣｏ膜１２２であ
る。この構造を持ったスピンバルブ効果センサは、Ｃｕ
などの非磁性中間膜１０４を挟んでいる強磁性膜をＣｏ
合金としているので電子散乱効果が大で、磁気抵抗効果
が大きい。しかも、反強磁性膜１０６と隣接している強
磁性ＦｅＮｉＣｏ膜１２２がｂｃｃ結晶構造をしている
ので、これらの膜の間でエピタキシャル成長が起こして
いるので交換結合磁界が大きい。FIG. 3 is an enlarged sectional view of another embodiment of the spin valve effect sensor according to the present invention as viewed from the air bearing surface. In FIG. 3, the same parts as those in FIG. 1 are denoted by the same reference numerals. Here, the ferromagnetic film free layer 110 has a two-layer structure, and the layer adjacent to the nonmagnetic underlayer 102 is f
a NiFe film 111 having a cc crystal structure, and a layer adjacent to the nonmagnetic intermediate film 104 is a CoFe film 11 having an fcc crystal structure.
2. The ferromagnetic film fixed layer 120 also has a two-layer structure, a layer adjacent to the nonmagnetic intermediate film 104 is a CoFe film 121 having an fcc crystal structure, and a layer adjacent to the antiferromagnetic film 106 is having a bcc crystal structure. This is the FeNiCo film 122. A spin valve effect sensor having this structure is made of Cu
The ferromagnetic film sandwiching the non-magnetic intermediate film 104 such as
Since it is an alloy, the electron scattering effect is large and the magnetoresistance effect is large. Moreover, since the ferromagnetic FeNiCo film 122 adjacent to the antiferromagnetic film 106 has a bcc crystal structure, an epitaxial coupling occurs between these films, so that the exchange coupling magnetic field is large.
【００１７】[0017]
【発明の効果】本発明のスピンバルブ効果センサは反強
磁性膜として耐蝕性に優れたＣｒＭｎＰｔ膜を有してい
るとともに、この反強磁性膜に隣接する強磁性膜の結晶
系をＣｒＭｎＰｔ膜と同じｂｃｃ結晶構造としたことに
よって、大きな交換結合磁界が得られる。The spin valve effect sensor of the present invention has a CrMnPt film having excellent corrosion resistance as an antiferromagnetic film, and the crystal system of the ferromagnetic film adjacent to the antiferromagnetic film is a CrMnPt film. By using the same bcc crystal structure, a large exchange coupling magnetic field can be obtained.
【図１】本発明のスピンバルブ効果センサの浮上面から
見た拡大断面図である。FIG. 1 is an enlarged cross-sectional view of a spin valve effect sensor according to the present invention as viewed from an air bearing surface.
【図２】スピンバルブ効果センサの交換結合磁界の強さ
と強磁性膜固定層の関係を示す図である。FIG. 2 is a diagram showing the relationship between the strength of the exchange coupling magnetic field of the spin valve effect sensor and the ferromagnetic film fixed layer.
【図３】本発明のスピンバルブ効果センサの他の実施例
の浮上面から見た拡大断面図である。FIG. 3 is an enlarged sectional view of another embodiment of the spin valve effect sensor according to the present invention, as viewed from the air bearing surface.
１０１ 基板 １０２ 非磁性下地膜 １０３、１１０ 強磁性膜（自由層） １０４ 非磁性中間膜 １０５、１２０ 強磁性膜（固定層） １０６ 反強磁性膜 １０７ 非磁性保護膜 １１１ ＮｉＦｅ膜 １１２、１２１ ＣｏＦｅ膜 １２２ ＦｅＮｉＣｏ膜 DESCRIPTION OF SYMBOLS 101 Substrate 102 Nonmagnetic base film 103, 110 Ferromagnetic film (free layer) 104 Nonmagnetic intermediate film 105, 120 Ferromagnetic film (fixed layer) 106 Antiferromagnetic film 107 Nonmagnetic protective film 111 NiFe film 112, 121 CoFe film 122 FeNiCo film
Claims (4)
膜間の交換結合によって前記強磁性膜の磁化方向を固定
しているスピンバルブ効果センサにおいて、 前記反強磁性膜がｂｃｃ結晶構造のＣｒＭｎＰｔ膜であ
り、前記強磁性膜がｂｃｃ結晶構造をしていることを特
徴とするスピンバルブ効果センサ。1. A spin valve effect sensor in which an antiferromagnetic film is adjacent to a ferromagnetic film and the magnetization direction of the ferromagnetic film is fixed by exchange coupling between the films, wherein the antiferromagnetic film is a bcc crystal. A spin valve effect sensor comprising a CrMnPt film having a structure, wherein the ferromagnetic film has a bcc crystal structure.
Ｐｔ3-30（原子％）で示される組成を有することを特徴
とする請求項１記載のスピンバルブ効果センサ。2. The method according to claim 1, wherein the antiferromagnetic film is Cr 30-70 Mn 30-70
2. The spin valve effect sensor according to claim 1, having a composition represented by Pt 3-30 (at.%).
とを特徴とする請求項１あるいは２に記載のスピンバル
ブ効果センサ。3. The spin valve effect sensor according to claim 1, wherein the ferromagnetic film is a FeNiCo film.
0-38Ｃｏ80-0（原子％）で示される組成を有することを
特徴とする請求項３に記載のスピンバルブ効果センサ。4. The FeNiCo film is made of Fe 20-100 Ni.
Spin valve effect sensor according to claim 3, characterized in that it has a composition represented by 0-38 Co 80-0 (atomic%).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25015497A JPH1186229A (en) | 1997-09-16 | 1997-09-16 | Spin valve effect sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25015497A JPH1186229A (en) | 1997-09-16 | 1997-09-16 | Spin valve effect sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1186229A true JPH1186229A (en) | 1999-03-30 |
Family
ID=17203634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25015497A Pending JPH1186229A (en) | 1997-09-16 | 1997-09-16 | Spin valve effect sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1186229A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498707B1 (en) * | 1999-04-20 | 2002-12-24 | Seagate Technology, Llc | Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer |
| US7126797B2 (en) | 2003-02-26 | 2006-10-24 | Alps Electric Co., Ltd. | Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer |
| CN100343899C (en) * | 2004-03-11 | 2007-10-17 | 株式会社东芝 | Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus |
| CN100347748C (en) * | 2003-12-25 | 2007-11-07 | 株式会社东芝 | Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| US7525776B2 (en) | 2004-11-09 | 2009-04-28 | Kabushiki Kaisha Toshiba | Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory |
| US7821748B2 (en) | 2005-09-29 | 2010-10-26 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory |
| US8917485B2 (en) | 2006-03-27 | 2014-12-23 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element, magnetic head, and magnetic disk apparatus |
-
1997
- 1997-09-16 JP JP25015497A patent/JPH1186229A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498707B1 (en) * | 1999-04-20 | 2002-12-24 | Seagate Technology, Llc | Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer |
| US7126797B2 (en) | 2003-02-26 | 2006-10-24 | Alps Electric Co., Ltd. | Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer |
| CN100347748C (en) * | 2003-12-25 | 2007-11-07 | 株式会社东芝 | Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| US7426098B2 (en) | 2003-12-25 | 2008-09-16 | Kabushiki Kaisha Toshiba | Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| CN100343899C (en) * | 2004-03-11 | 2007-10-17 | 株式会社东芝 | Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus |
| US7525776B2 (en) | 2004-11-09 | 2009-04-28 | Kabushiki Kaisha Toshiba | Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory |
| US7821748B2 (en) | 2005-09-29 | 2010-10-26 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory |
| US8130477B2 (en) | 2005-09-29 | 2012-03-06 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory |
| US8305716B2 (en) | 2005-09-29 | 2012-11-06 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory |
| US8917485B2 (en) | 2006-03-27 | 2014-12-23 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element, magnetic head, and magnetic disk apparatus |
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