JPH1167886A - Electrostatic chuck and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate formation of the thickness of a dielectric layer, to prevent an electrode from being peeled off and to prevent thermal conductivity from deteriorating, by joining a base constituted of a specified sheet-like sintered body and the dielectric layer by interposing a prescribed porous electrode, and permitting a specified phase to exist in the pore of the electrode. SOLUTION: A base 1 is formed of the AlN sheet-like sintered body whose intergranular component is a YXAlYOZ phase. A heat generation circuit 2 porous and having the YXAlYOZ phase in the opening pore is buried in the base 1. A dielectric layer 3 constituted of the AlN sheet-like sintered body whose intergranular component is the YXAlYOZ phase is provided on one face of the base 1. Thus, the base is joined with the dielectric layer by interposing a bipolar electrode 4 which is constituted of W porous and having the YXAlYOZ phase in the opening pore. Consequently, the dielectric layer 3, the base 1 and the electrode 4 are integrated by the YXAlYOZ phase and a thick dielectric layer is easily formed. Then, the electrode is prevented from being peeled off and heat conductivity from being deteriorated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic electrostatic chuck for electrostatically holding a semiconductor wafer in a semiconductor manufacturing apparatus or the like, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as this kind of electrostatic chuck,
A dielectric layer made of Al ₂ O ₃ (alumina), CaTiO ₃ (calcium titanate), BaTiO ₃ (barium titanate) or the like joined to a base using an organic resin adhesive such as a silicone resin or a polyimide resin ( JP-A-4-
No. 287344) and an electrode mainly composed of Mo (molybdenum) and Mn (manganese) are formed on a base made of a sintered body of AlN (aluminum nitride), and the electrode is formed to a thickness of 0.001 to 1.0 mm. (Japanese Patent Application Laid-Open No. 7-326655) is known which is covered with a dielectric layer made of an AlN film by thermal CVD (chemical vapor synthesis). The former is manufactured by applying a paste-like adhesive to a base or a dielectric layer, bringing them into close contact with each other, and then drying at room temperature. In the latter case, Y ₂ powder is added to AlN powder.
After adding and mixing a sintering aid such as O ₃ (yttria), the mixture is molded and then subjected to 1600 to 195 in a non-oxidizing atmosphere.
It is fired at a temperature of 0 ° C. to obtain a base made of an AlN sintered body, and Mo, MnO (manganese oxide) and S
An electrode is formed by metallizing an alloy of iO ₂ (silica), and the electrode is formed by thermal CVD at a rate of 0.001 to 1.0.
It is manufactured by coating with a dielectric layer made of an AlN film having a thickness of mm.

[0003]

However, in the former case of the conventional electrostatic chuck, there is a problem that the use temperature is controlled by the adhesive. That is, an electrostatic chuck used in a semiconductor manufacturing apparatus or the like has a capacity of 500
It is required to be used in a high temperature range of about ° C, but if the adhesive is an organic resin, the usage limit is about 200 to 300 ° C. In the former, there is a problem that the adhesive is easily etched by a fluorine-based gas or plasma, and is eroded from the bonded portion to cause dielectric breakdown. On the other hand, in the latter case, although the former does not have the problem as in the former case, the dielectric material has a thermal CV.
Since it is formed by D, there is a problem that it takes a lot of time to form it. The thickness of the dielectric layer formed by thermal CVD is practically industrially limited to a maximum of several tens μm. When such a thin dielectric layer is used as an electrostatic chuck, the dielectric layer may not be able to withstand the applied voltage and may be broken. The applied voltage value when actually used as an electrostatic chuck is several hundred volts. On the other hand, when calculated from the withstand voltage value of AlN (30 kV or more / mm according to the measurement by the inventor), it can be seen that only about 30 V can be applied to the dielectric layer having a thickness of 0.001 mm, which is below the practical range. In the latter case, the base and the electrode have different coefficients of thermal expansion, so that the electrode is peeled off and the reliability and stability at high temperatures are lacking. Furthermore, in the latter, since the oxide layer of Mn is diffused in the base in order to increase the bonding strength of the electrode, oxygen is built in the base, which causes a problem of lowering the thermal conductivity of the base. is there. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an electrostatic chuck which facilitates formation of a thick dielectric layer, does not cause separation of electrodes, and does not cause a decrease in thermal conductivity, and a method for manufacturing the same. And

[0004]

In order to solve the above-mentioned problems, a first electrostatic chuck of the present invention has a grain boundary component of Y _x A.
The base made of a 1 _Y O _Z phase AlN plate-like sintered body and the dielectric layer are joined via a porous electrode made of W, and the Y _x Al _Y O _Z phase exists in the open pores of this electrode. It is characterized by doing. The second electrostatic chuck, in the first ones, said base being embedded W heating circuit porous consisting of (tungsten) is, _{Y x} Al Y O _Z phase within the open pores of the heating circuit It is characterized by being present. The thickness of the dielectric layer is preferably 0.01 to 1.0 mm. Further, _{Y x} Al Y O _Z phase present in said electrode, preferably has an area ratio of 5-40% in cross-section. On the other hand, the manufacturing method of the first electrostatic chuck of the present invention, the grain boundary component of _{Y x} Al Y O _Z phase dielectric layer AlN
A first paste obtained by applying a W paste for an electrode to a plate-like sintered body and adding YAG (Y ₃ Al ₅ O ₁₂ ) powder or a mixed powder of Y ₂ O ₃ and Al ₂ O ₃ to AlN powder around the electrode paste. While the paste is applied, YAG powder or Y ₂ O ₃ is applied to the base AlN plate-like sintered body having a grain boundary component of Y _x Al _Y O _Z phase.
And Al ₂ O ₃ mixed powder or a second paste plus AlN powder to the coating, then degreased both AlN plate sintered body at a temperature above 400 ° C. in an inert gas atmosphere respectively, and thereafter It is characterized in that both AlN plate-like sintered bodies are laminated so that their respective paste-applied surfaces are in contact with each other, and are heated at a temperature of 1850 ° C. or more in an inert gas atmosphere. The second method for manufacturing an electrostatic chuck includes applying a W paste for an electrode to an AlN plate-like sintered body for a dielectric layer having a grain boundary component of Y _x Al _Y O _Z phase, and applying a YAG powder on the surface and the periphery thereof. Alternatively, a mixed powder of Y ₂ O ₃ and Al ₂ O ₃ or a second paste obtained by adding an AlN powder to the mixed powder is applied, while the grain boundary component is a base Al having a Y _x Al _Y O _Z phase.
A concave portion engageable with the electrode W paste or the like is formed in the N plate-like sintered body, and then the AlN plate-like sintered body for the dielectric layer is degreased at a temperature of 400 ° C. or more in an inert gas atmosphere. Later, the two AlN plate-shaped sintered bodies are laminated so that the application portion of the electrode W paste or the like is engaged with the concave portion, and heat-treated at a temperature of 1850 ° C. or more in an inert gas atmosphere. Method for producing a third electrostatic chuck, in the first or second method, the base for AlN plate sintered body, advance, grain boundary component _{Y x} Al Y O _Z phase of AlN plate sintered One of two plate-shaped base segments consisting of a body,
While applying the W paste for the heating circuit, the first paste is applied to the periphery thereof, and the second paste is applied to the other base segment. Thereafter, both segments are heated to 400 ° C. or more in an inert gas atmosphere. It is characterized in that it is degreased at a temperature, and then both segments are laminated so that their respective paste-applied surfaces are in contact with each other, and heat-treated at a temperature of 1850 ° C. or more in an inert gas atmosphere. A fourth method for manufacturing an electrostatic chuck is the method according to the first or second method, wherein the base AlN is used.
The plate-shaped sintered body is prepared in advance by setting the grain boundary component to the A _{x Y Y} O _Z phase.
One of two plate-like base segments made of 1N sintered body is coated with the heating circuit W paste, and the second paste is coated on the surface and the periphery thereof, while the other base segment is formed with the heating circuit. A concave portion capable of engaging with the W paste or the like is formed, and then one of the segments is degreased at a temperature of 400 ° C. or more in an inert gas atmosphere. And heat-treated at a temperature of 1850 ° C. or more in an inert gas atmosphere.

The Y _x Al _Y O _Z phase is composed of YAG (Y ₃ Al ₅
It is preferably an O ₁₂ ) phase, whereby there is no diffusion of oxygen in the base and the dielectric layer, and no decrease in thermal conductivity is observed. _{Y x} Al Y O _Z phase in the electrode is integrated with the _{Y x} Al Y O _Z phase of the base and the dielectric layer, three parties are strongly bonded. The W of the AlN and the electrodes of the base and the dielectric layer, the thermal expansion coefficient of the approximation (AlN (manufactured by Toshiba ^{Ceramics): 4.5 × 10 -6 /℃,W:4.4×10 -6} /
℃) and does not cause chemical reaction or diffusion.
Further, the electrode may be of a bipolar type or a monopolar type.

[0006] _{Y x} Al Y O _Z phase within heating circuit is integrated with the _{Y x} Al Y O _Z phase of both base segment, three parties are strongly bonded. Further, AlN of both base segments and W of the heating circuit have similar thermal expansion coefficients as described above, and do not cause chemical reaction or diffusion.

When the thickness of the dielectric layer is less than 0.01 mm, a practical voltage cannot be applied, and when it exceeds 1.0 mm, the electrostatic attraction force decreases. The preferred thickness of the dielectric layer is 0.1 to 0.8 mm. Further, the dielectric layer may be provided with a recess for accommodating the semiconductor wafer. In this case, the thickness of the dielectric layer is a portion where the concave portion is formed.

When the area ratio in the cross section of the Y _x Al _Y O _Z phase existing in the electrode is less than 5%, the bonding strength of the base, the electrode and the dielectric layer is reduced, and when it exceeds 40%. And does not function as an electrode for an electrostatic chuck. Area ratio in the cross section of the preferred _{Y x} Al Y O _Z phase 10
30%.

The AlN plate-like sintered body for the dielectric layer and the base is
The paste application surface, which is the bonding surface, is Ra = 0.2-1.
It is preferable to process in advance so that 0 μm and R _max = 2 to 8 μm. Ra <0.2 μm, R _max <2 μ
In the case of m, while the electrode or the heating circuit is peeled off,
When Ra> 1 μm and _Rmax > 8 μm, there is a problem in the formation of the electrodes or the heating circuit. The application of the W paste and the first paste to the AlN plate-like sintered body for the dielectric layer is preferably performed by screen printing. The first paste is 60 to 95 wt% (preferably 75 to 85 wt%) AlN powder having a particle size of 1 to 10 µm (preferably 1 to 2.9 µm).
%) In YAG powder or Y ₂ O ₃ having a particle size of 0.1 to 50 μm.
And a mixed powder of Al ₂ O ₃ and 5-40 wt%, and a solvent (for example, butyl carbitol, thermoplastic cellulose ether and dibutyl phthalate) is added thereto. Note that the first paste has a YA such that the heat shrinkage in the thickness direction of the W paste is equal to that of the W paste.
G powder and the like are mixed with AlN powder, and the respective particle sizes are selected so that both powders are uniformly dispersed.

The second paste is a YAG powder having a particle size of 0.1 to 50 μm or a mixed powder 7 of Y ₂ O ₃ and Al ₂ O _3.
Particle size 1-10 μm (preferably 1-100%)
(2.9 μm) AlN powder of 0 to 30 wt% is added and mixed, and the same solvent as in the first paste is added thereto. The application of the second paste to the base AlN plate-shaped sintered body may be any of screen printing, brush coating, spraying, and the like.

If the degreasing temperature is lower than 400 ° C., the volatilization of the organic substances in the paste is insufficient, which has an adverse effect on the heat treatment in the next step, leading to a decrease in bonding strength.
When the heat treatment temperature is lower than 1850 ° C., for example, 1750 ° C., the Y _x Al _Y O _Z component does not dissolve and the bonding is not performed well. The upper limit is the temperature before AlN abnormally grows or sublimates. At the time of the heat treatment, it is preferable to press the laminate at 6.5 g / cm ² or more.
If the pressure is less than 6.5 g / cm ² , high-strength bonding cannot be expected.

The recesses engageable with the W paste for the electrode or the W paste for the heat generating circuit or the like on the AlN plate-like sintered body for the base or the base segment may be formed after firing. Time is desirable.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a conceptual diagram of a main part showing a first embodiment of an electrostatic chuck according to the present invention.
The base having a thickness of approximately 5mm for drawing 1 6 inch the grain boundary component made of AlN plate sintered body of _{Y x} Al Y O _Z phase, this base 1, the porous thickness of about 20μm consisting of W Heating circuit 2 has two base segments 1a,
It is buried by being interposed between 1b. The open pores (not shown) of the heat generating circuit 2 contain a Y _x Al _Y O _Z phase, and the Y _x Al
Area ratio in a cross section of _Y O _Z phase is 5 to 40%. On one surface of the base 1 (the upper surface in FIG. 1), a dielectric layer 3 having a thickness of about 300 μm and made of an AlN plate-like sintered body having a grain boundary component of a Y _x Al _Y O _Z phase,
It is joined with a porous bipolar electrode 4 having a thickness of about 20 μm. The open pores of the bipolar electrode 4 (not shown), _{Y x} Al Y O and _Z phases are present, the area ratio in a cross section of Y _x Al _Y O _Z phase present in the electrode 4 are fever 5% to 40% as in the case of the circuit 2. In the figure, reference numeral 5 denotes a filling joint layer for preventing a gap from being formed around the heat generating circuit 2 or the bipolar electrode 4;
Is obtained by firing YAG powder or a mixture of Y ₂ O ₃ and Al ₂ O ₃ mixed with AlN powder as a filler. 6 is a base segment 1 forming the base 1
a, 1b and a bonding layer for bonding the base 1 and the dielectric layer 3. The bonding layer 6 is made of YAG powder, a mixed powder of Y ₂ O ₃ and Al ₂ O ₃ , or a powder obtained by adding AlN powder thereto. Fired.

In order to manufacture the electrostatic chuck having the above structure,
First, a sintering aid Y ₂ O ₃ , an organic binder (PVB) and an organic solvent (methanol) are added to AlN powder in an appropriate amount so that the grain boundary component of the AlN sintered body becomes a YAG phase, and the mixture is added in a ball mill. After mixing for 24 hours, the resulting slurry was granulated using a spray drier. Next, the granulated powder is pressed (0.3 ton / cm ² ) with a uniaxial die press, and then pressed (1 ton / cm ² ) with a hydrostatic press to form a ² inch for a 6-inch electrostatic chuck. Plate-like molded bodies having thicknesses of 10 mm, 5 mm and 5 mm to be used as the base segments 1 a and 1 b and the dielectric layer 3 were obtained. Next, each compact was placed in an air atmosphere for 40 minutes.
After degreasing at a temperature of 0 ° C. or more (for example, 600 ° C.), in a nitrogen gas atmosphere, 1850 ° C. or more (for example, 1900 ° C.)
C.) for 3 hours to obtain two base segments and an AlN plate-like sintered body for a dielectric layer. Then, a grinding process is performed on each joint surface, and Ra = 0.2 to 1.
0 μm (for example, Ra = 0.65 μm), R _max = 2 to 8
μm (for example, R _max = 5.25 μm).
In addition, when the sintered body was pulverized and the grain boundaries were identified by powder X-ray diffraction, YAG was detected.

Next, a W paste for a heat generating circuit is screen-printed on one (lower in FIG. 1) base segment joining surface to a thickness of 20 μm after a heat treatment described later.
The first paste was applied by screen printing on the periphery thereof so that the thickness after the heat treatment was equivalent to the thickness of the heat generating circuit. The first paste becomes the filling bonding layer 5 after the heat treatment, and has a particle diameter of 1 to 1.
AlN powder 6 of 10 μm (preferably 1 to 2.9 μm)
The particle size is 0 to 95 wt% (preferably 75 to 85 wt%).
YAG powder of 1 to 50 μm or 5 to 40% by weight of a mixed powder of Y ₂ O ₃ and Al ₂ O ₃ is added and mixed, and a solvent composed of butyl carbitol, thermoplastic cellulose ether and dibutyl phthalate is added thereto. It was prepared. The heat shrinkage in the thickness direction of the heating circuit W paste is 58% as shown in FIG. 2. Therefore, in order to make this heat shrinkage equal to the heat shrinkage of the first paste,
The mixing ratio of the AlN powder and the YAG powder in the first paste must be 8: 2. If the proportion of the YAG powder or the like is large, the heat shrinkage ratio or the like of the first paste becomes larger than that of the W paste, and the hermeticity as an electrostatic chuck cannot be obtained. Has a smaller heat shrinkage than that of the W paste, a gap is formed between the heating circuit and the other (upper in FIG. 1) base segment, and the bonding strength is reduced. On the other hand, the second paste was applied to the joint surface of the other (upper in FIG. 1) base segment by screen printing, brush coating, spraying, or the like. The second paste becomes the bonding layer 6 after the heat treatment, and has a particle size of 0.1 to 50 μm.
AG powder or mixed powder 70 of Y ₂ O ₃ and Al ₂ O ₃
The particle size is 1 to 10 μm (preferably 1 to 2.
The mixture was prepared by adding and mixing 0 to 30 wt% of AlN powder (9 μm) and adding the same solvent as the first paste. The second paste is preferably made of YAG powder or a mixed powder of Y ₂ O ₃ and Al ₂ O ₃ at 100% by weight. By doing so, there is almost no gap at the interface between AlN and W, Increase. If the compounding ratio of YAG powder or the like and AlN powder is 2: 8 as in the first paste, pores are frequently formed at the interface between AlN and W, so it is preferable that the ratio be 7: 3 at the maximum. Next, both base segments are each degreased at a temperature of 400 ° C. or more (for example, 600 ° C.) in a nitrogen gas atmosphere, and then both base segments are laminated so that their paste-coated surfaces are in contact with each other. pressurized at not less than ² cm ² (for example, 7.0 g / cm ² ) and heat-treated in a nitrogen gas atmosphere at a temperature of not less than 1850 ° C. (for example, 1900 ° C.) for 3 hours to form an AlN plate for a base in which a heat generating circuit is embedded. A sintered body was obtained.

Next, on the bonding surface of the AlN sintered body for the dielectric layer,
The electrode paste W is applied by screen printing to a thickness such that the thickness after the heat treatment described later becomes 20 μm, and the thickness after the heat treatment of the first paste by the screen print is equivalent to that of the bipolar electrode. It was applied to a thickness. On the other hand, the second bonding surface of the base AlN plate-shaped sintered body is screen-printed, brush-coated, sprayed, or the like.
The paste was applied. Note that the W paste for the electrode, the first paste, and the second paste are the same as the W paste, the first paste, and the second paste for the heat generating circuit used for manufacturing the base, and thus description thereof will be omitted. Next, the two AlN plate-like sintered bodies were each subjected to a nitrogen gas atmosphere for 4 hours.
After degreasing at a temperature of 00 ° C. or more (for example, 600 ° C.), both AlN plate-shaped sintered bodies are laminated so that their paste-applied surfaces are in contact with each other, and the laminated body is 6.5 g / cm ² or more (for example, 7. 0 g / cm ² ), and heat-treated in a nitrogen gas atmosphere at a temperature of 1850 ° C. or more (eg, 1900 ° C.) for 3 hours, and then subjected to grinding to obtain a dielectric layer thickness of 300 μm, Ra = 0.1 μm, An electrostatic chuck with a total thickness of 5 mm was obtained (one base segment 3.7 m)
m, the other base segment 1 mm).

The obtained electrostatic chuck is placed under reduced pressure at 500 ° C.
When the appearance was observed by heating at a temperature of, AlN plate-like sintered bodies for dielectric layers and bases were prepared in the same manner as in the first embodiment. Ag paste for electrodes is applied to the joint surface by screen printing,
After drying and baking, a polyimide resin is applied by screen printing to the joint surface of the base AlN plate-shaped sintered body, and then both AlN plate-shaped sintered bodies are brought into close contact with each other and heated at a temperature of 250 ° C. to be bonded. Table 1 also shows the case of the conventional electrostatic chuck having a thickness of 5 mm. The electrostatic chuck according to the present invention has no problem in appearance, but in the conventional electrostatic chuck, the color tone of the polyimide resin is changed to black and the foam is in the form of a foam.

[0018]

[Table 1]

Further, under reduced pressure of the electrostatic chuck according to the present invention,
When the electrostatic attraction force at room temperature was measured, the results were as shown in Table 2, showing sufficient performance.

[0020]

[Table 2]

FIG. 3 is a conceptual diagram of a main part showing a second embodiment of the electrostatic chuck according to the present invention. The electrostatic chuck according to the first embodiment prevents a gap from being generated around the heating circuit 2 formed on the other base segment 1 b of the base 1 and the bipolar electrode 4 formed on the dielectric layer 3. Therefore, while the filling bonding layer 5 is formed around the heating circuit 2 and the bipolar electrode 4, a concave portion 7 that engages with the heating circuit 2 and the like is formed in one base segment 1 a of the base 1. A recess 8 is formed in the other base segment 1a of the base 1 to engage with the bipolar electrode 4 and the like. The heating circuit 2 and the bipolar electrode 4 are engaged with the recesses 7 and 8, respectively. The segments 1a and 1b and the base 1 and the dielectric layer 3 are joined by a joining layer 6 interposed therebetween. The other configuration is almost the same as that of the first embodiment. Therefore, the same components and the like are denoted by the same reference numerals and description thereof is omitted.

In order to manufacture the electrostatic chuck having the above structure,
After obtaining two base segments and an AlN plate-like sintered body for a dielectric layer in the same manner as in the first embodiment, a concave portion is formed in one of the base segments to engage with a heat generating circuit or the like. The other base segment was formed with a recess for engaging with a bipolar electrode or the like. The two concave portions may be formed at the time of molding the molded body. Next, the W paste for the heating circuit is applied to the other base segment by screen printing or the like, while the W paste for the electrode is applied to the AlN plate-like sintered body for the dielectric layer by screen printing or the like, and after drying both pastes, The second paste was applied to the surface and periphery of the heating circuit W paste and the surface and periphery of the electrode W paste by screen printing or the like. Next, after the other base segment and the AlN plate-like sintered body for the dielectric layer are degreased in the same manner as in the first embodiment, the application portion of the heating circuit W paste or the like is formed with the concave portion of one base segment. ,
Further, both base segments and the AlN plate-like sintered body for the dielectric layer are laminated so that the application portion of the electrode W paste or the like is engaged with the concave portion of the other base segment, and is the same as that of the first embodiment. To obtain an electrostatic chuck. The obtained electrostatic chuck showed the same performance as that of the first embodiment.

In each of the above embodiments,
Although the case where the heating circuit is embedded in the base has been described,
The present invention is not limited to this, and may not have a heating circuit. Further, the electrode is not limited to the bipolar type, but may be a monopolar type. Further, the present invention is not limited to the case where the filling bonding layer made of the first paste is formed around both the electrode and the heat generating circuit, or the case where the filling bonding layer is engaged with the concave portion without forming the filling bonding layer. And the other may be engaged with the recess.

[0024]

As described above, according to the first electrostatic chuck and the first and second manufacturing methods of the present invention, the dielectric layer is made of an AlN plate-like sintered body, Since the base and the electrode are integrated by the Y _x Al _Y O _Z phase and the oxygen contained in the base and the like is reduced, it is easy to form a thick dielectric layer and peel off the electrode. It does not occur and does not cause a decrease in thermal conductivity. or,
According to the second electrostatic chuck and the third and fourth manufacturing methods thereof, in addition to the functions and effects of the first electrostatic chuck and the first and second manufacturing methods, the three components of the base segment and the heating circuit are provided. since There are integrated by _{Y x} Al Y O _Z phase, separation of the heating circuit does not occur.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of a main part showing a first embodiment of an electrostatic chuck according to the present invention.

FIG. 2 is an explanatory diagram showing the thermal shrinkage in the thickness direction of a W paste and a first paste used for manufacturing the electrostatic chuck of FIG.

FIG. 3 is a conceptual diagram of a main part showing a second embodiment of the electrostatic chuck according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Base 1a Base segment 1b Base segment 2 Heating circuit 3 Dielectric layer 4 Bipolar electrode 5 Filling bonding layer 6 Bonding layer 7 Depression 8 Depression

Claims (8)

[Claims] 1. A base composed of an AlN plate-like sintered body having a grain boundary component of a Y _x Al _Y O _Z phase and a dielectric layer are joined via a porous electrode composed of W, and open pores of the electrode are provided. Within Y _x
An electrostatic chuck, wherein the Al _Y O _Z phase is present. 2. A porous heating circuit made of W is buried in the base, and Y _x Al _Y O is formed in an open hole of the heating circuit.
_2. The electrostatic chuck according to claim 1, wherein a _Z phase is present. 3. The thickness of the dielectric layer is 0.01 to 1.0 mm.
The electrostatic chuck according to claim 1, wherein: 4. The electrostatic chuck according to claim 1, wherein the Y _x Al _Y O _Z phase present in the electrode has an area ratio of 5 to 40% in a cross section. 5. A W paste for an electrode is applied to an AlN plate-like sintered body for a dielectric layer having a grain boundary component of a Y _x Al _Y O _Z phase, and a YAG powder or a Y ₂ O ₃ A first paste to which a mixed powder of Al ₂ O ₃ and Al ₂ O ₃ is added is applied, and a YAG powder or Y ₂ O ₃ and Al are added to a base AlN sintered body having a Y _x Al _Y O _Z phase grain boundary component. ₂ O ₃
Or a second paste obtained by adding an AlN powder to the mixed powder, and thereafter, both AlN plate-shaped sintered bodies are degreased at a temperature of 400 ° C. or more in an inert gas atmosphere. A method for manufacturing an electrostatic chuck, comprising: laminating a combined body so that respective paste-applied surfaces are in contact with each other, and performing heat treatment at a temperature of 1850 ° C. or more in an inert gas atmosphere. 6. A W paste for an electrode is applied to an AlN plate-like sintered body for a dielectric layer having a Y _x Al _Y O _Z phase in a grain boundary component, and YAG powder or Y ₂ O ₃ is coated on the surface and the periphery thereof. While a mixed powder of Al ₂ O ₃ or a second paste obtained by adding AlN powder to the mixed powder is applied, the grain boundary component is Y _x Al _Y O _Z
A concave portion engageable with the electrode W paste or the like is formed in the AlN plate-like sintered body for the base of the phase, and then the dielectric layer AlN is formed.
The plate-like sintered body was degreased at a temperature of 400 ° C. or more in an inert gas atmosphere, and then both AlN plate-like sintered bodies were laminated so that the coated portion of the electrode W paste or the like engaged with the concave portion. A method for manufacturing an electrostatic chuck, comprising performing heat treatment at a temperature of 1850 ° C. or more in an active gas atmosphere. Wherein said base for AlN plate sintered body in advance, one grain boundary component of the two base segment of _{Y x} Al Y O _Z of AlN plate sintered body phase plate, The W paste for the heating circuit is applied, and the first
While the paste is applied, the second paste is applied to the other base segment, and then both segments are degreased at a temperature of 400 ° C. or more in an inert gas atmosphere. 7. The method for manufacturing an electrostatic chuck according to claim 5, wherein the layers are laminated so as to be in contact with each other and heated at a temperature of 1850 [deg.] C. or more in an inert gas atmosphere. 8. A heating circuit is provided in which the base AlN plate-shaped sintered body is previously provided with one of two plate-shaped base segments made of an AlN sintered body having a grain boundary component of a Y _x Al _Y O _Z phase. While applying the second paste on the surface and the periphery thereof, and forming a concave portion capable of engaging with the heating circuit W paste and the like on the other base segment. Degreasing at a temperature of 400 ° C. or more in an inert gas atmosphere, and then laminating both segments so that a coating portion of a heating circuit paste or the like is engaged with the concave portion, and heating at a temperature of 1850 ° C. or more in an inert gas atmosphere The method according to claim 5, wherein the electrostatic chuck is processed.