JPH1163361A - Exhaust piping device - Google Patents
Exhaust piping deviceInfo
- Publication number
- JPH1163361A JPH1163361A JP9238850A JP23885097A JPH1163361A JP H1163361 A JPH1163361 A JP H1163361A JP 9238850 A JP9238850 A JP 9238850A JP 23885097 A JP23885097 A JP 23885097A JP H1163361 A JPH1163361 A JP H1163361A
- Authority
- JP
- Japan
- Prior art keywords
- branch pipe
- pipe
- exhaust pipe
- gate valve
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
- F16L53/30—Heating of pipes or pipe systems
- F16L53/35—Ohmic-resistance heating
- F16L53/38—Ohmic-resistance heating using elongate electric heating elements, e.g. wires or ribbons
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は排気配管装置、特に
排気ガス中に固化成分が含まれている場合の排気配管装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust piping device, and more particularly to an exhaust piping device in a case where solidified components are contained in exhaust gas.
【0002】[0002]
【従来の技術】各種処理装置から排気される排気ガス中
には、排気中に固化する固化成分が含まれることがあ
り、特に半導体製造装置等、パーティクルの発生を問題
とする装置では、配管途中で固化するのを防止する必要
がある。2. Description of the Related Art Exhaust gas exhausted from various types of processing equipment may contain solidified components that solidify in the exhaust gas. It is necessary to prevent solidification.
【0003】排気ガス中に固化成分を含む処理装置とし
て、半導体製造装置がある。Si3N4 膜を生成する半
導体製造装置では、排気ガス中に反応副生成物としてN
H4Clが含まれ、該NH4 Clは固化温度が高く、常
温では固体となる。NH4 Clが反応室内に逆流した場
合はパーティクルとしてウェーハに付着しウェーハの処
理品質、信頼性、歩留まりを低下させる。[0003] As a processing apparatus containing a solidified component in exhaust gas, there is a semiconductor manufacturing apparatus. In a semiconductor manufacturing apparatus for producing a Si 3 N 4 film, N 2 is contained in exhaust gas as a reaction by-product.
H 4 Cl is contained, and the NH 4 Cl has a high solidification temperature and becomes solid at room temperature. When NH 4 Cl flows back into the reaction chamber, the NH 4 Cl adheres to the wafer as particles and reduces the processing quality, reliability, and yield of the wafer.
【0004】従って従来より、排気配管を加熱して反応
副生成物が配管に付着、固化しない様にしている。Therefore, conventionally, the exhaust pipe is heated so that the reaction by-product does not adhere to the pipe and solidify.
【0005】図2に於いて、従来の半導体製造装置の排
気配管装置について説明する。Referring to FIG. 2, a description will be given of a conventional exhaust piping device of a semiconductor manufacturing apparatus.
【0006】図示しないヒータの内部には、上端が閉塞
し下端が開放された筒状の外部反応管1が設けられ、該
外部反応管1の内部には、上端が開放された内部反応管
2が前記外部反応管1と同心状に配設され、前記外部反
応管1、内部反応管2は下端を炉口フランジ3に支持さ
れ、前記外部反応管1と前記炉口フランジ3間はOリン
グ5によりシールされ、前記内部反応管2により反応室
4が画成される。前記炉口フランジ3の下端開口部はシ
ールキャップ6により気密に閉塞され、該シールキャッ
プ6は図示しないボートエレベータにより昇降され、前
記炉口フランジ3の下端開口部を開閉する。前記シール
キャップ6には図示しないボートが立設され、該ボート
には水平姿勢でウェーハが多段に装填される。前記炉口
フランジ3の下部に反応ガス導入管(図示せず)が前記
内部反応管2内部に連通する様接続されている。A cylindrical external reaction tube 1 having an upper end closed and an open lower end is provided inside a heater (not shown). Inside the outer reaction tube 1, an internal reaction tube 2 having an open upper end is provided. Are disposed concentrically with the external reaction tube 1, and the lower ends of the outer reaction tube 1 and the inner reaction tube 2 are supported by a furnace port flange 3. An O-ring is provided between the outer reaction tube 1 and the furnace port flange 3. 5 and a reaction chamber 4 is defined by the internal reaction tube 2. The lower end opening of the furnace port flange 3 is hermetically closed by a seal cap 6, and the seal cap 6 is moved up and down by a boat elevator (not shown) to open and close the lower end opening of the furnace port flange 3. A boat (not shown) is erected on the seal cap 6, and wafers are loaded in multiple stages in a horizontal posture. A reaction gas introduction pipe (not shown) is connected to a lower portion of the furnace port flange 3 so as to communicate with the inside of the internal reaction pipe 2.
【0007】主排気管7は、前記外部反応管1と内部反
応管2との間に形成される円筒状の空間8下端に連通す
る様、前記炉口フランジ3に接続されている。該主排気
管7には主排気弁9が設けられ、副排気管10が前記主
排気管7の前記主排気弁9上流側と該主排気弁9下流側
に掛渡って連通され、前記副排気管10には副排気弁1
1が設けられている。The main exhaust pipe 7 is connected to the furnace port flange 3 so as to communicate with a lower end of a cylindrical space 8 formed between the external reaction pipe 1 and the internal reaction pipe 2. The main exhaust pipe 7 is provided with a main exhaust valve 9, and a sub exhaust pipe 10 is communicated with the upstream side of the main exhaust pipe 7 and the downstream side of the main exhaust valve 9. The exhaust pipe 10 has a sub exhaust valve 1
1 is provided.
【0008】前記主排気管7には、前記副排気管10の
前記主排気管7との接続部上流に第1分岐管12及び第
2分岐管13が接続されている。前記第1分岐管12に
は第1仕切弁14が設けられ、前記第1分岐管12には
バラトロン15が設けられている。又、前記第2分岐管
13にはピラニゲージ16が設けられている。[0008] A first branch pipe 12 and a second branch pipe 13 are connected to the main exhaust pipe 7 upstream of a connection between the sub exhaust pipe 10 and the main exhaust pipe 7. The first branch pipe 12 is provided with a first gate valve 14, and the first branch pipe 12 is provided with a baratron 15. The second branch pipe 13 is provided with a Pirani gauge 16.
【0009】前記炉口フランジ3への前記主排気管7の
接続部から前記主排気弁9迄の前記主排気管7の外周に
は、主排気管加熱ヒータ17が巻設され、前記副排気弁
11迄の前記副排気管10の外周には副排気管加熱ヒー
タ18が巻設され、前記第1分岐管12及び第1仕切弁
14の外周には、第1分岐管加熱ヒータ19が前記バラ
トロン15に至る迄巻設され、前記第2分岐管13の外
周には、第2分岐管加熱ヒータ20が前記ピラニゲージ
16に至る迄巻設されている。A main exhaust pipe heater 17 is wound around an outer periphery of the main exhaust pipe 7 from a connection portion of the main exhaust pipe 7 to the furnace port flange 3 to the main exhaust valve 9, and the sub exhaust is provided. A sub-exhaust pipe heater 18 is wound around the outer circumference of the sub-exhaust pipe 10 up to the valve 11, and a first branch pipe heater 19 is provided on the outer circumference of the first branch pipe 12 and the first gate valve 14. A second branch pipe heater 20 is wound around the outer circumference of the second branch pipe 13 until it reaches the Pirani gauge 16.
【0010】前記ボートエレベータ(図示せず)により
前記シールキャップ6を介して前記ボート(図示せず)
を下降させ、該ボートにウェーハを装填し、装填後、前
記ボートエレベータにより前記ボートを前記内部反応管
2内に装入する。前記シールキャップ6により前記炉口
フランジ3の下端を完全に密閉した後、前記排気弁9を
閉塞した状態で、前記副排気弁11を開放し、前記副排
気管10を介し、穏やかに前記反応室4内を排気する。
前記反応室4内が所要の圧力迄低下すると、前記副排気
弁11を閉塞し、前記主排気弁9及び前記第1仕切弁1
4を開放し、前記主排気管7を介し前記反応室4内を排
気すると共に前記ヒータ(図示せず)に常時通電し、前
記反応室4内を加熱する。前記ピラニゲージ16により
前記反応室4内の圧力を計測しつつ、該反応室4内を真
空引する。[0010] The boat (not shown) is moved by the boat elevator (not shown) through the seal cap 6.
And the boat is loaded with wafers. After loading, the boat is loaded into the internal reaction tube 2 by the boat elevator. After the lower end of the furnace port flange 3 is completely sealed by the seal cap 6, the auxiliary exhaust valve 11 is opened with the exhaust valve 9 closed, and the reaction is gently performed through the auxiliary exhaust pipe 10. The inside of the chamber 4 is evacuated.
When the pressure inside the reaction chamber 4 drops to a required pressure, the sub exhaust valve 11 is closed, and the main exhaust valve 9 and the first gate valve 1 are closed.
4 is opened, the inside of the reaction chamber 4 is exhausted through the main exhaust pipe 7, and the heater (not shown) is always energized to heat the inside of the reaction chamber 4. The inside of the reaction chamber 4 is evacuated while measuring the pressure in the reaction chamber 4 by the Pirani gauge 16.
【0011】所定の圧力迄真空引されると、反応ガスを
導入してウェーハ表面に成膜する等所定の処理を行う。
反応後の反応副生成物を含んだ排気ガスは、前記主排気
管加熱ヒータ17、副排気管加熱ヒータ18、第1分岐
管加熱ヒータ19、及び第2分岐管加熱ヒータ20に通
電し、前記主排気管7、前記副排気管10、前記第1分
岐管12、前記第2分岐管13を反応副生成物固化温度
以上に加熱した状態で、前記主排気管7を経て排気され
る。When the vacuum is evacuated to a predetermined pressure, a predetermined process such as introducing a reaction gas to form a film on the wafer surface is performed.
The exhaust gas containing the reaction by-product after the reaction is passed through the main exhaust pipe heater 17, the sub exhaust pipe heater 18, the first branch pipe heater 19, and the second branch pipe heater 20, and The main exhaust pipe 7, the sub-exhaust pipe 10, the first branch pipe 12, and the second branch pipe 13 are exhausted through the main exhaust pipe 7 in a state where the main exhaust pipe 7, the second branch pipe 13, and the second branch pipe 13 are heated to a reaction by-product solidification temperature or higher.
【0012】処理が完了すると、反応ガスの導入を停止
し、前記反応室4内に窒素ガス等の不活性ガスを導入
し、ガスパージし、前記バラトロン15により前記反応
室4内の圧力を計測しつつ、前記反応室4内を常圧に復
帰する。その後前記シールキャップ6を開放し、前記ボ
ートエレベータ(図示せず)により前記ボート(図示せ
ず)が引出される。When the treatment is completed, the introduction of the reaction gas is stopped, an inert gas such as nitrogen gas is introduced into the reaction chamber 4, the gas is purged, and the pressure in the reaction chamber 4 is measured by the baratron 15. Meanwhile, the inside of the reaction chamber 4 is returned to normal pressure. Thereafter, the seal cap 6 is opened, and the boat (not shown) is pulled out by the boat elevator (not shown).
【0013】[0013]
【発明が解決しようとする課題】上記従来のものでは、
前記第2分岐管加熱ヒータ20により前記第2分岐管1
3が、前記ピラニゲージ16直前迄加熱されている為、
前記ピラニゲージ16へも熱が伝達し、該ピラニゲージ
16が加熱される。該ピラニゲージ16には圧力の測定
対象である気体以外から熱が伝達されると、正確な測定
値を示さなくなるという特性がある為、前記反応室4を
真空引する際、前記ピラニゲージ16が加熱されると、
前記反応室4の圧力制御を精度良く行うことができない
という問題があった。SUMMARY OF THE INVENTION In the above prior art,
The second branch pipe 1 is heated by the second branch pipe heater 20.
3 is heated up to just before the Pirani gauge 16,
Heat is also transmitted to the Pirani gauge 16, and the Pirani gauge 16 is heated. The Pirani gauge 16 has a characteristic that when heat is transmitted from a gas other than the gas whose pressure is to be measured, the measured value is not accurate. Therefore, when the reaction chamber 4 is evacuated, the Pirani gauge 16 is heated. Then
There is a problem that the pressure control of the reaction chamber 4 cannot be performed with high accuracy.
【0014】本発明は斯かる実情に鑑み、排気配管装置
に於いて、測定対象である気体以外からセンサへ熱が伝
達されるのを防止し、精度の良い測定を行おうとするも
のである。In view of such circumstances, the present invention is intended to prevent heat from being transmitted from a gas other than the gas to be measured to a sensor in an exhaust piping device, and to perform accurate measurement.
【0015】[0015]
【課題を解決するための手段】本発明は、排気管を加熱
する排気配管装置に於いて、排気管に分岐管を介してセ
ンサを設け、前記分岐管途中に仕切弁を設けると共に前
記分岐管の仕切弁より上流側にヒータを設けた排気配管
装置に係り、ヒータからセンサへ熱が伝達されるのを防
止する。SUMMARY OF THE INVENTION The present invention relates to an exhaust pipe system for heating an exhaust pipe, wherein a sensor is provided on the exhaust pipe via a branch pipe, a gate valve is provided in the middle of the branch pipe, and the branch pipe is provided. The present invention relates to an exhaust piping device provided with a heater upstream of the gate valve to prevent heat from being transmitted from the heater to the sensor.
【0016】[0016]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態を説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0017】尚、図1中、図2中で示したものと同様の
機能を有するものには同符号を示してある。In FIG. 1, components having the same functions as those shown in FIG. 2 are denoted by the same reference numerals.
【0018】図示しないヒータの内部には、上端が閉塞
し下端が開放された筒状の外部反応管1が設けられ、該
外部反応管1の内部には、上端が開放された内部反応管
2が前記外部反応管1と同心状に配設され、前記外部反
応管1、内部反応管2は下端を炉口フランジ3に支持さ
れ、前記外部反応管1と前記炉口フランジ3間はOリン
グ5によりシールされ、前記内部反応管2により反応室
4が画成される。前記炉口フランジ3の下端開口部はシ
ールキャップ6によって気密に閉塞され、該シールキャ
ップ6は図示しないボートエレベータによって昇降さ
れ、前記炉口フランジ3の下端開口部を開閉する。前記
シールキャップ6には図示しないボートが立設され、該
ボートには水平姿勢でウェーハが多段に装填される。前
記炉口フランジ3の下部に反応ガス導入管(図示せず)
が前記内部反応管2内部に連通する様接続されている。Inside the heater (not shown), there is provided a tubular external reaction tube 1 having an upper end closed and an open lower end. Inside the outer reaction tube 1, an internal reaction tube 2 having an open upper end is provided. Are disposed concentrically with the external reaction tube 1, and the lower ends of the outer reaction tube 1 and the inner reaction tube 2 are supported by a furnace port flange 3. An O-ring is provided between the outer reaction tube 1 and the furnace port flange 3. 5 and a reaction chamber 4 is defined by the internal reaction tube 2. The lower end opening of the furnace port flange 3 is hermetically closed by a seal cap 6, and the seal cap 6 is moved up and down by a boat elevator (not shown) to open and close the lower end opening of the furnace port flange 3. A boat (not shown) is erected on the seal cap 6, and wafers are loaded in multiple stages in a horizontal posture. A reaction gas inlet pipe (not shown) is provided below the furnace port flange 3.
Are connected so as to communicate with the inside of the internal reaction tube 2.
【0019】主排気管7は、前記外部反応管1と内部反
応管2との間に形成される円筒状の空間8下端に連通す
る様、前記炉口フランジ3に接続されている。該主排気
管7には主排気弁9が設けられ、副排気管10が前記主
排気管7の前記主排気弁9上流側と該主排気弁9下流側
に掛渡って連通され、前記副排気管10には副排気弁1
1が設けられている。The main exhaust pipe 7 is connected to the furnace port flange 3 so as to communicate with a lower end of a cylindrical space 8 formed between the external reaction pipe 1 and the internal reaction pipe 2. The main exhaust pipe 7 is provided with a main exhaust valve 9, and a sub exhaust pipe 10 is communicated with the upstream side of the main exhaust pipe 7 and the downstream side of the main exhaust valve 9. The exhaust pipe 10 has a sub exhaust valve 1
1 is provided.
【0020】前記主排気管7には、前記副排気管10の
前記主排気管7との接続部上流に第1分岐管12及び第
2分岐管13が接続されている。前記第1分岐管12に
は第1仕切弁14が設けられ、前記第1分岐管12には
バラトロン15が設けられている。又、前記第2分岐管
13には第2仕切弁21が設けられ、前記第2分岐管1
3にはピラニゲージ16が設けられている。A first branch pipe 12 and a second branch pipe 13 are connected to the main exhaust pipe 7 upstream of a connection between the sub exhaust pipe 10 and the main exhaust pipe 7. The first branch pipe 12 is provided with a first gate valve 14, and the first branch pipe 12 is provided with a baratron 15. Further, the second branch pipe 13 is provided with a second gate valve 21 and the second branch pipe 1
3 is provided with a Pirani gauge 16.
【0021】前記炉口フランジ3への前記主排気管7の
接続部から前記主排気弁9迄の前記主排気管7の外周に
は、主排気管加熱ヒータ17が巻設され、前記副排気弁
11迄の前記副排気管10の外周には副排気管加熱ヒー
タ18が巻設され、前記第1分岐管12及び第1仕切弁
14の外周には、前記バラトロン15に至る迄第1分岐
管加熱ヒータ19が巻設され、前記第2仕切弁21迄の
前記第2分岐管13の外周には、第2分岐管加熱ヒータ
20が巻設されている。A main exhaust pipe heater 17 is wound around the outer periphery of the main exhaust pipe 7 from the connection portion of the main exhaust pipe 7 to the furnace port flange 3 to the main exhaust valve 9, and the sub exhaust is provided. A sub-exhaust pipe heater 18 is wound around the outer circumference of the sub-exhaust pipe 10 up to the valve 11, and a first branch is formed on the outer circumference of the first branch pipe 12 and the first gate valve 14 until the baltron 15 is reached. A tube heater 19 is wound, and a second branch tube heater 20 is wound around the outer circumference of the second branch tube 13 up to the second gate valve 21.
【0022】前記ボートエレベータ(図示せず)により
前記シールキャップ6を介して前記ボート(図示せず)
を下降させ、該ボートにウェーハを装填し、装填後、前
記ボートエレベータにより前記ボートを前記内部反応管
2内に装入する。前記シールキャップ6により前記炉口
フランジ3の下端を完全に密閉した後、前記排気弁9を
閉塞した状態で、前記副排気弁11を開放し、前記副排
気管10を介し、穏やかに前記反応室4内を排気する。
前記反応室4内が所要の圧力迄低下すると、前記副排気
弁11を閉塞し、前記主排気弁9及び前記第1仕切弁1
4を開放し、前記主排気管7を介し前記反応室4内を排
気すると共に前記ヒータ(図示せず)に常時通電し、前
記反応室4内を加熱する。前記第2仕切弁21を開き、
前記ピラニゲージ16により前記反応室4内の圧力を計
測しつつ、該反応室4内を真空引する。The boat (not shown) is moved by the boat elevator (not shown) through the seal cap 6.
And the boat is loaded with wafers. After loading, the boat is loaded into the internal reaction tube 2 by the boat elevator. After the lower end of the furnace port flange 3 is completely sealed by the seal cap 6, the auxiliary exhaust valve 11 is opened with the exhaust valve 9 closed, and the reaction is gently performed through the auxiliary exhaust pipe 10. The inside of the chamber 4 is evacuated.
When the pressure inside the reaction chamber 4 drops to a required pressure, the sub exhaust valve 11 is closed, and the main exhaust valve 9 and the first gate valve 1 are closed.
4 is opened, the inside of the reaction chamber 4 is exhausted through the main exhaust pipe 7, and the heater (not shown) is always energized to heat the inside of the reaction chamber 4. Open the second gate valve 21,
The inside of the reaction chamber 4 is evacuated while measuring the pressure in the reaction chamber 4 by the Pirani gauge 16.
【0023】前記ピラニゲージ16の使用は該反応室4
内を真空引する時に限られる為、真空引する前、或は所
定の圧力迄真空引された後は、前記第2仕切弁21を閉
じる。ウェーハの処理は前記第2仕切弁21が閉じた状
態で行われ、前記反応ガス導入管(図示せず)を介して
反応ガスを導入してウェーハ表面に成膜する等所定の処
理を行う。反応ガス導入中、前記主排気管加熱ヒータ1
7、副排気管加熱ヒータ18、第1分岐管加熱ヒータ1
9、及び第2分岐管加熱ヒータ20に通電し、前記主排
気管7、前記副排気管10、前記第1分岐管12、前記
第2分岐管13が反応副生成物固化温度以上に加熱され
た状態である為、排気ガスは排気ガス中の反応副生成物
が固化することなく、前記主排気管7を経て排気され
る。又、前記第2分岐管加熱ヒータ20から前記ピラニ
ゲージ16への熱の伝達は前記第2仕切弁21により遮
断される。The use of the Pirani gauge 16 depends on the reaction chamber 4
Since the inside is evacuated only, the second gate valve 21 is closed before evacuation or after evacuation to a predetermined pressure. The processing of the wafer is performed in a state where the second gate valve 21 is closed, and a predetermined processing such as introducing a reaction gas through the reaction gas introduction pipe (not shown) to form a film on the wafer surface is performed. During the introduction of the reaction gas, the main exhaust pipe heater 1
7, sub exhaust pipe heater 18, first branch pipe heater 1
9 and the second branch pipe heater 20, the main exhaust pipe 7, the sub exhaust pipe 10, the first branch pipe 12, and the second branch pipe 13 are heated to a temperature equal to or higher than the reaction by-product solidification temperature. In this state, the exhaust gas is exhausted through the main exhaust pipe 7 without the reaction by-products in the exhaust gas solidifying. The transfer of heat from the second branch pipe heater 20 to the Pirani gauge 16 is blocked by the second gate valve 21.
【0024】処理が完了すると、反応ガスの導入を停止
し、前記反応室4内に窒素ガス等の不活性ガスを導入
し、ガスパージし、前記バラトロン15により前記反応
室4内の圧力を計測しつつ、炉内真空引き、炉内窒素ガ
ス導入を何度か繰返し、最終的には、炉内が大気圧にな
る迄、炉内に窒素ガスの導入を行う。第1仕切弁14の
閉は、炉内が大気圧になる迄、炉内に窒素ガスの導入を
行うイベントの前のイベントで行う。前記反応室4内を
常圧に復帰した後前記シールキャップ6を開放し、前記
ボートエレベータ(図示せず)により前記ボート(図示
せず)が引出される。When the process is completed, the introduction of the reaction gas is stopped, an inert gas such as a nitrogen gas is introduced into the reaction chamber 4, the gas is purged, and the pressure in the reaction chamber 4 is measured by the Baratron 15. While evacuation in the furnace and introduction of nitrogen gas in the furnace are repeated several times, nitrogen gas is introduced into the furnace until the inside of the furnace finally reaches atmospheric pressure. The closing of the first gate valve 14 is performed in an event before the event of introducing nitrogen gas into the furnace until the inside of the furnace reaches atmospheric pressure. After the inside of the reaction chamber 4 is returned to normal pressure, the seal cap 6 is opened, and the boat (not shown) is drawn out by the boat elevator (not shown).
【0025】尚、上記実施の形態では、本発明を半導体
製造装置に実施した場合を説明したが、高温で液化、固
化しやすい成分を排気ガスに含む各種装置に実施可能で
あることは言う迄もない。又、対象とするセンサとして
は前記ピラニゲージに限らず大気圧センサ等、耐熱性を
有しない他のセンサであってもよい。In the above-described embodiment, the case where the present invention is applied to a semiconductor manufacturing apparatus has been described. However, it is needless to say that the present invention can be applied to various apparatuses in which components that easily liquefy and solidify at high temperatures are contained in exhaust gas. Nor. The target sensor is not limited to the Pirani gauge, but may be another sensor having no heat resistance, such as an atmospheric pressure sensor.
【0026】[0026]
【発明の効果】以上述べた如く本発明によれば、排気配
管装置に於いて、加熱ヒータ通電時、耐熱性を有しない
センサ上流の仕切弁を設けることにより、前記加熱ヒー
タから前記センサへ熱が伝達されるのを防止できる為、
精度の良い測定を行うことが可能となり、又、前記セン
サに至る配管の非加熱部分の長さの短縮化が図れ、更に
反応ガス導入中、排気ガスが冷却され、排気ガス中の反
応副生成物が固化し、前記センサへ反応副生成物が付着
することも防止できる等、種々の優れた効果を発揮す
る。As described above, according to the present invention, when the heater is energized, a gate valve upstream of the sensor, which does not have heat resistance, is provided in the exhaust piping device, so that heat is supplied from the heater to the sensor. Can be prevented from being transmitted,
Accurate measurement can be performed, the length of the unheated portion of the pipe leading to the sensor can be reduced, and the exhaust gas is cooled during the introduction of the reaction gas, and the reaction by-products in the exhaust gas are reduced. Various excellent effects are exhibited, for example, solidification of the substance and prevention of reaction by-products adhering to the sensor.
【図1】本発明の実施の形態を示す概略説明図である。FIG. 1 is a schematic explanatory view showing an embodiment of the present invention.
【図2】従来例を示す概略説明図である。FIG. 2 is a schematic explanatory view showing a conventional example.
1 外部反応管 2 内部反応管 7 主排気管 13 第2分岐管 16 ピラニゲージ 20 第2分岐管加熱ヒータ 21 第2仕切弁 DESCRIPTION OF SYMBOLS 1 External reaction tube 2 Internal reaction tube 7 Main exhaust pipe 13 Second branch pipe 16 Pirani gauge 20 Second branch pipe heater 21 Second gate valve
Claims (1)
て、排気管に分岐管を介してセンサを設け、前記分岐管
途中に仕切弁を設けると共に前記分岐管の仕切弁より上
流側にヒータを設けたことを特徴とする排気配管装置。In an exhaust pipe apparatus for heating an exhaust pipe, a sensor is provided in the exhaust pipe via a branch pipe, a gate valve is provided in the middle of the branch pipe, and a heater is provided upstream of the gate valve of the branch pipe. An exhaust piping device comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9238850A JPH1163361A (en) | 1997-08-20 | 1997-08-20 | Exhaust piping device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9238850A JPH1163361A (en) | 1997-08-20 | 1997-08-20 | Exhaust piping device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1163361A true JPH1163361A (en) | 1999-03-05 |
Family
ID=17036199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9238850A Pending JPH1163361A (en) | 1997-08-20 | 1997-08-20 | Exhaust piping device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1163361A (en) |
-
1997
- 1997-08-20 JP JP9238850A patent/JPH1163361A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3270730B2 (en) | Substrate processing apparatus and substrate processing method | |
US5365772A (en) | Leak detection in a reduced pressure processing apparatus | |
JP3403181B2 (en) | Heat treatment apparatus and heat treatment method | |
EP0928014A2 (en) | An apparatus for manufacturing a semiconductor material | |
US6287984B1 (en) | Apparatus and method for manufacturing semiconductor device | |
JPH1163361A (en) | Exhaust piping device | |
JPH05304099A (en) | Flow-rate control device | |
JP3507220B2 (en) | Semiconductor manufacturing equipment | |
JP3098093B2 (en) | Chemical vapor deposition equipment | |
JP2000306838A (en) | Treatment method and apparatus for semiconductor substrate | |
JPH0831743A (en) | Method and equipment for preventing contamination of cvd system | |
JP3325384B2 (en) | Temperature measurement device for heat treatment furnace | |
JP3844999B2 (en) | Substrate processing method | |
JP2644903B2 (en) | Thin film forming equipment | |
JPS6116531A (en) | Manufacture of semiconductor device | |
JPH0250619B2 (en) | ||
JP2620698B2 (en) | Heat treatment equipment | |
US6083833A (en) | Method for forming conductive film for semiconductor device | |
JPH0831745A (en) | Semiconductor manufacturing equipment | |
JP3153138B2 (en) | Method for manufacturing semiconductor device | |
JP2634424B2 (en) | Vapor phase growth furnace and processing method | |
JPH0574757A (en) | High pressure oxidation furnace for semiconductor device | |
JPH01191427A (en) | Low pressure cvd system | |
JPH0815540B2 (en) | Processing equipment | |
JPH0824108B2 (en) | Tube equipment for semiconductor manufacturing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040806 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040806 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070509 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080408 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080521 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20080609 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20080725 |