JPH1155103A - Semiconductor integrated circuit with built-in output protection circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress as much as possible the decrease of an output amplitude in normal operation, when processing is performed for preventing the inflow of a current to an output circuit in the state for interrupting the power supply voltage of the output circuit. SOLUTION: In a CMOS-type semiconductor integrated circuit composed of a p-channel MOS transistor 1 and an n-channel MOS transistor 5, an n- channel MOS transistor 4 for current cutoff is inserted between the drain terminal of the p-channel MOS transistor 1 and an output terminal 12, and the output signal of a CMOS inverter circuit 30 is connected from an input terminal 11 to the gate terminal of the n-channel MOS transistor 4. Then, since conducting/ non-conducting state of the inserted n-channel MOS transistor 4 is controlled by the output voltage of the CMOS inverter circuit 30, the inflow of the current to the output circuit is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an output circuit of a semiconductor integrated circuit, and more particularly to an output circuit of a semiconductor integrated circuit used for an interface in which a control unit of a power supply for supplying power to the semiconductor integrated circuit is different.

[0002]

2. Description of the Related Art An output circuit of a general CMOS type semiconductor integrated circuit is shown in FIG. 3, and a sectional view of a semiconductor integrated circuit for forming the output circuit is shown in FIG. This circuit is composed of two elements, a p-channel MOS transistor 1 and an n-channel MOS transistor 5.

The gate terminals of the transistors 1 and 5 are connected to an input terminal 11. The source terminal of the p-channel MOS transistor 1 is connected to the power supply terminal 13,
The drain terminal is connected to the output terminal 12. The source terminal of the n-channel MOS transistor 5 is connected to the ground terminal 14, and the drain terminal is connected to the output terminal 12.

According to this structure, parasitic diodes 6 and 10 are generated in the p-channel MOS transistor 1 and the n-channel MOS transistor 5, respectively, and a current flows from the output terminal 12 to the power supply terminal 13 as shown in FIG. The diode 10 is formed so that a current flows from the ground terminal 14 to the output terminal 12.

When this circuit is connected to a bus as shown in FIG. 6, when a voltage higher than the power supply voltage is applied to the output terminal due to noise or the like, a diode 6 is connected from the output terminal 12.
A current flows to the power supply terminal 13 via the terminal.

That is, the p-channel MOS transistor 1
A forward bias is applied to a pn junction parasitic between the drain and source terminals of the transistor. For this reason, the current may continue to flow and latch-up may occur.

Conversely, when a voltage lower than the ground potential is applied to the output terminal 12, a current flows from the ground terminal 14 to the output circuit 12 via the diode 10.

That is, a forward bias is applied to a pn junction parasitic between the drain and the source of the n-channel MOS transistor 5, and latch-up may occur.

When this circuit is connected to a bus as shown in FIG. 6, when the power of one output circuit is cut off (the power supply voltage becomes 0 V), the power supply terminal of the output circuit is grounded. Therefore, even if another output circuit outputs a High level voltage, the bus line is clamped by the parasitic diode 6 of the output circuit whose power is turned off. The clamp voltage is 0.7 V to 0.8 V, which is a forward voltage of one stage of the pn junction diode.

For this reason, the bus line has a voltage of 0.7V to 0.2V.
Transmission of a High level signal exceeding 8 V becomes impossible.

A circuit proposed to cope with the above problem is disclosed in Japanese Patent Application Laid-Open No. 62-120063.

FIG. 5 shows a conventional circuit disclosed in Japanese Patent Application Laid-Open No. 62-120063. An output circuit composed of a p-channel MOS transistor 1 and an n-channel MOS transistor 5 has a cathode connected to an output terminal 12.
A pn junction diode 17 is provided so as to be connected to the drain of the n-channel MOS transistor 5 and to connect the anode side to the drain side of the p-channel MOS transistor 1. As a result, even when a signal voltage higher than the power supply voltage is applied from the output terminal, the diode is reverse-biased, so that current can be prevented from flowing to the substrate via the drain of the p-channel MOS transistor 1, and There is an up prevention effect. Further, even if a voltage is applied to the output terminal 12 in a state where the power of the output circuit is cut off, pn
Since the junction diode 17 is reverse-biased, no current flows, so that the output terminal is not clamped at the low level.

[0013]

However, Japanese Patent Application Laid-Open No.
In the conventional method disclosed in JP-A-120063, one stage of a pn junction diode is inserted in the output circuit. Therefore, when the output circuit outputs a High level voltage, the potential drop due to the diode cannot be avoided. JP-A-62-2
In another conventional method disclosed in JP-A-120063, a reverse current prevention diode is also inserted between the n-channel MOS transistor 5 for outputting a low-side voltage and the output terminal 12, so that in this case, a low level is provided. Potential rise cannot be avoided. That is, there is a problem that the output amplitude is reduced by inserting a diode into the output stage.

When the conventional circuit is used, in order to ensure signal transmission with the next-stage circuit connected to the output circuit or the receiver circuit 22 connected to the bus, the receiver circuit 22 is driven by the input voltage. Problems such as the necessity of using a circuit with a wide margin and the necessity of special measures such as noise prevention in signal transmission lines and bus lines in order to prevent a reduction in operating margin, resulting in increased restrictions on use. was there.

An object of the present invention is to reduce the output amplitude during normal operation, which is a drawback of the conventional system, even if measures are taken to prevent current from flowing into the output circuit when the power supply voltage of the output circuit is cut off. It is an object of the present invention to provide a semiconductor integrated circuit which can be suppressed as much as possible.

[0016]

A circuit according to the present invention is a CMOS type semiconductor integrated circuit comprising a p-channel MOS transistor 1 and an n-channel MOS transistor 5 in which a drain terminal and an output terminal 12 of a p-channel MOS transistor 1 are connected. N-channel MO for interrupting current
S transistor 4 is inserted, and CMOS
The output signal of the inverter circuit 30 is supplied to the n-channel MO.
Connected to the gate terminal of the S transistor 4 and the CMOS
By controlling the conduction / non-conduction state of the inserted n-channel MOS transistor 4 by the output voltage of the inverter circuit 30, the current is prevented from flowing into the output circuit.

[0017]

Embodiments of the present invention will now be described in detail with reference to the drawings.

Referring to FIG. 1, in an embodiment of the present invention, an output circuit includes a p-channel MOS transistor 1;
n-channel MOS transistors 4 and 5, p-channel MOS transistor 2 and n-channel MOS
And a CMOS inverter circuit 30 including a transistor 3.

The gate terminal of the p-channel MOS transistor 1 and the gate terminal of the n-channel MOS transistor 5 are connected to the input terminal 11. p channel MO
The source terminal of S transistor 1 is connected to power supply terminal 13, and the source of n-channel MOS transistor 5 is connected to ground terminal 14.

The p-channel MOS transistor 1
Is connected to the drain terminal of an n-channel MOS transistor 4 for interrupting current, and the n-channel M
The drain terminal of the OS transistor 5 is connected to the output terminal 12 and the source of the n-channel MOS transistor 4. The gate terminal of the current blocking n-channel MOS transistor 4 is connected to the output of the CMOS inverter circuit 30.

FIG. 2 is a sectional view showing the case where the circuit of FIG. 1 is configured as an actual semiconductor integrated circuit. 1 and 2 indicate the same part. In FIG. 2, p-channel MOS transistors 1 and 2
, And n-channel MOS transistors 3, 4 and 5 are configured as pn junctions, respectively, whereby parasitic diodes 1, 2, 3, 4 and 5 are generated.

Next, the operation of this embodiment will be described.

Consider a case where the power supply voltage is set to a normal operation voltage.

When a low level voltage is input to input terminal 11, n-channel MOS transistor 5 is turned off and p-channel MOS transistor 1 is turned on. Further, since the CMOS inverter circuit 30 outputs a High level, the n-channel MOS transistor 4 is also turned on. That is, the two transistors 1 and 4 on the power supply terminal side as viewed from the output terminal 12 conduct, so that a high level is output to the output terminal 12.

Conversely, when a High level voltage is input to the input terminal 11, the n-channel MOS transistor 5
Is on, and p-channel MOS transistor 1 is off.

The CMOS inverter circuit 30 is Lo
In order to output the w-level, the n-channel MOS transistor 4 is also turned off. That is, only the transistor on the ground terminal side as viewed from the output terminal 12 conducts, so that a low level is output to the output terminal 12.

That is, when the power supply voltage is set to the normal operation power supply voltage, it can be said that these series of operations are the same as the switching operation of a general CMOS circuit.

The n-channel MOS transistor 4
It is well known that the conduction resistance of the diode can be freely set unlike the forward resistance of the diode, and the voltage drop during conduction can be sufficiently smaller than the forward terminal voltage (0.7 V to 0.8 V) of the diode. is there.

Next, consider the case where the power supply of the output circuit is cut off.

In this case, the power supply terminal 13 of the output circuit is at 0 V
, The p-channel MOS transistors 1 and 2
2 and n-channel MOS transistors 3, 4, and 5 are all turned off. When viewed from the output terminal, the electrical connection is only the parasitic diode 10 on the ground side.

Even when a High level voltage is applied to output terminal 12, both n-channel MOS transistors 4 and 5 are non-conductive, and reverse bias is applied to parasitic diode 10.

Therefore, when the power supply is turned off, the external
Even if a level voltage is applied, no current flows into the output circuit and it can be said that there is no electrical connection.

FIG. 6 shows an example of use of the output circuit according to the present invention.

It is assumed that a plurality of output circuits 21 are connected to the bus line 20 via the output terminal 12. Note that the output circuit must be a circuit that can be set to the 3-state state in order to connect to the bus. However, in the following, the operation when the power supply of the output circuit is turned off is mainly described. For simultaneously controlling the n-channel MOS transistor 10 and the n-channel MOS transistor 10 to a non-conductive state.
The description of the -state control circuit is omitted.

The bus line 20 is also connected to a receiver circuit 22 for receiving the logic signal output from the output circuit 21. Here, a case where the power supply of a specific output circuit is cut off will be described. When a general CMOS circuit (shown in FIG. 2) is connected to the bus as shown in FIG. 6, a parasitic diode 6 is formed in the output circuit. However, the bus line is clamped by the parasitic diode and signal transmission in the bus becomes impossible. However, when the output circuit according to the present invention is connected to the bus, when a power supply of a specific output circuit is turned off, a special procedure is performed. It is possible to disconnect the electrical connection between the output circuit and the external circuit by cutting off the power supply without stepping on the power supply.

Thus, even if the power of a specific output circuit connected to the bus is turned off during signal transmission, the signal on the bus is not clamped at the low level, and the signal transmission on the bus can be continued. it can.

In this embodiment, an example for realizing the method of electrically shutting off the output portion of the CMOS circuit has been described.
Similarly, for a totem pole type bipolar transistor circuit instead of the circuit, the electrical cutoff can be realized by using an npn bipolar transistor.

[0038]

As described above, according to the present invention, the CMOS output circuit is provided with an n-channel MOS transistor serving as an electric connection / disconnection circuit to an external circuit, so that when the power is turned off, the cut-off circuit is turned off. Even when the power supply of the output circuit is in the OFF state, the presence of a diode that is normally parasitic in the CMOS output circuit can be ignored, and the CMOS circuit does not have to worry about malfunctions such as latch-up.
The S circuit can be used freely for signal transmission of the interface unit in which the power supply control unit is independent, and there is an effect that the reliability of the system using the output circuit can be improved. Since the potential drop during conduction of the n-channel MOS transistor is generally smaller than that of the pn junction diode, it is possible to suppress a decrease in amplitude during normal operation by employing the present invention using the n-channel MOS transistor as the current cutoff circuit. Becomes

[Brief description of the drawings]

FIG. 1 is a circuit diagram according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the embodiment of the present invention.

FIG. 3 is a circuit diagram showing a general CMOS output circuit.

FIG. 4 is a cross-sectional view of a general CMOS output circuit.

FIG. 5 is a circuit diagram showing a conventional circuit in which a countermeasure is taken for a general CMOS circuit.

FIG. 6 is a diagram illustrating an example of a bus connection of an output circuit.

[Explanation of symbols]

 1, 2, p-channel MOS transistor 3, 4, 5, n-channel MOS transistor 6, 7, 8, 9, 10, 10 parasitic diode 11 input terminal 12 output terminal 13 power terminal 14 ground terminal 15 n-well 16 p-type substrate 17 pn junction diode Reference Signs List 20 bus line 21 output circuit 22 receiver circuit 23 receiver input terminal 30 CMOS inverter circuit

Claims (2)

[Claims] 1. A CMOS comprising a p-channel MOS transistor and an n-channel MOS transistor.
In the circuit, n is further added between the p-channel MOS transistor and the n-channel MOS transistor.
A channel MOS transistor is inserted, a source of the inserted n-channel MOS transistor is connected to an output terminal, and an input signal is supplied from an input terminal to gate terminals of a p-channel MOS transistor and an n-channel MOS transistor. The power is supplied to the gate of the inserted n-channel MOS transistor via an inverter circuit, and all the circuits in the output circuit can cut off the electrical connection with the external circuit by cutting off the power supply voltage in the circuit. Semiconductor integrated circuit with built-in output protection circuit. 2. The semiconductor integrated circuit with a built-in output protection circuit according to claim 1, wherein a bipolar transistor having a totem pole configuration is used in place of said CMOS circuit.