JPH1154570A - Sensor electrode extraction structure - Google Patents

Sensor electrode extraction structure

Info

Publication number
JPH1154570A
JPH1154570A JP9207844A JP20784497A JPH1154570A JP H1154570 A JPH1154570 A JP H1154570A JP 9207844 A JP9207844 A JP 9207844A JP 20784497 A JP20784497 A JP 20784497A JP H1154570 A JPH1154570 A JP H1154570A
Authority
JP
Japan
Prior art keywords
electrode pad
sensor
electrode
thin film
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9207844A
Other languages
Japanese (ja)
Inventor
Yoshio Egashira
良夫 江頭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP9207844A priority Critical patent/JPH1154570A/en
Publication of JPH1154570A publication Critical patent/JPH1154570A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/4912—Layout
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    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
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    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

Abstract

PROBLEM TO BE SOLVED: To bring a checked body near to the sensor detecting part of a sensor to the position which takes the thickness of a thin film board into account, by using the thin film board having a third electrode pad connected to a first electrode pad, a fourth electrode pad spaced from the third electrode pad, and a wiring pattern for connecting the third and the fourth electrode pads. SOLUTION: A thin film glass board 27 having a third electrode pad 29 connected to the first electrode pad 25 of a sensor 22, a fourth electrode pad 30 spaced from the third electrode pad 29, and a wiring pattern for connecting the third and the fourth electrode pads 29, 30 is prepared in advance. The sensor 22 is packaged upward on a circuit board 21. To extract an electric component such as a signal from the first electrode pad 25 of the sensor 22, the third electrode pad 29 made of a wiring in the thin film glass board 27 is bonded to the first electrode pad 25 by a eutectic alloy method, whereby the electric component of the sensor 22 can be extracted from the second electrode pad 26 of the circuit board 21.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はセンサ電極取出し構
造に関し、特にシリコン単結晶材を用いたギャップの狭
い半導体センサからの信号を外部へ取出すためのセンサ
電極取出し構造に関する。The present invention relates to a sensor electrode extraction structure, and more particularly to a sensor electrode extraction structure for extracting a signal from a semiconductor sensor having a narrow gap using a silicon single crystal material to the outside.

【０００２】[0002]

【従来の技術】従来、センサ電極電極取出し構造は、図
２（Ａ），（Ｂ）に示すようになっていた。ここで、図
２（Ａ）は全体図、図２（Ｂ）は図２（Ａ）のＸ−Ｘ線
に沿う断面図である。2. Description of the Related Art Conventionally, a sensor electrode extraction structure has been shown in FIGS. 2 (A) and 2 (B). Here, FIG. 2A is an overall view, and FIG. 2B is a cross-sectional view taken along line XX of FIG. 2A.

【０００３】図中の付番１は回路基板であり、この回路
基板１上にセンサ２や複数の電子部品（又は電気部品）
３が搭載されている。前記センサ２の上面の一部はセン
サ検知部４となっており、前記センサ２の上面に複数の
電極パッド５が設けられている。前記センサ２に隣接す
る回路基板１上には、前記電極パッド５とボンディング
ワイヤ６を介して電気的に接続する電極パッド７が設け
られている。[0003] Reference numeral 1 in the drawing denotes a circuit board, on which a sensor 2 and a plurality of electronic components (or electrical components) are provided.
3 is installed. A part of the upper surface of the sensor 2 serves as a sensor detection unit 4, and a plurality of electrode pads 5 are provided on the upper surface of the sensor 2. On the circuit board 1 adjacent to the sensor 2, an electrode pad 7 that is electrically connected to the electrode pad 5 via a bonding wire 6 is provided.

【０００４】前記ボンディングワイヤ６は、通常、超音
波ワイヤボンディング法と呼ばれる手法により電極パッ
ド５，７間の接続を行っていた。これを図３（Ａ）〜
（Ｅ）を参照して説明する。まず、図３（Ａ）の状態か
ら回路基板１上の電極パッド７上にボンディングワイヤ
６の一端をキャピラリー11を用いて熱溶着させて接続さ
せる（図３（Ｂ）参照）。つづいて、図３（Ｃ）のよう
にボンディングワイヤ６の他端側をセンサ２上面の電極
パッド５の真上に移動させた後、ボンディングワイヤ６
の他端を電極パッド５に接続させる（図３（Ｄ）参
照）。この後、余分なボンディングワイヤ６の他端側を
クランパ−12で切断し、ボンディングワイヤ６による接
続を終了する（図３（Ｅ）参照）。[0006] The bonding wires 6 are usually connected between the electrode pads 5 and 7 by a method called an ultrasonic wire bonding method. This is shown in FIG.
This will be described with reference to FIG. First, one end of the bonding wire 6 is connected to the electrode pad 7 on the circuit board 1 by heat welding using a capillary 11 from the state of FIG. 3A (see FIG. 3B). Subsequently, as shown in FIG. 3C, the other end of the bonding wire 6 is moved to a position directly above the electrode pad 5 on the upper surface of the sensor 2, and then the bonding wire 6 is moved.
Is connected to the electrode pad 5 (see FIG. 3D). Thereafter, the other end of the extra bonding wire 6 is cut by the clamper 12 to terminate the connection by the bonding wire 6 (see FIG. 3E).

【０００５】[0005]

【発明が解決しようとする課題】ところで、図２の構成
の電極取出し構造においては、センサ２上面の電極パッ
ド５と回路基板１上の電極パッド７がボンディングワイ
ヤ６を介して電気的に接続されているが、ボンディング
の関係でボンディングワイヤ６の高さがセンサ検知部４
の位置より高い位置に存在する。従って、センサ２で被
検査体を検知する際に前記ボンディングワイヤ６が被検
査体に接触し、断線したり、あるいは検知する際の被検
査体の接近が制限される等の問題が生じていた。In the electrode extraction structure shown in FIG. 2, the electrode pads 5 on the upper surface of the sensor 2 and the electrode pads 7 on the circuit board 1 are electrically connected via bonding wires 6. However, due to bonding, the height of the bonding wire 6 is
Exists at a higher position than. Therefore, when the test object is detected by the sensor 2, the bonding wire 6 comes into contact with the test object and is disconnected, or there is a problem that the approach of the test object at the time of detection is restricted. .

【０００６】本発明はこうした事情を考慮してなされた
もので、チップ上の第１の電極パッドと回路基板上の第
２の電極パッドの接続に際し、第１の電極パッドと接続
する第３の電極パッド、該第３の電極パッドと離間する
第４の電極パッド及び第３・第４の電極パッド同士を接
続する配線パターンを有する薄膜板を用いた構成とする
ことにより、被検査体を薄膜板の厚み分を考慮した位置
までセンサのセンサ検知部付近へ接近させることがで
き、もって高精度なセンサシステムが実現できるセンサ
電極取出し構造を提供することを目的とする。The present invention has been made in view of such circumstances, and when connecting a first electrode pad on a chip to a second electrode pad on a circuit board, a third electrode connected to the first electrode pad. By using an electrode pad, a fourth electrode pad spaced apart from the third electrode pad, and a thin film plate having a wiring pattern for connecting the third and fourth electrode pads to each other, the test object can be formed into a thin film. It is an object of the present invention to provide a sensor electrode extraction structure that can approach a position near a sensor detecting portion of a sensor to a position in consideration of a thickness of a plate, thereby realizing a highly accurate sensor system.

【０００７】[0007]

【課題を解決するための手段】本発明は、回路基板上に
搭載され、上部にセンサ検出部と第１の電極パッドを有
するセンサと、このセンサと離間して前記回路基板上に
形成された第２の電極パッドと、前記第１の電極パッド
と接続する第３の電極パッド、この第３の電極パッドと
離間する第４の電極パッド、及び第３・第４の電極パッ
ド同士を接続する配線パターンを有する薄膜板と、この
薄膜板の第４の電極パッドと回路基板上の第２の電極パ
ッドを電気的に接続する接続電線とを具備することを特
徴とするセンサ電極取出し構造である。According to the present invention, there is provided a sensor mounted on a circuit board and having a sensor detecting portion and a first electrode pad on an upper portion, and formed on the circuit board at a distance from the sensor. A second electrode pad, a third electrode pad connected to the first electrode pad, a fourth electrode pad separated from the third electrode pad, and a connection between the third and fourth electrode pads. A sensor electrode extraction structure, comprising: a thin film plate having a wiring pattern; and a connection wire for electrically connecting a fourth electrode pad of the thin film plate and a second electrode pad on a circuit board. .

【０００８】本発明において、第３の電極パッドは、第
１の電極パッドと共晶合金方式による接続（接合）を実
施することが好ましい。ここで、同電極パッドの材料
は、Ａｕ材をベースとしたもの例えばＡｕ−Ｓｉが好ま
しい。前記共晶合金方式は次のような特徴を有する。即
ち、この方式は、1)ダイボンディングのためのウェハ裏
面メタイライズが不要である、2)オーミックコンタクト
のためのウェハ裏面メタライズが不要である、3)熱放射
性が良好である、4)ワイヤーボンディング法との適応性
は、ＴＣボンディング，ＵＴＣボンディング，ＵＳボン
ディング各々の場合に良好である、4)リードフレーム材
との適応性は42Alloy の場合は良好であるが、Cu＆Cu a
lloyの場合は不良である、5)自動化が良好である、とい
う特徴を有する。In the present invention, the third electrode pad is preferably connected (joined) to the first electrode pad by a eutectic alloy method. Here, the material of the electrode pad is preferably based on Au material, for example, Au-Si. The eutectic alloy method has the following features. That is, this method is 1) no wafer backside metallization for die bonding, 2) no wafer backside metallization for ohmic contact, 3) good heat radiation, 4) wire bonding method Adaptability with TC bonding, UTC bonding and US bonding is good. 4) Adaptability with lead frame material is good with 42Alloy, but Cu & Cu a
In the case of lloy, it is bad, and 5) the automation is good.

【０００９】[0009]

【発明の実施の形態】以下、この発明の一実施例につい
て図１（Ａ），（Ｂ）を参照して説明する。ここで、図
１（Ａ）は本実施例に係るセンサ電極電極取出し構造の
平面図、図１（Ｂ）は図１（Ａ）のＸ−Ｘ線に沿う断面
図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. Here, FIG. 1A is a plan view of a sensor electrode electrode extraction structure according to the present embodiment, and FIG. 1B is a cross-sectional view taken along line XX of FIG. 1A.

【００１０】図中の付番21は回路基板であり、この回路
基板21上にセンサ22や複数の電子部品（又は電気部品）
23が実装されている。前記センサ22の上面の一部はセン
サ検知部24となっており、該センサ22の上面には外部と
の電気的接続を行うための複数の第１の電極パッド25が
センサ22の対向する側辺に沿って設けられている。ここ
で、前記第１の電極パッド25は、Ａｕ材をベースとした
Ａｕ−Ｓｉからなる。記電子部品23は、センサ22で得ら
れた微弱な電気信号を増幅又は波形整形等信号処理する
ためのものである。前記センサ22に隣接する箇所に対応
する前記回路基板21上には、前記第１の電極パッド25の
並び方向に沿って複数の第２の電極パッド26が設けられ
ている。Reference numeral 21 in the drawing denotes a circuit board, on which a sensor 22 and a plurality of electronic components (or electrical components) are provided.
23 have been implemented. A part of the upper surface of the sensor 22 is a sensor detecting unit 24, and a plurality of first electrode pads 25 for making an electrical connection with the outside are provided on the upper surface of the sensor 22 on the side facing the sensor 22. It is provided along the side. Here, the first electrode pad 25 is made of Au-Si based on an Au material. The electronic component 23 is for performing signal processing such as amplification or waveform shaping on a weak electric signal obtained by the sensor 22. A plurality of second electrode pads 26 are provided on the circuit board 21 corresponding to locations adjacent to the sensor 22 along the direction in which the first electrode pads 25 are arranged.

【００１１】前記センサ22の上部の第１電極パッド25と
回路基板21上の第２の電極パッド26とは、薄膜ガラス板
27及び接続電線28を介して電気的に接続されている。即
ち、薄膜ガラス板27の一主面（下面）には、センサ22の
上部の第１電極パッド25と接続する複数の第３の電極パ
ッド29と、これらの第３の電極パッド29と離間する複数
の第４の電極パッド30と、前記第３の電極パッド29と第
４の電極パッド30同士を接続する配線パターン31が形成
されている。そして、薄膜ガラス板27下面の第４の電極
パッド30と回路基板21上の第２の電極パッド26とが、接
続電線28により電気的に接続されている。なお、前記第
３の電極パッド29は、共晶合金方式による接続（接合）
を実施するために、前記第１の電極パッド25と同様に、
Ａｕ−Ｓｉからなる。The first electrode pad 25 on the sensor 22 and the second electrode pad 26 on the circuit board 21 are formed by a thin glass plate.
27 and are electrically connected via a connection wire 28. That is, on one main surface (lower surface) of the thin film glass plate 27, a plurality of third electrode pads 29 connected to the first electrode pads 25 on the upper portion of the sensor 22, and the third electrode pads 29 are separated from each other. A plurality of fourth electrode pads 30 and a wiring pattern 31 for connecting the third electrode pads 29 and the fourth electrode pads 30 are formed. Then, the fourth electrode pads 30 on the lower surface of the thin film glass plate 27 and the second electrode pads 26 on the circuit board 21 are electrically connected by connection wires 28. The third electrode pad 29 is connected (joined) by a eutectic alloy method.
In order to carry out, similarly to the first electrode pad 25,
It is made of Au-Si.

【００１２】次に、上述した構成のセンサ電極電極取出
し構造の組立法について説明する。まず、予めセンサ22
の第１の電極パッド25と接続する第３の電極パッド29
と、この第３の電極パッド29と離間した第４の電極パッ
ド30と、第３・第４の電極パッド29，30同士を接続する
配線パターン31を有する薄膜ガラス板27を用意する。つ
づいて、センサ22を、センサ検知部24を上向き（被検査
体が存在する向き）に回路基板22に実装する。つづい
て、前記センサ22の第１の電極パッド25から信号等の電
気成分を取り出す（又は供給する）ために、薄膜ガラス
板27内に配線製作された第３の電極パッド29を、共晶合
金方式により前記第１の電極パッド25と接合した。この
ため、第１の電極25及び第３の電極パッド29に用いる材
料はＡｕ材をベースとした。具体的には、Ａｕ−Ｓｉを
用いた。次に、前記ガラス板27の第４の電極パッド30と
回路基板21上の第２の電極パッド26とを接続配線28で例
えば半田付けで接続する。これによりセンサ22の電気成
分が回路基板21の第２の電極パッド26で取出し（又は供
給）することができる。その後、第２の電極パッド26を
使用して電子部品23の端子と回路基板21上へ印刷配線を
用いて電気的な接続を行うことにより、センサ信号の処
理が可能となる。Next, a method of assembling the sensor electrode extraction structure having the above-described configuration will be described. First, the sensor 22
Third electrode pad 29 connected to the first electrode pad 25 of FIG.
Then, a thin film glass plate 27 having a fourth electrode pad 30 separated from the third electrode pad 29 and a wiring pattern 31 connecting the third and fourth electrode pads 29, 30 is prepared. Subsequently, the sensor 22 is mounted on the circuit board 22 with the sensor detection unit 24 facing upward (the direction in which the test object exists). Subsequently, in order to extract (or supply) an electric component such as a signal from the first electrode pad 25 of the sensor 22, the third electrode pad 29 formed in the thin-film glass plate 27 is connected to a eutectic alloy. It was bonded to the first electrode pad 25 by a method. Therefore, the material used for the first electrode 25 and the third electrode pad 29 is based on Au material. Specifically, Au-Si was used. Next, the fourth electrode pad 30 on the glass plate 27 and the second electrode pad 26 on the circuit board 21 are connected by connection wiring 28 by, for example, soldering. Thereby, the electric component of the sensor 22 can be taken out (or supplied) by the second electrode pad 26 of the circuit board 21. Thereafter, by using the second electrode pads 26 to electrically connect the terminals of the electronic component 23 and the circuit board 21 using printed wiring, sensor signal processing becomes possible.

【００１３】上述したように、本発明に係るセンサ電極
取出し構造は、一主面にセンサ22の第１の電極パッド25
と接続する第３の電極パッド29と、この第３の電極パッ
ド29と離間した第４の電極パッド30と、第３・第４の電
極パッド同士を接続する配線パターン31を有する薄膜ガ
ラス板27を用いて、このガラス板27の電極パッド側を下
方に向けて第３の電極パッド29と第２の電極パッド25と
を共晶合金方式により接合させ、かつ第４の電極パッド
30と回路基板21上の第２の電極パッド26を接続電線28に
より接続させた構成となっているため、被検査体を薄膜
ガラス板27の厚み分を考慮した位置まで、センサ22のセ
ンサ検知部24付近へ接近させることができる。As described above, in the sensor electrode extraction structure according to the present invention, the first electrode pad 25 of the sensor 22 is provided on one main surface.
A third electrode pad 29 connected to the third electrode pad 29, a fourth electrode pad 30 separated from the third electrode pad 29, and a thin-film glass plate 27 having a wiring pattern 31 connecting the third and fourth electrode pads. The third electrode pad 29 and the second electrode pad 25 are joined by the eutectic alloy method with the electrode pad side of the glass plate 27 facing downward, and the fourth electrode pad
30 and the second electrode pad 26 on the circuit board 21 are connected by the connection wire 28, so that the object to be inspected can be detected by the sensor 22 until the position corresponding to the thickness of the thin film glass plate 27 is considered. It can be approached near the part 24.

【００１４】事実、ガラス板27の厚みは現在の技術レベ
ルでは０．１ｍｍ程度の製作が可能であり、本発明を採
用することにより大幅に被検査体をセンサへ接近させる
ことが可能となる。従って、センサの検知レベルが向上
してＳ／Ｎ向上となり、高精度なセンサシステムが実現
でき、製品のイメージを大幅にアップすることができ
る。In fact, the glass plate 27 can be manufactured with a thickness of about 0.1 mm at the current technical level, and by employing the present invention, the object to be inspected can be greatly brought close to the sensor. Therefore, the detection level of the sensor is improved and the S / N ratio is improved, a highly accurate sensor system can be realized, and the image of the product can be greatly improved.

【００１５】これに対し、従来技術では、先に述べたよ
うに、センサからの電気信号の取出し（又は供給）を行
う電極パッドへの電線の接続は、ボンディングワイヤを
用いて実施していたため、そのワイヤ接続メカニズム上
センサの電極パッド高さ位置から更に高い位置まで吊り
上げた後、接続先の電極パッドへ接続していた。このた
め、センサのセンサ検知部付近に被検査体を接近させる
ことは不可能に近かった。On the other hand, in the prior art, as described above, the connection of the electric wire to the electrode pad for taking out (or supplying) the electric signal from the sensor is performed using the bonding wire. On the wire connection mechanism, after being lifted from the height of the electrode pad of the sensor to a higher position, it was connected to the electrode pad of the connection destination. For this reason, it was almost impossible to make the test object approach the vicinity of the sensor detecting portion of the sensor.

【００１６】なお、上記実施例では、薄膜板として薄膜
ガラス板を用いた場合について述べたが、これに限定さ
れない。また、センサ上の第１の電極パッドと薄膜ガラ
ス板の第３の電極パッドの接合も共晶合金方式に限定さ
れない。In the above embodiment, the case where the thin film glass plate is used as the thin film plate has been described, but the present invention is not limited to this. Further, the bonding between the first electrode pad on the sensor and the third electrode pad on the thin film glass plate is not limited to the eutectic alloy method.

【００１７】[0017]

【発明の効果】以上詳述したように本発明によれば、チ
ップ上の第１の電極パッドと回路基板上の第２の電極パ
ッドの接続に際し、第１の電極パッドと接続する第３の
電極パッド、該第３の電極パッドと離間する第４の電極
パッド及び第３・第４の電極パッド同士を接続する配線
パターンを有する薄膜板を用いた構成とすることによ
り、被検査体を薄膜板の厚み分を考慮した位置までセン
サのセンサ検知部付近へ接近させることができ、もって
高精度なセンサシステムが実現できるセンサ電極取出し
構造を提供できる。As described above in detail, according to the present invention, when the first electrode pad on the chip is connected to the second electrode pad on the circuit board, the third electrode pad connected to the first electrode pad is connected. By using an electrode pad, a fourth electrode pad spaced apart from the third electrode pad, and a thin film plate having a wiring pattern for connecting the third and fourth electrode pads to each other, the test object can be formed into a thin film. It is possible to provide a sensor electrode extraction structure that can approach the vicinity of the sensor detection portion of the sensor to a position considering the thickness of the plate, thereby realizing a highly accurate sensor system.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施例に係るセンサ電極取出し構造
の説明図で、図１（Ａ）は平面図、図１（Ｂ）は図１
（Ａ）のＸ−Ｘ線に沿う断面図。FIG. 1 is an explanatory view of a sensor electrode take-out structure according to one embodiment of the present invention, wherein FIG. 1 (A) is a plan view and FIG. 1 (B) is FIG.
Sectional drawing which follows the XX line of (A).

【図２】従来のセンサ電極取出し構造の説明図で、図２
（Ａ）は平面図、図２（Ｂ）は図２（Ａ）のＸ−Ｘ線に
沿う断面図。FIG. 2 is an explanatory view of a conventional sensor electrode take-out structure.
2A is a plan view, and FIG. 2B is a cross-sectional view taken along line XX of FIG. 2A.

【図３】図２のセンサ電極取出し構造におけるワイヤボ
ンディングの電極パッドへの接続の仕方を工程順に示す
説明図。FIG. 3 is an explanatory view showing a method of connecting wires to electrode pads in the sensor electrode extraction structure of FIG. 2 in the order of steps.

【符号の説明】[Explanation of symbols]

21…回路基板、 22…センサ、 23…電子部品、 24…センサ検知部、 25，26，29，30…電極パッド、 27…薄膜ガラス板、 28…接続電線、 31…配線パターン。 21 ... Circuit board, 22 ... Sensor, 23 ... Electronic component, 24 ... Sensor detector, 25,26,29,30 ... Electrode pad, 27 ... Thin glass plate, 28 ... Connection wire, 31 ... Wiring pattern.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 回路基板上に搭載され、上部にセンサ検
出部と第１の電極パッドを有するセンサと、このセンサ
と離間して前記回路基板上に形成された第２の電極パッ
ドと、前記第１の電極パッドと接続する第３の電極パッ
ド、この第３の電極パッドと離間する第４の電極パッ
ド、及び第３・第４の電極パッド同士を接続する配線パ
ターンを有する薄膜板と、この薄膜板の第４の電極パッ
ドと回路基板上の第２の電極パッドを電気的に接続する
接続電線とを具備することを特徴とするセンサ電極取出
し構造。A sensor mounted on a circuit board and having a sensor detecting portion and a first electrode pad on an upper part; a second electrode pad formed on the circuit board at a distance from the sensor; A thin film plate having a third electrode pad connected to the first electrode pad, a fourth electrode pad spaced apart from the third electrode pad, and a wiring pattern connecting the third and fourth electrode pads; A sensor electrode extraction structure, comprising: a fourth electrode pad of the thin film plate; and a connection wire for electrically connecting the second electrode pad on the circuit board.
JP9207844A 1997-08-01 1997-08-01 Sensor electrode extraction structure Withdrawn JPH1154570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9207844A JPH1154570A (en) 1997-08-01 1997-08-01 Sensor electrode extraction structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9207844A JPH1154570A (en) 1997-08-01 1997-08-01 Sensor electrode extraction structure

Publications (1)

Publication Number Publication Date
JPH1154570A true JPH1154570A (en) 1999-02-26

Family

ID=16546471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9207844A Withdrawn JPH1154570A (en) 1997-08-01 1997-08-01 Sensor electrode extraction structure

Country Status (1)

Country Link
JP (1) JPH1154570A (en)

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