JPH11340173A - Slurry for metal film cmp and cmp method using the same - Google Patents
Slurry for metal film cmp and cmp method using the sameInfo
- Publication number
- JPH11340173A JPH11340173A JP628499A JP628499A JPH11340173A JP H11340173 A JPH11340173 A JP H11340173A JP 628499 A JP628499 A JP 628499A JP 628499 A JP628499 A JP 628499A JP H11340173 A JPH11340173 A JP H11340173A
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- metal film
- cmp
- weight
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 111
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 100
- 239000002184 metal Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000007800 oxidant agent Substances 0.000 claims abstract description 43
- 239000002253 acid Substances 0.000 claims abstract description 29
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 43
- 238000005498 polishing Methods 0.000 claims description 28
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 25
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000006061 abrasive grain Substances 0.000 abstract 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 88
- 230000000052 comparative effect Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010979 pH adjustment Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子製造工程
に関し、より詳しくは半導体素子製造工程に使われる金
属膜ＣＭＰ(Chemical Mechanical Polishing)用スラリ
ー及びこれを用いたＣＭＰ方法に関する。The present invention relates to a semiconductor device manufacturing process, and more particularly, to a slurry for a metal film CMP (Chemical Mechanical Polishing) used in a semiconductor device manufacturing process and a CMP method using the same.
【０００２】[0002]
【従来の技術】現在、半導体素子は高集積化、高密度化
によってさらに微細なパターン形成技術を必要とし、配
線の多層化構造を要求する領域も広まっている。これは
半導体素子の表面構造が複雑になり層間膜の段差の程度
が甚だしくなりコンタクトホールの縦横比(Aspect Rati
o)が増えることを意味する。この縦横比の増加はコンタ
クトホール内を望みの膜質で正確に埋没させることを難
しくする。また層間膜の段差は、半導体素子製造工程
中、写真工程で工程不良を発生させる原因になってい
る。2. Description of the Related Art At present, semiconductor devices require finer pattern forming technology due to higher integration and higher density, and the area requiring a multilayered wiring structure is also increasing. This is because the surface structure of the semiconductor device becomes complicated, the level of the interlayer film becomes extremely large, and the aspect ratio of the contact hole (Aspect Rati
o) means to increase. This increase in aspect ratio makes it difficult to accurately bury the inside of the contact hole with the desired film quality. In addition, the step of the interlayer film causes a process defect in a photographic process during a semiconductor device manufacturing process.
【０００３】写真工程はウェーハ上にフォトレジストを
塗布した後、フォトレジスト上に特定回路が形成された
マスクを整列させ、光にマスクを通過させてフォトレジ
ストを露光及び現像することによってウェーハ上にフォ
トレジストパターンを形成させる工程である。写真工程
は、従来のように線幅が広く、低層構造を有する素子の
製造時には問題がなかったが、現在のように微細パター
ンと多層構造により段差が増えることによって、この段
差の上層と下層の露光フォーカスを合わせ難く、正確な
線幅と垂直なプロファイルを有するフォトレジストパタ
ーンを形成するのが難しくなっている。In the photographic process, after a photoresist is coated on a wafer, a mask having a specific circuit formed thereon is aligned on the photoresist, and the photoresist is exposed to light and developed by passing the mask through light. This is a step of forming a photoresist pattern. In the photographic process, there was no problem at the time of manufacturing a device having a wide line width and a low-layer structure as in the past, but as the current step increases due to the fine pattern and the multilayer structure, the upper layer and the lower layer of the step are increased. It is difficult to adjust the exposure focus, and it is difficult to form a photoresist pattern having an accurate line width and a vertical profile.
【０００４】したがって、コンタクトホールの縦横比増
加と段差の発生による工程問題点を解決するためにウェ
ーハの平坦化技術の重要性が台頭された。すなわち、望
みの膜質をコンタクトホール内に埋没させコンタクトホ
ール上部に所定厚さで形成した後、上部に形成された膜
質を平坦化してコンタクトホール内にのみ膜質が存在す
るようにし、段差を人為的に除去するウェーハ全表面に
わたった平坦化、すなわち広域平坦化(Global Planariz
ation)が可能なＣＭＰ技術が開発された。[0004] Therefore, the importance of wafer flattening technology has been increasing in order to solve the process problems caused by the increase in the aspect ratio of contact holes and the occurrence of steps. That is, after a desired film quality is buried in the contact hole and formed at a predetermined thickness on the contact hole, the film quality formed on the upper portion is flattened so that the film quality exists only in the contact hole, and the step is artificially formed. Flattening across the entire surface of the wafer to be removed, that is, global planarization (Global Planariz
)) has been developed.
【０００５】ＣＭＰとは化学的反応と物理的な力を通じ
てウェーハ表面を平坦化する技術である。ＣＭＰ工程の
原理は、素子パターンが形成されているウェーハの全表
面を研磨パッド表面に接触するようにした状態でスラリ
ーを供給し、スラリーとウェーハの全表面を化学的に反
応させながら、同時にウェーハと研磨パッドを相互反対
方向に回転運動させて物理的にウェーハ全表面の凹凸部
分を研磨して平坦化することである。[0005] CMP is a technique for planarizing a wafer surface through chemical reaction and physical force. The principle of the CMP process is that the slurry is supplied while the entire surface of the wafer on which the element pattern is formed is in contact with the polishing pad surface, and the slurry and the entire surface of the wafer are chemically reacted while the wafer is simultaneously And the polishing pad are rotated in opposite directions to physically polish and flatten the uneven portions on the entire surface of the wafer.
【０００６】ＣＭＰ工程は研磨速度(Removal Rate)と平
坦度(Uniformity)が重要であり、これらはＣＭＰ装備の
工程条件、スラリー種類及び研磨パッド種類などにより
決定される。特に、ＣＭＰ工程を遂行する時スラリーの
構成成分、ｐＨ及びイオン濃度などは薄膜との化学的反
応に相当な影響を与える。スラリーは大別して２種類あ
り、酸化膜スラリーと金属膜スラリーに分けられる。酸
化膜スラリーはアルカリ性であり、金属膜スラリーは酸
性を表す。In the CMP process, a polishing rate (Removal Rate) and a flatness (Uniformity) are important, and these are determined by a process condition of the CMP equipment, a kind of slurry and a kind of polishing pad. In particular, when performing the CMP process, components of the slurry, pH, ion concentration, etc., have a considerable effect on the chemical reaction with the thin film. Slurries are roughly classified into two types, and are classified into oxide film slurries and metal film slurries. The oxide film slurry is alkaline, and the metal film slurry is acidic.
【０００７】酸化膜ＣＭＰ工程のメカニズムは、一例で
シリコン酸化膜(SiO2)の場合、シリコン酸化膜の表面が
アルカリ性である酸化膜スラリーとの反応により水分が
浸透し易い水溶性材質に変質される。この変質されたシ
リコン酸化膜に水分が浸透してシリコン酸化膜のシリコ
ンと酸素の連結輪を切る。このように反応が行われたシ
リコン酸化膜層はスラリーに内在された研磨粒子との摩
擦により除去される。The mechanism of the oxide film CMP process is, for example, in the case of a silicon oxide film (SiO 2 ), the surface of the silicon oxide film is transformed into a water-soluble material through which moisture easily penetrates by reaction with an alkaline oxide film slurry. You. Moisture penetrates into the altered silicon oxide film and cuts the connecting ring between silicon and oxygen in the silicon oxide film. The silicon oxide film layer reacted as described above is removed by friction with abrasive particles contained in the slurry.
【０００８】金属膜ＣＭＰのメカニズムはスラリー内の
酸化剤によって金属膜表面上に化学反応がおきて金属酸
化膜を形成させ、このような金属酸化膜はパターン凹凸
部の最も上部からスラリーに内在された研磨粒子との摩
擦により機械的に除去される。The mechanism of the metal film CMP is such that a chemical reaction occurs on the surface of the metal film by an oxidizing agent in the slurry to form a metal oxide film. Such a metal oxide film is included in the slurry from the uppermost portion of the pattern uneven portion. Is mechanically removed by friction with the abrasive particles.
【０００９】金属膜スラリーの構成要素は酸化剤、研磨
粒子、脱イオン水及び酸で構成される。現在、金属膜ス
ラリーに使われる酸化剤としてはFe(NO3)3、KIO3及びH2
O2などがある。The components of the metal film slurry are composed of an oxidizing agent, abrasive particles, deionized water and an acid. At present, oxidizing agents used in metal film slurries include Fe (NO 3 ) 3 , KIO 3 and H 2
O 2 and the like.
【００１０】[0010]
【発明が解決しようとする課題】しかし、KIO3は水に対
する溶解度に制限があり、アルカリ性カリウムによる汚
染を発生させ、Fe(NO3)3は研磨速度が速いが、過度な酸
化作用が発生して鉄の汚染を発生させ、H2O2は研磨速度
が速いが、過度なエッチングによるコンタクトホール上
の金属膜にプラグ凹み(Recess)を発生させるという問題
点があった。However, KIO 3 has a limited solubility in water, causing contamination with alkaline potassium, and Fe (NO 3 ) 3 has a high polishing rate but has an excessive oxidizing effect. However, although H 2 O 2 has a high polishing rate, it has a problem that a recess is formed in a metal film on a contact hole due to excessive etching.
【００１１】本発明の目的は、上述の問題点を克服し、
効果的に半導体素子製造用金属膜を平坦化させる新しい
酸化剤を添加した金属膜ＣＭＰ用スラリー及びこれを用
いたＣＭＰ方法を提供するところにある。An object of the present invention is to overcome the above-mentioned problems,
An object of the present invention is to provide a metal film CMP slurry to which a new oxidizing agent is added to effectively planarize a metal film for manufacturing a semiconductor device, and a CMP method using the same.
【００１２】[0012]
【課題を解決するための手段】本発明の請求１記載の金
属膜ＣＭＰ用スラリーによると、酸化剤H5IO6、研磨粒
子、酸及び脱イオン水を含む。本発明の請求２記載の金
属膜ＣＭＰ用スラリーによると、スラリーは、２〜１０
重量％のH5IO6、２〜１０重量％の研磨粒子、０．０１
〜１．０重量％の酸及び残量として脱イオン水を含んで
なる。本発明の請求３記載の金属膜ＣＭＰ用スラリーに
よると、スラリーに使われるH5IO6の濃度は、０．０１
〜１ｍｏｌｅである。According to the first aspect of the present invention, the slurry for metal film CMP includes an oxidizing agent H 5 IO 6 , abrasive particles, an acid and deionized water. According to the slurry for metal film CMP according to claim 2 of the present invention, the slurry is 2 to 10%.
Wt% of H 5 IO 6, 2 to 10 wt% of the abrasive particles, 0.01
~ 1.0% by weight of acid and the balance deionized water. According to the slurry for metal film CMP according to claim 3 of the present invention, the concentration of H 5 IO 6 used in the slurry is 0.01%.
１1 mole.
【００１３】本発明の請求４記載の金属膜ＣＭＰ用スラ
リーによると、H5IO6の濃度は、０．１〜０．５ｍｏｌ
ｅである。本発明の請求５記載の金属膜ＣＭＰ用スラリ
ーによると、研磨粒子は、その粒径が１００〜３００ｎ
ｍであるアルミナである。本発明の請求６記載の金属膜
ＣＭＰ用スラリーによると、研磨粒子は、その粒径が４
０〜２５０ｎｍであるシリカである。本発明の請求７記
載の金属膜ＣＭＰ用スラリーによると、研磨粒子は、そ
の粒径が１００〜３００ｎｍであるセリウムオキサイド
である。According to the slurry for metal film CMP according to claim 4 of the present invention, the concentration of H 5 IO 6 is 0.1 to 0.5 mol.
e. According to the slurry for metal film CMP according to claim 5 of the present invention, the abrasive particles have a particle diameter of 100 to 300 n.
m is alumina. According to the slurry for metal film CMP according to claim 6 of the present invention, the abrasive particles have a particle size of 4
It is silica having a thickness of 0 to 250 nm. According to the metal film CMP slurry of the present invention, the abrasive particles are cerium oxide having a particle size of 100 to 300 nm.
【００１４】本発明の請求８記載の金属膜ＣＭＰ用スラ
リーによると、酸は、０．０１〜０．５重量％の窒酸を
含む。本発明の請求９記載の金属膜ＣＭＰ用スラリーに
よると、酸は、０．０１〜０．５重量％の硫酸を含む。
本発明の請求１０記載の金属膜ＣＭＰ用スラリーによる
と、酸は、０．０２〜１．０重量％の硫酸と窒酸の混合
物である。本発明の請求１１記載の金属膜ＣＭＰ用スラ
リーによると、スラリーのｐＨは、１〜４である。According to the metal film CMP slurry of the present invention, the acid contains 0.01 to 0.5% by weight of nitric acid. According to the slurry for metal film CMP of the ninth aspect of the present invention, the acid contains 0.01 to 0.5% by weight of sulfuric acid.
According to the slurry for metal film CMP according to claim 10 of the present invention, the acid is a mixture of sulfuric acid and nitric acid of 0.02 to 1.0% by weight. According to the slurry for metal film CMP according to claim 11 of the present invention, the pH of the slurry is 1 to 4.
【００１５】本発明の請求１２記載の金属膜ＣＭＰ用ス
ラリーによると、スラリーに０〜３重量％の水酸化アン
モニウムがさらに添加される。本発明の請求１３記載の
金属膜ＣＭＰ用スラリーによると、金属膜は、アルミニ
ウム、タングステン、チタン、銅またはこれらの合金か
らなる。本発明の請求１４記載の金属膜ＣＭＰ用スラリ
ーによると、スラリーのH5IO6は４重量％、研磨粒子は
４重量％である。本発明の請求１５記載の金属膜ＣＭＰ
方法によると、ＣＭＰを遂行する金属膜に酸化剤H5I
O6、研磨粒子、酸及び脱イオン水を含むスラリーを供給
する段階と、スラリーと共に金属膜の表面を化学的及び
機械的に研磨する段階とを含む。According to the metal film CMP slurry of the present invention, 0 to 3% by weight of ammonium hydroxide is further added to the slurry. According to the metal film CMP slurry of the present invention, the metal film is made of aluminum, tungsten, titanium, copper or an alloy thereof. According to the metal film CMP slurry according 14, wherein the present invention, H 5 IO 6 4 wt% of the slurry, the abrasive particles is 4% by weight. The metal film CMP according to claim 15 of the present invention.
According to the method, the oxidizing agent H 5 I is added to the metal film performing the CMP.
Supplying a slurry containing O 6 , abrasive particles, acid and deionized water; and chemically and mechanically polishing the surface of the metal film together with the slurry.
【００１６】本発明の請求１６記載の金属膜ＣＭＰ方法
によると、スラリーは、２〜１０重量％のH5IO6、２〜
１０重量％の研磨粒子、０．０１〜１．０重量％の酸、
及び残量として脱イオン水を含んでなる。本発明の請求
１７記載の金属膜ＣＭＰ方法によると、スラリーに使わ
れるH5IO 6の濃度は、０．０１〜１ｍｏｌｅである。The metal film CMP method according to claim 16 of the present invention.
According to the slurry, 2 to 10% by weight of HFiveIO6, 2
10% by weight of abrasive particles, 0.01-1.0% by weight of acid,
And deionized water as the remaining amount. Claim of the invention
According to the metal film CMP method described in 17, it is used for slurry
HFiveIO 6Is 0.01 to 1 mole.
【００１７】本発明の請求１８記載の金属膜ＣＭＰ方法
によると、H5IO6の濃度は、０．１〜０．５ｍｏｌｅで
ある。本発明の請求１９記載の金属膜ＣＭＰ方法による
と、スラリーのｐＨは、１〜４である。本発明の請求２
０記載の金属膜ＣＭＰ方法によると、スラリーに０〜３
重量％の水酸化アンモニウムがさらに添加される。本発
明の請求２１記載の金属膜ＣＭＰ方法によると、金属膜
はアルミニウム、タングステン、チタン、銅またはこれ
らの合金からなる。According to the metal film CMP method of the present invention, the concentration of H 5 IO 6 is 0.1 to 0.5 mole. According to the metal film CMP method of the nineteenth aspect of the present invention, the slurry has a pH of 1 to 4. Claim 2 of the present invention
According to the metal film CMP method described in No. 0, the slurry
% By weight of ammonium hydroxide is further added. According to the metal film CMP method of the present invention, the metal film is made of aluminum, tungsten, titanium, copper or an alloy thereof.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態を示す
実施例について説明する。本発明は半導体装置製造過程
において半導体基板上の導電層として使用する金属膜の
ＣＭＰ工程のためのスラリー及びこれを用いたＣＭＰ方
法に関し実施される。Embodiments of the present invention will be described below. The present invention is embodied in a slurry for a CMP process of a metal film used as a conductive layer on a semiconductor substrate in a semiconductor device manufacturing process, and a CMP method using the slurry.
【００１９】金属膜ＣＭＰ工程のメカニズムはスラリー
に含まれた酸化剤によって金属膜表面上に化学反応がお
きて金属酸化膜が形成され、このような金属酸化膜はパ
ターン凹凸部の最も上部から研磨粒子との摩擦により機
械的に除去される過程でなされる。The mechanism of the metal film CMP process is such that a chemical reaction occurs on the surface of the metal film by the oxidizing agent contained in the slurry to form a metal oxide film, and such a metal oxide film is polished from the uppermost portion of the pattern uneven portion. This is done during the process of mechanical removal by friction with the particles.
【００２０】本発明による金属膜ＣＭＰ用スラリーは酸
化剤H5IO6、研磨粒子、酸及び脱イオン水を含んでな
り、スラリーは２〜１０重量％のH5IO6、２〜１０重量
％の研磨粒子、０．０１〜１．０重量％の酸及び残量と
して脱イオン水を含む。酸化剤はＣＭＰが遂行される金
属膜の全表面を酸化させる程の濃度を持つべきであり、
本発明に使われた酸化剤H5IO6の濃度は０．０１〜１ｍ
ｏｌｅであって、望ましくは０．１〜０．５ｍｏｌｅで
ある。The slurry for metal film CMP according to the present invention comprises oxidizing agent H 5 IO 6 , abrasive particles, acid and deionized water, and the slurry comprises 2-10% by weight of H 5 IO 6 , 2-10% by weight. Abrasive particles, from 0.01 to 1.0% by weight of acid and the balance deionized water. The oxidizing agent should have a concentration sufficient to oxidize the entire surface of the metal film on which CMP is performed,
The concentration of the oxidizing agent H 5 IO 6 used in the present invention is 0.01 to 1 m.
ole, desirably 0.1 to 0.5 mole.
【００２１】研磨粒子はＣＭＰ工程時金属膜表面にスク
ラッチを誘発しないべきである。したがって、研磨粒子
の粒径は適正な大きさを有しなければならない。スラリ
ーは特定研磨粒子に限定されず、一般的によく知られた
アルミナ、シリカまたはセリウムオキサイドを使用でき
る。すなわち、粒径が１００〜３００ｎｍであるアルミ
ナ、粒径が４０〜２５０ｎｍであるシリカまたは粒径が
１００〜３００ｎｍであるセリウムオキサイドを選択し
て使用できる。The abrasive particles should not induce scratches on the metal film surface during the CMP process. Therefore, the particle size of the abrasive particles must have an appropriate size. The slurry is not limited to specific abrasive particles, and may use generally well-known alumina, silica or cerium oxide. That is, alumina having a particle size of 100 to 300 nm, silica having a particle size of 40 to 250 nm, or cerium oxide having a particle size of 100 to 300 nm can be selected and used.
【００２２】スラリーに含まれる酸のｐＨは研磨速度に
影響を及ぼすことと知られているので、適正な値を有し
なければならない。酸は０．０１〜０．５重量％の窒酸
(HNO3)、０．０１〜０．５重量％の硫酸(H 2SO4)または
０．０２〜１．０重量％の硫酸(H2SO4)と窒酸(HNO3）の
混合物を使用し、スラリーのｐＨは１〜４が望ましい。
スラリーには０〜３重量％の水酸化アンモニウム(NH4O
H）がさらに添加することができ、水酸化アンモニウム
はスラリーのｐＨ調節をするために使われる。The pH of the acid contained in the slurry depends on the polishing rate.
Has the right value because it is known to affect
There must be. The acid is 0.01-0.5% by weight nitric acid
(HNOThree), 0.01-0.5% by weight sulfuric acid (H TwoSOFour) Or
0.02-1.0% by weight sulfuric acid (HTwoSOFour) And nitric acid (HNOThree)of
A mixture is used, and the pH of the slurry is preferably 1 to 4.
The slurry contains 0-3% by weight of ammonium hydroxide (NHFourO
H) can be further added, ammonium hydroxide
Is used to adjust the pH of the slurry.
【００２３】通常、金属膜ＣＭＰ用スラリーに添加され
る酸化剤の評価は大別して二つの側面で見ることができ
る。第一に、いかほど多量の金属を酸化させるのか、第
二に、いかほど速く金属を酸化させるのか、である。金
属膜ＣＭＰ用スラリーが金属膜を酸化させる能力は、酸
化剤により金属膜が酸化される時、金属膜表面の電子の
移動を観察すると分かる。金属膜表面の電子の移動がわ
かるテストとしては分極曲線(Polarization Curve）の
測定を通じた腐蝕電流密度(Corrosion CurrentDensit
y）の比較とポテンチオダイナミックテスト(Potentiody
namic Test)の２種があり、腐蝕電流密度値から金属膜
表面に生成される表面酸化量がわかって、ポテンチオダ
イナミックテストからは金属膜表面の酸化速度が分か
る。Generally, the evaluation of the oxidizing agent added to the slurry for metal film CMP can be roughly classified into two aspects. First, how much of the metal to oxidize, and second, how fast to oxidize the metal. The ability of the slurry for metal film CMP to oxidize the metal film can be understood by observing the movement of electrons on the surface of the metal film when the metal film is oxidized by the oxidizing agent. As a test to determine the electron transfer on the metal film surface, the corrosion current density (Corrosion Current Densit) through the measurement of the polarization curve (Polarization Curve)
y) comparison and potentiodynamic test (Potentiody
The surface oxidation amount generated on the surface of the metal film is known from the corrosion current density value, and the oxidation speed on the surface of the metal film is known from the potentiodynamic test.
【００２４】腐蝕電流密度値は、酸化剤と金属膜が一定
な電位を表し電気化学的に平衡をなす状態で金属膜表面
に現れる電流値である。ポテンチオダイナミックテスト
は、金属膜が酸化剤と接触し始める時から現れる電流の
強さを時間によって測定することである。電流の値が時
間によって急激に減少する場合は金属膜が酸化剤により
急激に金属酸化の形態に変わったりイオン形態に溶ける
ために電流が金属表面から発生されたことと見ることが
でき、電流の値が緩慢に減少する場合は金属と酸化剤の
反応速度が遅い場合と見ることができる。The corrosion current density value is a current value that appears on the surface of the metal film in a state where the oxidizing agent and the metal film have a constant potential and are in an electrochemically balanced state. The potentiodynamic test measures the intensity of a current appearing from the time when a metal film starts to come into contact with an oxidizing agent by time. If the value of the current decreases rapidly with time, it can be considered that the current is generated from the metal surface because the metal film is rapidly changed to the form of metal oxidation or dissolved in the ionic form by the oxidizing agent. If the value decreases slowly, it can be considered that the reaction rate between the metal and the oxidizing agent is low.
【００２５】本発明の金属膜ＣＭＰ用スラリーに適用し
ようとする酸化剤の選択において、初めには、文献から
標準還元電位が高いものを選択し、一次的にK2S2O8、Tl
(NO3)3、Ce(NO3)3及びH5IO6などがあった。この中でK2S
2O8は水に対する溶解度の制限で適用が不可能であっ
て、Tl(NO3)3は安全上の問題で適用が不可能なことにな
った。最終的に適用可能な酸化剤はH5IO6と定め、酸化
剤H5IO6の金属膜に対する酸化能力を調べて見るため従
来に商用化されて金属膜ＣＭＰ用スラリーとして使われ
ているFe(NO3)3、KIO3と酸化剤H5IO6の分極曲線の測定
とポテンチオダイナミックテストを実施して比較した。In selecting an oxidizing agent to be applied to the slurry for metal film CMP of the present invention, one having a high standard reduction potential is selected from the literature, and K 2 S 2 O 8 , Tl
(NO 3 ) 3 , Ce (NO 3 ) 3 and H 5 IO 6 . Where K 2 S
2 O 8 was not applicable due to water solubility limitations and Tl (NO 3 ) 3 was not applicable due to safety concerns. Finally applicable oxidant defined as H 5 IO 6, Fe being used as commercialized by slurry for a metal film CMP in conventional to see by examining the oxidative capacity with respect to the metal film of oxidizing agent H 5 IO 6 The polarization curves of (NO 3 ) 3 , KIO 3 and the oxidizing agent H 5 IO 6 were measured and compared by performing a potentiodynamic test.
【００２６】図１を参照すると、X軸は金属膜で現れる
単位面積当りの電流を表し、Y軸は外部から与える電位
である。分極曲線から分極抵抗法を用いて腐蝕電流密度
を計算して比較すると、H5IO6が腐蝕電流密度が最も高
く、次にFe(NO3)3、KIO3の順に表われた。すなわち、H5
IO6が金属膜に対してFe(NO3)3、KIO3より多量の金属酸
化量を形成させることが分かった。Referring to FIG. 1, the X-axis represents a current per unit area appearing in the metal film, and the Y-axis represents an externally applied potential. When the corrosion current density was calculated from the polarization curve using the polarization resistance method and compared, H 5 IO 6 had the highest corrosion current density, followed by Fe (NO 3 ) 3 and KIO 3 . That is, H 5
It was found that IO 6 caused the metal film to form a larger amount of metal oxide than Fe (NO 3 ) 3 and KIO 3 .
【００２７】次に酸化速度を比較するためにポテンチオ
ダイナミックテストを実施して比較した。図２を参照す
ると、時間の経過によってFe(NO3)3電流密度の減少位置
がさらに早く現れることが分かる。その結果Fe(NO3)3の
酸化速度が最も速く、次にH5IO6、KIO3の順に表われ
た。したがって、本発明に使われる酸化剤H5IO6は結果
的に金属膜の酸化側面では実用化されているKIO3より優
秀なことが分かった。図３は比較例のスラリーと酸化剤
としてH5IO6を含めた本発明の実施例であるスラリーを
使用して所定のタングステン薄膜が蒸着されたウェーハ
をＣＭＰ工程を遂行した後、各々のスラリーに対する研
磨速度と平坦度を測定したことを表すグラフである。Next, a potentiodynamic test was performed to compare the oxidation rates. Referring to FIG. 2, it can be seen that the position where the Fe (NO 3 ) 3 current density decreases appears earlier with the passage of time. As a result, the oxidation rate of Fe (NO 3 ) 3 was the highest, followed by H 5 IO 6 and KIO 3 . Thus, oxidant H 5 IO 6 used in the present invention has consequently found that excellent than KIO 3 in practical use in the oxidation side of the metal film. FIG. 3 illustrates a CMP process using a slurry of a comparative example and a slurry according to an embodiment of the present invention including H 5 IO 6 as an oxidizing agent. 4 is a graph showing that a polishing rate and flatness of the sample were measured.
【表１】 [Table 1]
【００２８】表１を参照すると、比較例Aは酸化剤を含
まず、比較例Bは実用化されているKIO3を酸化剤として
使用するスラリーであり、比較例Cは実用化されているF
e(NO3) 3を酸化剤として使用するスラリーである。実施
例は２〜１０重量％の０．１〜０．５ｍｏｌｅ濃度を有
するH5IO6、２〜１０重量％の粒径が１００〜３００ｎ
ｍであるアルミナ、０．０１〜０．５重量％の窒酸、
０．０１〜０．５重量％の硫酸、０．０１〜１．０重量
％の酸及び残量として脱イオン水を含む。H5IO6は４重
量％であることが望ましく、アルミナは４重量％が含ま
れていることが望ましい。また、スラリーにはｐＨ調節
用で０〜３重量％の水酸化アンモニウムを含めた。スラ
リーのｐＨは１〜４を表す。Referring to Table 1, Comparative Example A contained an oxidizing agent.
First, Comparative Example B is a commercially available KIOThreeAs oxidant
Comparative Example C is a slurry to be used, and
e (NOThree) ThreeIs a slurry using as an oxidizing agent. Implementation
Examples have 0.1 to 0.5 mole concentration of 2 to 10% by weight.
HFiveIO62 to 10% by weight particle size 100 to 300n
alumina, 0.01-0.5% by weight nitric acid,
0.01-0.5% by weight sulfuric acid, 0.01-1.0% by weight
% Acid and the balance as deionized water. HFiveIO6Is fourfold
%, Preferably 4% by weight alumina
Is desirable. In addition, pH adjustment for slurry
0 to 3% by weight of ammonium hydroxide. Sura
The pH of Lee represents 1-4.
【００２９】図３を参照すると、酸化剤を含まない比較
例Aは研磨速度があまりにも遅く、Fe(NO3)3を基本酸化
剤とする比較例Cは研磨速度が速いが、平坦度の調節が
難しい程に悪いことが分かった。通常、ＣＭＰ工程時金
属膜の研磨速度は２０００〜４０００Å／ｍｉｎを有す
る。H5IO6を酸化剤として含めて製造した実施例を使用
した場合、KIO3酸化剤を使用した比較例Bの結果と類似
な値が出てくることがわかった。それゆえに酸化剤とし
てH5IO6を使用するスラリーは実用化されているスラリ
ーを代替して工程に使用できる研磨速度と平板度を有す
る。Referring to FIG. 3, Comparative Example A containing no oxidizing agent has a too low polishing rate, and Comparative Example C using Fe (NO 3 ) 3 as the basic oxidizing agent has a high polishing rate, but has a low flatness. It turned out to be too bad to adjust. Usually, the polishing rate of the metal film at the time of the CMP process is 2000 to 4000 ° / min. It was found that when an example in which H 5 IO 6 was used as an oxidizing agent was used, a value similar to the result of Comparative Example B using a KIO 3 oxidizing agent was obtained. Therefore, the slurry using H 5 IO 6 as the oxidizing agent has a polishing rate and flatness that can be used in the process instead of the slurry that has been practically used.
【００３０】本発明による金属膜ＣＭＰ方法は図５を参
照すると、まず酸化剤H5IO6、研磨粒子、酸及び脱イオ
ン水を含むスラリーをＣＭＰ工程を遂行する金属膜に供
給する段階を実施する。次に、図４を参照すると、ポリ
ウレタン材質の研磨パッド１２が取り付けられた研磨テ
ーブル１０、研磨液１４が供給される研磨パッド１２上
でウェーハ１６を固定させて回転させるウェーハキャリ
ア２０、ウェーハキャリア２０によりＣＭＰ工程が構成
される反対側に位置し、研磨パッド１２をコンディショ
ニングさせるコンディショニングディスク２４が取り付
けられたコンディショナ２２を含んで構成されるＣＭＰ
装置１にＣＭＰ工程を遂行する金属膜１８が形成された
ウェーハ１６を研磨パッド１２と接触するようにウェー
ハキャリア２０に固定させた後、研磨パッド１２上にス
ラリー１４を供給する。Referring to FIG. 5, the metal film CMP method according to the present invention includes a step of supplying a slurry containing an oxidizing agent H 5 IO 6 , abrasive particles, acid and deionized water to a metal film for performing a CMP process. I do. Next, referring to FIG. 4, a polishing table 10 on which a polishing pad 12 made of polyurethane material is mounted, a wafer carrier 20 for fixing and rotating a wafer 16 on the polishing pad 12 to which a polishing liquid 14 is supplied, and a wafer carrier 20 , A CMP step including a conditioner 22 to which a conditioning disk 24 for conditioning the polishing pad 12 is attached.
After the wafer 16 on which the metal film 18 for performing the CMP process is formed is fixed to the wafer carrier 20 so as to be in contact with the polishing pad 12, the slurry 14 is supplied onto the polishing pad 12.
【００３１】スラリーは２〜１０重量％のH5IO6、２〜
１０重量％の研磨粒子、０．０１〜１．０重量％の酸及
び残量として脱イオン水を含んでなされる。スラリーに
使われるH5IO6の濃度は０．０１〜１ｍｏｌｅであり、
望ましくは０．１〜０．５ｍｏｌｅである。The slurry contains 2 to 10% by weight of H 5 IO 6 ,
It comprises 10% by weight of abrasive particles, 0.01 to 1.0% by weight of acid and the balance deionized water. The concentration of H 5 IO 6 used in the slurry is 0.01 to 1 mole,
Desirably, it is 0.1 to 0.5 mole.
【００３２】スラリーは特定研磨粒子に限定されず、一
般的によく知られたアルミナ、シリカまたはセリウムオ
キサイド(CeO2)が使用できる。すなわち、粒径が１００
〜３００ｎｍであるアルミナ(Al2O3)、粒径が４０〜２
５０ｎｍであるシリカ(SiO2)または粒径が１００〜３０
０ｎｍであるセリウムオキサイド(CeO2)を選択して使用
できる。酸は０．０１〜０．５重量％の窒酸(HNO3)、
０．０１〜０．５重量％の硫酸(H2SO4)または０．０２
〜１．０重量％の硫酸(H2SO4)と窒酸(HNO3）の混合物が
使用できる。スラリー１４のｐＨは１〜４が望ましい。
スラリー１４にはｐＨの調節のために０〜３重量％の水
酸化アンモニウム(NH4OH)をさらに添加することができ
る。The slurry is not limited to specific abrasive particles, and generally well-known alumina, silica or cerium oxide (CeO 2 ) can be used. That is, when the particle size is 100
Alumina (Al 2 O 3 ) having a particle size of 40 to 2 nm
Silica (SiO 2 ) of 50 nm or particle size of 100 to 30
Cerium oxide (CeO 2 ) having a thickness of 0 nm can be selectively used. The acid is 0.01-0.5% by weight of nitric acid (HNO 3 ),
0.01-0.5 wt% of sulfuric acid (H 2 SO 4) or 0.02
Mixture of 1.0% by weight of nitric acid and sulfuric acid (H 2 SO 4) (HNO 3) can be used. The pH of the slurry 14 is desirably 1 to 4.
To the slurry 14, 0 to 3% by weight of ammonium hydroxide (NH 4 OH) may be further added to adjust the pH.
【００３３】引続きスラリーと共に金属膜の表面をＣＭ
Ｐする段階として、所定の回転速度でウェーハキャリア
２０と研磨パッド１２を相互反対方向に回転させて金属
膜１８をＣＭＰする。ＣＭＰ工程により金属膜１８は平
坦化されて後続工程中、写真工程でウェーハ全表面に同
一な焦点を整列させることができ、均一度が向上された
プロファイルを有するフォトレジストパターンを得るこ
とができる。また縦横比が高い金属膜プラグを形成する
ことができる。金属膜はアルミニウム、タングステン、
チタン、銅またはこれらの合金であり得るし、単にこれ
らに限定されないことは当然である。Subsequently, the surface of the metal film was mixed with the slurry using CM.
In the step of performing P, the metal film 18 is subjected to CMP by rotating the wafer carrier 20 and the polishing pad 12 at opposite directions at a predetermined rotation speed. The metal layer 18 is planarized by the CMP process, so that the same focus can be aligned on the entire surface of the wafer in the photographic process during the subsequent process, and a photoresist pattern having a profile with improved uniformity can be obtained. Further, a metal film plug having a high aspect ratio can be formed. Metal film is aluminum, tungsten,
Of course, it can be, but is not limited to, titanium, copper or alloys thereof.
【００３４】[0034]
【発明の効果】以上述べたように、本発明のスラリーは
金属膜ＣＭＰ工程に使用できる研磨速度と平坦度を有
し、表面欠点と金属汚染を防止できる効果がある。以上
で本発明は記載された具体例についてだけ詳しく説明し
たが、本発明の技術思想の範囲内で多様な変形及び修正
が可能なのは当業者にとって明白なことであり、このよ
うな変形及び修正が特許請求範囲に属することは当然な
ことである。As described above, the slurry of the present invention has a polishing rate and flatness that can be used in the metal film CMP process, and has the effect of preventing surface defects and metal contamination. Although the present invention has been described in detail with reference only to the specific examples described above, it is apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea of the present invention. Naturally, it belongs to the claims.
【図１】本発明に使用した酸化剤と従来使用中の酸化剤
の分極曲線を表すグラフである。FIG. 1 is a graph showing polarization curves of an oxidizing agent used in the present invention and an oxidizing agent conventionally used.
【図２】本発明に使用した酸化剤と従来使用中の酸化剤
のポテンチオダイナミックテストを表すグラフである。FIG. 2 is a graph showing a potentiodynamic test of an oxidizing agent used in the present invention and an oxidizing agent conventionally used.
【図３】従来に使用中のスラリーと、酸化剤としてH5IO
6を含めた本発明のスラリーの研磨速度と平坦度を表す
グラフである。FIG. 3 shows a slurry currently used and H 5 IO as an oxidizing agent.
6 is a graph showing the polishing rate and flatness of the slurry of the present invention including No. 6 .
【図４】ＣＭＰ装置を表す模式図である。FIG. 4 is a schematic diagram illustrating a CMP apparatus.
【図５】本発明によるＣＭＰ方法を表す工程順序図であ
る。FIG. 5 is a process sequence diagram illustrating a CMP method according to the present invention.
１ ＣＭＰ装置 １０ 研磨テーブル １２ 研磨パッド １４ 研磨液 １６ ウェーハ １８ 金属膜 ２０ ウェーハキャリア ２２ コンディショナ ２４ コンディショニングディスク DESCRIPTION OF SYMBOLS 1 CMP apparatus 10 Polishing table 12 Polishing pad 14 Polishing liquid 16 Wafer 18 Metal film 20 Wafer carrier 22 Conditioner 24 Conditioning disk
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年５月７日[Submission date] May 7, 1999
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２８[Correction target item name] 0028
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２８】表１を参照すると、比較例Aは酸化剤を含
まず、比較例Bは実用化されているKIO3を酸化剤として
使用するスラリーであり、比較例Cは実用化されているF
e(NO3) 3を酸化剤として使用するスラリーである。実施
例は２〜１０重量％の０．１〜０．５ｍｏｌｅ濃度を有
するH5IO6、２〜１０重量％の粒径が１００〜３００ｎ
ｍであるアルミナ、０．０１〜１．０重量％の酸及び残
量として脱イオン水を含む。H5IO6は４重量％であるこ
とが望ましく、アルミナは４重量％であることが望まし
く、酸は０．０１〜０．５重量％の窒酸または０．０１
〜０．５重量％の硫酸または０．０１〜１．０重量%の
硫酸と窒酸の混合物であることが望ましい。また、スラ
リーにはｐＨ調節用で０〜３重量％の水酸化アンモニウ
ムを含めた。スラリーのｐＨは１〜４を表す。Referring to Table 1, Comparative Example A contained an oxidizing agent.
First, Comparative Example B is a commercially available KIOThreeAs oxidant
Comparative Example C is a slurry to be used, and
e (NOThree) ThreeIs a slurry using as an oxidizing agent. Implementation
Examples have 0.1 to 0.5 mole concentration of 2 to 10% by weight.
HFiveIO6,Particle size of 2-10% by weight is 100-300n
alumina, 0.01 to 1.0% by weight of acidAnd the rest
Includes deionized water as quantity. HFiveIO6Is 4% by weight
And preferablyAlumina is preferably 4% by weight.
The acid is 0.01 to 0.5% by weight of nitric acid or 0.01% by weight.
~ 0.5 wt% sulfuric acid or 0.01-1.0 wt%
Desirably, it is a mixture of sulfuric acid and nitric acid.Also,
Lee has 0 to 3% by weight of ammonium hydroxide for pH adjustment.
Included. The pH of the slurry represents 1-4.
フロントページの続き (72)発明者 朴 濟應 大韓民国京畿道水原市勸善區勸善洞寳星ア パート609−1102号Continuing on the front page (72) Inventor Park Jae-seo, Korea
Claims (21)
ン水を含む金属膜ＣＭＰ用スラリー。1. A slurry for metal film CMP comprising an oxidizing agent H 5 IO 6 , abrasive particles, acid and deionized water.
6、２〜１０重量％の研磨粒子、０．０１〜１．０重量
％の酸及び残量として脱イオン水を含んでなることを特
徴とする請求項１に記載の金属膜ＣＭＰ用スラリー。2. The slurry comprises 2 to 10% by weight of H 5 IO
6. The slurry for metal film CMP according to claim 1, comprising 2 to 10% by weight of abrasive particles, 0.01 to 1.0% by weight of acid, and deionized water as a remaining amount.
は、０．０１〜１ｍｏｌｅであることを特徴とする請求
項１に記載の金属膜ＣＭＰ用スラリー。3. The slurry according to claim 1, wherein the concentration of H 5 IO 6 used in the slurry is 0.01 to 1 mole.
ｏｌｅであることを特徴とする請求項３に記載の金属膜
ＣＭＰ用スラリー。4. The concentration of H 5 IO 6 is 0.1 to 0.5 m
The slurry for metal film CMP according to claim 3, wherein the slurry is ole.
００ｎｍであるアルミナであることを特徴とする請求項
１に記載の金属膜ＣＭＰ用スラリー。5. The abrasive particles have a particle size of 100 to 3
The slurry for metal film CMP according to claim 1, wherein the slurry is alumina having a thickness of 00 nm.
０ｎｍであるシリカであることを特徴とする請求項１に
記載の金属膜ＣＭＰ用スラリー。6. The abrasive particles have a particle size of 40 to 25.
The slurry for metal film CMP according to claim 1, wherein the slurry is 0 nm silica.
００ｎｍであるセリウムオキサイドであることを特徴と
する請求項１に記載の金属膜ＣＭＰ用スラリー。7. The abrasive particles have a particle size of 100 to 3
The slurry for metal film CMP according to claim 1, wherein the slurry is cerium oxide having a thickness of 00 nm.
酸を含むことを特徴とする請求項２に記載の金属膜ＣＭ
Ｐ用スラリー。8. The metal film CM according to claim 2, wherein the acid contains 0.01 to 0.5% by weight of nitric acid.
Slurry for P.
酸を含むことを特徴とする請求項２に記載の金属膜ＣＭ
Ｐ用スラリー。9. The metal film CM according to claim 2, wherein the acid contains 0.01 to 0.5% by weight of sulfuric acid.
Slurry for P.
硫酸と窒酸の混合物であることを特徴とする請求項２に
記載の金属膜ＣＭＰ用スラリー。10. The slurry according to claim 2, wherein the acid is a mixture of sulfuric acid and nitric acid of 0.02 to 1.0% by weight.
ことを特徴とする請求項１に記載の金属膜ＣＭＰ用スラ
リー。11. The slurry according to claim 1, wherein the slurry has a pH of 1 to 4.
アンモニウムがさらに添加されることを特徴とする請求
項１１に記載の金属膜ＣＭＰ用スラリー。12. The slurry according to claim 11, wherein 0 to 3% by weight of ammonium hydroxide is further added to the slurry.
ステン、チタン、銅またはこれらの合金からなることを
特徴とする請求項１に記載の金属膜ＣＭＰ用スラリー。13. The slurry according to claim 1, wherein the metal film is made of aluminum, tungsten, titanium, copper, or an alloy thereof.
磨粒子は４重量％であることを特徴とする請求項２に記
載の金属膜ＣＭＰ用スラリー。14. The slurry for metal film CMP according to claim 2, wherein H 5 IO 6 of the slurry is 4% by weight and abrasive particles are 4% by weight.
6、研磨粒子、酸及び脱イオン水を含むスラリーを供給
する段階と、 前記スラリーと共に金属膜の表面を化学的及び機械的に
研磨する段階と、 を含むことを特徴とする金属膜ＣＭＰ方法。15. An oxidizing agent H 5 IO is applied to a metal film performing CMP.
6. A metal film CMP method, comprising: supplying a slurry containing abrasive particles, acid and deionized water; and chemically and mechanically polishing the surface of the metal film together with the slurry.
IO6、２〜１０重量％の研磨粒子、０．０１〜１．０重
量％の酸、及び残量として脱イオン水を含んでなること
を特徴とする請求項１５に記載の金属膜ＣＭＰ方法。16. The slurry comprises 2 to 10% by weight of H 5.
IO 6, 2 to 10 wt% of the abrasive particles, 0.01 to 1.0 wt% acid, and the metal film CMP method according to claim 15, characterized in that it comprises deionized water as the remaining amount .
は、０．０１〜１ｍｏｌｅであることを特徴とする請求
項１５に記載の金属膜ＣＭＰ方法。17. The metal film CMP method according to claim 15, wherein the concentration of H 5 IO 6 used in the slurry is 0.01 to 1 mole.
ｍｏｌｅであることを特徴とする請求項１７に記載の金
属膜ＣＭＰ方法。18. The concentration of the H 5 IO 6 is 0.1 to 0.5.
18. The metal film CMP method according to claim 17, wherein the method is mole.
ことを特徴とする請求項１５に記載の金属膜ＣＭＰ方
法。19. The metal film CMP method according to claim 15, wherein the slurry has a pH of 1 to 4.
アンモニウムがさらに添加されることを特徴とする請求
項１９に記載の金属膜ＣＭＰ方法。20. The method according to claim 19, wherein 0 to 3% by weight of ammonium hydroxide is further added to the slurry.
テン、チタン、銅またはこれらの合金からなることを特
徴とする請求項１５に記載の金属膜ＣＭＰ方法。21. The metal film CMP method according to claim 15, wherein the metal film is made of aluminum, tungsten, titanium, copper, or an alloy thereof.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980017255A KR19990085105A (en) | 1998-05-13 | 1998-05-13 | Slurry for metal film CMP and CMP method using the same |
| KR1998P17255 | 1998-05-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11340173A true JPH11340173A (en) | 1999-12-10 |
Family
ID=19537313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP628499A Pending JPH11340173A (en) | 1998-05-13 | 1999-01-13 | Slurry for metal film cmp and cmp method using the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11340173A (en) |
| KR (1) | KR19990085105A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000233361A (en) * | 1998-12-14 | 2000-08-29 | Matsushita Electronics Industry Corp | Polishing liquid for chemicomechanical polishing and polishing method therefor |
| US7101801B2 (en) * | 2002-11-12 | 2006-09-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device using chemical mechanical polishing |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100370873B1 (en) * | 2000-04-28 | 2003-02-05 | 미츠이 긴조쿠 고교 가부시키가이샤 | Process for preparing glass substrate for self-recording medium |
| KR100407296B1 (en) * | 2000-12-18 | 2003-11-28 | 주식회사 하이닉스반도체 | Method for chemical mechanical polishing of titanium-aluminium-nitride |
| KR100444307B1 (en) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | Method for manufacturing of metal line contact plug of semiconductor device |
| KR100570122B1 (en) * | 2003-05-12 | 2006-04-11 | 학교법인 한양학원 | Slurry composition for chemical mechanical polishing capable of compensating nanotopography effect and method of planarizing surface of semiconductor device using the same |
| KR100641348B1 (en) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Slurry for cmp and method of fabricating the same and method of polishing substrate |
-
1998
- 1998-05-13 KR KR1019980017255A patent/KR19990085105A/en not_active Application Discontinuation
-
1999
- 1999-01-13 JP JP628499A patent/JPH11340173A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000233361A (en) * | 1998-12-14 | 2000-08-29 | Matsushita Electronics Industry Corp | Polishing liquid for chemicomechanical polishing and polishing method therefor |
| US7101801B2 (en) * | 2002-11-12 | 2006-09-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device using chemical mechanical polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990085105A (en) | 1999-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4074434B2 (en) | Processing fluid and method for modifying a structured wafer suitable for semiconductor manufacturing | |
| US6602117B1 (en) | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods | |
| JP3899456B2 (en) | Polishing composition and polishing method using the same | |
| JP4489191B2 (en) | Planarizing composition for metal film removal | |
| JP3371775B2 (en) | Polishing method | |
| US6346144B1 (en) | Chemical-mechanical polishing slurry | |
| JP3308476B2 (en) | Polishing method for semiconductor wafer | |
| KR20000035287A (en) | Semiconductor device and method for manufacturing the same | |
| JP2002511650A (en) | Slurry for polishing chemical-mechanical metal surfaces | |
| EP1489650B1 (en) | Polishing composition and method for forming wiring structure | |
| JP3192968B2 (en) | Polishing liquid for copper-based metal and method for manufacturing semiconductor device | |
| JP2011020208A (en) | Cmp polishing liquid, and polishing method using the same | |
| KR20070112469A (en) | Semiconductor device and process for producing the same | |
| Zhang et al. | Effect of chelating agent and ammonium dodecyl sulfate on the interfacial behavior of copper CMP for GLSI | |
| JPH11340173A (en) | Slurry for metal film cmp and cmp method using the same | |
| JP5090925B2 (en) | Polishing liquid for polishing aluminum film and polishing method of aluminum film using the same | |
| JP2000235965A (en) | Polishing method | |
| WO2008151918A1 (en) | A process for polishing patterned and unstructured surfaces of materials and an aqueous polishing agent to be used in the said process | |
| US20060084271A1 (en) | Systems, methods and slurries for chemical mechanical polishing | |
| TWI742279B (en) | Substrate polishing device and substrate polishing method | |
| US20020125460A1 (en) | Compositions for chemical mechanical planarization of tungsten | |
| JP7210823B2 (en) | Polishing liquid, polishing method and method for manufacturing semiconductor parts | |
| JP3516157B2 (en) | Polishing liquid and polishing method for chemical mechanical polishing | |
| JP2004193488A (en) | Polishing solution for barrier metal and polishing method | |
| JP2008098369A (en) | Polishing method |