JPH11329808A - Resistance adjusting method of infrared-ray detecting element - Google Patents
Resistance adjusting method of infrared-ray detecting elementInfo
- Publication number
- JPH11329808A JPH11329808A JP10128617A JP12861798A JPH11329808A JP H11329808 A JPH11329808 A JP H11329808A JP 10128617 A JP10128617 A JP 10128617A JP 12861798 A JP12861798 A JP 12861798A JP H11329808 A JPH11329808 A JP H11329808A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- resistance value
- detecting element
- pair
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、温度による感熱素
子の抵抗変化を利用して赤外線量を検出する赤外線検出
素子の抵抗値を調整する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for adjusting a resistance value of an infrared detecting element for detecting an amount of infrared light by using a resistance change of a thermosensitive element depending on a temperature.
【０００２】[0002]
【従来の技術】この種の赤外線検出素子を用いた赤外線
検出器は、非接触式の温度センサであって、この温度セ
ンサとして作用する感温部が被測定物との間で赤外線の
授受を行い、この感温部の温度変化から被測定物の温度
を測定するように構成されている。これまで上記熱型の
赤外線検出器を小型化、高感度化する数々の提案がなさ
れている。中でも生体温度の測定に用いられる温度セン
サは、中心温度（例えば３７℃）における温度センサの
抵抗値が規定されている。しかしながら、この温度セン
サを量産した場合に、温度センサのサーミスタ膜におけ
る膜厚のバラツキや、一対の電極の寸法のバラツキか
ら、規定された所定の抵抗値に対して実際の抵抗値がバ
ラツキを生じる不具合があった。この点を解消するため
に、例えば、温度に応じて抵抗値が変化する厚膜又は薄
膜のサーミスタからなる検出用抵抗体とこの抵抗体の抵
抗値変化を検出するためのトリミング可能な厚膜又は薄
膜の抵抗体からなる出力検出用抵抗体とを同一の絶縁性
基板上に一体化したサーミスタ式温度センサが提案され
ている（特開平７−１１１２０６）。この温度センサの
出力検出用抵抗体をトリミングすることにより、検出用
抵抗体の抵抗値の所定の抵抗値に対する差を小さくする
ことができる。2. Description of the Related Art An infrared detector using an infrared detector of this type is a non-contact type temperature sensor, and a temperature sensing portion acting as this temperature sensor transmits and receives infrared rays to and from an object to be measured. The temperature of the device to be measured is measured from the temperature change of the temperature sensing part. A number of proposals have been made to reduce the size and sensitivity of the thermal infrared detector. Above all, for a temperature sensor used for measuring a living body temperature, the resistance value of the temperature sensor at a central temperature (for example, 37 ° C.) is defined. However, when this temperature sensor is mass-produced, the actual resistance value varies with respect to the prescribed predetermined resistance value due to the variation in the thickness of the thermistor film of the temperature sensor and the variation in the dimensions of the pair of electrodes. There was a defect. In order to eliminate this point, for example, a detection resistor composed of a thick-film or thin-film thermistor whose resistance value changes according to temperature, and a trimmable thick film or A thermistor-type temperature sensor has been proposed in which an output detection resistor composed of a thin-film resistor is integrated on the same insulating substrate (Japanese Patent Laid-Open No. 7-111206). By trimming the output detection resistor of the temperature sensor, the difference between the resistance value of the detection resistor and a predetermined resistance value can be reduced.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記サーミス
タ式温度センサでは検出用抵抗体の他に出力検出用抵抗
体を同一の絶縁性基板上に一体的に形成する等の複雑な
工程が必要となり、生産性に欠ける問題がある。本発明
の目的は、赤外線検出素子の抵抗値の所定の抵抗値に対
する差を容易に小さくして赤外線検出素子の生産性を高
める赤外線検出素子の抵抗値調整方法を提供することに
ある。However, the above-mentioned thermistor type temperature sensor requires a complicated process such as integrally forming an output detection resistor on the same insulating substrate in addition to the detection resistor. , There is a problem of lack of productivity. SUMMARY OF THE INVENTION An object of the present invention is to provide a method of adjusting the resistance of an infrared detecting element, which can easily reduce the difference between the resistance of the infrared detecting element and a predetermined resistance to increase the productivity of the infrared detecting element.
【０００４】[0004]
【課題を解決するための手段】請求項１に係る発明は、
図１（ａ）に示すように基板１１上に形成されたサーミ
スタ膜１２と、サーミスタ膜１２上に形成され所定の隙
間をあけて互いに噛み合うようにくし歯状に形成された
一対の電極１３ａ，１３ｂとを備えた赤外線検出素子の
抵抗値調整方法であって、一対の電極１３ａ，１３ｂ間
の抵抗値が所定の抵抗値以下になるように一対の電極１
３ａ，１３ｂを形成した後、一対の電極１３ａ，１３ｂ
のうちいずれか一方の電極のくし歯の一部分を切断する
ことにより一対の電極１３ａ，１３ｂ間の抵抗値を所定
の抵抗値に調整することを特徴とする。一対の電極１３
ａ，１３ｂのうちいずれか一方の電極のくし歯の一部分
を切断することにより、切断された部分の電極の面積が
減少し、その結果、赤外線検出素の抵抗値が増大して所
定の抵抗値に調整される。請求項２に係る発明は、請求
項１に係る発明であって、一方の電極のくし歯の一部分
の切断がレーザ又はリュータで行われる赤外線検出素子
の抵抗値調整方法である。レーザ又はリュータを用いれ
ば電極のくし歯の切断を正確にかつ短時間に実施でき
る。The invention according to claim 1 is
As shown in FIG. 1A, a thermistor film 12 formed on a substrate 11 and a pair of electrodes 13a formed on the thermistor film 12 and formed in a comb-shape so as to mesh with each other at a predetermined gap. 13b, wherein the resistance value between the pair of electrodes 13a and 13b is equal to or less than a predetermined resistance value.
After forming 3a, 13b, a pair of electrodes 13a, 13b
The resistance between the pair of electrodes 13a and 13b is adjusted to a predetermined resistance by cutting a part of the comb teeth of one of the electrodes. A pair of electrodes 13
a, 13b, by cutting a part of the comb teeth of one of the electrodes, the area of the electrode in the cut part is reduced, and as a result, the resistance value of the infrared detecting element increases to a predetermined resistance value. It is adjusted to. The invention according to claim 2 is the invention according to claim 1, which is a method for adjusting the resistance value of an infrared detecting element in which a part of the comb teeth of one electrode is cut by a laser or a luter. If a laser or a luter is used, the comb teeth of the electrode can be cut accurately and in a short time.
【０００５】[0005]
【発明の実施の形態】図１（ａ）及び図２（ａ）に示す
ように、本発明で用いられる基板１１はＳｉ、ＧａＡｓ
等の半導体又はＡｌ2Ｏ3等の絶縁体から構成される。基
板１１上にはサーミスタ膜１２が形成される。サーミス
タ膜１２は好ましくはＭｎ−Ｃｏ系、Ｍｎ−Ｃｒ系、Ｍ
ｎ−Ｃｕ系、Ｍｎ−Ｎｉ系等のサーミスタ材料をペース
ト化し、スピンコート法により基板１１上に成膜した
後、焼成することにより形成される。なお、基板１１の
中央部には赤外線検出素子の発熱を効率よく放散するた
めの開口部１７が形成される。サーミスタ膜１２上には
一対の電極１３ａ，１３ｂが所定の隙間をあけて互いに
噛み合うようにくし歯状に形成される。これらの電極１
３ａ，１３ｂはＡｌ，Ｃｒ，Ａｕ等からなる導電性膜を
スパッタリング、真空蒸着等の手段でサーミスタ膜１２
上に堆積させた後、フォトリソグラフィ技術を用いて所
望の形状にパターニングすることにより形成される。電
極１３ａには端子電極１４ａが、電極１３ｂには端子電
極１４ｂがそれぞれ電極形成と同時に形成される。この
ときに電極１３ａ，１３ｂ間の抵抗値は所定の抵抗値以
下になるように予め設定される。この所定の抵抗値以下
には、当然所定の抵抗値を含む。DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIGS. 1A and 2A, a substrate 11 used in the present invention is made of Si, GaAs.
And an insulator such as Al 2 O 3 . A thermistor film 12 is formed on a substrate 11. The thermistor film 12 is preferably a Mn-Co-based, Mn-Cr-based, M
A thermistor material such as an n-Cu-based or Mn-Ni-based material is pasted, formed into a film on the substrate 11 by spin coating, and then fired. An opening 17 for efficiently dissipating heat generated by the infrared detecting element is formed in the center of the substrate 11. On the thermistor film 12, a pair of electrodes 13a and 13b are formed in a comb-shape so as to mesh with each other with a predetermined gap. These electrodes 1
Reference numerals 3a and 13b denote a thermistor film 12 made of a conductive film made of Al, Cr, Au or the like by means of sputtering, vacuum deposition or the like.
After being deposited thereon, it is formed by patterning into a desired shape using a photolithography technique. A terminal electrode 14a is formed on the electrode 13a, and a terminal electrode 14b is formed on the electrode 13b at the same time when the electrodes are formed. At this time, the resistance between the electrodes 13a and 13b is set in advance so as to be equal to or less than a predetermined resistance. The predetermined resistance value or less naturally includes the predetermined resistance value.
【０００６】次いで、電極１３ａ，１３ｂ間の実際の抵
抗値と所定の抵抗値との差を求め、この差に応じて、く
し歯部分の電極の切断長を決める。即ち、図１（ａ）及
び図２（ａ）に示すように、上記一対の電極のうちいず
れか一方の電極、例えば電極１３ｂのくし歯の一部分を
上記差に応じて破線Ｘで示すように切断する。図１
（ｂ）及び図２（ｂ）に示すように切断された部分１６
の電極１３ｂの面積が減少し、その結果、赤外線検出素
子の抵抗値が増大し所定の抵抗値となる。電極のくし歯
部分の切断はレーザ装置から発せられるレーザにより、
又はリュータの先端に設けられたダイヤモンド砥石を回
転させながらくし歯部分に接触させることにより、正確
かつ短時間に行われる。実際の抵抗値が所定の抵抗値と
比較して大きな差がある場合には、切断部分１６を細か
くして複数回切断を繰り返してもよい。Next, a difference between the actual resistance value between the electrodes 13a and 13b and a predetermined resistance value is determined, and the cut length of the electrode at the comb tooth portion is determined according to the difference. That is, as shown in FIG. 1A and FIG. 2A, one of the electrodes of the pair of electrodes, for example, a part of the comb teeth of the electrode 13b is indicated by a broken line X according to the difference. Disconnect. FIG.
The part 16 cut as shown in FIG. 2B and FIG.
The area of the electrode 13b decreases, and as a result, the resistance value of the infrared detecting element increases to a predetermined resistance value. The cutting of the interdigital part of the electrode is performed by the laser emitted from the laser device.
Alternatively, the rotation can be performed accurately and in a short time by rotating the diamond grindstone provided at the tip of the luter so as to contact the comb teeth. If the actual resistance value is significantly different from the predetermined resistance value, the cutting portion 16 may be made finer and the cutting may be repeated a plurality of times.
【０００７】[0007]
【実施例】次に本発明の実施例を説明する。この実施例
では、基板としてはＳｉ基板を用い、この基板上にＭｎ
−Ｃｏ系材料からスピンコート法によりサーミスタ膜を
形成した。次いでサーミスタ膜上にＡｌをスパッタリン
グにより成膜した後、フォトリソグラフィ技術を用いて
くし歯状の一対の電極を形成した。このようにして得ら
れた赤外線検出素子の中心温度（３７℃）における規定
抵抗値は８ｋΩであった。上記赤外線検出素子を２５６
個製造したところ、これらの上記所定の抵抗値に対する
バラツキは±２０％であった。製造した２５６個の赤外
線検出素子について、それぞれ実際の抵抗値を測定し、
所定の抵抗値との差に応じて、くし歯部分の切断する長
さを決め、レーザにより切断した。このように抵抗値を
調整した後の２５６個の赤外線検出素子のバラツキは±
１％であった。レーザによるくし歯部分の切断は、正確
にかつ短時間で行うことができ、結果として抵抗値のバ
ラツキの小さい赤外線検出素子を短時間で量産すること
ができた。Next, embodiments of the present invention will be described. In this embodiment, a Si substrate is used as a substrate, and Mn is formed on the substrate.
A thermistor film was formed from a Co-based material by a spin coating method. Next, after a film of Al was formed on the thermistor film by sputtering, a pair of comb-shaped electrodes was formed using photolithography technology. The specified resistance value at the center temperature (37 ° C.) of the infrared detecting element thus obtained was 8 kΩ. The infrared detecting element is 256
When manufactured individually, the variation with respect to the above-mentioned predetermined resistance value was ± 20%. The actual resistance value of each of the manufactured 256 infrared detecting elements was measured,
The cutting length of the comb tooth portion was determined according to the difference from a predetermined resistance value, and cutting was performed using a laser. The variation of the 256 infrared detecting elements after the resistance value is adjusted is ±
1%. The cutting of the comb portion by the laser could be performed accurately and in a short time, and as a result, an infrared detecting element having a small variation in resistance value could be mass-produced in a short time.
【０００８】[0008]
【発明の効果】以上述べたように、本発明によれば、基
板上にサーミスタ膜を形成し、この上に所定の隙間をあ
けて互いに噛み合うようにくし歯状に一対の電極を形成
し、この一対の電極間の抵抗値が所定の抵抗値以下にな
るようにした後、所定の抵抗値との差に応じて一対の電
極のうちいずれか一方の電極のくし歯の一部分を切断し
て赤外線検出素子の抵抗値を調整するようにしたから、
従来の方法のような複雑な工程が不必要となり、所定の
抵抗値に対する実際の抵抗値の差を小さくできる。特に
赤外線検出素子を量産したときにバラツキの小さい赤外
線検出素子が効率良く得られる。As described above, according to the present invention, a thermistor film is formed on a substrate, and a pair of electrodes are formed on the substrate in a comb-tooth shape so as to mesh with each other with a predetermined gap. After the resistance value between the pair of electrodes is equal to or less than a predetermined resistance value, a part of the comb teeth of one of the pair of electrodes is cut in accordance with a difference from the predetermined resistance value. Because the resistance of the infrared detector was adjusted,
A complicated process like the conventional method is not required, and the difference between the actual resistance value and the predetermined resistance value can be reduced. In particular, when mass-producing an infrared detecting element, an infrared detecting element with small variation can be efficiently obtained.
【図１】（ａ） サーミスタ膜上に形成される電極のく
し歯の一部分を切断する前の状態を示す赤外線検出素子
の斜視図。 （ｂ） サーミスタ膜上に形成される電極のくし歯の一
部分を切断した後の状態を示す赤外線検出素子の斜視
図。FIG. 1A is a perspective view of an infrared detecting element showing a state before cutting a part of a comb tooth of an electrode formed on a thermistor film. (B) A perspective view of the infrared detecting element showing a state after a part of the comb teeth of the electrode formed on the thermistor film has been cut.
【図２】（ａ） 図１（ａ）のＡ−Ａ線断面図。 （ｂ） 図１（ｂ）のＢ−Ｂ線断面図。FIG. 2A is a cross-sectional view taken along the line AA of FIG. (B) FIG. 1 (b) is a sectional view taken along line BB.
１１ 基板 １２ サーミスタ膜 １３ａ，１３ｂ 一対の電極 DESCRIPTION OF SYMBOLS 11 Substrate 12 Thermistor film 13a, 13b A pair of electrodes
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小木 勝実 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社総合研究所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Katsumi Ogi 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Mitsubishi Materials Research Institute
Claims (2)
2)と、前記サーミスタ膜(12)上に形成され所定の隙間を
あけて互いに噛み合うようにくし歯状に形成された一対
の電極(13a,13b)とを備えた赤外線検出素子の抵抗値調
整方法であって、 前記一対の電極(13a,13b)間の抵抗値が所定の抵抗値以
下になるように前記一対の電極(13a,13b)を形成した
後、 前記一対の電極(13a,13b)のうちいずれか一方の電極の
くし歯の一部分を切断することにより前記一対の電極(1
3a,13b)間の抵抗値を前記所定の抵抗値に調整すること
を特徴とする赤外線検出素子の抵抗値調整方法。A thermistor film (1) formed on a substrate (11).
2) and a pair of electrodes (13a, 13b) formed on the thermistor film (12) and formed in a comb-shape so as to be engaged with each other with a predetermined gap therebetween. The method, after forming the pair of electrodes (13a, 13b) such that the resistance between the pair of electrodes (13a, 13b) is equal to or less than a predetermined resistance, the pair of electrodes (13a, 13b) ) By cutting a part of the comb teeth of one of the electrodes (1)
A method of adjusting the resistance value of the infrared detecting element, wherein the resistance value between 3a and 13b) is adjusted to the predetermined resistance value.
ーザ又はリュータで行われる請求項１記載の赤外線検出
素子の抵抗値調整方法。2. The method for adjusting the resistance value of an infrared detecting element according to claim 1, wherein a part of the comb teeth of one of the electrodes is cut by a laser or a router.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10128617A JPH11329808A (en) | 1998-05-12 | 1998-05-12 | Resistance adjusting method of infrared-ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10128617A JPH11329808A (en) | 1998-05-12 | 1998-05-12 | Resistance adjusting method of infrared-ray detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11329808A true JPH11329808A (en) | 1999-11-30 |
Family
ID=14989223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10128617A Pending JPH11329808A (en) | 1998-05-12 | 1998-05-12 | Resistance adjusting method of infrared-ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11329808A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010055841A1 (en) * | 2008-11-17 | 2010-05-20 | アルプス電気株式会社 | Thermistor and manufacturing method therefor |
| WO2019230428A1 (en) * | 2018-05-28 | 2019-12-05 | 株式会社村田製作所 | Electronic component and method of manufacturing same |
| JP2022551043A (en) * | 2020-09-02 | 2022-12-07 | テーデーカー エレクトロニクス アーゲー | Sensor element and method for manufacturing sensor element |
| DE102022126523B3 (en) | 2022-10-12 | 2023-09-21 | Tdk Electronics Ag | Sensor element and method for producing a sensor element |
-
1998
- 1998-05-12 JP JP10128617A patent/JPH11329808A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010055841A1 (en) * | 2008-11-17 | 2010-05-20 | アルプス電気株式会社 | Thermistor and manufacturing method therefor |
| JP5186007B2 (en) * | 2008-11-17 | 2013-04-17 | アルプス電気株式会社 | Thermistor and manufacturing method thereof |
| WO2019230428A1 (en) * | 2018-05-28 | 2019-12-05 | 株式会社村田製作所 | Electronic component and method of manufacturing same |
| JP2022551043A (en) * | 2020-09-02 | 2022-12-07 | テーデーカー エレクトロニクス アーゲー | Sensor element and method for manufacturing sensor element |
| DE102022126523B3 (en) | 2022-10-12 | 2023-09-21 | Tdk Electronics Ag | Sensor element and method for producing a sensor element |
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