JPH11317157A - Manufacture of electron emitting element, image forming device or the like - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the thickness uniform for a conductive thin film, to simplify the manufacturing process of the thin film, and to easily form an element on a substrate over a large area at a low cost by preliminarily forming a porous layer between opposed electrodes on a substrate, and applying a solution containing a conductive thin film forming material. SOLUTION: A porous layer consists of a porous silica layer 6 using an inorganic porous body obtained by using an organic/inorganic composite as raw material and heating and baking it to extinguish the organic part. The organic/inorganic composite consists of an organic/inorganic composite transparent homogeneous body obtained by uniformly dispersing a sugar derivative having a urethane bond, a urea bond and/or an amide bond in the matrix of an inorganic oxide, wherein the sugar derivative consists of isopropyl carbamate of sucrose, and the matrix of the inorganic oxide consists of the matrix of silica gel. The imparting of droplets is performed by an ink jet method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing an electron-emitting device, an electron source, a display panel and an image forming apparatus using a solution containing a material for forming a conductive thin film. More specifically, a method of manufacturing an electron-emitting device to which the solution is applied using an inkjet method, a method of manufacturing an electron source using the electron-emitting device, a method of manufacturing a display panel using the electron source, and the display panel The present invention relates to a method for manufacturing an image forming apparatus using the same.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a thermionic electron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as FE type), a metal / insulating layer / metal type (hereinafter abbreviated as MIM type), and a surface conduction electron emission element.

As an example of the FE type electron-emitting device, WPDy
ke and WWDolan, “Field emission”, Advance in Elec
tron Physics, 8, 89 (1956) or CASpindt, “Phys
icalProperties of thin-film field emission cathode
s with molybdenium cones ", J. Appi. Phys., 47, 5248 (197
Those described in 6) and the like are known.

As an example of the MIM type electron-emitting device, CAMead, “Operation of Tunnel-Emission Device” is used.
s ", J. Apply. Phys., 32, 646 (1961). As an example of a surface conduction electron-emitting device, MIElinson, Radio Eng. Electron Phys., 10, 1290. (1
965) is known.

[0005] The surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. Examples of the surface conduction electron-emitting device include a device using an SnO ₂ thin film by Elinson et al. And a device using an Au thin film.
[G. Dittmer, “Thin Solid Films”, 9,317 (1972)], In
₂ O ₃ / SnO ₂ thin film [M. Hartwell and C.
G. Fontad, "IEEE Trans. ED Conf.", 519 (1975)], and a method using a carbon thin film [Hisashi Araki et al., Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like are reported. .

FIG. 20 shows the above-described Hartwell device configuration as a typical device configuration of these surface conduction electron-emitting devices. In FIG. 1, reference numeral 1 denotes a substrate. Reference numeral 4 denotes a conductive thin film, which is formed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern. The electron emitting portion 5 is formed by an energization process called energization forming described later. The element electrode interval L1 in FIG.
m and W ′ are set at about 0.1 mm. The position and shape of the electron-emitting portion 5 are shown as a schematic diagram.

Conventionally, in these surface conduction electron-emitting devices, before the electron emission, the conductive thin film 4 is generally subjected to an energization process called energization forming to form an electron emission portion 5. Met. That is, the energization forming means a DC voltage or a very slowly increasing voltage, for example, 1 V, across the conductive thin film 4.
Applying a current of about V / min to locally destroy, deform or alter the conductive thin film 4 to form the electron emitting portion 5 in an electrically high resistance state. In the electron emitting section 5, a crack is generated in a part of the conductive thin film 4, and the electron is emitted from the vicinity of the crack. As described above, the conductive thin film 4 is locally broken, deformed, or deteriorated by the energization forming, and a portion where the structure is changed is referred to as an electron emission portion 5, and the conductive thin film 4 on which the electron emission portion 5 is formed by the energization forming. Is referred to as a conductive thin film 4 including an electron emission portion 5. The surface conduction electron-emitting device that has been subjected to the energization forming process emits electrons from the electron-emitting portion 5 by applying a voltage to the conductive thin film 4 including the above-described electron-emitting portion 5 and flowing a current through the device. It is a hurry.

As the surface conduction electron-emitting device, the above-mentioned M.I. In addition to the Hartwell device, the present applicant has formed a pair of opposing device electrodes formed of a conductor on an insulating substrate, and connected the two electrodes separately from these electrodes to form a conductive thin film. An element having a configuration in which an electron emission portion is formed by energization forming is reported. It is also reported that as a method of energization forming, the above-described method of applying a slowly increasing voltage of a pulse waveform and gradually increasing the peak value of the pulse can be applied. It is also reported that as a method of forming a conductive thin film, a method of applying a solution of an organometallic compound and forming a metal or metal oxide fine particle film by heat treatment can be employed. These configurations and methods are described in, for example, Japanese Patent Application Laid-Open No. 7-23525.
No. 5 discloses an example.

[0009]

However, since the above-mentioned conventional surface conduction type electron-emitting device is mainly manufactured by using a photolithography technique based on a semiconductor process, the electron-emitting device is formed on a large-area substrate. However, there is a problem that the manufacturing cost is high, for example, a large manufacturing apparatus is required.

As a means for solving this problem, when a method of applying a droplet of a solution containing a material for forming a conductive thin film to a substrate by an ink-jet method is used, various factors such as wetting of the substrate and the droplet are used. The thickness of the finally formed conductive thin film may not be sufficiently uniform depending on the properties, the size of the droplets, and the like. In the conductive thin film in such a state,
When the energization forming process is performed, the electron emission characteristics may vary due to the non-uniformity of the film thickness.

In a place where the thickness of the conductive thin film is too large, it is considered that a large electric current flows when a crack serving as an electron emission portion is formed. In some cases, too many electrons are not emitted even after the chemical treatment. On the other hand, in a place where the thickness of the conductive thin film is too small, it is probably because a sufficient current does not flow. However, a crack is not formed, and this part may be a path of a leak current.

[Object of the Invention] An object of the present invention is to make the thickness of a conductive thin film uniform, to simplify the manufacturing process of the thin film, and to easily form an element on a large-area substrate at low cost. An object of the present invention is to provide a method of manufacturing a surface conduction electron-emitting device having uniform electron emission characteristics of an electron-emitting device obtained thereby, and a method of manufacturing an electron source, a display panel, and an image forming apparatus using the electron-emitting device. is there.

[0013]

The above objects can be attained by the present invention. That is, in the method of manufacturing a surface conduction electron-emitting device of the present invention, a droplet of a solution containing a material for forming a conductive thin film is applied between opposing electrodes on a substrate to form a conductive thin film. A method of manufacturing an electron-emitting device for forming an electron-emitting portion in a thin film, wherein a porous layer is formed in advance between opposing electrodes on a substrate, and the application of the droplet is performed by an inkjet method. I do. Further, according to the present invention, the porous layer is a porous silica layer.

Further, according to the present invention, the organic-inorganic composite used as the raw material of the porous silica has a large volume occupying the organic molecules, and when the organic portion is eliminated by heating and sintering, a large pore size such as a sphere is obtained. And an inorganic porous body having a large porosity in which pores (average pore diameter is distributed in several nm) are formed.

According to this method, when the droplet is applied,
By being sucked into the porous silica layer having a large porosity, it is possible to prevent the film thickness from becoming excessively thick in the vicinity of the center of the droplet, and to make the applied droplet uniform in film thickness without unevenness. .

The present invention also relates to a method for manufacturing an electron source, a display panel, and an image forming apparatus.

That is, a method of manufacturing an electron source according to the present invention is a method of manufacturing an electron source comprising an electron-emitting device and a means for applying a voltage to the device. It is characterized by being manufactured by a method for manufacturing an electron-emitting device.

A method of manufacturing a display panel according to the present invention includes an electron source having an electron-emitting device and a means for applying a voltage to the device, and a fluorescent film which emits light by receiving electrons emitted from the device. A method for manufacturing a display panel, wherein the element is manufactured by the method for manufacturing a surface conduction electron-emitting device according to the present invention.

Further, according to the method of manufacturing an image forming apparatus of the present invention, there is provided an electron source having an electron-emitting device and a means for applying a voltage to the device, a phosphor film for receiving and emitting light from the device, A driving circuit for controlling a voltage applied to the element by using an external signal, wherein the element is manufactured by the method for manufacturing a surface conduction electron-emitting device of the present invention. Features.

[0020]

Embodiments of the present invention will be described with reference to the drawings.

[First Embodiment] FIGS. 1A and 1B
3A and 3B are a plan view and a cross-sectional view of the surface conduction electron-emitting device manufactured by the method of the first embodiment. FIG.
In (a) and (b), 1 is an insulating substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, 5 is an electron emitting portion, and 6 is a porous silica layer.

Examples of the substrate 1 include quartz glass, glass with a reduced content of impurities such as Na, blue plate glass, a glass substrate obtained by laminating SiO ₂ formed on a blue plate glass by sputtering or the like, ceramics such as alumina, and a Si substrate. Can be used.

Device electrodes 2 and 3 opposed to each other on substrate 1
As a material for the material, a general conductor material is used, for example, Ni, Cr, Au, Mo, W, Pt, Ti, Al, C
metals such as u, Pd or alloys thereof, Pd, Au, A
g, As, RuO ₂ , Pd—Ag or other metal or metal oxide and a printed conductor made of glass or the like; In ₂ O ₃ −
It is appropriately selected from a transparent conductor such as SnO _{2 and} a semiconductor material such as polysilicon.

The element electrode spacing L, the element electrode length W1, the shapes of the element electrodes 2 and 3, and the like are appropriately designed according to the applied form and the like. The distance L between the device electrodes 2 and 3 can be in the range of several tens of nm to several hundreds of μm, and is preferably in the range of several μm to several tens of μm in consideration of the voltage applied between the device electrodes 2 and 3. Range. The element electrode length W can be in the range of several μm to several hundred μm in consideration of the resistance value of the electrode and the electron emission characteristics. The film thickness d of the device electrodes 2 and 3 can be in the range of several tens nm to several μm.

As a raw material for forming the porous silica layer 6, a matrix of an inorganic oxide, for example, silica gel, contains a urethane bond (—NH.CO.O—) and a urea (urea) bond (—NH.CO.NH). -) And / or a saccharide derivative having an amide bond (-NH.CO-), for example, isopropylcarbamate of sucrose (saccharose) is uniformly dispersed, and an organic-inorganic composite transparent homogeneous material is used.

The organic / inorganic composite transparent homogeneous material according to the present invention contains a saccharide derivative as an organic molecule, and the saccharide molecule has a cyclic structure. The volume occupied by organic molecules is larger than that in which only organic polymers such as polyamide, polyurethane and polyurea having no cyclic structure are blended. Therefore, when the sugar molecules, which are organic portions, are eliminated from the composite by heating and baking, etc., an inorganic porous body having a large porosity in which pores having a large pore diameter such as a sphere are formed. The pore diameter is widely distributed over a diameter of several nm. Further, by appropriately selecting the type of the saccharide, it is possible to arbitrarily design and control the size of the pores of the inorganic porous material to some extent.

The saccharide derivative forming the organic portion of the organic-inorganic composite transparent homogeneous material according to the embodiment of the present invention has a urethane bond, a urea bond and / or an amide bond known as a hydrogen bond acceptor. Therefore, in the process of forming this complex, an inorganic oxide, for example, a silanol residue (-SiOH) of silica gel and a carbonyl group (-C = O) of a urethane bond, a urea bond and / or an amide bond are formed. Due to strong interaction due to hydrogen bonding, aggregation between sugar molecules does not occur, and both organic and inorganic liquids do not cause phase separation. Therefore, the complex becomes homogeneous and transparent, and when sugar molecules are eliminated from the complex by heating and baking, voids having a molecular level are generated.

In this case, as the saccharide, a wide variety of monosaccharides, disaccharides and polysaccharides having a hydroxy group (—OH) and / or an amino group (—NH ₂ ) are used.
As the monosaccharide, those having various carbon numbers of aldose and ketose, such as triose, tetrose, pentose, and hexose, can be used. In addition, polycarbon sugar, deoxy sugar, acidic sugar, amino sugar, and the like can be used.

Further, disaccharides such as sucrose, maltose, cellobiose and gentiobiose, and polysaccharides such as
Chitin, chitosan, alginic acid and the like can be used, and in addition, various sugars belonging to oligosaccharides (disaccharides to hexasaccharides), heterooligosaccharides and heteropolysaccharides can be used. The hydroxy and / or amino groups of these various saccharides are changed into urethane bonds, urea bonds and / or amide bonds having a carbonyl group, and the saccharide derivatives form the organic portion of the organic-inorganic complex. For example, as shown in Chemical Formula 1, sucrose and isopropyl isocyanate are reacted to synthesize a sucrose derivative having a urethane bond, and this is used as an organic substance.

[0030]

Embedded image Next, regarding the inorganic oxide forming the matrix,
Various things can be used depending on the purpose and use,
Most commonly, silica and alumina are used. The inorganic oxide is used to obtain a three-dimensional fine network using a sol-gel method or the like. Then, the saccharide derivative is uniformly dispersed in the matrix.

The ratio of the inorganic oxide to the saccharide derivative, that is, the mixing ratio of the hydrolyzable polymerizable silane compound and the saccharide derivative, is usually about 0.1 to 100 silane compound to 1 saccharide derivative by weight. Preferably, it is about 1 to 10.

The method for producing the organic / inorganic composite transparent homogeneous material according to the present invention is not particularly limited.
Using a gel method, a hydrolytic polymerizable compound such as an alkoxysilane such as tetraethoxysilane or tetramethoxysilane is hydrolyzed and polymerized under the addition of a saccharide derivative to form a gel. A method of obtaining a complex in which a saccharide derivative is uniformly dispersed in an oxide matrix is employed. The hydrolysis polymerization reaction in this method may be performed under exactly the same operation and conditions as in the conventional sol-gel method.

In the above method, the saccharide derivative having a urethane bond, a urea bond and / or an amide bond is
Excellent affinity with tetraalkoxysilane and good compatibility, so no phase separation occurs before and after gelation by hydrolysis polymerization reaction of tetraalkoxysilane, and a three-dimensional network formed by gelation The saccharide derivative is uniformly dispersed in the structured silica gel, and a homogeneous and transparent organic-inorganic composite is obtained.The saccharide derivative, which is the organic portion, is removed by heating and baking to change its shape and form. While being held, it can be converted into an inorganic porous material, for example, porous silica. At this time, the porous silica has a large porosity having a surface area of about several 100 m ² / g.

As the conductive thin film 4, it is preferable to use a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage for the device electrodes 2 and 3, the resistance value between the device electrodes 2 and 3, a forming condition described later, and the like.
It is preferably in the range of several times 0.1 nm to several hundred nm, more preferably in the range of 1 nm to 50 nm. As for the resistance value, Rs is 10 ² to 10 ⁷ Ω / □.
Is the value of Rs has a thickness t, a width w, and a length r
Is the value that appears when the resistance R of the thin film is set as R = Rs (r / w). When the resistivity of the thin film material is ρ, Rs = ρ /
It is represented by t.

In the present embodiment, the forming process will be described by taking an energizing process as an example. However, the forming process is not limited to this, and a method of forming a high resistance state by causing a crack in a film is used. Any method may be used.

The material forming the conductive thin film 4 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
It is appropriately selected from oxides such as O, SnO ₂ , In ₂ O ₃ , PbO, and Sb ₂ O ₃ .

The fine particle film described here is a film in which a plurality of fine particles are gathered. The fine structure is not only a state in which the fine particles are individually dispersed and arranged, but also a state in which the fine particles are adjacent to each other or overlap each other ( (Including the case where some fine particles are aggregated to form an island structure as a whole)
Film. The particle size of such fine particles is in the range of several times to several hundred nm of 0.1 nm, preferably in the range of 1 nm to 20 nm.

The electron-emitting portion 5 is constituted by a high-resistance crack formed in a part of the conductive thin film 4 and depends on the thickness, film quality, material, and method of energization forming and the like of the conductive thin film 4 described later. It will be. Inside the electron emission unit 5,
In some cases, conductive fine particles having a particle size ranging from several times 0.1 nm to several tens nm are present. The conductive fine particles contain some or all of the elements of the material constituting the conductive thin film 4. The electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof can also contain carbon and a carbon compound.

Hereinafter, an example of the manufacturing method will be described with reference to FIGS. 1, 2, 3, and 4. 2, 3, and 4, the same parts as those shown in FIG. 1 are denoted by the same reference numerals as those shown in FIG. 1.

(1) After sufficiently washing the substrate 1 with a detergent, pure water, an organic solvent or the like, a composite of sucrose / silica with a urethane bond is used as a raw material for forming a porous silica layer on the substrate. Then, a solution obtained by dissolving this in an alcoholic solvent is applied. It is preferable that the application method is performed by an ink jet method on a desired electron emission element production site. Next, this is heated and calcined to eliminate the organic portion, thereby forming a porous silica layer having a large porosity with a surface area of about several hundred m ² / g (FIG. 2A).

This porous silica layer may be applied between the electrodes after the formation of the device electrodes in the next stage and then heated and fired (FIG. 3).
(A) to (c)). In this case, the silica layer adheres to a part of the electrode, but there is no problem because the porous layer can be electrically connected to the conductive film.

(2) Next, after an element electrode material is deposited on the substrate 1 by a vacuum deposition method, a sputtering method, or the like, the element electrodes 2 and 3 are formed on the substrate 1 by, for example, a photolithography technique (FIG. b)).

(3) Next, a droplet of a solution containing the material for forming a conductive thin film is applied between the electrodes by the droplet applying means 7 (FIG. 2C). At this time, it is preferable that the center of the dot (droplet) is located at the center between the electrodes 2 and 3. The length W2 of the portion where the dot overlaps the electrodes 2 and 3 is preferably equal to or less than the length W1 of the element electrode.

As the liquid drop applying means 7, any apparatus can be used as long as it can form an arbitrary liquid drop. In particular, the liquid drop applying means 7 can be controlled in a range of about several tens of ng to several tens of ng. An ink jet type apparatus which can easily form a small amount of droplets of about ng or more is preferable. What is inkjet?
After forming a liquid droplet, eject it toward the surface to be applied,
This is a droplet applying means which transfers the liquid droplet to the surface to be applied mainly by inertia of the liquid droplet. Usually, the ink jet means for changing the relative position between the droplet ejection unit and the applied surface, or the liquid droplet being transferred due to the inertia, for the purpose of transferring the liquid droplet to a desired position on the applied surface. In many cases, a means for adjusting the flight direction of the liquid droplet by applying an external force due to non-contact such as static electricity to the droplet is used in many cases.

The ink jet system includes a piezo system, a heating foaming (bubble jet) system, and the like. The piezo method is an ink jet method in which a liquid droplet is formed and ejected by utilizing a deformation force when a voltage is applied to a piezoelectric body. The bubble jet method is also a method of ink jet, in which a small droplet of liquid is formed and ejected by utilizing a bumping force generated when a liquid is heated in a small space. The state of the droplets may be any state as long as the droplets can be formed, and examples thereof include a solution in which the above-mentioned metal or the like is dispersed and dissolved in water, a solvent, or the like, a solution, an organic metal solution, or the like. Can be

After applying droplets of a solution containing the material constituting the conductive thin film by the above-described method, a heating and baking treatment is performed to form a conductive thin film 4 (FIG. 2D). Usually, the conductive thin film formed as described above has a microscopic form in which a large number of fine particles made of a material constituting the conductive thin film are aggregated. By this method, the reproducibility of a desired dot diameter and resistance is improved, and as a result, a surface conduction electron-emitting device having desired electron emission characteristics can be manufactured with good reproducibility. Also,
In some cases, the width and the like of the electron-emitting portion formed by the forming process described later vary greatly depending on the thickness of the conductive thin film. Even in such a case, according to the present invention, the problem due to the difference in the film thickness is improved.

(4) Subsequently, a forming step is performed. As an example of a method of the forming step, a method by an energization process will be described. When power is applied between the device electrodes 2 and 3 using a power supply (not shown), a portion of the conductive thin film 4
An electron emitting portion 5 having a changed structure is formed (FIG. 2).
(E)). According to the energization forming, a portion where the structure such as destruction, deformation or alteration is locally formed in the conductive thin film 4 is formed.

The portion constitutes the electron emission section 5. FIG. 5 shows an example of the voltage waveform of the energization forming.

The voltage waveform is preferably a pulse waveform. The method shown in FIG. 5A, in which a pulse with a constant pulse peak value is applied continuously, and the method shown in FIG. 5B, in which a voltage pulse is applied while increasing the pulse peak value, are used. There are techniques.

T1 and T2 in FIG. 5A are the pulse width and pulse interval of the voltage waveform. Normally T1 is 1 μsec ~
10 ms and T2 are set in the range of 10 μs to 100 ms. The peak value of the triangular wave (peak voltage at the time of energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG.
It can be similar to that shown in FIG. The peak value of the triangular wave (peak voltage during energization forming) can be increased, for example, by about 0.1 V steps.

The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive thin film 4 during the pulse interval T2, and measuring the current. For example, an element current flowing by applying a voltage of about 0.1 V is measured, and a resistance value is obtained. When the resistance value indicates 1 MΩ or more, the energization forming is terminated.

(5) It is preferable to perform a process called an activation step on the device after the forming. The activation step means that the element current If, the emission current Ie
Is a step that changes significantly. The activation step can be performed, for example, by repeatedly applying a pulse in an atmosphere containing a gas of an organic substance, similarly to the energization forming. This atmosphere can be formed by using an organic gas remaining in the atmosphere when the inside of the vacuum vessel is evacuated using, for example, an oil diffusion pump or a rotary pump, or is sufficiently evacuated once by an ion pump or the like. It can also be obtained by introducing a gas of an appropriate organic substance into a vacuum. The preferable gas pressure of the organic substance at this time is:
Since it differs depending on the above-described application form, the shape of the vacuum container, the type of the organic substance, and the like, it is appropriately set according to the case.

Suitable organic substances include alkane, alkene, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids, and organic acids such as sulfonic acids. Specific examples thereof include saturated hydrocarbons represented by C _n H _{2n + 2} such as methane, ethane, and propane, and unsaturated hydrocarbons represented by a composition formula such as C _n H _2n such as ethylene and propylene. Hydrocarbons, benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, formic acid, acetic acid, propionic acid and the like can be used.

By this treatment, carbon or a carbon compound is deposited on the device from organic substances existing in the atmosphere,
The element current If and the emission current Ie change remarkably.

The end of the activation step is determined as appropriate while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse crest value, and the like are set as appropriate.

Carbon and carbon compounds include, for example, graphite (including so-called HOPG ', PG (GC),
HOPG has a crystal structure of almost perfect graphite, PG has a crystal grain of about 20 nm and has a slightly disordered crystal structure,
C indicates that the crystal grain becomes about 2 nm and the disorder of the crystal structure is further increased. ), Amorphous carbon (refers to amorphous carbon and a mixture of amorphous carbon and the above-mentioned graphite microcrystals), and the film thickness thereof is preferably within a range of 50 nm or less, and is preferably 30 nm or less.
It is more preferable to set the following range.

(6) The electron-emitting device obtained through such a step is preferably subjected to a stabilization step. This stabilization step is a step of exhausting the organic substance in the vacuum vessel. It is preferable to use a vacuum exhaust device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump or an ion pump can be used.

In the activation step, when an oil diffusion pump or a rotary pump is used as an exhaust device, and an organic gas derived from an oil component generated from the oil diffusion pump is used, it is necessary to keep the partial pressure of this component as low as possible. . The partial pressure of the organic component in the vacuum container is preferably 1.3 × 10 ⁻⁶ Pa or less, more preferably 1.3 × 10 ⁻⁸ Pa or less, at a partial pressure at which the carbon and the carbon compound hardly newly deposit. Particularly preferred.

When the inside of the vacuum vessel is further evacuated, it is preferable to heat the entire vacuum vessel so that the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device can be easily evacuated. The heating conditions at this time are desirably 5 hours or more at 80 to 200 ° C., but are not particularly limited to these conditions, depending on conditions appropriately selected according to various conditions such as the size and shape of the vacuum vessel and the configuration of the electron-emitting device. Do. The pressure in the vacuum vessel needs to be as low as possible, and is 1.3 to 3.9 × 10
^-5 Pa or less, more preferably 1.3 × 10 ^-6 Pa or less.

It is preferable that the atmosphere at the time of driving after the stabilization process is performed is the same as that at the end of the stabilization treatment, but the present invention is not limited to this. Even if the degree of vacuum itself is slightly reduced, sufficiently stable characteristics can be maintained.

By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed.
As a result, the element current If and the emission current Ie are stabilized.

The basic characteristics of the electron-emitting device to which the present invention can be applied obtained through the above-described steps will be described with reference to FIGS.

FIG. 6 is a schematic diagram showing an example of a vacuum processing apparatus. This vacuum processing apparatus also has a function as a measurement evaluation apparatus. In FIG. 6 as well, the same parts as those shown in FIG. 1 are denoted by the same reference numerals as in FIG. In FIG. 6, reference numeral 105 denotes a vacuum vessel;
Reference numeral 6 denotes an exhaust pump. An electron-emitting device is provided in the vacuum vessel 105. That is, 1 is a substrate constituting an electron-emitting device, 2 and 3 are device electrodes, 4 is a conductive thin film,
Reference numeral 5 denotes an electron emitting portion. Reference numeral 101 denotes a power supply for applying a device voltage Vf to the electron-emitting device, and 100 denotes device electrodes 2 and 3.
An ammeter 104 for measuring a device current If flowing through the conductive thin film 4 therebetween, and an anode electrode 104 for capturing an emission current Ie emitted from an electron emission portion of the device. 10
Reference numeral 3 denotes a high-voltage power supply for applying a voltage to the anode electrode 104, and reference numeral 102 denotes an ammeter for measuring an emission current Ie emitted from the electron emission section 5 of the device. As an example, the measurement can be performed with the voltage of the anode electrode in the range of 1 kV to 10 kV and the distance H between the anode electrode and the electron-emitting device in the range of 2 mm to 8 mm.

The vacuum vessel 105 is provided with equipment necessary for measurement in a vacuum atmosphere, such as a vacuum gauge (not shown), so that measurement and evaluation can be performed in a desired vacuum atmosphere. The exhaust pump 106 includes a normal high vacuum device system including a turbo pump and a rotary pump, and further includes an ultra-high vacuum device system including an ion pump and the like. The entire vacuum processing apparatus provided with the electron source substrate shown here can be heated to 200 ° C. by a heater (not shown). Therefore, by using this vacuum processing apparatus, the steps after the energization forming described above can also be performed.

FIG. 7 shows the emission current Ie, the device current If, and the device voltage V measured using the vacuum processing apparatus shown in FIG.
It is the figure which showed the relationship of f typically. In FIG.
Since the emission current Ie is significantly smaller than the element current If, it is shown in arbitrary units. The vertical and horizontal axes are linear scales.

As is clear from FIG. 7, the surface conduction electron-emitting device to which the present invention can be applied has three characteristic properties with respect to the emission current Ie.

That is, (i) When the device is applied with a certain voltage (called a threshold voltage, which is equal to or higher than Vth in FIG. 7), the emission current Ie sharply increases, while the threshold voltage Vt
Below h, the emission current Ie is hardly detected. That is, it is a nonlinear element having a clear threshold voltage Vth with respect to the emission current Ie.

(Ii) Since the emission current Ie depends monotonically on the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.

(Iii) The emission charge captured by the anode electrode 104 depends on the time during which the device voltage Vf is applied.
That is, the amount of charge captured by the anode electrode 104 can be controlled by the time during which the device voltage Vf is applied.

As can be understood from the above description, the surface conduction electron-emitting device to which the present invention can be applied can easily control the electron emission characteristics according to the input signal. By utilizing this property, it is possible to apply to various fields such as an electron source and an image forming apparatus having a plurality of electron-emitting devices.

FIG. 7 shows an example in which the element current If monotonically increases with respect to the element voltage Vf (hereinafter referred to as "MI characteristic"). On the other hand, the element current If changes with respect to the element voltage Vf with respect to the voltage-controlled negative resistance characteristic (hereinafter, “VC
This is called "NR characteristic". ) (Not shown). These characteristics can be controlled by controlling the aforementioned steps.

[Second Embodiment] An application example of an electron-emitting device to which the present invention can be applied will be described below. By arranging a plurality of surface conduction electron-emitting devices to which the present invention is applicable on a substrate, for example, an electron source or an image forming apparatus can be configured.

Various arrangements of the electron-emitting devices can be adopted. As an example, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and a direction perpendicular to the wiring (referred to as a column direction). There is a ladder-like arrangement in which electrons from the electron-emitting devices are controlled and driven by control electrodes (also referred to as grids) disposed above the electron-emitting devices. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction.

This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

The surface conduction electron-emitting device to which the present invention can be applied has the characteristics (i) to (iii) as described above. That is, when the electron emission from the surface conduction electron-emitting device is equal to or higher than the threshold voltage, it can be controlled by the peak value and the width of the pulse voltage applied between the opposing device electrodes. On the other hand, when the voltage is equal to or lower than the threshold voltage, it is hardly emitted. According to this characteristic, even when a large number of electron-emitting devices are arranged,
If a pulse-like voltage is appropriately applied to each element, a surface conduction electron-emitting device can be selected and the amount of electron emission can be controlled according to an input signal.

Hereinafter, an electron source substrate obtained by disposing a plurality of electron-emitting devices to which the present invention can be applied based on this principle will be described with reference to FIG. 8, reference numeral 121 denotes an electron source substrate, 122 denotes an X-direction wiring, and 123 denotes a Y-direction wiring. 124 is a surface conduction electron-emitting device, and 125 is a connection. The surface conduction electron-emitting device 124 may be of the above-mentioned flat type or vertical type.

The m X-direction wirings 122 are Dx1, Dx
2 ... Dxm, and can be made of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness, and width of the wiring are appropriately designed. The Y-direction wiring 83 includes n wirings Dy1, Dy2,... Dyn, and is formed in the same manner as the X-direction wiring 122. An interlayer insulating layer (not shown) is provided between the m X-directional wirings 122 and the n Y-directional wirings 123 to electrically separate them (m and n are both positive. Integer).

The interlayer insulating layer (not shown) is made of SiO ₂ or the like formed by using a vacuum deposition method, a printing method, a sputtering method, or the like. For example, the substrate 12 on which the X-direction wiring 122 is formed
1 is formed in a desired shape on the entire surface or a part thereof. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-directional wiring 122 and the Y-directional wiring 123.
The X-direction wiring 122 and the Y-direction wiring 123 are led out as external terminals.

A pair of electrodes (not shown) constituting the surface conduction electron-emitting device 124 are electrically connected to the m X-directional wires 122 and the n Y-directional wires 123 by a connection 125 made of a conductive metal or the like. Have been.

The material forming the wirings 122 and 123,
The material forming the connection 125 and the material forming the pair of device electrodes may have some or all of the same or different constituent elements.

These materials are appropriately selected, for example, from the above-mentioned materials for the device electrodes. When the material forming the element electrode is the same as the wiring material, the wiring connected to the element electrode can also be called an element electrode.

The X-direction wiring 122 is connected to a scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices 124 arranged in the X direction. On the other hand, a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices 124 arranged in the Y direction according to an input signal is connected to the Y-direction wiring 123.
The driving voltage applied to each electron-emitting device is supplied as a difference voltage between a scanning signal and a modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently using simple matrix wiring.

FIGS. 9 and 10 show an image forming apparatus constructed using such an electron source having a simple matrix arrangement.
This will be described with reference to FIG. FIG. 9 is a schematic view showing an example of a display panel of the image forming apparatus, and FIG. 10 is a schematic view of a fluorescent film used in the image forming apparatus of FIG. FIG.
FIG. 2 is a block diagram showing an example of a drive circuit for performing display according to an NTSC television signal.

In FIG. 9, reference numeral 121 denotes an electron source substrate on which a plurality of electron-emitting devices are arranged; 131, a rear plate on which the electron source substrate 121 is fixed; 136, a fluorescent film 134 and a metal back 135 formed on the inner surface of a glass substrate 133; This is the finished face plate. Reference numeral 132 denotes a support frame. The support frame 132 includes a rear plate 131, a face plate 1
36 are connected using frit glass or the like. 13
Reference numeral 8 denotes an envelope, for example, in the atmosphere or in nitrogen.
By baking for 10 minutes or more in a temperature range of 400 to 500 ° C., a seal is formed.

Reference numeral 124 denotes the electron-emitting portion 5 in FIG.
Is equivalent to Reference numerals 122 and 123 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 138 includes the face plate 136, the support frame 132, and the rear plate 131, as described above. Since the rear plate 131 is provided mainly for the purpose of reinforcing the strength of the substrate 121, if the substrate 121 itself has sufficient strength, the separate rear plate 131 can be unnecessary. That is, the support frame 1 is directly attached to the substrate 121.
32, the face plate 136, the support frame 132
In addition, the envelope 138 may be constituted by the substrate 121. On the other hand, by installing a support (not shown) called a spacer between the face plate 136 and the rear plate 131, the envelope 13 having a sufficient strength against the atmospheric pressure is provided.
8 can also be configured.

FIG. 10 is a schematic diagram showing a fluorescent film. The fluorescent film 134 can be composed of only a phosphor in the case of monochrome. In the case of a color fluorescent film, a black conductive material 141 called a black stripe or a black matrix or the like is used depending on the arrangement of the fluorescent materials.
2 can be configured. Black stripe,
The purpose of providing the black matrix is to make the mixed portions between the respective phosphors 142 of the necessary three primary color phosphors black in the case of color display so that mixed colors and the like are inconspicuous, and to reflect external light on the phosphor film 134. The purpose is to suppress a decrease in contrast. As a material for the black stripe, a material which is conductive and has little light transmission and reflection can be used in addition to a commonly used material mainly containing graphite.

The method of applying the phosphor onto the glass substrate may be a precipitation method, a printing method, or the like irrespective of monochrome or color. Usually, a metal back 135 is provided on the inner surface side of the fluorescent film 134.

The purpose of providing the metal back 135 is to convert the light emitted from the phosphor toward the inner surface into the face plate 136.
Improving the brightness by specular reflection to the side,
The purpose is to function as an electrode for applying an electron beam acceleration voltage, and to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like.

The face plate 136 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 134 in order to further increase the conductivity of the fluorescent film 134.

When performing the above-mentioned sealing, in the case of color, it is necessary to make each color phosphor correspond to the electron-emitting device.
Sufficient alignment is essential.

The image forming apparatus shown in FIG. 11 is manufactured, for example, as follows.

The envelope 138 is evacuated through an exhaust pipe (not shown) by an exhaust device that does not use oil, such as an ion pump and a sorption pump, while appropriately heating the envelope 138 in the same manner as in the above-described stabilization step. After the atmosphere having a vacuum degree of about ^10-5 Pa and a sufficiently small amount of organic substances is set, sealing is performed.

In order to maintain the degree of vacuum after sealing the envelope 138, a getter process may be performed.

This is achieved by heating using a resistance heating or a high frequency heating or the like immediately before or after the sealing of the envelope 138, at a predetermined position (not shown) in the envelope 138.
This is a process of heating the getter arranged in the above to form a deposited film. The getter usually contains Ba or the like as a main component, and maintains a pressure of, for example, 1.3 × 10 ⁻³ or 1.3 × 10 ⁻⁵ Pa by the adsorption action of the deposited film.

Here, steps after the forming process of the surface conduction electron-emitting device can be set as appropriate.

Next, an example of the configuration of a drive circuit for performing television display based on an NTSC television signal on a display panel configured using electron sources having a simple matrix arrangement will be described with reference to FIG. . In FIG. 11, 151 is an image display panel, 152 is a scanning circuit,
153 is a control circuit, and 154 is a shift register. 1
55 is a line memory, 156 is a synchronization signal separation circuit, 15
7 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 151 has terminals Dox1 to Dox.
xm, terminals Doy1 to Doyn, and a high voltage terminal Hv are connected to an external electric circuit. Terminals Dox1 to D
oxm is a scanning signal for sequentially driving an electron source provided in the display panel, that is, a group of surface-conduction electron-emitting devices arranged in a matrix of m rows and n columns, one row at a time (n elements). Is applied.

To the terminals Dy1 to Dyn, a modulation signal for controlling the output electron beam of each of the surface conduction electron-emitting devices in one row selected by the scanning signal is applied. The high-voltage terminal Hv is connected to the DC voltage source Va, for example, by one.
A DC voltage of 0 kV is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam emitted from the surface conduction electron-emitting device to excite the phosphor.

The scanning circuit 152 will be described. This circuit includes m switching elements inside (in the drawing, S1 to Sm are schematically shown). Each switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level),
The display panel 151 is electrically connected to the terminals Dx1 to Dxm. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 153, and can be configured by combining switching elements such as FETs, for example.

In the case of the present embodiment, the DC voltage source Vx supplies a drive voltage applied to an unscanned element based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element.
It is set so as to output a constant voltage lower than the electron emission threshold voltage.

The control circuit 153 has a function of matching the operation of each section so that appropriate display is performed based on an image signal input from the outside. The control circuit 153 generates control signals Tscan, Tsft, and Tmry for each unit based on the synchronization signal Tainc sent from the synchronization signal separation circuit 156.

The synchronizing signal separating circuit 156 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 156 includes a vertical synchronizing signal and a horizontal synchronizing signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is input to the shift register 154.

The shift register 154 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 153. (Ie, the control signal Tsft can be said to be a shift clock of the shift register 154).
The data for one line of the serial / parallel-converted image (corresponding to drive data for N electron-emitting devices) is Id
The shift register 154 outputs N parallel signals of 1 to Idn.

The line memory 155 is a storage device for storing data for one line of an image for a required time only, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 153. The stored contents are output as I'd1 to I'dn and input to the modulation signal generator 157.

The modulation signal generator 157 outputs the image data I '
The signal source is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of d1 to I'dn, and its output signal is transmitted through the terminals Doy1 to Doyn. Applied to the emitting element.

As described above, the electron-emitting device to which the present invention can be applied has the following basic characteristics with respect to the emission current Ie. That is, a clear threshold voltage Vth is required for electron emission.
And electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. From this, when applying a pulsed voltage to this element,
For example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied, an electron beam is output. At this time, the pulse peak value V
By changing m, the intensity of the output electron beam can be controlled. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam. Therefore, a voltage modulation method, a pulse width modulation method, or the like can be adopted as a method of modulating the electron-emitting device according to the input signal. When implementing the voltage modulation method, a circuit of the voltage modulation method that generates a voltage pulse of a fixed length and modulates the peak value of the pulse appropriately according to input data is used as the modulation signal generator 157. be able to.

When implementing the pulse width modulation method,
As the modulation signal generator 157, a pulse width modulation type circuit that generates a voltage pulse having a constant peak value and appropriately modulates the width of the voltage pulse according to input data can be used.

The shift register 154 and the line memory 15
5 can be a digital signal type or an analog signal type. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronizing signal separation circuit 156 into a digital signal. For this purpose, an A / D converter may be provided at the output section 116. In connection with this, the line memory 15
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit used for modulation signal generator 157 is slightly different. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A modulation circuit is used as the modulation signal generator 157, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 157 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for amplifying the voltage of the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, the modulation signal generator 157 may employ an amplifier circuit using, for example, an operational amplifier, and may add a level shift circuit and the like as necessary. In the case of the pulse width modulation method, for example, a voltage-controlled oscillation circuit (VCO) can be employed, and an amplifier for amplifying the voltage up to the drive voltage of the surface conduction electron-emitting device can be added as necessary.

In the image display device to which the present invention can be applied, which has such a configuration, electron emission is achieved by applying a voltage to each electron-emitting device via external terminals Dox1 to Doxm and Doy1 to Doyn. Occurs. A high voltage is applied to the metal back 135 or a transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam.
The accelerated electrons collide with the fluorescent film 134 and emit light to form an image.

The configuration of the image forming apparatus described here is an example of an image forming apparatus to which the present invention can be applied, and various modifications can be made based on the technical idea of the present invention. As for the input signal, the NTSC system has been described, but the input signal is not limited to this, and the PAL, SECAM system, etc.
A TV signal composed of a large number of scanning lines (for example,
A high-definition TV system such as the MUSE system can also be adopted.

[Third Embodiment] Next, a ladder-type electron source and an image forming apparatus will be described with reference to FIGS.

FIG. 12 is a schematic view showing an example of a ladder-type electron source. In FIG. 12, reference numeral 160 denotes an electron source substrate, and 161 denotes an electron-emitting device. 162, Dx1-D
x10 is a common wiring for connecting the electron-emitting devices 161. The electron-emitting device 161 has an X
A plurality are arranged in parallel in the direction (this is called an element row). A plurality of the element rows are arranged to constitute an electron source. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is,
A voltage equal to or higher than the electron emission threshold is applied to an element row that wants to emit an electron beam.
A voltage lower than the electron emission threshold is applied.

The common wirings Dx2 to Dx9 between the element rows are:
For example, Dx2 and Dx3 can be the same wiring.

FIG. 13 is a schematic diagram showing an example of a panel structure in an image forming apparatus having a ladder-type electron source. 170 is a grid electrode, 171 is an electron-emitting device 1
Vacancy for passing electrons from 61, 172 is Dox
1, Dox2... Doxm are terminals outside the container. 1
73 are G1, G2,... Connected to the grid electrode 170.
The external terminal 174 made of Gn is an electron source substrate in which the common wiring between the element rows is the same wiring.

In FIG. 13, the same portions as those shown in FIGS. 9 and 12 are denoted by the same reference numerals as those shown in these drawings. A major difference between the image forming apparatus shown here and the image forming apparatus having the simple matrix arrangement shown in FIG. 9 is whether or not the grid electrode 170 is provided between the electron source substrate 160 (or 121) and the face plate 136. It is.

In FIG. 13, a grid electrode 170 is provided between the substrate 160 and the face plate 136. The grid electrode 170 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and allows the electron beam to pass through a stripe-shaped electrode provided orthogonally to the ladder-type arrangement element row. One circular opening 171 is provided for each element.
The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in a mesh shape as openings, and a grid may be provided around or near the surface conduction electron-emitting device.

The external terminal 172 and the external terminal 173 are electrically connected to a control circuit (not shown).

In the image forming apparatus of this embodiment, the modulation signals for one line of the image are simultaneously applied to the grid electrode rows in synchronization with the sequential driving (scanning) of the element rows one by one. This makes it possible to control the irradiation of each electron beam to the phosphor and display an image one line at a time.

The image forming apparatus of the present invention can be used not only as a display device for a television broadcast, a display device such as a video conference system or a computer, but also as an image forming device as an optical printer using a photosensitive drum or the like. Can be used.

[0125]

EXAMPLES Hereinafter, the present invention will be described in detail with reference to specific examples, but the present invention is not limited to these examples, and each element within a range in which the object of the present invention is achieved. And those in which the design has been replaced or changed.

Example 1 An element as shown in FIG. 1 was prepared as a surface conduction electron-emitting device. 1A is a plan view, and FIG. 1B is a cross-sectional view. In FIG. 1, 1 is a substrate,
2, 3 are device electrodes, 4 is a conductive thin film, 5 is an electron emitting portion,
6 is a porous silica layer, L is an element electrode interval, W1 is an element electrode length, and W2 is a length of a portion overlapping with a dot electrode.

Hereinafter, the basic structure and manufacturing method of the element according to the present invention will be described with reference to FIGS. In FIG. 2, the same reference numerals as those in FIG. 1 indicate the same components.

(1) First, quartz glass was used as an insulating substrate, which was thoroughly washed with an organic solvent or the like, and then dried at 120 ° C. Next, a 1.0 Wt% ethanol solution of an organic / inorganic composite transparent homogenous substance comprising silica gel and a saccharide derivative was added to a desired position on the substrate subjected to the above-mentioned washing step, using B
J-type inkjet device (BJ-10 manufactured by Canon)
V).

A specific method for producing this organic-inorganic composite is to dissolve 0.2 g of sucrose isopropylcarbamate and 0.4 g of tetramethoxysilane in 5 g of an ethanol solvent to form a homogeneous solution, and add 1N hydrochloric acid in the solution. .1 g are added and the solution is stirred at room temperature in air for 6 hours.
The reaction was allowed to run for days. By this method, a homogeneous and transparent organic-inorganic composite was obtained. At this time, extraction of sucrose was attempted by using a chloroform solvent by the Soxhlet method, but no sucrose was extracted, and it was confirmed that isopropyl carbamate of sucrose was almost completely dispersed and incorporated in the complex. .

Next, the organic / inorganic composite applied on the substrate was baked at 500 ° C. for 1 hour. As a result, the organic portion disappeared, and a porous silica layer having a large surface area of about 400 m ² / g and having a pore frequency (representing the relative number of pores) as shown in FIG. 21 was obtained (FIG. 21). FIG.
(A)). At this time, the thickness of the silica layer was about 50 nm.

In FIG. 21, I is the integrated bending of the pores, II
Is the distribution curve of the pores. As shown in FIG.
The distribution was large at a diameter of 1.5 nm, and it was found that the diameter was larger than when a linear polymer was used as an organic substance.

FIG. 22 shows an example of infrared absorption spectrum data for identifying a transparent homogeneous organic-inorganic composite. This composite was prepared by blending 1 part by weight of sucrose n-propylcarbamate and 10 parts by weight of tetramethoxysilane and according to the above-mentioned production method. As shown in FIG. 22, the carbonyl (C = O) stretching vibration of sucrose n-propylcarbamate has a wavenumber of 17
It was observed at 07 cm ^-1 , indicating that sucrose n-propylcarbamate interacted with the silica gel matrix. Further, siloxane (Si-O-Si) vibration of the silica gel matrix strongly appears at a wave number of about 1130 cm ^-1 . From these, an organic-inorganic composite transparent homogeneous body can be identified.

(2) Next, the device electrodes 2 and 3 made of Ni were formed on the substrate by photolithography (FIG. 2B). At this time, the electrodes were formed such that the electrode interval L was 20 μm, the device electrode length W1 was 100 μm, and the thickness was about 300 nm.

(3) Next, using a BJ type ink jet apparatus (BJ-10V manufactured by Canon), 70 Wt of water was used.
% IPA + ethylene glycol + PVA is 30Wt%
Palladium monoethanolamine (hereinafter PAME)
(Abbreviated as 1) is 1 Wt%, and is applied on the device electrode treated as described above (FIG. 2C) and dried. This was heated to 300 [deg.] C. to form a fine particle film composed of PdO fine particles, which was used as an electron emitting portion forming thin film 4 (FIG. 2D).

The average particle size of the fine particle film was 9 nm. The thickness of the electron emitting portion forming thin film 4 is 10 n.
m, the sheet resistance was 5 × 10 ⁴ Ω / port.

Next, a voltage is applied between the device electrodes 2 and 3,
The electron-emitting portion 5 was formed by subjecting the electron-emitting portion forming thin film 4 to an energizing process (forming process) (FIG. 2).
(E)). Observation with a microscope did not reveal any portion where the width of the electron-emitting portion 5 was extremely widened.

The conductive thin film made of palladium oxide fine particles similarly formed on a quartz substrate without element electrodes had a thickness of about 30 nm. EPMA (Electron
When the film thickness was measured by Probe Micro Analysis, the cross section of the dot showed a substantially uniform film thickness as shown in FIG.

A plurality of devices as described above were prepared, and the variation ΔIe of the emission current between the devices was evaluated.
e was 8%.

As described above, in the electron-emitting device formed by the method as in the first embodiment, a uniform electron-emitting portion can be formed by eliminating a portion having a non-uniform film thickness.

(Embodiment 2) This embodiment will be described with reference to FIGS. 3 and 4, the same reference numerals as those in FIG. 1 indicate the same components.

(1) After washing and drying in the same manner using the same substrate as in Example 1, an element electrode similar to that in Example 1 was formed (FIG. 3A).

(2) Next, a 1.0 Wt% ethanol solution of an organic / inorganic composite transparent homogeneous material comprising silica gel and a saccharide derivative similar to that of Example 1 was applied between the device electrodes by an ink jet method (FIG. b)). The specific production method of this composite was the same as in Example 1. At this time, the solution adheres to a part of the electrode, but since the silica becomes porous in the next baking step, conduction between the conductive film and the electrode is possible and there is no problem.

(3) This was fired in the same manner as in Example 1 to form a porous silica layer having a large area of about 400 m ² / g (FIG. 3C). This pore diameter was the same as in Example 1.

(4) Next, droplets of the same solution as in the first embodiment are applied to the electrodes 2 and 3 using the same droplet applying means as in the first embodiment.
An intermediate layer was provided (FIG. 4D), and a heat treatment was performed in the same manner as in Example 1 to form a fine particle film made of PdO fine particles, thereby forming a conductive thin film 4 (FIG. 4E). Further, a conductive treatment was performed in the same manner as in Example 1 to form an electron-emitting portion 5 (FIG. 4F). These steps were repeated to form a plurality of devices.

When the variation ΔIe of the emission current among the plurality of electron-emitting devices prepared by the above method was evaluated, ΔIe was 9%. Further, there was no coating unevenness, and the film thickness between the elements was uniform, so that the variation in resistance was small.

Comparative Example A plurality of devices were formed in the same manner as in Example 1 except that the porous silica layer was not provided on the substrate, and the variation ΔIe of the emission current between the devices was evaluated. Met.

(Embodiment 3) In this embodiment, an image forming apparatus was manufactured as follows. A method for manufacturing the electron source of the image forming apparatus according to the present embodiment will be described with reference to FIGS.

FIG. 15 is a plan view of a part of the electron source, and FIG.
FIG. 16 is a sectional view taken along the line AA 'in FIG. 15 to 18, the same reference numerals denote the same components. Here, 1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film,
Reference numeral 122 denotes an X-direction wiring (also referred to as a lower wiring) corresponding to Dxm in FIG. 8, 123 denotes a Y-direction wiring (also referred to as an upper wiring) corresponding to Dyn in FIG. 8, 181 denotes an interlayer insulating layer, and 182 denotes an element electrode and a lower electrode. This is a contact hole for electrical connection with the wiring 122.

{Step-a} On a substrate 1 in which a 0.5 μm thick silicon oxide film is formed on a cleaned blue plate glass by a sputtering method, a 5 nm thick Cr, 600 nm thick After sequentially laminating Au, a photoresist (manufactured by AZ1370 Hoechst) was spin-coated with K by a spinner and baked, and then a photomask image was exposed and developed.
A resist pattern for the lower wiring 122 is formed.
The u / Cr deposited film was wet-etched to form a lower wiring 122 having a desired shape (FIG. 17A).

[Step-b] Next, an interlayer insulating layer 181 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering (FIG. 17B).

{Step-c} A photoresist pattern for forming a contact hole 182 was formed in the silicon oxide film deposited in the step b, and the interlayer insulating layer 181 was etched using the photoresist pattern as a mask to form a contact hole 182. Etching is RIE using CF ₄ and H ₂ gas
(Reactive Ion Etching) method (Fig. 17
(C)).

{Step-d} Next, an ethanol solution of silica gel and a saccharide derivative similar to that of Example 1 was used in the vicinity of a desired electron-emitting device producing site by using a BJ-type ink jet apparatus (BJ-10V manufactured by Canon). Example 1
A heating and baking treatment was performed in the same manner as described above (FIG. 17C).

{Step-e} Thereafter, a pattern to be the element electrode spacing between the element electrodes 2 and 3 and the element electrode L is formed by a photoresist (RD
-2000N-41 manufactured by Hitachi Chemical Co., Ltd.), and a 5 nm-thick Ti and a 100 nm-thick Ni were sequentially deposited by a vacuum evaporation method. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrode interval L
Is 3 μm and the device electrode length W is 300 μm.
No. 3 was formed (FIG. 17D).

{Step-f} After forming a photoresist pattern of the upper wiring 123 on the device electrodes 2 and 3, the thickness is 5 n.
Then, m Ti and 500 nm thick Au were sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 123 having a desired shape (FIG. 18E).

{Step-g} The organic palladium-containing solution used in Example 1 was applied between the device electrodes 2 and 3 using the same droplet applying means (not shown) as in Example 1, and was heated at 300 ° C. 1
A heating and baking treatment was performed for 0 minutes (FIG. 18F). The conductive thin film 4 thus formed is a thin film mainly composed of fine particles of Pd, and has a maximum thickness of 30 nm.
The sheet resistance value Rs was 2 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure in which not only a state in which the fine particles are individually dispersed and arranged, but also a state in which the fine particles are adjacent to each other or overlap (including an island shape). The particle size refers to the diameter of fine particles whose particle shape can be recognized in the above state.

{Step-h} After forming a pattern such that a resist is applied to portions other than the contact hole 182, Ti having a thickness of 5 nm and a thickness of 500 nm are formed by vacuum evaporation.
Of Au were sequentially deposited. Unnecessary portions were removed by lift-off to bury the contact holes 182 (FIG. 18G).

Through the above steps, the lower wiring 1 is formed on the insulating substrate 1.
22, the interlayer insulating layer 181, the upper wiring 123, the device electrode 2,
3. Conductive thin film 4 and the like were formed.

Next, a display panel was constructed using the electron source manufactured as described above. A method of manufacturing the display panel of the image forming apparatus according to the present embodiment will be described with reference to FIGS. The reference numerals in both figures are as described above.

After fixing the substrate 121 on which a large number of flat-type electron-emitting devices have been manufactured as described above on the rear plate 131, the face plate 136 (the fluorescent film 134 is formed on the inner surface of the glass substrate 133) 5 mm above the substrate 121. And the metal back 135 are formed).
2, the face plate 136, the support frame 1
32, frit glass was applied to the joint of the rear plate 131, and baked at 400 ° C. in the air for 10 minutes to seal (FIG. 9). The fixing of the substrate 121 to the rear plate 131 was performed with frit glass.

The fluorescent film 134 is made of only a phosphor in the case of monochrome, but in the present embodiment, the phosphor is adopted in a stripe shape, a black stripe is formed first, and each color phosphor is applied to the gap. Then, a fluorescent film 134 was manufactured. As a material for the black stripe, a material containing graphite as a main component, which is commonly used, was used, and a slurry method was used as a method for applying a phosphor on a glass substrate.

A metal back 135 is usually provided on the inner side of the fluorescent film 134. The metal back performs a smoothing process (usually called “filming”) on the inner surface of the fluorescent film 134 after the fluorescent film is formed, and thereafter,
It was produced by vacuum deposition of Al.

In the face plate 136, a transparent electrode may be provided on the outer surface side of the fluorescent film 134 in order to further increase the conductivity of the fluorescent film 134, but in this embodiment, sufficient conductivity is obtained only by the metal back. It was omitted because it was obtained.

At the time of performing the above-mentioned sealing, in the case of color, since the phosphors of each color must correspond to the electron-emitting devices, sufficient alignment was performed.

After the atmosphere in the glass container (envelope) completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), a sufficient degree of vacuum is reached.
A voltage was applied between the electrodes 2 and 3 of the electron-emitting device 124 through ox1 to Doxm and Doy1 to Doyn, and the conductive thin film 4 was subjected to an energizing process (forming process) to produce the electron-emitting portion 5. FIG. 5 shows a voltage waveform of the forming process.

In FIG. 5, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 ms,
T2 is set to 10 ms, the peak value of the triangular wave (peak voltage at the time of forming) is set to 5 V, and the forming process is performed at about 1.
This was performed in a vacuum atmosphere of 3 × 10 ⁻⁴ Pa for 60 seconds.

Next, the same T1 and T2 as the forming,
The activation treatment was performed while measuring the device electrode If and the emission current Ie with a rectangular wave having a peak value of 14 V and a degree of vacuum of 2.6 × 10 ⁻⁴ Pa.

Next, after reducing the pressure to about 10 ⁻⁵ Pa, the exhaust pipe (not shown) was welded by heating with a gas burner, and the envelope was sealed.

Using the display panel completed as described above, an image forming apparatus is formed (a driving circuit is not shown), and external terminals Dox1 to Doxm, Doy1 to Dox1 are connected to each electron-emitting device.
Electrons are emitted by applying a scanning signal and a modulation signal from the signal generation means (not shown) through Doyn, respectively, and several k are applied to the metal back 135 through the high voltage terminal Hv.
A high voltage of V or more is applied to accelerate the electron beam, and the fluorescent film 1
The image was displayed by exciting and emitting the fluorescent film 134 by colliding the fluorescent film 34 with the fluorescent film 134.

(Embodiment 4) FIG. 19 shows image information provided from various image information sources such as television broadcasting on a display panel using the surface conduction electron-emitting device described above as an electron beam source. FIG. 3 is a block diagram showing an example of a display device configured to be able to display. In the figure, 6100 is a display panel, 6101 is a display panel driving circuit, 6102 is a display panel controller, 6103 is a multiplexer,
6104 is a decoder, 6105 is an input / output interface circuit, 6106 is a CPU, 6107 is an image generation circuit,
6108, 6109 and 6110 are image memory interface circuits, 6111 is an image input interface circuit, 6112 and 6113 are TV signal receiving circuits,
Reference numeral 6114 denotes an input unit.

When the image display apparatus receives a signal including both video information and audio information, such as a television signal, the image display apparatus naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the features of the present invention are omitted.

Hereinafter, the function of each unit will be described along the flow of the image signal.

First, the TV signal receiving circuit 6113 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The format of the received TV signal is not particularly limited, and may be, for example, various systems such as the NTSC system, the PAL system, and the SECAM system. Further, a TV signal (for example, a so-called high-definition TV including the MUSE system) composed of a larger number of scanning lines than the above is suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. Signal source. The TV signal received by the TV signal receiving circuit 6113 is output to the decoder 6104.

The TV signal receiving circuit 6112 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similarly to the TV signal receiving circuit 6113, the type of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 6104.

The image input interface circuit 61
Reference numeral 11 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner.
Is output to

Image memory interface circuit 611
1 is a video tape recorder (hereinafter abbreviated as VTR)
The image signal fetched by the circuit for fetching the image signal stored in the memory is output to the decoder 6104.

Image memory interface circuit 610
Reference numeral 9 denotes a circuit for taking in an image signal stored in the video disk,
04 is output.

The image memory interface circuit 6108 is a circuit for taking in an image signal from a device storing still image data, such as a so-called still image disk.
Is input to

The input / output interface circuit 610
Reference numeral 5 denotes a circuit for connecting the display device to an external computer, a computer network, or an output device such as a printer. Image data and text
In addition to inputting and outputting graphic information, control signals and numerical data can be input and output between the CPU 6106 included in the display device and the outside in some cases.

The image generation circuit 6107 is a circuit for generating display image data based on image data and character / graphic information input from the outside via the input / output interface circuit 6105. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code, a processor for performing image processing, and the like are provided. First, a circuit necessary for generating an image is incorporated.

The display device image data generated by this circuit is output to the decoder 6104, but may be output to an external computer network or printer via the input / output interface circuit 6105 in some cases. .

The CPU 6106 mainly performs operation control of the image display apparatus and operations related to generation, selection, and editing of a display image. For example, the multiplexer 6103
The control signal is output to the display panel, and the image signal to be displayed on the display panel is appropriately selected or combined. In this case, a control signal is generated for the display panel controller 6102 in accordance with the image signal to be displayed, and the display frequency, the scanning method (for example, interface or non-interface), and the number of scanning lines on one screen are displayed. The operation of the device is appropriately controlled.

Further, image data, character / graphic information is directly output to the image generation circuit 6107, or an external computer or memory is accessed via the input / output interface circuit 6105 to access the image data, character / graphic data. Enter graphic information. The CPU 6106
Of course may be related to work for other purposes. For example, it may directly relate to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, it may be connected to an external computer network via the input / output interface circuit 6105 as described above, and work such as numerical calculation may be performed in cooperation with an external device.

The input / output unit 6114 is connected to the CPU 6.
The user inputs commands, programs, data, and the like to the key 106. For example, various input devices such as a joystick, a barcode reader, and a voice recognition device can be used in addition to a keyboard and a mouse.

The decoder 6104 has the
6113 is a circuit for reciprocally converting various image signals inputted from 6113 into three primary color signals or a luminance signal and an I signal and a Q signal. It is preferable that the decoder 6104 has an internal image memory as shown by a dotted line in FIG. This is because, for example, the MUSE method or the like, the provision of an image memory for the inverse conversion facilitates the display of a still image, or the image generation circuit 610
This is because, in cooperation with the CPU 7 and the CPU 6106, there is an advantage that image processing and editing including image thinning, interpolation, enlargement, reduction, and synthesis can be easily performed.

The multiplexer 6103 is connected to the C
A display image is appropriately selected based on a control signal input from the PU 6106. That is, the multiplexer 6103 selects a desired image signal from the inversely converted image signals input from the decoder 6104, and outputs the selected image signal to the drive circuit 6101. In that case, by switching and selecting an image signal within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

The display panel controller 6102 is a circuit for controlling the operation of the driving circuit 6101 based on the control signal input from the CPU 6106.

First, as a signal related to the basic operation of the display panel, a signal for controlling an operation sequence of a power supply (not shown) for driving the display panel is output to the drive circuit 6101. In addition, a signal for controlling, for example, an image display frequency and a scanning method (for example, interface or non-interface) is output to the driving circuit 6101 as a method related to the display panel driving method.

In some cases, a control signal related to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 6101.

The drive circuit 6101 is a circuit for generating a drive signal to be applied to the display panel 6100, and includes an image signal input from the multiplexer 6103 and the display panel controller 6100.
The operation is based on a control signal input from 102.

The function of each unit has been described above. With the configuration illustrated in FIG. 19, the display device according to the present embodiment can display image information input from various image information sources on the display panel 61.
00 can be displayed. That is, various image signals including television broadcasting are supplied to the decoder 61.
After the inverse conversion at 04, the multiplexer 6103
And is input to the drive circuit 6101 as appropriate. On the other hand, the display panel controller 6102
Generates a control signal for controlling the operation of the driving circuit 6101 in accordance with an image signal to be displayed. Drive circuit 610
1 applies a drive signal to the display panel 6100 based on the image signal and the control signal. Thus, an image is displayed on display panel 6100.
These series of operations are totally controlled by the CPU 6106.

In the present image display device, not only the image memory incorporated in the decoder 6104, the image generation circuit 6107 and the information selected from the information are displayed, but also the image information to be displayed is Expansion,
Image processing such as reduction, rotation, movement, edge enhancement, thinning, interpolation, color conversion, image aspect ratio conversion, etc.,
It is also possible to perform image editing such as combining, erasing, connecting, exchanging, and fitting. Although not specifically mentioned in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present image display apparatus can be used for a television broadcast display device, a video conference terminal device, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor,
It is possible to combine functions such as game consoles with one unit,
Extremely wide range of applications for industrial or democratic use.

FIG. 19 shows only an example of the configuration of a display device using a display panel using a surface conduction electron-emitting device as an electron beam source, and the present invention is not limited to this. Needless to say. For example, FIG.
Circuits relating to functions unnecessary for the purpose of use among the nine components may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied to a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present image display device, in particular, it is easy to reduce the thickness of a display panel using a surface conduction electron-emitting device as an electron beam source, so that the depth of the display device can be reduced. In addition, the display panel using the surface conduction electron-emitting device as the electron beam source is easy to enlarge the screen, has high brightness, and has excellent viewing angle characteristics. It is possible to display with good visibility.

[0195]

According to the present invention, by using the ink jet type droplet applying means and forming the porous silica layer on the substrate, the thickness of the conductive thin film is made uniform, The manufacturing process is simplified, the device can be easily formed on a large-area substrate at low cost and easily, and the electron emission characteristics of the obtained electron emission device are uniform. An electron source, a display panel, and a method for manufacturing an image forming apparatus using the element can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic plan view and a front view showing a configuration of a surface conduction electron-emitting device to which the present invention can be applied.

FIG. 2 is a schematic view illustrating a method for manufacturing a surface conduction electron-emitting device to which Embodiment 1 of the present invention can be applied.

FIG. 3 is a schematic view illustrating a method for manufacturing a surface conduction electron-emitting device to which Embodiment 2 of the present invention can be applied.

FIG. 4 is a schematic view illustrating a method for manufacturing a surface conduction electron-emitting device to which Embodiment 2 of the present invention can be applied.

FIG. 5 is a schematic diagram showing an example of a voltage waveform in a current forming process that can be employed in manufacturing a surface conduction electron-emitting device to which the present invention can be applied.

FIG. 6 is a schematic diagram showing one example of a vacuum processing apparatus having a measurement evaluation function.

FIG. 7 is a graph showing an example of the relationship between the emission current Ie, the device current If, and the device voltage Vf for a surface conduction electron-emitting device to which the present invention can be applied.

FIG. 8 is a schematic diagram showing an example of an electron source having a simple matrix arrangement to which the present invention can be applied.

FIG. 9 is a schematic diagram illustrating an example of a display panel of an image forming apparatus having a simple matrix arrangement to which the present invention can be applied.

FIG. 10 is a schematic view showing one example of a fluorescent film.

FIG. 11 is a block diagram showing an example of a driving circuit for performing display on the image forming apparatus in accordance with an NTSC television signal.

FIG. 12 is a schematic view showing an example of an electron source having a ladder arrangement to which the present invention can be applied.

FIG. 13 is a schematic diagram illustrating an example of a display panel of an image forming apparatus having a ladder arrangement to which the present invention can be applied.

FIG. 14 is a diagram showing a film thickness distribution of a conductive thin film measured in Example 1.

FIG. 15 is a partial plan view of the electron source according to the present invention.

16 is a sectional view of the electron source taken along line AA 'of FIG.

17A to 17D are manufacturing steps (a) to (d) of the electron source in FIG.
FIG.

18A to 18G are manufacturing steps (e) to (g) of the electron source in FIG.
FIG.

FIG. 19 is a schematic configuration diagram illustrating an example of a display device.

FIG. 20 is a plan view showing an example of a conventional electron-emitting device.

FIG. 21 is a diagram showing an example of a pore frequency curve of porous silica obtained by firing the organic / inorganic composite transparent homogeneous material according to the present invention.

FIG. 22 is a diagram showing an example of an infrared absorption spectrum for identifying a transparent homogeneous organic-inorganic composite according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2, 3 Device electrode 4 Conductive thin film 5 Electron emission part 6 Porous silica layer 7 Drop applying means 8 Drop of electron emission material 10 Drop of organic-inorganic composite transparent homogeneous solution 100 Device electrode 2, 3 Ammeter 101 for measuring the device current If flowing through the conductive thin film 4 between them 101 power supply for applying the device voltage Vf to the electron-emitting device 102 current for measuring the emission current Ie emitted from the electron-emitting portion 5 A high-voltage power supply 104 for applying a voltage to the anode electrode 104 and the emission current Ie emitted from the electron emission portion of the element
Anode electrode 105 for capturing air 105 Vacuum device 106 Exhaust pump 121 Electron source substrate 122 X-direction wiring 123 Y-direction wiring 124 Surface conduction electron-emitting device 125 Connection 131 Rear plate 132 Support frame 133 Glass substrate 134 Fluorescent film 135 Metal back 136 Face plate 137 high-voltage terminal 138 envelope 141 black conductive material 142 phosphor 151 display panel 152 scanning circuit 153 control circuit 154 shift register 155 line memory 156 synchronization signal separation circuit 157 modulation signal generator 160 electron source substrate 161 electron emission element 162 Dx1 to Dx10 are common wirings for wiring the electron-emitting devices 161 170 Grid electrodes 171 Holes 172 for electrons to pass through 172 Dox1 to Dox2. G1, G2 ... connected to the grid electrode 170
Gn outer terminal 174 Electron source 181 Interlayer insulating layer 182 Contact hole 6100 Display panel 6101 Drive circuit 6102 Display panel controller 6103 Multiplexer 6104 Decoder 6105 Input / output interface circuit 6106 CPU 6107 Image generation circuit 6108, 6109, 6110 Image memory interface Circuit 6111 Image input interface circuit 6112, 6113 TV signal receiving circuit 6114 Input unit Vx, Va DC voltage source

Claims (10)

[Claims] 1. An electron emission device comprising: applying a droplet of a solution containing a material for forming a conductive thin film between opposed electrodes on a substrate to form a conductive thin film; and forming an electron emission portion in the conductive thin film. A method for producing an element, comprising: forming a porous layer in advance between opposing electrodes on the substrate; and applying the droplet. 2. The method according to claim 1, wherein the porous layer is a porous silica layer. 3. The porous silica layer uses an organic-inorganic composite as a raw material, and uses an inorganic porous substance obtained when the organic portion is eliminated by heating and firing the composite. 3. The method for manufacturing an electron-emitting device according to item 2. 4. The organic / inorganic composite used for the porous silica layer is an organic / inorganic composite obtained by uniformly dispersing a saccharide derivative having a urethane bond, a urea bond and / or an amide bond in a matrix of an inorganic oxide. The method for producing an electron-emitting device according to claim 2, wherein the method is an inorganic composite transparent homogeneous body. 5. The method for manufacturing an electron-emitting device according to claim 4, wherein said saccharide derivative is a transparent homogeneous organic-inorganic composite material, which is isopropyl carboxylate of sucrose. 6. The method for manufacturing an electron-emitting device according to claim 4, wherein the matrix of the inorganic oxide is a transparent homogeneous organic-inorganic composite which is a matrix of silica gel. 7. The method for manufacturing an electron-emitting device according to claim 1, wherein the application of the droplet is performed by an ink-jet method. 8. A method for manufacturing an electron source, comprising: an electron-emitting device; and means for applying a voltage to the electron-emitting device, wherein the method for manufacturing an electron-emitting device according to claim 1 is performed. A method for manufacturing an electron source, characterized by using: 9. Manufacture of a display panel comprising: an electron source including an electron-emitting device and a means for applying a voltage to the electron-emitting device; and a phosphor film that receives and emits light from the electron-emitting device. A method for manufacturing a display panel, comprising using the method for manufacturing an electron-emitting device according to claim 1. 10. An electron source comprising: an electron-emitting device; and a voltage applying means for applying voltage to the electron-emitting device; a phosphor film that receives and emits electrons emitted from the electron-emitting device; A method for manufacturing an image forming apparatus, comprising: a driving circuit for controlling a voltage applied to an electron-emitting device; wherein the method for manufacturing an electron-emitting device according to claim 1 is used. Manufacturing method of an image forming apparatus.