JPH11307417A - Method for observing cross-section machined by focused ion beam - Google Patents
Method for observing cross-section machined by focused ion beamInfo
- Publication number
- JPH11307417A JPH11307417A JP10108310A JP10831098A JPH11307417A JP H11307417 A JPH11307417 A JP H11307417A JP 10108310 A JP10108310 A JP 10108310A JP 10831098 A JP10831098 A JP 10831098A JP H11307417 A JPH11307417 A JP H11307417A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- section
- cross
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 15
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 8
- 230000004304 visual acuity Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/303—Electron or ion optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、不良解析などのた
めに集束イオンビームを使って半導体デバイスの特定位
置にて断面を形成するための加工を行い、断面を観察す
る方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a cross section at a specific position of a semiconductor device using a focused ion beam for failure analysis and the like, and for observing the cross section.
【０００２】[0002]
【従来の技術】ＬＳＩ（大規模集積回路）等の高集積
化、微細化に伴い、開発工程や製造工程におけるＬＳＩ
の断面加工、断面観察を集束イオンビーム装置で実施す
る技術が示されている。特開平２−１５２１５５号公報
によると走査型イオン顕微鏡機能により断面加工部の位
置出しを行い、さらにマスクレスエッチング機能により
断面加工部を一面として、角形に穴あけし、所望の断面
部を露出させた後、試料を傾斜させて、断面部をイオン
ビーム照射方向に向けさせ、再び走査イオン顕微鏡機能
により断面加工部を観察するものである。2. Description of the Related Art With the increase in integration and miniaturization of LSIs (large-scale integrated circuits) and the like, LSIs in development processes and manufacturing processes
For performing cross-section processing and cross-sectional observation of a focused ion beam device. According to Japanese Patent Application Laid-Open No. 2-152155, a cross-section processed portion is located by a scanning ion microscope function, and a square cross-section is formed by a maskless etching function to expose a desired cross-section portion. Thereafter, the sample is tilted so that the cross section is directed in the ion beam irradiation direction, and the cross section processed portion is observed again by the scanning ion microscope function.
【０００３】[0003]
【発明が解決しようとする課題】上記方法で作製した断
面部を走査イオン顕微鏡機能により観察する際、特開平
２−１５２１５５号公報に記載のビーム電流２〜３０ｐ
Ａで観察倍率を１００００倍以上とすると、集束イオン
ビーム照射により断面がエッチングされてしまい観察す
べき形状が失われてしまうという問題があった。また十
分な像分解能は得られず断面の微細構造が鮮明に観察で
きないという問題があった。When observing the cross-section produced by the above method using a scanning ion microscope, a beam current of 2 to 30 ps described in JP-A-2-152155 is used.
If the observation magnification is 10,000 or more in A, there is a problem that the cross section is etched by the focused ion beam irradiation and the shape to be observed is lost. In addition, there is a problem that a sufficient image resolution cannot be obtained and a fine structure of a cross section cannot be clearly observed.
【０００４】特公昭６２−６０６９９号公報には加工物
の画像を検出する際、ビームレベルを低減する方法が記
載されているが、加工した後に断面観察を行うことにつ
いてはなにもふれていない。ビーム径は０．５μｍであ
り、断面観察には大きすぎるため、前記問題の解決策に
はならない。Japanese Patent Publication No. Sho 62-60699 discloses a method of reducing a beam level when detecting an image of a workpiece, but does not mention anything about cross-sectional observation after processing. . Since the beam diameter is 0.5 μm, which is too large for cross-sectional observation, it is not a solution to the above problem.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
本発明では、液体金属イオン源と前記イオン源から引き
出されたイオンビームを集束するための集束レンズ系と
前記イオンビームを試料上でオン／オフするためのブラ
ンキング電極とからなる集束イオンビーム発生部と、
前記集束イオンビームを制限するための制限絞りと、前
記集束イオンビームを偏向走査するための偏向電極と、
前記集束イオンビームが照射される試料を載置し移動可
能な試料ステージと、前記集束イオンビームを照射する
ことにより発生する二次荷電粒子を検出する二次荷電粒
子検出器と前記二次荷電粒子検出器の信号に基づいて前
記試料表面の画像を表示するためのディスプレイとから
なる集束イオンビーム装置を用いて試料の所望の箇所に
前記集束イオンビームを照射し、スパッタエッチングす
ることにより断面を加工する第一の工程と、少なくとも
液体金属イオン源からのエミッション電流を制御して、
前記集束イオンビーム電流とビーム径を変更した後、前
記断面に前記集束イオンビームを走査しながら照射し、
前記断面から発生した二次荷電粒子を前記二次荷電粒子
検出器で検出し、前記二次荷電粒子検出器の信号に基づ
いて前記試料表面の画像をディスプレイに表示し、前記
断面の観察を行う第二の工程からなること特徴とする集
束イオンビームによる断面加工観察方法を提供する。According to the present invention, there is provided a liquid metal ion source, a focusing lens system for focusing an ion beam extracted from the ion source, and an ion beam on a sample. A focused ion beam generating section comprising a blanking electrode for turning on / off,
A limiting aperture for limiting the focused ion beam, a deflection electrode for deflecting and scanning the focused ion beam,
A sample stage on which a sample to be irradiated with the focused ion beam is placed and movable, a secondary charged particle detector for detecting a secondary charged particle generated by irradiating the focused ion beam, and the secondary charged particle Using a focused ion beam device comprising a display for displaying an image of the sample surface based on a signal from a detector, irradiating the focused ion beam to a desired portion of the sample and processing the cross section by sputter etching A first step to control the emission current from at least the liquid metal ion source,
After changing the focused ion beam current and the beam diameter, irradiating the cross section with the focused ion beam while scanning,
Secondary charged particles generated from the cross section are detected by the secondary charged particle detector, an image of the sample surface is displayed on a display based on a signal of the secondary charged particle detector, and the cross section is observed. A cross-sectional processing observation method using a focused ion beam, which comprises the second step, is provided.
【０００６】[0006]
【実施例】図１に基づき装置構成について説明する。本
発明を実施するための装置構成例は図１に示すように、
液体金属イオン源１と、前記液体金属イオン源１から引
き出されたイオンビームを集束するための集束レンズ系
として集束レンズ２と対物レンズ５と、前記イオンビー
ムを制限するための制限絞り１５と、前記イオンビーム
を試料上でオン／オフするためのブランキング電極３と
からなる集束イオンビーム発生部が装着されている。ま
た、集束イオンビーム６軸には、前記集束イオンビーム
を偏向走査するための偏向電極４が配置され、更に、前
記集束イオンビーム６が照射される試料９を載置し移動
可能な試料ステージ１０と、前記集束イオンビーム６を
照射することにより発生する二次荷電粒子７ａ、７ｂを
検出する二次荷電粒子検出器８ａ、８ｂと、二次荷電粒
子検出器８ａ、８ｂにて検出された二次荷電粒子７ａ、
７ｂ強度に基づいて試料９表面の画像を標示するディス
プレイ１４等から構成される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An apparatus configuration will be described with reference to FIG. An example of an apparatus configuration for implementing the present invention is as shown in FIG.
A liquid metal ion source 1, a focusing lens 2 and an objective lens 5 as a focusing lens system for focusing the ion beam extracted from the liquid metal ion source 1, a limiting aperture 15 for limiting the ion beam, A focused ion beam generator including a blanking electrode 3 for turning on / off the ion beam on the sample is mounted. A deflection electrode 4 for deflecting and scanning the focused ion beam is disposed on the focused ion beam 6 axis, and a sample stage 10 on which a sample 9 to be irradiated with the focused ion beam 6 is placed and movable. And secondary charged particle detectors 8a and 8b that detect secondary charged particles 7a and 7b generated by irradiating the focused ion beam 6, and secondary charged particle detectors 8a and 8b detected by the secondary charged particle detectors 8a and 8b. Next charged particles 7a,
The display 14 is configured to display an image of the surface of the sample 9 based on the 7b intensity.
【０００７】二次荷電粒子検出器８ａ、８ｂは、二次電
子７ａを検出する二次電子検出器８ａと二次イオン７ｂ
を検出する二次イオン検出器８ｂよりなる。なお、二次
荷電粒子検出器８ａ、８ｂを１つの検出器にて構成し、
スイッチにて二次電子検出器８ａと、二次イオン検出器
８ｂに切り替える構成としてもよい。二次荷電粒子検出
器８ａ、８ｂからの信号は、Ａ／Ｄ変換器１１に入力
し、Ａ／Ｄ変換される。 Ａ／Ｄ変換された二次荷電粒
子７ａ、７ｂ信号は、演算機（図示せず）にて、ディス
プレイ１４にて画像表示するための演算が行われる。液
体金属イオン源１、集束レンズ２、ブランキング電極
３、偏向電極４及び対物レンズ５の電力は、イオン光学
系制御電源１３を介して、演算装置（図示せず）からの
信号に基づいて供給される。[0007] The secondary charged particle detectors 8a and 8b are composed of a secondary electron detector 8a for detecting secondary electrons 7a and a secondary ion 7b.
Is detected by the secondary ion detector 8b. In addition, the secondary charged particle detectors 8a and 8b are configured by one detector,
The configuration may be such that a switch is used to switch between the secondary electron detector 8a and the secondary ion detector 8b. The signals from the secondary charged particle detectors 8a and 8b are input to the A / D converter 11 and A / D converted. The A / D-converted signals of the secondary charged particles 7a and 7b are processed by a calculator (not shown) to display an image on the display 14. The power of the liquid metal ion source 1, the focusing lens 2, the blanking electrode 3, the deflection electrode 4, and the objective lens 5 is supplied via the ion optical system control power supply 13 based on a signal from a calculation device (not shown). Is done.
【０００８】以下集束イオンビーム装置を用いた断面加
工観察方法を図２を用いて説明する。断面観察する試料
９としてＬＳＩを用いた。図２（ａ）に示すように観察
したい試料９ＬＳＩのコンタクトホール３３を含む走査
イオン顕微鏡像を求める。なお、コンタクトホール３３
の近傍に配線３２が観察されている。走査イオン顕微鏡
像は、集束イオンビーム６を試料９表面に走査させなが
ら照射し、試料９表面から発生する二次荷電粒子である
二次電子７ａ又は二次イオン７ｂを検出することにより
得られる。図２（ａ）の画像により断面形成の位置３４
を設定する。Hereinafter, a cross-section processing observation method using a focused ion beam apparatus will be described with reference to FIG. An LSI was used as a sample 9 for cross-sectional observation. As shown in FIG. 2A, a scanning ion microscope image including the contact hole 33 of the sample 9 LSI to be observed is obtained. The contact hole 33
Is observed in the vicinity of. The scanning ion microscope image is obtained by irradiating the focused ion beam 6 while scanning the surface of the sample 9 and detecting secondary electrons 7a or secondary ions 7b as secondary charged particles generated from the surface of the sample 9. According to the image of FIG.
Set.
【０００９】次に図２（ｂ）に示すようにコンタクトホ
ール３３を含む領域３５をＦＩＢ−ＣＶＤ法で膜付けす
る。ＦＩＢ−ＣＶＤ法はガス銃（図示せず）により試料
表面に原料ガスを吸着させ、２０〜３０ＫｅＶのエネル
ギーで加速したイオンビーム６を領域３５の範囲にて走
査させて照射する。このことにより、照射領域３５のみ
に選択的に膜を形成する方法である。本実施例では原料
ガスにＷ（ＣＯ）6を用い、タングステン膜を形成して
いる。勿論、ガスを変えて他の金属膜形成によっても本
発明は実施可能である。この膜付けを長時間施すと、試
料の膜付け領域表面が平坦化されるため、配線パターン
が走査イオン顕微鏡像上では見にくくなるので、平坦化
される前に膜付けを終了したほうが断面形成は容易にな
る。Next, as shown in FIG. 2B, a region 35 including the contact hole 33 is formed by FIB-CVD. In the FIB-CVD method, a source gas is adsorbed on a sample surface by a gas gun (not shown), and an ion beam 6 accelerated with energy of 20 to 30 KeV is scanned and irradiated in a region 35. This is a method of selectively forming a film only in the irradiation region 35. In this embodiment, a tungsten film is formed using W (CO) 6 as a source gas. Of course, the present invention can be implemented by changing the gas and forming another metal film. If this film deposition is performed for a long time, the surface of the film deposition region of the sample is flattened, and the wiring pattern becomes difficult to see on a scanning ion microscope image. It will be easier.
【００１０】この膜付け後、図2（ｃ）に示すようにエ
ッチング領域３６に集束イオンビーム６を照射してエッ
チング加工を行う。エッチング領域３６は、ほぼ矩形形
状であり、その一辺は断面形成の位置３４になるように
設定される。粗い穴あけは高電流ビーム（例えば２〜１
０ｎＡ）でなされ、また、仕上げ加工は中電流ビーム
（例えば３０ｐＡ〜２ｎＡ）で観察したい断面位置３４
に照射することにより行われ、図２（ｄ）に示すよう
に、側壁断面３７が形成される。After this film formation, the etching process is performed by irradiating the focused ion beam 6 to the etching region 36 as shown in FIG. 2 (c). The etching region 36 has a substantially rectangular shape, and one side thereof is set to be a position 34 for forming a cross section. Coarse drilling can be performed with a high current beam (e.g.
0 nA), and the finishing is performed at a cross-sectional position 34 to be observed with a medium current beam (for example, 30 pA to 2 nA).
2D, thereby forming a side wall cross section 37 as shown in FIG.
【００１１】次に、イオンビーム照射方向に試料９の加
工断面３７が露呈するように試料ステージ１０を傾斜さ
せる。この断面３７を比較的低電流ビーム（例えば１ｐ
Ａ以下）で走査イオン顕微鏡により観察する。尚、断面
観察したい異物などの異状部分が小さい場合などは、膜
付けしないで断面形成を実施することもある。このよう
な場合にも上述の操作を行うことで、より正確な断面形
状が得られる。Next, the sample stage 10 is tilted so that the processed cross section 37 of the sample 9 is exposed in the ion beam irradiation direction. The cross section 37 is formed by a relatively low current beam (for example, 1p).
A and below) and observed with a scanning ion microscope. When an abnormal portion such as a foreign substance to be observed in cross section is small, the cross section may be formed without attaching a film. In such a case, a more accurate cross-sectional shape can be obtained by performing the above operation.
【００１２】上記方法で作成した断面３７を走査イオン
顕微鏡機能により観察する際、ビーム制限絞り径、レン
ズ集束条件を調整することによりビーム電流、ビーム径
を調整することは周知の事実である。本発明ではビーム
制限絞り径、レンズ集束条件だけでなく液体金属イオン
源からのエミッション電流を制御して、前記集束イオン
ビーム電流とビーム径を断面観察に利用可能な大きさに
調整する。It is a well-known fact that the beam current and the beam diameter are adjusted by adjusting the beam limiting aperture diameter and the lens focusing condition when observing the cross section 37 created by the above method by the scanning ion microscope function. In the present invention, the focused ion beam current and the beam diameter are adjusted to a size that can be used for cross-sectional observation by controlling the emission current from the liquid metal ion source as well as the beam limiting aperture diameter and the lens focusing condition.
【００１３】ビーム電流が数ｐＡの領域ではビーム径ｄ
はおよそ次の関係式（１）で表される。 ｄ2〜（Ｍ・ｄｇ）2＋（Ｃ・α・ΔE／E）2 （１） ここでＭは光学系の倍率、ｄｇは光源の大きさ、Ｃは光
学系の色収差係数、αはビーム開き半角、Eはイオンビ
ームエネルギー、ΔEはイオンビームエネルギー幅であ
る。光学系の色収差係数Ｃは集束レンズ系の改良により
低減できることは周知の事実である。In the region where the beam current is several pA, the beam diameter d
Is approximately represented by the following relational expression (1). d 2- (M · dg) 2 + (C · α · ΔE / E) 2 (1) where M is the magnification of the optical system, dg is the size of the light source, C is the chromatic aberration coefficient of the optical system, and α is the beam. The opening half angle, E is the ion beam energy, and ΔE is the ion beam energy width. It is a well-known fact that the chromatic aberration coefficient C of the optical system can be reduced by improving the focusing lens system.
【００１４】本発明では前記(1)式の第二項に着目し、
液体金属イオン源からのエミッション電流を制御するこ
とでΔEの値を可能な限り小さな値に抑え、ｄの値を小
さくする。図3に液体金属イオン源のエミッション電流
とイオンビームエネルギー半値幅の関係を示す。この図
から明らかなようにエミッション電流を増加させるとエ
ネルギー半値幅も増加する。通常、断面加工をする場合
は前記のように３０ｐＡ〜１０ｎＡのビーム電流を使用
するため、液体金属イオン源からのエミッション電流も
2〜3μA程度で使用する。これよりも低いエミッション
電流で使用すればΔEを小さく保つことができる。しか
しあまりにもエミッション電流の低い領域では、イオン
のエミッションが不安定になる。検討の結果断面観察の
場合はエミッション電流を1μA程度とすることで安定な
エミッションでΔEを小さく保つことができることがわ
かった。In the present invention, focusing on the second term of the above equation (1),
By controlling the emission current from the liquid metal ion source, the value of ΔE is kept as small as possible, and the value of d is made small. FIG. 3 shows the relationship between the emission current of the liquid metal ion source and the half width of the ion beam energy. As is apparent from this figure, when the emission current is increased, the half width of energy is also increased. Normally, when processing a cross section, the beam current of 30 pA to 10 nA is used as described above, so the emission current from the liquid metal ion source is also
Use at about 2-3μA. If used at a lower emission current, ΔE can be kept small. However, in a region where the emission current is too low, ion emission becomes unstable. As a result of investigation, it was found that ΔE can be kept small by stable emission by setting the emission current to about 1 μA in the cross-sectional observation.
【００１５】このとき試料表面での集束ビーム電流Iは
次式（２）により与えられる。 Ｉ= π・α2・ dI／dΩ （２） ここでdI／dΩ は液体金属イオン源のイオン放射角電
流密度である。制限絞り径により、αの値を制御できる
ことは図4から明らかである。ビーム制限絞り径の制御
は、例えば複数の異なった開口径を持つ開口を金属箔上
に開けたものを用意し、前記金属箔の位置を調整するこ
とでイオンビームを通過させる開口を選択する。制限絞
り径を小さくするとビーム電流が小さくなりすぎて、二
次荷電粒子の発生量が減少し、その結果ノイズ成分が増
加し良好な像質が得られない。検討を重ねた結果、制限
絞り径を４０μmとすることでビーム電流１ｐＡ、像分
解能１０ｎｍ（＝０．０１μm）、制限絞り径３０μmと
することでビーム電流0.3pA、像分解能７ｎｍ（＝０．
００７μm)を得るに至った。At this time, the focused beam current I on the sample surface is given by the following equation (2). I = π · α 2 · dI / dΩ (2) where dI / dΩ is the ion emission angular current density of the liquid metal ion source. It is clear from FIG. 4 that the value of α can be controlled by the limiting aperture diameter. The beam limiting aperture diameter is controlled, for example, by preparing an aperture having a plurality of different aperture diameters on a metal foil and adjusting the position of the metal foil to select an aperture through which the ion beam passes. If the diameter of the limiting aperture is reduced, the beam current becomes too small, and the amount of the secondary charged particles is reduced. As a result, the noise component increases and good image quality cannot be obtained. As a result of repeated studies, a beam current of 1 pA and an image resolution of 10 nm (= 0.01 μm) when the limiting aperture diameter is set to 40 μm, and a beam current of 0.3 pA and an image resolution of 7 nm (= 0.
007 μm).
【００１６】試料の表面を観察する場合は、イオンビー
ムを試料表面に対して垂直入射させる。この状態で１ｐ
Ａ以下のビーム電流を使用すると二次荷電粒子の発生量
が少なくノイズの多い画像しか得られない。しかし断面
観察においては、試料ステージを傾斜させ断面に対して
ある角度をもってイオンビームを入射させる。このた
め、垂直入射時よりも二次荷電粒子の発生量が増加し、
良好な画質の断面像が得られる。When observing the surface of a sample, an ion beam is vertically incident on the surface of the sample. 1p in this state
When a beam current of A or less is used, the amount of secondary charged particles generated is small, and only an image with much noise can be obtained. However, in cross-section observation, an ion beam is incident at a certain angle to the cross-section by tilting the sample stage. As a result, the amount of secondary charged particles generated is greater than at normal incidence,
A cross-sectional image with good image quality is obtained.
【００１７】[0017]
【発明の効果】本発明によれば 断面部を走査イオン顕
微鏡機能により観察する際、観察倍率を１００００倍以
上とした場合でも、集束イオンビーム照射による断面形
状のエッチングによる変形が低減される。また０．００
７μm〜０．０１μm程度の像分解能が得られ断面の微細
構造が鮮明に観察できるようになった。According to the present invention, when the cross section is observed by the scanning ion microscope function, even when the observation magnification is set to 10,000 times or more, deformation of the cross section by etching due to irradiation of the focused ion beam is reduced. 0.00
An image resolution of about 7 μm to 0.01 μm was obtained, and the fine structure of the cross section could be clearly observed.
【図１】図１は、本発明を実施するための装置構成例を
説明する概略断面図である。FIG. 1 is a schematic cross-sectional view illustrating an example of a device configuration for implementing the present invention.
【図２】図２は、ミクロ断面加工法のステップを説明す
る平面図および斜視図である。FIGS. 2A and 2B are a plan view and a perspective view illustrating steps of a micro-section processing method.
【図３】図３は、エミッション電流とエネルギー半値幅
を説明するグラフ図である。FIG. 3 is a graph illustrating an emission current and an energy half width.
【図４】図４は、ビーム制限絞りによるビーム開き半角
の制御を説明する側面図である。FIG. 4 is a side view illustrating control of a beam opening half angle by a beam limiting aperture.
１ 液体金属イオン源 ２ 集束レンズ ３ ブランキング電極 ４ 偏向電極 ５ 対物レンズ ６ 集束イオンビーム ７ 二次荷電粒子 ８ 二次荷電粒子検出器 ９ 試料 １０ 試料ステージ １１ Ａ／Ｄ変換器 １３ イオン光学系制御電源 １４ 表示装置 ３２ 配線 ３３ コンタクトホール ３４ 断面位置 ３５ コンタクトを含むＦＩＢ−ＣＶＤ法で膜付け領域 ３６ エッチング領域 ３７ 断面 DESCRIPTION OF SYMBOLS 1 Liquid metal ion source 2 Focusing lens 3 Blanking electrode 4 Deflection electrode 5 Objective lens 6 Focused ion beam 7 Secondary charged particle 8 Secondary charged particle detector 9 Sample 10 Sample stage 11 A / D converter 13 Ion optical system control Power supply 14 Display device 32 Wiring 33 Contact hole 34 Cross-sectional position 35 Film-forming region including FIB-CVD including contact 36 Etching region 37 Cross-section
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１０年６月９日[Submission date] June 9, 1998
【手続補正１】[Procedure amendment 1]
【補正対象書類名】図面[Document name to be amended] Drawing
【補正対象項目名】図３[Correction target item name] Figure 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図３】 FIG. 3
Claims (2)
き出されたイオンビームを集束するための集束レンズ系
と前記イオンビームを試料上でオン／オフするためのブ
ランキング電極とからなる集束イオンビーム発生部と、 前記集束イオンビームを制限するための制限絞りと、 前記集束イオンビームを偏向走査するための偏向電極
と、 前記集束イオンビームが照射される試料を載置し移動可
能な試料ステージと、 前記集束イオンビームを照射することにより発生する二
次荷電粒子を検出する二次荷電粒子検出器と前記二次荷
電粒子検出器の信号に基づいて前記試料表面の画像を表
示するためのディスプレイとからなる集束イオンビーム
装置を用いて試料の所望の箇所に前記集束イオンビーム
を照射し、スパッタエッチングすることにより断面を加
工する第一の工程と、 少なくとも液体金属イオン源からのエミッション電流を
制御して、前記集束イオンビームの電流とビーム径を変
更した後、前記断面に前記集束イオンビームを走査しな
がら照射し、前記断面から発生した二次荷電粒子を前記
二次荷電粒子検出器で検出し、前記二次荷電粒子検出器
の信号に基づいて前記試料表面の画像をディスプレイに
表示し、前記断面の観察を行う第二の工程からなること
を特徴とする集束イオンビームによる断面加工観察方
法。1. A focused ion beam comprising a liquid metal ion source, a focusing lens system for focusing an ion beam extracted from the ion source, and a blanking electrode for turning on / off the ion beam on a sample. A generator, a restricting aperture for restricting the focused ion beam, a deflection electrode for deflecting and scanning the focused ion beam, and a movable sample stage on which a sample irradiated with the focused ion beam is placed and movable. A display for displaying an image of the sample surface based on a signal of the secondary charged particle detector and the secondary charged particle detector that detects secondary charged particles generated by irradiating the focused ion beam, The focused ion beam is irradiated to a desired portion of the sample using a focused ion beam device composed of A first step of processing, at least controlling the emission current from the liquid metal ion source, after changing the current and beam diameter of the focused ion beam, irradiating the cross section with the focused ion beam while scanning Detecting secondary charged particles generated from the cross section by the secondary charged particle detector, displaying an image of the sample surface on a display based on a signal of the secondary charged particle detector, and observing the cross section. A sectional processing observation method using a focused ion beam, comprising a second step to be performed.
金属イオン源からのエミッション電流を制御して、前記
集束イオンビームの電流を１ｐＡ以下とする請求項１記
載の集束イオンビームによる断面加工観察方法。2. The cross-section processing observation using a focused ion beam according to claim 1, wherein the second step controls at least an emission current from a liquid metal ion source to reduce the current of the focused ion beam to 1 pA or less. Method.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108310A JPH11307417A (en) | 1998-04-17 | 1998-04-17 | Method for observing cross-section machined by focused ion beam |
| TW088106147A TW386178B (en) | 1998-04-17 | 1999-04-16 | Cross section formation observing method by a focused ion beam |
| KR1019990013700A KR19990083288A (en) | 1998-04-17 | 1999-04-17 | Cross section formation observing method by a focused ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108310A JPH11307417A (en) | 1998-04-17 | 1998-04-17 | Method for observing cross-section machined by focused ion beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11307417A true JPH11307417A (en) | 1999-11-05 |
Family
ID=14481477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10108310A Pending JPH11307417A (en) | 1998-04-17 | 1998-04-17 | Method for observing cross-section machined by focused ion beam |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH11307417A (en) |
| KR (1) | KR19990083288A (en) |
| TW (1) | TW386178B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6685847B2 (en) * | 2000-01-14 | 2004-02-03 | Seiko Instruments Inc. | Method for observing cross-sectional structure of sample |
| KR101463245B1 (en) * | 2006-08-21 | 2014-11-18 | 가부시키가이샤 히타치 하이테크 사이언스 | Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583768B1 (en) * | 2004-07-07 | 2006-05-26 | 한국과학기술원 | An apparatus of focusing particle beam by radiation pressure |
| TWI447385B (en) * | 2011-09-16 | 2014-08-01 | Inotera Memories Inc | Efficiency and smart method to prepare the planner view slice and view |
| KR102398917B1 (en) * | 2017-10-10 | 2022-05-17 | 에이에스엠엘 네델란즈 비.브이. | Low-dose charged particle measurement system |
-
1998
- 1998-04-17 JP JP10108310A patent/JPH11307417A/en active Pending
-
1999
- 1999-04-16 TW TW088106147A patent/TW386178B/en not_active IP Right Cessation
- 1999-04-17 KR KR1019990013700A patent/KR19990083288A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6685847B2 (en) * | 2000-01-14 | 2004-02-03 | Seiko Instruments Inc. | Method for observing cross-sectional structure of sample |
| KR101463245B1 (en) * | 2006-08-21 | 2014-11-18 | 가부시키가이샤 히타치 하이테크 사이언스 | Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990083288A (en) | 1999-11-25 |
| TW386178B (en) | 2000-04-01 |
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