JPH11307305A - Resistance material and resistance paste and resistor using the resistance material and ceramic multilayer substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide resistance paste which is baked in a neutral or reducing atmosphere for forming a resistor enabling the absolute value of temperature coefficient of resistance(TCR) to approach 0 by shifting the TCR in a region (10 Ω/square-100 Ω/square), where the area resistance value is shifted low from a positive direction to a negative direction. SOLUTION: This resistance paste for forming a resistor 17 contains conductive materials expressed by Nbx La1-x B6-4x (x=0.1 to 0.9), or conductive materials made of NbB2 of 100-90 mol.% and LaB6 of 0-10 mol.%, and addition agent contains titanium oxide (TiO2 ) of 1-10 pts.wt., cobalt oxide (at least one of Co3 O4 and CoO) of 1-15 pts.wt., and zinc oxide(ZnO) of 1-5 pts.wt. for a totaling amount of 100 ptc.wt. of the conductive materials and non-reducing glass frits.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistive material, a resistive paste and a resistive element using the same, and a ceramic multilayer substrate, and more particularly to a resistive material capable of being baked in a neutral or reducing atmosphere. The present invention relates to a paste, a resistive material advantageously contained in the resistive paste, a resistor formed using the resistive paste, and a ceramic multilayer substrate including the resistor.

[0002]

2. Description of the Related Art Alumina ceramic substrates include:
Usually, a circuit pattern including electrodes, resistors, and the like is formed so that various electronic components can be mounted. Also, to form an electrode or electrode pattern,
It is common practice to screen-print a noble metal paste such as silver or a silver-palladium alloy and bake it in air.

Further, studies have been made to increase the density by stacking the substrates and arranging the conductors three-dimensionally inside, thereby further miniaturizing the product. However, using a conventional general alumina substrate,
When the inner wiring and lamination are to be performed, since the sintering temperature of alumina is high, a high melting point metal such as tungsten or molybdenum must be used as a conductor material, but the specific resistance of these metals is high. Therefore, there is a problem that the use is restricted and it is not practical.

Therefore, in order to solve such a problem, sintering can be performed at a low temperature (1000 ° C. or less).
Low-temperature sintering substrates (for example, a composite substrate made of ceramic and glass) that can use a metal such as silver, palladium, or copper as an inner layer material have been used.

As the electrode material used in such a low-temperature sintering substrate, the above-mentioned noble metal paste is considered. However, the noble metal paste is not only expensive but also has a disadvantage that it has a high impedance and is liable to cause electromigration.

On the other hand, a base metal paste having a low impedance and containing a base metal material such as copper which does not cause electromigration is screen-printed on a sintered substrate or a green sheet, and this is printed in a neutral or reducing atmosphere. It is known that high-quality electrode patterns can be formed at low cost by firing, and attention has been paid.

In this case, the resistor paste for forming a resistor or a resistor pattern provided on the substrate so as to connect the plurality of base metal electrodes after baking the base metal paste is made of a RuO ₂ -based material as a conductive material. It cannot be used because it will be reduced if used. The resistance material is preferably a material that can be baked in a neutral or reducing atmosphere such as nitrogen.

Therefore, as a resistive paste which can be baked in a neutral or reducing atmosphere as described above, LaB described in Japanese Patent Publication No. 55-30889 is disclosed.
Resistance paste containing ₆ series conductive material,
No. 224301, a resistive paste containing an NbB ₂ -based conductive material, and a resistive paste described in JP-A-2-249203, containing a Nb _x La _1-x B _6-4x conductive material of a solid solution type And so on.

In particular, Nb _x La _{1 -x} B is used as a conductive material.
_The resistor formed using the _6-4x- based resistor paste has a higher mixing ratio of the conductive material and the glass frit than the resistor formed using the resistor paste including the LaB _6- based conductive material. Has the advantage that the range of the sheet resistance value at which good reproducibility can be obtained is wide.

[0010]

However, in particular, N
In a resistor formed using a resistor paste containing a b _x La _1-x B _6-4x- based conductive material, a resistance temperature coefficient (hereinafter, referred to as a resistance in a region where the area resistance is low (about 10Ω / □ to 100Ω / □)) , “TCR”) in the plus (+) direction, and the absolute value tends to move away from zero.
In JP-A 7-192903 discloses, TiO ₂ as a first additive, addition of Co ₃ O _4, CoO and Fe ₂ O ₃ as a second additive, TC on alumina substrate
Although it is shown that R can be shifted in the negative direction, when a resistor is formed on a low-temperature sintering substrate such as a composite substrate of ceramic and glass, the TCR control effect and reproduction especially in the low-resistance region are reproduced. In fact, the properties were not sufficient, and the required TCR characteristics could not be sufficiently obtained.

The same applies to a resistor formed using a resistor paste containing a conductive material such as NbB ₂ .

Therefore, an object of the present invention is to provide Nb _x La
_{Even if} a resistor paste containing a conductive material such as _1-x B _6-4x or NbB ₂ is baked on a low-temperature sintering substrate, the TCR of a region having a low sheet resistance in a resistor formed by the method is negative. The purpose of the present invention is to solve the above-mentioned problem by making it possible to shift in the direction to approach zero.

More specifically, an object of the present invention is to form a resistive paste, a resistive material advantageously contained in the resistive paste, and a resistive paste which can solve the above-mentioned problems. It is an object to provide a resistor and a ceramic multilayer substrate provided with the resistor.

[0014]

SUMMARY OF THE INVENTION In order to solve the above technical problems, the present invention is first directed to a resistance material which is advantageously contained in a resistance paste.

[0015] The resistance material according to the present invention generally comprises
Contains conductive materials and additives
Formula: Nb_xLa_1-xB_6-4x(X = 0.1 to 0.9)
Conductive material or 100-90 mol% NbB_Two
And 0-10 mol% LaB ₆Including conductive material consisting of
Titanium oxide (TiO 2)_Two), Oxidized
Baltic (Co_ThreeO_FourAnd at least one of CoO),
And zinc oxide (ZnO)
I have.

In a more specific aspect, the resistance material according to the present invention has a general formula: Nb _x La _1-x B _6-4x (x = 0.1
~ 0.9), a non-reducing glass frit and an additive, and as an additive, titanium oxide (100 parts by weight in total of the conductive material and the non-reducing glass frit) TiO ₂ ), 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO), and 1 to 5 parts by weight of zinc oxide (ZnO). And

In another more specific aspect of the resistive material according to the invention, 100 to 90 mol% of NbB ₂ and 0 to 90 mol%
It contains a conductive material composed of 10 mol% LaB ₆ , a non-reducing glass frit, and an additive. As an additive, titanium oxide (TiO 2) is used with respect to 100 parts by weight of the total of the conductive material and the non-reducing glass frit. ₂ ) 1 to 10 parts by weight,
1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO) and 1 of zinc oxide (ZnO)
-5 parts by weight, respectively.

In the two more specific aspects described above, the mixing ratio of the conductive material / non-reducing glass frit is
It is preferably in the range of 70 to 10 parts by weight / 30 to 90 parts by weight.

The present invention is also directed to a resistance paste obtained by adding an organic vehicle to the above-described resistance material and kneading the same.

The resistance paste has a BaO content of 15-75.
Wt%, SiO ₂ is 25 to 80 wt%, Al ₂ O ₃ is 3
0 wt% or less, B ₂ O ₃ is 1.5 to 5 wt%, CaO is 1.5 to 5 wt%, preferably for each, to form the resistor in the low-temperature sintering substrate having a composition containing Used.

The present invention is also directed to a resistor formed by applying and baking the above-mentioned resistor paste.

The present invention is further directed to a ceramic multilayer substrate provided with the above-described resistor.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a resistor paste according to a preferred embodiment of the present invention, the general formula: Nb _x La _{1 -xB
6-4x} (x = 0.1 to 0.9), containing a conductive material, a non-reducing glass frit, and an additive, and as an additive, a total amount of the conductive material and the non-reducing glass frit 1
1 to 1 part by weight of titanium oxide (TiO ₂ ) to 00 parts by weight
0 parts by weight, 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (Z
Such resistive materials, each containing 1 to 5 parts by weight of nO), are added.

Further, in a resistor paste according to another preferred embodiment of the present invention, 100 to 90 mol% of NbB ₂
And a conductive material composed of 0 to 10 mol% of LaB ₆ , a non-reducing glass frit, and an additive, and the total amount of the conductive material and the non-reducing glass frit is 1 as an additive.
1 to 1 part by weight of titanium oxide (TiO ₂ ) to 00 parts by weight
0 parts by weight, 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (Z
Such resistive materials, each containing 1 to 5 parts by weight of nO), are added.

Each of the above-mentioned resistance materials is added with an organic vehicle and kneaded to form a resistance paste. The resistor paste is applied and baked to form a resistor.

The above-mentioned conductive material, Nb _x La _{1 -x} B
Particle size such as _6-4x or NbB ₂ is preferably in the range of 0.1 to 5 [mu] m, the range of 0.1~3μm is more preferable.

As the non-reducing glass frit, Ba,
Borosilicate glass or boroaluminosilicate glass of Ca or another alkaline earth metal is selected. The particle diameter of the non-reducing glass frit is preferably in the range of 1 to 10 μm, more preferably in the range of 1 to 5 μm.

In each of the above-described resistance materials, titanium oxide (TiO ₂ ) as an additive is added in an amount of 1 to 1 with respect to 100 parts by weight of the total of the conductive material and the non-reducing glass frit.
0 parts by weight, 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (Z
The reason why nO) was added in an amount of 1 to 5 parts by weight, respectively, was that when the amount was less than each range, the resistance value of the resistor and the TCR of the resistor obtained from the resistor paste containing the resistor material were reduced. If the control effect is insufficient, and if the addition amount exceeds each range, not only the resistance value may increase, but also the TCR may greatly deviate from 0,
This is because reproducibility may deteriorate.

In each of the above embodiments relating to the resistance material, preferably, the mixing ratio of the conductive material / non-reducing glass frit is selected so as to be in the range of 70 to 10 parts by weight / 30 to 90 parts by weight. It is. As a result, it becomes possible to obtain a resistive paste with excellent adhesion to the substrate and without flowing out of the glass component.
More specifically, when the ratio of the non-reducing glass frit falls below the above range, the resistance paste obtained by applying the resistive paste containing the resistive material to the substrate and baking the resistive paste decreases. On the other hand, if it exceeds the above range, in the baking process, the glass component in the resistance paste may flow out, thereby deteriorating the solderability of the electrodes arranged adjacently and the resistance value It may change suddenly or have poor reproducibility, making it unsuitable for practical use.

In the resistance paste according to the present invention, as described above, an organic vehicle is added to a mixture (solid component) of a conductive material and a non-reducing glass frit, and the mixture is kneaded to obtain a necessary printing. Although properties are imparted, examples of the organic vehicle include terpene such as α-terpineol, kerosene, butyl carbitol, carbitol, and ethyl cellulose resin or acrylic resin used in a thick film material paste. Various substances such as those dissolved in a high boiling point solvent such as tall acetate can be used, and if necessary, an additive for imparting thixotropy can be added.

As described above, 1 to 10 parts by weight of titanium oxide (TiO ₂ ) is added to 100 parts by weight of the total of 70 to 10 parts by weight of the conductive material and 30 to 90 parts by weight of the non-reducing glass frit. , Cobalt oxide (Co ₃ O ₄ and Co
1 to 15 parts by weight of zinc oxide (ZnO) and 1 to 5 parts by weight of zinc oxide (ZnO), respectively, and a resistance paste obtained by adding and kneading an organic vehicle to a resistance material is used. This makes it possible to reliably form a resistor having a TCR closer to 0 even when applied and baked on a low-temperature sintered substrate.

Further, according to the resistance paste according to the present invention, not only the TCR on the alumina substrate but also the conventional control effect was insufficient, for example, when the BaO was 15 to 75%.
Wt%, SiO ₂ is 25 to 80 wt%, Al ₂ O ₃ is 3
0 wt% or less, B ₂ O ₃ is 1.5 to 5 wt%, CaO is 1.5 to 5 wt%, respectively, applied to the low-temperature sintering substrate having a composition containing, even when baked, TCR Is 0
Can be formed.

The resistor formed by applying and baking the resistor paste according to the present invention has good adhesion to the substrate and is practically usable even when formed on a low-temperature sintered substrate. Possible area resistance value is wide and TC
It has the characteristic that R is good.

FIG. 1 is a sectional view schematically showing a ceramic multilayer substrate 1 according to an embodiment of the present invention.

The ceramic multilayer substrate 1 has a plurality of ceramic layers 2. In manufacturing the ceramic multilayer substrate 1, a ceramic laminate obtained by laminating a plurality of green sheets containing a predetermined ceramic composition is fired. Resulted from firing the sheet.

Surface conductors 3, 4, 5 and 6 are formed on the outer surface of the multilayer ceramic substrate 1, and internal conductors 7 and 8 are also formed inside the ceramic multilayer substrate 1 along interfaces between specific ceramic layers 2. , 9, 10 and 11 are formed, and via-hole conductors 12, 13, 14, 15 and 16 are formed so as to penetrate the specific ceramic layer 2.
A resistor 17 is formed on the outer surface of the ceramic multilayer substrate 1 so as to connect between the surface conductors 3 and 4.

The above-mentioned surface conductors 3 to 6 and internal conductors 7 to 11
In addition, the via-hole conductors 12 to 16 are formed by previously applying a metal paste for forming these to the above-described ceramic laminate and firing the same simultaneously with the ceramic laminate. In this case, preferably, a base metal paste is used as the metal paste, and a neutral or reducing atmosphere is applied during firing.

The resistor 17 is formed by applying the above-described resistor paste according to the present invention so as to connect the surface conductors 3 and 4 after firing, and baking in a neutral or reducing atmosphere. It is formed.

The ceramic multilayer substrate 1 shown in FIG.
It should be pointed out that the structure of the present invention, more specifically, the electrical element and the electrical connection mode, etc. are merely examples of the ceramic multilayer substrate to which the present invention can be applied.

[0040]

EXAMPLE First, a substrate on which electrodes were formed was manufactured in the following manner.

BaO, SiO_Two, Al_TwoO_Three, CaO,
And B_TwoO_ThreeAre prepared, and these are
Mix at a ratio of 30: 60: 5: 2: 3, pulverize and mix.
After combining, calcined at a temperature of 850 to 950 ° C,
Crushed. Then add an organic binder to the obtained powder
And a 128 μm-thick sheet
Molded. Next, the sheet cut into a predetermined size is
Print the copper paste on the sheet, dry it,
The base material was obtained by molding. Next, the substrate is charged with nitrogen.
Nitrogen containing a small amount of oxygen and hydrogen as the rear gas
Steam atmosphere (N _TwoIs 99.7 to 99.8%), 85
Under the condition of 0 to 1000 ° C, calcining and book
Baking was performed to obtain a substrate on which a copper electrode was formed.

On the other hand, Nb _x La
After preparing a conductive material having a composition of _1-x B _6-4x (x = 0.1 to 0.9) and a non-reducing glass frit, a required additive and an organic vehicle are added thereto to form a resistance paste. Produced.

First, powdered NbB ₂ and LaB ₆ , which are starting materials of the conductive material, were prepared, and these were Nb _x La.
After weighing and mixing so as to have a composition of _1-x B _6-4x (x = 0.1 to 0.9), the mixture was placed in a crucible and the peak temperature was 10
By firing in a nitrogen (N ₂ ) atmosphere set at 00 ° C. for 2 hours or more, a composite in which LaB ₆ was dissolved in NbB ₂ in solid solution was produced. The heating rate at this time was set to 3 ° C. per minute. And
Using a vibration mill, the obtained synthesized product was found to have an average particle size of 0.1.
By crushing and drying to 5 μm,
To obtain a conductive material having a composition of _{Nb x La 1-x B 6-} 4x (x = 0.1~0.9).

After weighing and mixing so that NbB ₂ has a composition of 100 to 90 mol% and LaB ₆ has a composition of 0 to 10 mol%, the average particle diameter is 0.5 μm using a vibration mill.
Then, the mixture was crushed and dried to obtain a mixed conductive material.

Further, apart from the conductive material, B ₂ O ₃ , SiO ₂ , Ba, which are starting materials of the non-reducing glass frit,
O, CaO, Nb ₂ O ₅ , and K ₂ O were prepared, respectively, and each of them was 35.56: 31.24: 17.7.
After mixing at a molar ratio of 8: 10.04: 2.41: 2.97, the resulting mixture was melted at a temperature of 1300 ° C. to 1400 ° C. to produce a molten glass.
Further, the molten glass was quenched in pure water, and then ground using a vibration mill until the average particle diameter became 2 μm, thereby obtaining a non-reducing glass frit.

Further, TiO_TwoWith the first additive, Co_ThreeO
_FourAnd CoO as a second additive, ZnO
Are prepared as a third additive, and these are added using a vibration mill.
And pulverized to an average particle size of 2 μm.
As you can see, Nb_xLa_1-xB _6-4xSystem and other conductive materials
Add to the mixture with the reducing glass frit
Upon addition, a mixture was obtained. Note that the parameters in Table 1
The parameter x is Nb_xLa_1-xB_6-4xSystem conductive material
Composition ratio in the mixture, NbB_Two+ LaB₆
= X + (1-x).

[0047]

[Table 1]

With respect to the mixture obtained as described above,
After adding an organic vehicle in which an acrylic resin was dissolved in α-terpineol, kneading was performed to obtain a resistance paste.

Each of the obtained resistive pastes was placed between electrodes on a low-temperature sintered substrate on which copper electrodes had been previously formed, with a length of 1.0 mm,
After screen printing with a width of 1.0 mm and a dry film thickness of 20 μm, it was dried at a temperature of 150 ° C. for 10 minutes. Thereafter, in a tunnel furnace in an N ₂ atmosphere, baking was performed at a peak temperature of 900 ° C. for 10 minutes, thereby obtaining a sample in which a resistor was formed.

Next, for each of the obtained samples, the sheet resistance (1.0 × 1.0 mm □) and TCR (Cold / T
CR: 25 to -55 ° C, Hot / TCR: 25 to 15
(Between 0 ° C.). Table 2 shows the results.

[0051]

[Table 2]

In Table 2 and Table 1 above, *
The samples marked with are comparative examples outside the preferred range of the present invention, and all other examples are examples within the preferred range of the present invention. Samples 1 to 22 are:
In the case of the conductive material of the Nb _x La _1-x B _6-4x solid solution system, the samples 23 to 32 are each samples in the case of the NbB ₂ + LaB ₆ mixed system.

FIG. 2 shows the relationship between the sheet resistance and the TCR of each sample shown in Table 2. TCR is Co
The larger of the absolute values of ld / Hot is plotted. In FIG. 2, .largecircle. Corresponds to a sample in which no additive is added in a solid solution system or a mixed system, and .DELTA. Corresponds to other samples outside the preferred range in the present invention.
Corresponds to a sample within a preferred range in the present invention.

As shown in Tables 1 and 2, and FIG. 2, titanium oxide (TiO ₂ ), cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (ZnO)
Respectively, in the sample according to the example in which the additive was added within a preferable range in the present invention, the TCR was shifted downward compared to the sample in which no additive was added as a comparative example, and the same level was obtained. Even when compared with the resistance value of
CR is approaching ± 0 ppm / ° C.

As described above, the samples within the preferred range of the present invention fall within ± 150 ppm / ° C.
The TCR can be adjusted by changing the amount of addition. On the other hand, in a sample outside the preferred range in the present invention, deterioration of the TCR and an increase in the resistance value are observed, and in addition, deterioration of the reproducibility and the variation of the resistance value or the TCR is also observed.

From these results, regarding the amount of additive,
1 to 10 parts by weight of titanium oxide (TiO ₂ ) and 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO) based on 100 parts by weight of the total amount of the conductive material and the non-reducing glass frit Part, and zinc oxide (ZnO)
Is particularly preferably 1 to 5 parts by weight.

In this embodiment, regarding the composition ratio of the conductive material, x = 0.5, 0.2
5, 0.75, and for mixed systems, x = 0.9
5, but the composition ratio is not limited to these, and the composition defined in the claims alone may be used,
Alternatively, they can be used in combination.

The components and composition ratios of the non-reducing glass frit are not limited to those used in the examples, and non-reducing glass frit having various other materials or composition ratios is used. You can also.

The substrate on which the resistor is formed is not limited to the low-temperature sintering substrate shown in the embodiment, but may be formed when the resistor is formed on a substrate made of other various materials. The present invention can be applied.

The present invention is not limited to the embodiments in other respects as well, and can be applied to various materials, compositions, baking conditions, atmosphere conditions, etc. without departing from the spirit of the present invention. , Can be modified.

[0061]

As described above, according to the resistive material according to the present invention, the resistive paste and the resistive element using the resistive material, and the ceramic multilayer substrate provided with the resistive substance, the resistive material comprises the conductive material and the additive. And a general formula: Nb _x La _1-x B _6-4x (x = 0.1-0.
Containing a conductive material made of a conductive material or 100 to 90 mol% of NbB ₂ and 0 mol% of LaB _6, represented by 9), as additives, titanium oxide (Ti
O ₂ ), cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (ZnO). A resistance paste which can be shifted in a positive direction to a negative direction in a low value region (around 10Ω / □ to 100Ω / □) to make the absolute value of TCR close to 0, and which is baked in a neutral or reducing atmosphere This makes it possible to make an adjustment that sufficiently satisfies the TCR required for practical use.

In the present invention, the additive amount of the above-mentioned additive with respect to 100 parts by weight of the total amount of the conductive material and the non-reducing glass frit is such that titanium oxide (TiO ₂ ) is 1 to
When 10 parts by weight, cobalt oxide (at least one of Co ₃ O ₄ and CoO) is selected to be 1 to 15 parts by weight, and zinc oxide (ZnO) is 1 to 5 parts by weight, the above-mentioned effects are more improved. Achieved reliably.

In the present invention, the mixing ratio of the conductive material / non-reducing glass frit is 70 to 10 parts by weight /
When it is selected so as to be in the range of 30 to 90 parts by weight, it becomes possible to obtain a resistance paste having excellent adhesion to the substrate and free of the outflow of glass components.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically showing a ceramic multilayer substrate 1 according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a relationship between a sheet resistance value and a TCR in Examples and Comparative Examples according to the present invention.

[Explanation of symbols]

 1 ceramic multilayer substrate 17 resistor

Claims (8)

[Claims] A conductive material and an additive, wherein the conductive material has a general formula: Nb _x La _1-x B _6-4x (x = 0.
1 to 0.9), or 100 to 90
containing mol% of NbB ₂ and 0 mol% of the conductive material consisting of LaB _6, as the additive, titanium oxide (TiO _2), cobalt oxide (Co ₃ O ₄ and CoO
), And zinc oxide (ZnO). 2. A general formula: Nb _x La _1-x B _6-4x (x =
0.1 to 0.9), a non-reducing glass frit, and an additive, wherein the additive has a total amount of 1 of the conductive material and the non-reducing glass frit.
1 to 1 part by weight of titanium oxide (TiO ₂ ) to 00 parts by weight
0 parts by weight, 1 to 15 parts by weight of cobalt oxide (at least one of Co ₃ O ₄ and CoO), and zinc oxide (Z
nO) in an amount of 1 to 5 parts by weight, respectively. 3. 100 to 90 mol% of NbB ₂ and 0
Containing a to 10 mol% conductive material consisting of LaB ₆ of the non-reducing glass frit and the additive, as the additive,
1 part by weight of titanium oxide (TiO ₂ ) based on 100 parts by weight of the total amount of the conductive material and the non-reducing glass frit.
To 10 parts by weight of cobalt oxide (Co ₃ O ₄ and CoO
(1) to 15 parts by weight of zinc oxide (ZnO) and 1 to 5 parts by weight of zinc oxide (ZnO). 4. The resistor according to claim 2, wherein a mixing ratio of the conductive material / the non-reducing glass frit is in a range of 70 to 10 parts by weight / 30 to 90 parts by weight. material. 5. A resistive paste obtained by adding an organic vehicle to the resistive material according to claim 2 and kneading the mixture. 6. BaO is 15 to 75 wt%, SiO ₂ is 25 to 80 wt%, Al ₂ O ₃ is 30 wt% or less, B ₂
O ₃ 1.5 to 5% by weight, CaO 1.5 to 5% by weight,
The resistive paste according to claim 5, wherein each of the resistive pastes is used to form a resistor on a low-temperature sintered substrate having a contained composition. 7. A resistor formed by applying and baking the resistor paste according to claim 5 or 6. 8. A ceramic multilayer substrate comprising the resistor according to claim 7.