JPH11302879A - Plasma treating device and cleaning method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treating device capable of efficiently separating and removing attachments adhered to the upper cover body of a treating vessel in a closed state in a plasma treating device. SOLUTION: This plasma treating device 200 composed of a treating vessel 4 composed of a vacuum chamber, an electrode part 26 disposed in the treating vessel 4 and a plasma generating means 6 disposed outside the treating vessel 4 and generating plasma in the treating vessel 4 for executing plasma treatment to a work W disposed on the electrode part 26 in the treating vessel 4 is moreover provided with an auxiliary plasma generating means 6' for cleaning deposits deposited on a window part 10 being the upper cover body passing energy from the plasma generating means 6 disposed on a part of the treating vessel 4 outside the treating vessel 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus and a cleaning method of the plasma processing apparatus, and more particularly, to a plasma generated in a processing vessel after performing a plasma processing, particularly from a plasma generating means. The present invention relates to a plasma processing apparatus capable of effectively decomposing and removing deposits deposited on an inner surface of a window through which generated energy passes, and a cleaning method of the plasma processing apparatus.

[0002]

2. Description of the Related Art Conventionally, for example, processing such as plasma etching has been generally performed on a semiconductor wafer, and various types of plasma processing apparatuses have been developed for this purpose. ing. For example, two flat electrodes are arranged in a processing container in parallel, plasma is generated by applying a high-frequency voltage for plasma generation between the electrodes, and the plasma is used to process an object to be processed such as a wafer. 2. Description of the Related Art A plasma processing apparatus that etches a surface or performs a deposition process is known.

[0003] Since the plasma generated between the parallel plate electrodes generates an alternating electric field, electrons are attracted along the electric field and collide with gas molecules to generate active species.
Etching is performed when the active species collides with the wafer surface. However, in such a conventional method, since the plasma formed between the electrodes is a coupling circuit based on capacitance, an electric field is generated between the electrodes, but a magnetic field is not easily generated. I had no choice.

[0004] Therefore, there is a problem that the directivity at the time of etching is deteriorated, and that by-products generated by etching are not sufficiently discharged. Also, JP-A-7-
In the publication No. 201495, as shown in FIG. 7 (A), a spiral coil 6 is arranged on the upper surface of an upper lid 10 made of a dielectric material of a processing container 4, and a high-frequency voltage power supply is connected to the coil 6. 8 through a suitable matching circuit 62 to apply a dielectric coupling and a capacitive coupling between an inductance component of the coil 6 and an electrode provided in the processing container 4, that is, a susceptor 26. Then, a plasma processing apparatus that generates low-pressure plasma in the processing container 4 to etch the surface of an object to be processed such as the wafer W or perform a vapor deposition process is shown.

However, in such a plasma processing apparatus, as shown in FIG. 7B, the upper lid 10 faces the inside of the processing vessel 4 due to the influence of the magnetic field generated from the coil 6. Deposits accumulate on the surface of the upper lid 10 facing the inside of the processing container 4 corresponding to the gap 8 of the coil 6 on the surface. That is, the surface of the upper lid 10 facing the inside of the processing container 4 corresponding to the portion where the coil 6 is in direct contact with the upper lid 10, and the upper portion corresponding to the gap 28 of the coil 6. The deposits tend to selectively adhere to the surface of the lid 10 facing the inside of the processing container 4.

This phenomenon is caused, for example, by the effect of the plasma on the surface of the upper lid 10 facing the inside of the processing vessel 4 in contact with the coil 6, the deposits are deposited. And the case where the deposits are sputtered alternately occur, so that the deposits are less likely to deposit, but the gap 28 of the coil 6 is
In this case, since there is little chance that the deposit is sputtered, the deposit 7 is more likely to be deposited on such a portion.

[0007] In any of the conventional examples, if the adhered substance adhered to the inner surface of the processing container is peeled off for some reason, the quality of the component to be processed is deteriorated and a defect is generated. Therefore, the yield also decreases efficiently, and the production cost increases. Therefore, the deposits in the processing container 4 can be efficiently removed as early as possible. There has been a demand for separation and removal from the inside of the processing container 4.

In particular, as the size of the semiconductor device has been reduced to a minimum, the above problem has become more serious, and there is an urgent need for a solution to the problem.

[0009]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the above-mentioned drawbacks of the prior art, and to provide a dielectric material opposed to the plasma generating means of the closed processing vessel in the plasma processing apparatus. The present invention provides a plasma processing apparatus and a cleaning method for the plasma processing apparatus, which are capable of efficiently separating and removing the deposits adhering to the upper lid composed of the above.

[0010]

In order to achieve the above-mentioned object, the present invention employs the following basic technical structure. That is, as a first aspect according to the present invention, there is provided a processing container formed of a vacuum chamber, an electrode portion provided in the processing, a plasma provided outside the processing container, and generating plasma in the processing container. A processing unit configured to perform plasma processing on an object to be processed provided on an electrode unit in the processing container, provided outside the processing container and provided in a part of the processing container. A plasma processing apparatus further provided with an auxiliary plasma generating means for cleaning deposits deposited on a window through which energy from the plasma generating means is passed, and a second aspect according to the present invention. as,
Basically, the configuration is the same as that of the first embodiment, but the plasma generation means is means for generating plasma using surface waves using microwaves, and The generating means is a plasma processing apparatus including a movable electrode provided between the plasma generating means and the window.

Further, according to a third aspect of the present invention, there is provided:
Basically, the configuration is the same as that in the first embodiment, and the plasma generating means is means for generating plasma using surface waves using microwaves, and The means is a plasma processing apparatus including a movable microwave dispersion plate provided between the plasma generating means and the window.

In a fourth aspect of the present invention, there is provided a processing container constituted by a vacuum chamber, an electrode portion provided in the processing, and a plasma provided in the processing container outside the processing container. A plasma generating means for generating plasma, wherein the processing apparatus performs plasma processing on an object to be processed provided on an electrode portion in the processing vessel. During the operation stop period of the plasma generating means, the auxiliary plasma generating means is operated to accumulate in the window through which the energy from the plasma generating means provided in a part of the processing container passes. The fifth aspect is a cleaning method for a plasma processing apparatus configured to peel off and remove attached substances. The plasma generating means is configured by a coil-shaped member that generates plasma using inductive coupling by a high-frequency voltage, and the plasma generating means and the auxiliary plasma generating means are configured to perform the plasma processing at the time of performing the plasma processing. This is a cleaning method for a plasma processing apparatus configured to connect the plasma generating means to the high-frequency voltage power supply and to connect the auxiliary plasma generating means to the high-frequency voltage power supply at the time of performing the cleaning process.

A sixth aspect of the present invention is basically the same as the fourth and fifth aspects described above.
The plasma generating means is means for generating plasma using surface waves using microwaves, and the auxiliary plasma generating means is connected to a high-frequency voltage power supply, and the plasma generating means and the window are connected to each other. It is constituted by a movable electrode provided between the auxiliary plasma generating means, while the plasma generating means is operating, retracted to a position not covering the window,
This is a cleaning method for a plasma processing apparatus configured to move to a position covering the window during a cleaning process in which the plasma generation unit does not operate.

Further, a seventh aspect according to the present invention has substantially the same configuration as that of the sixth aspect, but the auxiliary plasma generating means is connected to a high-frequency voltage power supply, and The movable microwave dispersion plate provided between the means and the window portion is used, and the opening of the microwave dispersion plate constituting the auxiliary plasma generation means, during the cleaning process, This is a cleaning method for a plasma processing apparatus configured to move along the window.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In other words, in the present invention, a dry cleaning coil, an electrode and the like are arranged on a dielectric window of a plasma processing apparatus in addition to a plasma source for a process, so that a dry cleaning is performed. , Applying high frequency power to these coils, electrodes, etc. to generate plasma,
By capacitively coupling with plasma generated by another plasma source, deposits on the dielectric window are removed by a sputtering effect.

The positions of the dry cleaning coil and the electrode are as follows: a place on the dielectric window where no deposit is sputtered during the process (for example, an intermediate point between the coils, (when inductively coupled plasma is used)); It is characterized by being arranged on the entire surface (when using surface wave plasma).

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The construction of a specific example of a plasma processing apparatus and a cleaning method of the plasma processing apparatus according to the present invention will be described below in detail with reference to the drawings. That is, FIG. 1 is a schematic diagram showing the configuration of a specific example of the plasma processing apparatus 200 according to the present invention. In FIG. 1, a processing container 4 formed of a vacuum chamber and provided in the processing 4 are shown. And a plasma generating means 6 provided outside the processing container 4 and generating plasma in the processing container 4. The processing target provided on the electrode unit 26 in the processing container 4 is provided. A processing apparatus 200 for performing a plasma processing on an object W, wherein the plasma generating means 6 provided outside a part of the processing container 4 and provided in a part of the processing container 4
Window 10 that is the upper lid that allows energy from
There is disclosed a plasma processing apparatus 200 further provided with an auxiliary plasma generating means 6 'for cleaning the deposit 7 deposited on the substrate.

The basic technical idea of the present invention is that the adhered substance 7 adhering to a specific position of the window 10 is removed by intensive etching. It is. Further, the plasma processing apparatus according to the present invention is desirably one of a CVD process and an etching process.

Further, in the present invention, it is desirable that the plasma generating means 6 is means for generating plasma using inductive coupling by a high-frequency voltage. It is desirable to be constituted by a coil-shaped member. The plasma generating means 6 according to the present invention may be the coil-shaped member, or may be means for generating plasma using surface waves using microwaves.

The auxiliary plasma generating means 6 'is desirably formed of a coil-shaped member for generating plasma using inductive coupling by a high-frequency voltage. Further, in the present invention, the plasma generating means 6 and the auxiliary plasma generating means 6 'switch the connection with the high frequency voltage power supply at the time of performing the plasma processing and at the time of performing the cleaning processing. It is desirable to be connected to the high frequency voltage power supply via the switch means.

The coil members forming the plasma generating means 6 and the coil members forming the auxiliary plasma generating means 6 'used in the present invention preferably have, for example, a plane spiral shape. . As a more specific example of the plasma processing apparatus 200 according to the present invention, the plasma generating means 6 and the auxiliary plasma generating means 6 'are spiral coil members having substantially the same shape. The shape is not necessarily limited to the shape as shown in FIG. 1B in which the radius is continuously and uniformly increased from the center to the outside, and an arbitrary shape may be used. It is possible to do.

The shape of the coil can be designed so that uniform plasma is generated in the processing container 4. Further, as a specific example of the present invention, at the time of performing the plasma processing and the time of performing the cleaning processing, the processing container 4 and the respective plasma generating means 6 and the auxiliary plasma generating means 6 ' Are required to be configured to be different from each other. Therefore, the plasma generating means 6 and the auxiliary plasma generating means 6 ′ are configured such that the set positions thereof are changed. Things are desirable.

For example, as shown in FIG. 2, when a predetermined process, for example, a CVD process is performed in the plasma processing apparatus 200, the process coil 6 which is the plasma generating means 6 is used. Then, the positioning is set so as to contact the upper surface of the upper lid 10 of the processing container 4, and the auxiliary plasma generating means 6 ′ is retracted upward at a predetermined interval with respect to the plasma generating means 6. It is set to take a state.

At the time of the cleaning process, FIG.
As shown in (2), the positioning setting is performed so that the auxiliary plasma generating means 6 ′ comes into contact with the upper surface of the upper lid 10 of the processing container 4, while the plasma generating means 6
The auxiliary plasma generating means 6 'is set so as to be retracted upward at a predetermined interval. In the present invention, the positional relationship between the plasma generating means 6 and the auxiliary plasma generating means 6 ′ is such that, for example, during plasma discharge, an induced current is generated in the other unused coil.
It must be separated from each other by a sufficient distance to prevent the impedance of each coil from increasing.

In other words, it is necessary to make each coil movable so as to separate the coils so that the interaction between the coils is negligible and perform the plasma discharge. The mechanism for realizing such a configuration is not particularly limited. For example, the support members 50 and 51 that individually support the plasma generation unit 6 and the auxiliary plasma generation unit 6 ′ are driven by using an appropriate up-down mechanism. It is possible to do.

Further, the plasma generating means 6 and the auxiliary plasma generating means 6 'are provided with optional connection changeover switch means 5.
It is desirable to be configured to be alternately connected to an arbitrary high-frequency voltage power supply 8 via the power supply 3. It is preferable that the coil member forming the plasma generating means 6 and the coil member forming the auxiliary plasma generating means 6 'be configured to be vertically movable through a gap between the coil members facing each other.

Here, a more specific example of the plasma processing apparatus 200 according to the present invention will be described with reference to FIGS.
FIG. 3 shows a specific example in which two inductive coupling coils 6 and 6 ′ are arranged in a plasma processing apparatus having a planar inductive coupling coil. That is, in addition to the process coil 6, a dry cleaning coil 6 'is provided.

By performing plasma discharge using different coils for the etching process and the dry cleaning, respectively, a dielectric window, that is, a dielectric material constituting the upper lid 10 has a function of transmitting a magnetic field or an electric field. The adhesion of the etching product 7 to a member constituting a part of the processing container 4 is prevented. The shape of the dry cleaning coil 6 ′ can be formed so as to fit between the coils of the process coil 6 and increase the capacitive coupling with the plasma.

The supply of the high-frequency power to each coil is performed by sharing the high-frequency voltage power supply 8 and the matching box 62 and switching the changeover switch circuit 52 so that each of the plasma generating means 6 or the auxiliary plasma generating means 6 ′ is provided. The high frequency voltage is individually supplied to the power supply. Then, the inside of the processing container 4 is evacuated using an appropriate vacuum pump means 70, a gas containing a predetermined vapor deposition component is introduced into the processing container 4, and the processing target mounted on the electrode 26 is processed. When performing a process of depositing a predetermined component on the object W, as shown in FIG. 2, the plasma generating means 6 is moved to the upper lid 10 using an appropriate up-down mechanism (not shown).
At the same time, the plasma generating means 6 is connected to the high-frequency voltage power supply 8 through the switch means 52.

As a result, by inductive coupling and capacitive coupling,
At the same time that a plasma state is generated in the processing container 4 and a predetermined vapor deposition component is deposited on the processing object W,
The deposit 7 is deposited on the surface of the upper lid 10 facing the inside of the processing vessel 4 corresponding to the coil gap 28 of the plasma generating means 6. Thereafter, at the time when the predetermined plasma processing on the object W is completed, the object W is discharged from the inside of the processing container 4 and, at the same time, the CVD process is performed.
The processing gas used in the process is also discharged, and instead, for example, as a gas for etching, for example, a CF-based or NF-based gas is introduced into the processing container 4, and then the processing container 4
At the same time, the inside is again evacuated, and at the same time, as shown in FIG. 3, the plasma generating means 6 is retracted upward, and instead, the auxiliary plasma generating means 6 'is lowered to contact the outer surface of the upper lid 10. Further, the plasma generating means 6 ′ is connected to the high frequency voltage power supply 8 via the switch means 52.

With this configuration, the deposit 7 deposited on the surface of the upper lid 10 facing the inside of the processing container 4 is separated and decomposed by sputtering hardening.
It can be removed from the inner surface of the upper lid 10. As is apparent from the above description, in the present invention, the upper lid 10 constituting the window of the processing container 4 is provided.
It is possible to intensively perform an etching process to remove the attached matter adhering to a specific position in the above.

Also, in the present invention, both coils can be fixed by incorporating additional measures such as incorporating a resonance circuit for suppressing the generation of induced current and reducing the impedance by changing the coil shape. Needless to say. In addition, if the same shape (uniformity and density) of plasma can be generated in the process coil 6 and the dry cleaning coil 6 ′ by changing the coil shape, the use of different coils during the etching process will increase the dielectric constant. The adhesion of the etching product on the body window 10 is prevented, and the dry cleaning is not required.

The structure of another embodiment according to the present invention will be described below with reference to FIGS. As another specific example according to the present invention, for example, the basic configuration is substantially the same as that of the above-described plasma processing apparatus 200, but the plasma generation unit 6 is provided with a surface wave generated by using a microwave. The auxiliary plasma generating means 6 ′ includes a movable electrode 56 provided between the plasma generating means 6 and the window, that is, the upper lid 10. It is a plasma processing apparatus configured to be used.

That is, as shown in FIG. 4, the plasma generating means 6 in this embodiment includes, for example, a waveguide 58 connected to a microwave oscillator 57 and a waveguide 58 connected thereto.
And a dielectric plate 59 connected to the substrate. Then, the microwave generated by the microwave oscillator 57 reaches the dielectric plate 59 via the waveguide 58, a surface wave is output from the surface of the dielectric plate 59, and the surface wave is The plasma is generated inside the processing container 4 by being transmitted to the inside via the upper lid 10.

In this specific example, the auxiliary plasma generating means 6 'is retracted to the window, that is, a position which does not cover the upper lid 10, while the plasma generating means 6 is operating. In addition, it is preferable that the auxiliary plasma generating means 6 ′ be configured to be able to move to a position covering the window 10 during a so-called cleaning process in which the plasma generating means 6 does not operate.

Further, in this embodiment, it is desirable that the auxiliary plasma generating means 6 ′ constitute the electrode 56. That is, it is desirable that the auxiliary plasma generating means 6 ′ in this specific example is connected to an appropriate high-frequency voltage power supply 8. Further, the auxiliary plasma generating means 6 '
Is configured to be movable along an upper lid 10 constituting an upper surface of the processing container 4, and any of its moving mechanism, moving form, and moving range can be appropriately determined. not exist.

That is, in the present embodiment, as shown in FIG. 4, a second embodiment having a movable electrode 56 in a surface wave plasma processing apparatus 200 which does not use a microwave dispersion plate described later is used. It is shown. The movable electrode 56 is arranged between the upper lid 10 which is a dielectric window and the microwave dielectric plate 59. During the etching process, the electrode 59, which is the auxiliary plasma generating means 6 ', exists at a location other than the dielectric window 10 so as not to prevent the surface wave from entering the chamber 4, and performs plasma discharge by the surface wave.

At the time of dry cleaning, the electrode 59 moves onto the dielectric window 10 to perform capacitive coupling discharge. In this embodiment, the electrode 59 can be used because the distance between the plasma source 6 and the lower electrode 26 is short and capacitive coupling discharge is possible. When the distance between the plasma source and the lower electrode 26 is long, it is necessary to perform remote plasma discharge, and thus it is necessary to change the electrode to a coil or the like as in the above specific example.

In such a case, as in the first embodiment, it is necessary to further take a measure for removing extraneous matter adhering between the coils. FIGS. 5 and 6 show still another embodiment according to the present invention.
This will be described with reference to FIG. As yet another specific example according to the present invention, for example, the basic configuration is substantially the same as that of the above-described plasma processing apparatus 200, but the plasma generating means 6 is provided with a surface generated by using a microwave. Means for generating plasma using waves, and the auxiliary plasma generating means 6 ', the plasma generating means 6 and the window 10
Movable microwave dispersion plate 6 provided between
0.

The auxiliary plasma generating means 6 ′ is configured to be movable along an upper lid 10 constituting the upper surface of the processing vessel 4, and its moving mechanism, moving form,
Any of the moving ranges can be determined as appropriate, and there is no specific dimension. In this specific example, the auxiliary plasma generating means 6 'is connected to a high-frequency voltage power supply 8, and the opening 61 of the microwave dispersion plate constituting the auxiliary plasma generating means 6' During the cleaning process, it is desirable to be configured to be movable along the window 10.

That is, in the surface wave plasma processing apparatus 200 of this embodiment, the high frequency power supply 8 is attached to the movable microwave dispersion plate 60 and used as an electrode. Furthermore,
In the present invention, by using the microwave dispersion plate 60 as an electrode material, it becomes possible to have both functions of the dispersion plate 60 and the electrode. Plasma source 6 and lower electrode 2
In the surface-wave plasma processing apparatus 200 having a long distance between 6, the attached matter 7 is removed by applying power to the microwave dispersion plate 60 while maintaining plasma discharge by surface waves during dry cleaning.

Since the deposit 7 cannot be removed on the dielectric window 10 at the opening where the surface wave is incident, the dispersion plate is moved to remove the deposit at the opening. The moving direction of the dispersion plate depends on the shape and area of the opening, and it is necessary to determine the moving direction according to the shape of the dispersion plate. Hereinafter, specific examples of the cleaning method of the plasma processing apparatus according to the present invention will be described.

The cleaning method of the plasma processing apparatus according to the present invention is, as apparent from the description of each of the above-described embodiments, for example, a processing container formed of a vacuum chamber,
An object to be processed, comprising: an electrode portion provided in the processing; a plasma generating means provided outside the processing container to generate plasma in the processing container; and an electrode provided in the processing container. In a processing apparatus that performs plasma processing on the processing vessel, an auxiliary plasma generating unit is further provided outside the processing container, and the auxiliary plasma generating unit is operated during a period in which the operation of the plasma generating unit is stopped. This is a cleaning method for a plasma processing apparatus configured to peel off and remove deposits deposited on a window through which energy from the plasma generation means provided in a part of the processing container passes.

In the cleaning method of the plasma processing apparatus according to the present invention, the adhered substance adhering to a specific position of the window is peeled and removed intensively using an etching effect. Things are desirable. Further, in the cleaning method of the plasma processing apparatus according to the present invention,
The plasma processing is preferably a CVD processing.

Further, in the method for cleaning a plasma processing apparatus according to the present invention, it is preferable that the plasma generating means 6 is means for generating plasma using inductive coupling by high-frequency voltage. On the other hand, in the method for cleaning a plasma processing apparatus according to the present invention, the plasma generating means 6 and the auxiliary plasma generating means 6 'are coil-shaped members for generating plasma using inductive coupling by high-frequency voltage. The plasma generating means 6 and the auxiliary plasma generating means 6 'connect the plasma generating means to the high-frequency voltage power supply 8 at the time of performing the plasma processing, and execute the cleaning processing. At this point, it is preferable to connect the auxiliary plasma generating means to the high frequency voltage power supply.

As understood from the above description, in the plasma processing apparatus cleaning method according to the present invention, the plasma generating means 6 and the auxiliary plasma generating means 6 'execute the plasma processing. It is desirable to change the set position so that the distance to the processing container 4 is different from the time when the cleaning process is performed and when the cleaning process is performed.

In another embodiment of the present invention,
The plasma generating means 6 may be means for generating plasma using surface waves using microwaves,
The auxiliary plasma generating means 6 ′ is connected to the high-frequency voltage power supply 8 and comprises a movable electrode 56 provided between the plasma generating means 6 and the window 10. The means 6 ′ is evacuated to a position where the window 10 is not covered while the plasma generating means 6 is operating, and the window 10 is not operated while the plasma generating means 6 is not operating. It is desirable to perform the plasma processing so as to move to a position where the coating 10 is coated.

Further, as still another specific example of the cleaning method of the plasma processing apparatus according to the present invention, the auxiliary plasma generating means 6 ′ is connected to a high-frequency voltage power supply 8. And the window 10
Movable microwave dispersion plate 6 provided between
0 is used. In such a specific example, the opening 61 of the microwave dispersion plate constituting the auxiliary plasma generating means 6 ′ is connected to the window 1 during the cleaning process.
It is desirable to be configured to move along zero.

[0049]

The plasma processing apparatus and the cleaning method of the plasma processing apparatus according to the present invention employ the above-mentioned technical configuration, and therefore, the plasma processing apparatus includes a coil, an electrode, and the like disposed on a dielectric window when plasma is generated. By applying high-frequency power, capacitive coupling occurs between the plasma, the coil, and the electrode, and the dielectric window is sputtered by ions.
The deposits 7 on the dielectric window can be removed selectively and intensively, but efficiently.

[Brief description of the drawings]

FIG. 1A is a perspective view schematically showing the configuration of a specific example of a plasma processing apparatus according to the present invention.
(B) is a plan view showing an example of a coil shape of the plasma generating means and the auxiliary plasma generating means used in this specific example.

FIG. 2 is a cross-sectional view showing an example of an operation state according to one embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating an example of an operation state according to one embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a second specific example of the plasma processing apparatus according to the present invention.

FIG. 5 is a sectional view showing a third example of the plasma processing apparatus according to the present invention.

FIG. 6 is a plan view showing an example of a configuration of an auxiliary plasma generating means 6 used in a third specific example in the plasma processing apparatus according to the present invention.

FIG. 7A is a view schematically showing a configuration of a conventional plasma processing apparatus, and FIG. 7B is a view showing a state of deposition of deposits in the conventional plasma processing apparatus. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 4 ... Processing container 6 ... Plasma generating means 6 '... Auxiliary plasma generating means 7 ... Deposit 8 ... High frequency voltage power supply 10 ... Upper lid, dielectric window 28 ... Coil gap 50, 51 ... Vertical movement mechanism 52 ... Switch means 56 ... electrodes 57 ... microwave oscillator 58 ... waveguide 59 ... dielectric plate 60 ... microwave dispersion plate 61 ... opening 62 ... matching circuit 70 ... vacuum pump 200 ... plasma processing apparatus

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] July 16, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010]

In order to achieve the above-mentioned object, the present invention employs the following basic technical structure. That is, as a first aspect according to the present invention, there is provided a processing container formed of a vacuum chamber, an electrode portion provided in the processing, a plasma provided outside the processing container, and generating plasma in the processing container. A processing unit configured to perform plasma processing on an object to be processed provided on an electrode unit in the processing container, provided outside the processing container and provided in a part of the processing container. A plasma processing apparatus further provided with an auxiliary plasma generating means comprising a coil-shaped member for cleaning the deposits deposited on the window portion through which energy from the plasma generating means is passed. Pertain
As a second aspect, a process constituted by a vacuum chamber
Container, electrode part provided in the process, outside the process container
To generate plasma in the processing vessel
And plasma generating means,
Plasma processing is performed on the object to be processed provided on the pole part.
In the processing equipment to be performed,
An auxiliary plasma generating means comprising a
During the operation stoppage of the plasma generating means, the coil-shaped member
The auxiliary plasma generating means consisting of
From the plasma generation means provided in a part of the container
Deposits that accumulate in the windows that allow the energy of
Cleave of plasma processing equipment configured to remove and remove
It is a leaning method.
The plasma generating means and the auxiliary plasma generating means are high frequency
A command to generate plasma using inductive coupling by voltage
And a plasma generating means.
The auxiliary plasma generating means comprising the coil-shaped member is
At the time of performing the plasma processing, the plasma generation
Means is connected to the high frequency
At the time of execution, the auxiliary plasma generation means is turned on.
A plug configured to be connected to the high-frequency voltage power supply
This is a cleaning method of the suma treatment apparatus.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction contents]

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The construction of a specific example of a plasma processing apparatus and a cleaning method of the plasma processing apparatus according to the present invention will be described below in detail with reference to the drawings. That is, FIG. 1 is a schematic diagram showing the configuration of a specific example of the plasma processing apparatus 200 according to the present invention. In FIG. 1, a processing container 4 formed of a vacuum chamber and provided in the processing 4 are shown. And a plasma generating means 6 provided outside the processing container 4 and generating plasma in the processing container 4. The processing target provided on the electrode unit 26 in the processing container 4 is provided. A processing apparatus 200 for performing a plasma processing on an object W, wherein the plasma generating means 6 provided outside a part of the processing container 4 and provided in a part of the processing container 4
Window 10 that is the upper lid that allows energy from
Coil for cleaning the deposit 7 deposited on the surface
A plasma processing apparatus 200 further provided with an auxiliary plasma generating means 6 ' made of a material is disclosed.

[Procedure amendment 4]

[Document name to be amended] Drawing

[Correction target item name] Figure 2

[Correction method] Change

[Correction contents]

FIG. 2

[Procedure amendment 5]

[Document name to be amended] Drawing

[Correction target item name] Figure 3

[Correction method] Change

[Correction contents]

FIG. 3

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H05H 1/46 H05H 1/46 B H01L 21/302 N

Claims (27)

[Claims] 1. A processing container comprising a vacuum chamber,
An object to be processed, comprising: an electrode portion provided in the processing; a plasma generating means provided outside the processing container to generate plasma in the processing container; and an electrode provided in the processing container. A cleaning apparatus for performing plasma processing on the processing container, wherein the cleaning device removes deposits that accumulate in a window through which energy from the plasma generation means provided in a part of the processing container passes. A plasma processing apparatus, further comprising an auxiliary plasma generating means for performing plasma processing. 2. The plasma processing apparatus according to claim 1, wherein said deposits adhering to a specific position of said window portion are intensively etched and removed. . 3. The plasma processing apparatus according to claim 1, wherein the plasma processing is a CVD processing. 4. The plasma processing apparatus according to claim 1, wherein said plasma generating means is means for generating plasma using inductive coupling by a high-frequency voltage. 5. The plasma processing apparatus according to claim 4, wherein said plasma generating means is constituted by a coil-shaped member. 6. The plasma processing apparatus according to claim 1, wherein said plasma generation means is means for generating plasma using surface waves using microwaves. 7. The plasma processing apparatus according to claim 4, wherein the auxiliary plasma generating means is configured by a coil-shaped member that generates plasma using inductive coupling by a high-frequency voltage. 8. The plasma generating means and the auxiliary plasma generating means are connected to the high frequency voltage power supply via a switch means for switching the connection to the high frequency voltage power supply at the time of performing the plasma processing and the time of performing the cleaning processing. The plasma processing apparatus according to claim 7, wherein the plasma processing apparatus is connected to a voltage power supply. 9. The set position of the plasma generating means and the auxiliary plasma generating means is set such that the distance between the plasma processing means and the processing vessel at the time of performing the plasma processing and the time of performing the cleaning processing are different from each other. 8. The plasma processing apparatus according to claim 7, wherein the plasma processing apparatus is configured to change. 10. The coil member forming the plasma generating means and the coil member forming the auxiliary plasma generating means have a planar spiral shape. 3. The plasma processing apparatus according to 1. 11. A coil member forming the plasma generating means and a coil member forming the auxiliary plasma generating means are configured to be vertically movable through a gap between the coil members facing each other. The plasma processing apparatus according to any one of claims 7 to 10, wherein 12. The plasma processing apparatus according to claim 6, wherein said auxiliary plasma generating means comprises a movable electrode provided between said plasma generating means and said window. . 13. The auxiliary plasma generating means is retracted to a position where it does not cover the window while the plasma generating means is operating, and during the cleaning process when the plasma generating means is not operating. 13. The plasma processing apparatus according to claim 12, wherein the apparatus is configured to be movable to a position covering the window. 14. The plasma processing apparatus according to claim 12, wherein said auxiliary plasma generating means is connected to a high-frequency voltage power supply. 15. The apparatus according to claim 6, wherein said auxiliary plasma generating means is constituted by a movable microwave dispersion plate provided between said plasma generating means and said window. Plasma processing equipment. 16. The plasma processing apparatus according to claim 15, wherein said auxiliary plasma generating means is connected to a high-frequency voltage power supply. 17. An apparatus according to claim 15, wherein an opening of the microwave dispersion plate constituting said auxiliary plasma generating means is movable along said window during a cleaning process. 17. The plasma processing apparatus according to item 16. 18. A processing container comprising a vacuum chamber, an electrode portion provided in the processing, and plasma generating means provided outside the processing container and generating plasma in the processing container. In a processing apparatus for performing plasma processing on an object to be processed provided on an electrode portion in a processing chamber, an auxiliary plasma generating means is further provided outside the processing chamber, and an operation stop period of the plasma generating means is stopped. During the operation of the auxiliary plasma generating means,
A cleaning method for a plasma processing apparatus, comprising: removing an adhering substance deposited on a window through which energy from the plasma generating means provided in a part of the processing container passes. 19. The cleaning method for a plasma processing apparatus according to claim 18, wherein the adhered substance adhering to a specific position of the window is intensively peeled off by using an etching effect. 20. The cleaning method for a plasma processing apparatus according to claim 18, wherein the plasma processing is a CVD processing. 21. The plasma processing apparatus according to claim 1, wherein said plasma generating means is means for generating plasma using inductive coupling using a high-frequency voltage. 22. The plasma generating means and the auxiliary plasma generating means are constituted by coil-shaped members for generating plasma using inductive coupling by a high-frequency voltage. Is characterized in that the plasma generating means is connected to the high-frequency voltage power supply at the time of performing the plasma processing, and the auxiliary plasma generating means is connected to the high-frequency voltage power supply at the time of performing the cleaning processing. A method for cleaning a plasma processing apparatus according to claim 18. 23. The plasma generating means and the auxiliary plasma generating means, when performing the plasma processing and when performing the cleaning processing, set their set positions so that the distance to the processing container is different from each other. 23. The cleaning method for a plasma processing apparatus according to claim 22, wherein the method is changed. 24. The cleaning method for a plasma processing apparatus according to claim 18, wherein said plasma generating means is means for generating plasma using surface waves using microwaves. 25. The auxiliary plasma generating means, which is connected to a high-frequency voltage power supply and comprises a movable electrode provided between the plasma generating means and the window. Is retracted to a position not covering the window while the plasma generating means is operating, and is moved to a position covering the window during the cleaning process when the plasma generating means is not operating. 25. The cleaning method of a plasma processing apparatus according to claim 24, wherein the cleaning is performed. 26. The auxiliary plasma generating means is connected to a high-frequency voltage power supply, and uses a movable microwave dispersion plate provided between the plasma generating means and the window. The cleaning method for a plasma processing apparatus according to claim 18, wherein 27. The apparatus according to claim 26, wherein the opening of the microwave dispersion plate constituting the auxiliary plasma generating means is configured to move along the window during the cleaning process. A cleaning method for the plasma processing apparatus according to the above.