JPH11297763A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect the connection defect of a bump due to the forming process of the solder bump, prior to the mounting of a chip on a mounting substrate and to easily determine the quality of the junction characteristic with high sensitivity. SOLUTION: In a device chip 21, a solder bump 20, whose constitution material is set to 97% Pb (lead)-3% Sn (tin) alloy, is formed on an Al (aluminum) electrode pad 12 as the outer connection terminal of large-scale integrated circuit(LSI) formed on the surface of a semiconductor substrate 11, via a BLM film 16 of the three-layer structure of a Cr-(chromium) film/Cu(copper) film/Au(gold) film. A scissors-type physical measurement probe 31 is fixed to the solder ball bump 20 and is made to raise in the direction of an arrow in a drawing. Consequently, the solder ball bump 20 is pulled upwards and breaks from the vicinity of the BLM film 16 at a base. The quality of the junction characteristic of the ball bump 20 is determined based on the tensile destruction strength of the ball bump 20 and the state of a bump breaking face.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a semiconductor device having an inspection step of judging the bonding characteristics of solder bumps in a device chip mounted on a mounting substrate via solder bumps. And a method for producing the same.

[0002]

2. Description of the Related Art In order to further reduce the size of electronic equipment, it is important to improve the component mounting density. For semiconductor ICs (integrated circuits),
Wireless bonding has been proposed in which a bare chip of an LSI (Large Scale Integrated Circuit) is directly connected to a conductor pattern on a mounting substrate instead of the conventional package mounting using a bonding wire and a lead frame. In particular, all the electrode parts and solder ball bumps and beam leads connected to them are formed as mounting terminals on the element forming surface side of the device chip, and the mounting terminals and the printed wiring board are placed with the element forming surface facing down. A method of directly connecting the upper conductor pattern is called a flip-chip bonding method, and is widely used for mounting a hybrid IC and for use in a large computer because the assembly process can be streamlined.

[0003] Among them, solder ball bumps are expected to occupy an increasingly important position as mounting terminals for BGA (ball grid array) packages, which are promising future packages with a large number of pins. Where BGA
An arrangement pattern of Al (aluminum) electrode pads usually concentrated on the periphery of a device chip is a regular arrangement of electrical contacts distributed more widely through an insulating intermediate layer (interposer). This is a technique of converting into a pattern and arranging solder ball bumps on the electrical contacts.

According to this BGA, a large arrangement pitch between adjacent solder ball bumps can be ensured, so that there is no danger of short-circuiting between the solder ball bumps, and therefore the ball diameter can be sufficiently reduced without reducing the ball diameter. A device chip can be flip-chip mounted on a printed wiring board with high bonding strength. In recent years, as many as 200 or more solder ball bumps may be formed on a single package, and how many such solder ball bumps can be formed at a uniform height determines the reliability of mounting. Conventionally, the formation of solder ball bumps has generally been performed by electrolytic plating. However, this method has a problem that the thickness of the deposited solder fluctuates depending on the surface condition of the underlying material layer and slight variations in electric resistance. Was.

In order to solve this problem, the present applicant has combined the technique of forming a vacuum thin film with the technique of lifting off a resist pattern to improve the adhesion between an Al-based electrode pad and a bump of a semiconductor IC. A method of forming a solder ball bump using a barrier metal film for the purpose of preventing mutual diffusion and the like has been proposed (see JP-A-7-288255). Since the barrier metal film affects the finished shape of the bump, the barrier metal film is usually made of BLM (Ball Lim
It is called an itting metal film.

Hereinafter, a method of manufacturing a solder ball bump using the BLM film will be described with reference to FIGS. First, for example, an LSI formed on the surface of the semiconductor substrate 11
For example, an Al electrode pad 12 is formed as an external connection terminal at a joint (not shown). Subsequently, for example, a passivation film (surface protection film) 15 in which a silicon nitride film 13 and a polyimide film 14 are laminated in this order is coated on the entire surface of the substrate, and then the Al electrode pad 12 is formed through a connection hole opened in the passivation film 15. Is formed to connect to the BLM film 16. The structure of the BLM film 16 is as follows.
The most common structure is a three-layer structure of a Cr (chromium) film / Cu (copper) film / Au (gold) film. In this three-layer structure, the lower Cr film serves as an adhesion layer for ensuring good adhesion to the Al electrode pad 12, and the middle Cu film serves as a diffusion of solder from a solder ball bump formed later. The upper Au film mainly acts as a barrier layer for preventing oxidization, and acts mainly as an oxidation preventing film for preventing oxidation of the intermediate Cu film (see FIG. 14).

Next, after a sufficiently thick photoresist film 17 is applied to the entire surface of the substrate, the photoresist film 17 is patterned using a photolithography technique.
Thus, an opening 18 for exposing the BLM film 16 and the passivation film 15 around the BLM film 16 is formed (see FIG. 15).

Next, a solder vapor deposition film 19 made of Pb (lead) and Sn (tin) is formed on the entire surface of the substrate by using, for example, a vapor deposition technique. At this time, the solder deposition film 19
Due to the large step at the end of the photoresist film 17 in the opening 18, the BLM film 16 in the opening 18 and the solder vapor deposition film 19 on the passivation film 15 and the solder vapor deposition film 19 on the photoresist film 17 are separated. (See FIG. 16).

Next, by using a lift-off technique, the wafer is dipped in a resist stripping solution and subjected to a heating swinging process to remove the photoresist film 17 and the solder deposition film 19 on the photoresist film 17. Thus, B
Only the solder deposited film 19 covering the LM film 16 and the passivation film 15 around the LM film 16 is left (see FIG. 17).

Next, a heating and melting treatment called a so-called wet back is performed. That is, after the flux is applied to the surface of the solder deposited film 19, if the temperature is increased stepwise in an N ₂ (nitrogen) atmosphere, the solder deposited film 19 contracts due to its own surface tension, and the solder deposited film 19 The solder ball bumps 20 are consistently formed. Thus, on the Al electrode pad 12 as the external connection terminal of the LSI formed on the surface of the semiconductor substrate 11, via the BLM film 16,
The solder ball bumps 20 are formed (see FIG. 18).

Next, the semiconductor substrate 11 on which the solder ball bumps 20 are formed is diced and divided into individual device chips 21.
With the solder ball bump forming surface facing downward, and facing the printed wiring board 22. At this time, the printed wiring board 22 has a Cu land 24 forming a wiring pattern formed on, for example, a glass epoxy substrate 23, and a eutectic solder film 25 is preliminarily mounted on the Cu land 24.
The surface other than the Cu land 24 is covered with a solder resist film 26. Then, the Cu land 2 on which the eutectic solder film 25 of the printed wiring board 22 is preliminarily attached.
After aligning the solder ball bumps 20 of the device chip 21 with the solder ball bumps 20, the two are heated and welded. Thus, the printed wiring board 2 of the device chip 21
2 is completed (see FIG. 19).

[0012]

Before the device chip 21 is flip-chip mounted on the printed wiring board 22 via the solder ball bumps 20, the electrical characteristics of the solder ball bump joint of the device chip 21 must be checked. An electrical test (commonly known as a pellet check) for diagnosis is performed. This electrical inspection may be performed before or after dicing of the semiconductor substrate 11. In any case, the electrical inspection probe of the inspection device is conventionally provided on the top of the finished solder ball bump 20. Were contacted, and a contact resistance measurement and an operation test were performed.

However, even if the device chip 21 passes such an electrical test, the printed circuit board 22 on which the device chip 21 has been flip-chip mounted is combined with another component to assemble it into a final product and then shipped. In the stage of performing the pre-inspection, there may be a case where a bonding failure of the solder ball bump 20 is detected for the first time.

A cause of such a bonding failure of the solder ball bumps 20 is a residue of the polyimide film 14 or the photoresist film 17 slightly remaining on the surface of the BLM film 16.
The lowering of the bonding strength between the LM film 16 and the solder ball bumps 20 and the slight amount of impurities contained in the BLM film 16 and the solder film 19 change the diffusion coefficient of metal atoms between these two films, thereby reducing the BLM. Cu-S plays an important role in the electrical connection between the film 16 and the solder ball bump 20
It is conceivable that the bonding between the BLM film 16 and the solder ball bump 20 does not maintain a predetermined strength due to an extremely delicate change in the process of forming the solder ball bump 20, such as the insufficient formation of the n alloy layer. . Then, such an unusual phenomenon becomes apparent as a bonding failure of the solder ball bumps 20 during repeated severe temperature cycles such as a pre-shipment inspection of the final product.

As described above, when a defective bonding of the solder ball bumps 20 is detected at the stage when the product is assembled, the time difference until this information is fed back to the process of forming the solder ball bumps 20 becomes large. During this time lag, defective device chips continue to be produced, which may cause a large number of defective products. Therefore, prior to the step of flip-chip mounting the device chip 21 on the printed wiring board 22, apart from the inspection of the electrical characteristics of the solder ball bumps 20 by the conventional electrical measurement probe, the bonding failure of the solder ball bumps 20 can be detected with high sensitivity. There is a keen need to establish a means by which decisions can be made.

Accordingly, the present invention has been made in view of such circumstances, and prior to mounting a chip on a mounting board, a bonding defect of a solder bump caused by a solder bump forming process is detected, and the bonding characteristics of the solder bump are detected. It is an object of the present invention to provide a method of manufacturing a semiconductor device, which can easily determine the quality of a semiconductor device with high sensitivity.

[0017]

SUMMARY OF THE INVENTION The present inventor has developed a solder bump, which is caused by a defect in a solder bump forming process, in a product determined to be defective in a pre-shipment inspection performed using a severe temperature cycle. Of the solder bumps, and the fact that the bonding failure of the solder bumps is well reflected in the tensile strength when pulling the solder bumps upward and the state of the fracture surface of the solder bumps was found.

That is, using a good sample having good bonding characteristics of solder bumps and a defective sample having poor bonding characteristics of solder bumps, an experiment was conducted in which the solder bumps of the device chip were pulled upward by a probe and broken. However, in the case of a non-defective sample, the fracture of the solder bump is in a ductile fracture mode, and when observing the fracture state, a sufficient solder residual film remains on the device chip side, and almost no exposure of the base of the solder bump is observed. Not possible or very few. In addition, the probe load at the breaking limit of the solder bump, that is, the tensile strength exceeded a certain reference value. On the other hand, in the case of a defective sample, the fracture of the solder bump is in a brittle fracture mode, and when the fracture state is observed, almost no residual solder film remains on the device chip side, or an irregular island shape is observed. Only a small amount of the residual solder film remained, and the exposed area of the base of the solder bump was large. Further, the tensile strength at the breaking limit of the solder bump did not reach the reference value at the time of ductile breaking.

Therefore, the present inventor has repeated studies based on such experimental results, and has conceived the following method of manufacturing a semiconductor device according to the present invention as a means for solving the above-mentioned problems. That is,
A method of manufacturing a semiconductor device according to claim 1 includes a step of forming a solder bump on an electrode pad portion of a device chip, and pulling up the solder bump in a direction substantially perpendicular to a main surface of the device chip. And a solder bump breaking step of breaking the solder bumps, and an inspection step of judging the bonding characteristics of the solder bumps based on a probe load at a breaking limit of the solder bumps.

In the method of manufacturing a semiconductor device according to the first aspect of the present invention, the solder bump of the device chip is pulled upward to break the solder bump, and the solder bump is broken using the tensile strength of the solder bump at that time as an index. An inspection is performed to determine the quality of the bonding characteristics. That is, if the tensile strength exceeds the reference value set in advance by an experiment using a good sample and a defective sample, it is determined that the bonding characteristics of the solder bumps are good. It is determined that the bonding characteristics of the solder bumps are poor. For this reason, an abnormality in the solder bump formation process, for example, an organic matter residue at the interface between the solder bump and its underlying film suddenly causes a defective joint strength, and this abnormality cannot be detected by the conventional electrical characteristic inspection. Even in this case, a bonding defect of the solder bump caused by the solder bump forming process is detected, and the quality of the bonding characteristic is determined simply and with high sensitivity.

Therefore, the inspection process for judging the bonding characteristics of the solder bumps is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board, thereby strictly selecting good products. Since only the formed bump forming chip is mounted on the mounting substrate and assembled as a product device, the reliability and durability of the final product device are greatly improved as compared with those obtained by the conventional manufacturing process. Further, even when a bonding defect of the solder bump is detected, the time until the information is fed back to the process of forming the solder bump is also shorter than before, so that the generation of a large number of defective products during that time is suppressed. .

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a solder bump on an electrode pad of a device chip; and forming the solder bump substantially perpendicular to a main surface of the device chip. It has a solder bump breaking step of pulling up the solder bump in the direction to break the solder bump, and an inspection step of judging the bonding characteristics of the solder bump based on the state of the broken surface of the solder bump.

As described above, in the method of manufacturing a semiconductor device according to the second aspect, the solder bump of the device chip is pulled upward to break the solder bump, and the state of the fracture surface of the solder bump at that time is used as an index. An inspection is performed to determine the quality of the solder bumps. In other words, based on the rupture state set by an experiment using a good sample and a defective sample in advance, when more solder residual film remains on the fracture surface on the device chip side and the exposure of the base of the solder bump is less. Determines that the bonding properties of the solder bumps are good, and if less solder residual film remains on the fracture surface on the device chip side, and if the underlying base of the solder bumps is more exposed, It is determined that the bonding characteristics are poor.

For this reason, an abnormality in the solder bump formation step, for example, an organic matter residue at the interface between the solder bump and its underlying film suddenly causes a defective joint strength, and this abnormality is detected by a conventional electrical characteristic inspection. Even when the solder bumps cannot be formed, defective bonding of the solder bumps due to the solder bump forming process is detected, and the quality of the bonding characteristics is determined easily and with high sensitivity.

Therefore, the inspection process for judging the bonding characteristics of the solder bumps is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board, thereby strictly selecting good products. Since only the formed bump forming chip is mounted on the mounting substrate and assembled as a product device, the reliability and durability of the final product device are greatly improved as compared with those obtained by the conventional manufacturing process. Further, even when a bonding defect of the solder bump is detected, the time until the information is fed back to the process of forming the solder bump is also shorter than before, so that the generation of a large number of defective products during that time is suppressed. .

The inspection method using the tensile strength of the solder bump according to claim 1 as an index and the inspection method using the state of the fracture surface of the solder bump as an index according to claim 2 are combined. An inspection step for determining whether the characteristics are good or bad may be used. In this case, they complement each other
Reinforcement makes it possible to more accurately judge the bonding characteristics of the solder bumps, so that only bump-forming chips that are even more strictly selected are mounted on the mounting board, and the reliability of the final product device is improved. The properties and durability are further improved.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the first or second aspect, the solder bump breaking step includes mounting the device chip via a solder bump. After implementing in
The process is characterized in that the device chip is pulled up in a direction substantially perpendicular to the main surface of the mounting substrate to break the solder bumps. Thus, in the method of manufacturing a semiconductor device according to the third aspect, after mounting the device chip on the mounting substrate via the solder bump, the device chip is pulled up in a direction substantially perpendicular to the main surface of the mounting substrate. The solder bump is broken by the test, and the inspection using the tensile fracture strength of the solder bump at that time as an index or the inspection using the state of the fracture surface of the bump as an index is performed. The bonding characteristics of the solder bumps with the chips mounted on the mounting board in advance are judged as good or bad, and only bump forming chips of strictly selected product lots are mounted on the mounting board and assembled as product devices. The reliability and durability of various product devices are greatly improved. In addition, since the time until the information on the bonding failure of the solder bumps is fed back to the solder bump forming process is shorter than before, the occurrence of a large number of defective products during that time is suppressed.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first or second aspect, wherein the solder bump breaking step includes mounting the device chip via a solder bump. Before the mounting process for mounting on the device, the probe is fixed to the solder bump of the device chip, and the probe fixed to the solder bump is raised in a direction substantially perpendicular to the main surface of the device chip,
The feature is that it is a process of breaking the solder bump. Thus, in the method of manufacturing a semiconductor device according to the fourth aspect, before the mounting step of mounting the device chip on the mounting board via the solder bump, the probe fixed to the solder bump of the device chip is connected to the device. Mounting is performed by raising the solder bump in a direction substantially perpendicular to the main surface of the chip and breaking the solder bump, and performing an inspection using the tensile breaking strength of the solder bump as an index or an inspection using the state of the bump fracture surface as an index. The quality of the solder bump bonding characteristics of the test device chip extracted from the previous product lot is judged, and only the bump forming chips of the strictly selected product lot are mounted on the mounting board and assembled as product devices As a result, the reliability and durability of the final product device are greatly improved. Further, since the time until the information on the bonding failure of the solder bump is fed back to the solder bump forming process is further shortened compared to the case of the method of manufacturing a semiconductor device according to the third aspect, a large number of defective products during that time. Is more effectively suppressed.

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first or second aspect, after the solder bump forming step and before the inspection step, a device chip is provided. To the specified heat treatment,
It is characterized in that it has a characteristic deterioration accelerating step of acceleratingly deteriorating the bonding characteristics of the solder bumps. As described above, in the method of manufacturing a semiconductor device according to the fifth aspect, the heat diffusion is performed on the device chip before the inspection step, so that the thermal diffusion of the metal atoms constituting the solder bumps and the base film is excessively advanced. Therefore, the deterioration of the bonding characteristics of the solder bumps is forcibly accelerated, so that the quality of the bonding characteristics of the solder bumps is determined and the reliability life thereof is predicted and evaluated. For this reason, a bonding failure of the solder bumps occurs due to a subtle abnormality in the solder bump forming step, and this subtle abnormality cannot be detected by the conventional electrical characteristic inspection, but also in the above-mentioned claim 1. In the method of manufacturing a semiconductor device according to the second aspect, even if it cannot be detected even by an inspection method without the characteristic deterioration accelerating step, a bonding defect of the solder bump due to the solder bump forming process is detected and the bonding is performed. The quality of the characteristics is determined easily and with high sensitivity. Therefore, an inspection process for judging the quality of the bonding characteristics of the solder bumps and predicting and evaluating the reliability life thereof is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board. Thereby, the above claim 1 or 2
In the method of manufacturing a semiconductor device according to the present invention, only bump-forming chips that have been selected more strictly and non-defectively than in the case where there is no step of accelerating the characteristic deterioration are mounted on a mounting substrate and assembled as a product device. The characteristics and durability are further improved as compared with the case where the characteristic deterioration accelerating step is not provided in the method for manufacturing a semiconductor device according to claim 1 or 2.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device according to the fifth aspect, the step of accelerating the characteristic deterioration includes the step of:
The process is characterized by a heat treatment at a temperature of 00 to 300 ° C. for 50 to 2000 hours. As described above, in the method of manufacturing a semiconductor device according to the sixth aspect, by performing the heat treatment at a temperature of 100 to 300 ° C. for 50 to 2000 hours, the bonding characteristics of the solder bumps can be reduced without causing defective solder bumps. , A heat treatment at a high temperature for a long time is realized as a characteristic deterioration accelerating step capable of accelerating the deterioration. That is, when the heat treatment temperature and the heat treatment time fall below the above ranges as the conditions of the heat treatment for a long time at a high temperature, the effect of accelerating the deterioration of the characteristics of the solder bump is lost. Since even the bumps are likely to be determined to be defective and cause the inspection accuracy to deteriorate, the conditions for the heat treatment at a high temperature and a long time as the characteristic deterioration accelerating step are the above-mentioned temperatures of 100 to 300 ° C. and 50 ° C.
~ 2000 hours are preferred. In addition, as the process of accelerating the deterioration of the characteristics of the solder bumps, a process of applying a temperature cycle used in a normal inspection before product shipment may be used, but a process of applying a heat treatment for a long time at a high temperature is easier. . The atmosphere in the case of the heat treatment for a long time at a high temperature is usually sufficient if the atmosphere is adjusted to a predetermined relative humidity since the final use environment of the assembled product is the atmosphere. However, when it is necessary to examine in detail the content of a specific defect in the solder bump formation process or to quantitatively interpret the deterioration, an inert gas atmosphere such as a nitrogen gas atmosphere may be used.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the first or second aspect, after the solder bump forming step and before the inspection step, a device chip is provided. To the specified heat treatment,
A step of accelerating the property deterioration of the bonding property of the solder bump at an accelerated rate, wherein the solder bump breaking step includes mounting the device chip on the mounting board via the solder bump, and then mounting the device chip on the mounting board. It is characterized in that it is a step of pulling up in a direction substantially perpendicular to the main surface to break the solder bump. Thus, in the method of manufacturing a semiconductor device according to claim 7, after mounting the device chip on the mounting substrate via the solder bump, the device chip is pulled up in a direction substantially perpendicular to the main surface of the mounting substrate. When performing an inspection using the tensile fracture strength of the solder bump as an index or an inspection using the state of the fractured surface of the bump as an index, heat-treat the device chip before the inspection process. As a result, devices and devices for testing extracted from product lots before mounting
The bonding characteristics of the solder bumps in which the chip was mounted on the mounting board in advance were determined, and only the bump forming chips of the strictly selected product lots were mounted on the mounting board.
Because it is assembled as a product device, the reliability and durability of the final product device are greatly improved,
Since the thermal diffusion of the metal atoms constituting the solder bumps and the underlying film is intentionally made to proceed excessively, the deterioration of the bonding characteristics of the solder bumps is forcibly accelerated, and the reliability life thereof is predicted and evaluated.

[0032]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) In a first embodiment of the present invention, after a solder ball bump forming step of forming a solder ball bump on an electrode pad portion of a device chip, a device chip is connected via the solder ball bump. Before the mounting process of flip-chip mounting on a printed wiring board, the scissor-shaped physical inspection probe fixed to the solder ball bump is raised in a direction substantially perpendicular to the main surface of the device chip to break the solder ball bump In addition, a tensile breaking inspection step for judging the bonding characteristics of the solder ball bump based on the tensile breaking strength of the solder ball bump and the state of the bump fracture surface at that time is provided.

The method of manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS. Here, FIGS. 1 to 3 are schematic cross-sectional views each showing a state in which a solder ball bump of a device chip is broken using a scissor-like physical inspection probe in a tensile breaking inspection process, and FIGS. It is a schematic sectional drawing which shows the state of the fracture surface of a solder ball bump in an inspection process.

First, a device chip 21 on which the solder ball bumps 17 are formed as shown in FIG. 1 is manufactured. However, the steps of forming the solder ball bumps 17 are the same as those in the conventional case shown in FIGS. In the device chip 21 manufactured as described above, as shown in FIG. 1, an Al electrode pad 12 is formed as an external connection terminal of an LSI (not shown) formed on the surface of the semiconductor substrate 11. I have. The entire surface of the semiconductor substrate 11 is covered with a passivation film 15 in which a silicon nitride film and a polyimide film are laminated in this order. Also,
A BLM film 16 connected to the Al-based electrode pad 12 through a connection hole opened in the passivation film 15 is formed. The solder ball bumps 20 are formed on the BLM film 16.

Here, the BLM film 16 has a thickness of about 0.1 mm.
It has a three-layer structure in which a 1 μm Cr film, a Cu film having a thickness of about 1.0 μm, and an Au film having a thickness of about 0.1 μm are stacked in this order. In addition, the solder ball bump 20 is 97%
Pb-3% Sn alloy is used as a constituent material. The contact area between the BLM film 16 and the solder ball bump 20 is 6.4 × 10 ^{3 to} 2.8 × 10 ⁴ μm ² .

Next, a tensile breakdown test is performed on the solder ball bumps 20 formed on the device chip 21. That is, as shown in FIG. 1, the device chip 21 is set on a tensile tester, and a scissors-shaped physical measurement probe 31 is arranged above the device chip 21. Here, the scissor-shaped physical measurement probe 31 is a physical inspection probe that has a scissor-shaped jig for holding the solder ball bumps 20 of the device chip 21 and is movable in the vertical direction. After the alignment with the solder ball bumps 20 of the device chip 21 is performed, the scissor-shaped physical measurement probe 31 is lowered in the direction indicated by the arrow in the figure.

The height and size of the solder ball bump 20 differ depending on the type of device chip. For example, when the solder ball bumps 20 are directly arranged in the region directly above the Al electrode pads 12 arranged around the chip, the height thereof is about 65 μm, but the height is about 65 μm. When rearranged outside the region, the possibility of contact between the adjacent solder ball bumps 20 is reduced, so that the size of the solder ball bumps 20 can be increased. Therefore, it is necessary to optimize the scissor-shaped jig of the physical measurement probe 31 according to the size of the solder ball bump 20.

Subsequently, as shown in FIG. 2, the solder ball bump 20 is sandwiched by using a scissor-like jig of the physical measurement probe 31, and the physical measurement probe 31 is fixed to the solder ball bump 20.

Subsequently, as shown in FIG. 3, the physical measurement probe 31 fixed to the solder ball bump 20 is raised in the direction shown by the arrow in the figure. At this time, a load is applied to the scissors-shaped physical measurement probe 31 until the solder ball bump 20 breaks. The lifting speed and the lifting distance of the scissors-shaped physical measurement probe 31 are respectively: lifting speed: 0.1 mm / sec, lifting distance: 0.5 mm.

As a result, the solder ball bump 20 is pulled upward, and is finally broken from the vicinity of the underlying BLM film 16. At this time, the load applied to the physical measurement probe 31 until the solder ball bump 20 breaks, that is, the tensile breaking strength of the solder ball bump 20 is detected by a load cell (not shown) provided in the testing machine. Based on the peak value and the state of the bump fracture surface, the quality of the joining characteristics of the solder ball bump 20 is determined.

Here, as an example of the evaluation results of the tensile fracture inspection performed by the present inventors, the state of the bump fracture surface when the bonding characteristics of the solder ball bump 20 are good and the bonding characteristics of the solder ball bump 20 are not good. The state of the fracture surface of the bump in the case is shown in comparison with FIGS.

In the case of a non-defective sample extracted from a normal product lot, that is, the quality of the solder ball bump 20 is good, and the alloying reaction with the BLM film 16 has sufficiently proceeded to achieve excellent base adhesion. Device chip 2
In the case of No. 1, as shown in FIG. 4, the bump fracture surface on the semiconductor substrate 11 side after the solder ball bump 20 is fractured by using the physical measurement probe 31 is a part of the ductile fractured solder ball bump 20. Was left so as to cover the entire surface of the underlying BLM film 16. At this time, the solder ball bump 2
The probe load at the breaking limit of 0, that is, the tensile breaking strength is
It was 60 to 62 gf.

On the other hand, in the case of a defective product sample extracted from a product lot in which a defect occurred in the process of forming the solder ball bump 20, that is, the quality of the solder ball bump 20 was poor, and In the case of the device chip 21 lacking the solder bumps, as shown in FIG. 5, the brittle fracture occurs on the bump fracture surface on the semiconductor substrate 11 side after the solder ball bump 20 is fractured using the physical measurement probe 31. The solder residual film, which is a part of the solder ball bumps 20, hardly remains, and the slightly remaining solder residual film 20 b covers a part of the surface of the underlying BLM film 16, and the surface of the BLM film 16 turned brownish brown Was exposed. At this time, the tensile breaking strength at the breaking limit of the solder ball bump 20 is 5
It was 5 gf.

In this manner, the solder ball bumps 20 for the non-defective sample and the defective sample are obtained.
By accumulating data on the tensile fracture strength of the solder ball bumps 20 and the state of the bump fracture surface, it is possible to set a criterion for judging the bonding characteristics of the solder ball bumps 20. Therefore, when a sample whose solder ball bump 20 has uncertainty in bonding characteristics is unknown, the solder ball bump 20 is subjected to a tensile fracture test in which the solder ball bump 20 is broken using a scissor-like physical measurement probe 31. By measuring the tensile breaking strength and observing the fracture surface of the bump on the semiconductor substrate 11 side, and comparing the result with a set reference, an abnormality that cannot be detected by the conventional electrical property inspection, for example, a solder ball Even if the bonding strength defect due to the organic residue at the interface between the bump 20 and the underlying BLM film 16 suddenly occurs in the solder ball bump forming step, the solder ball bump 2
It is possible to determine the quality of the bonding property of 0 simply and with high sensitivity.

Then, such a solder ball bump 2
The semiconductor chip manufacturing line incorporates a tensile fracture inspection process for determining the quality of the bonding
By performing the flip-chip mounting process on the first printed circuit board, only the device chip 21 on which the solder ball bumps 20 strictly selected for good bonding characteristics are formed is flip-chip mounted and assembled as a product device. Therefore, the reliability and durability of the final product device can be greatly improved as compared with those obtained by the conventional manufacturing process. Further, even when a bonding defect of the solder ball bump 20 is detected, the time required for the information to be fed back to the process of forming the solder ball bump 20 is shortened as compared with the conventional case. Generation can be suppressed.

Note that the tensile breaking inspection method for judging the bonding characteristics of the solder ball bumps 20 according to the present embodiment is literally a destructive method. Shall be performed as

(Second Embodiment) In a second embodiment of the present invention, after a solder ball bump forming step of forming a solder ball bump on an electrode pad portion of a device chip, a predetermined shape is formed on the device chip. After undergoing a heat treatment to accelerate the deterioration of the bonding characteristics of the solder ball bumps, the solder ball bumps are mounted before the mounting process of mounting the device chip on the printed wiring board through the solder ball bumps. The scissor-like physical inspection probe fixed to the device chip is lifted in a direction substantially perpendicular to the main surface of the device chip to break the solder ball bumps and to determine the tensile breaking strength of the solder ball bumps and the fracture surface of the bumps. The method is provided with a tensile destruction inspection step for judging the quality of the bonding property of the solder ball bump based on the state. That is, a characteristic deterioration acceleration step is provided before the tensile fracture inspection step in the first embodiment.

The method of manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS. Here, FIG. 6 is a graph showing changes in the tensile breaking strength of non-defective / defective solder ball bumps and the rate of occurrence of abnormalities in the fracture surface of the bumps in the characteristic deterioration accelerating step. Since FIGS. 1 to 5 are the same as those in the first embodiment, they are used as they are in the present embodiment.

First, a device chip 21 on which the solder ball bumps 17 as shown in FIG. 1 are formed is manufactured. However, the steps of forming the solder ball bumps 17 are the same as those in the conventional case shown in FIGS. Next, before performing a tensile breakdown test on the solder ball bumps 20 formed on the device chip 21, a heat treatment at a high temperature and a long time is applied. For example, the device chip 21 is set in an air atmosphere in a heating oven and left at a set temperature of 150 ° C. for 220 hours.

Incidentally, a predetermined heat history is already applied to the device chip 21 in the solder film forming process and the wet back process until the solder ball bump 20 is completed. Therefore, the Cr film / Cu film /
An alloy layer is formed by diffusing Pb and Sn, which are constituent elements of the solder film, in part of the uppermost Au film of the BLM film 16 having a three-layer structure of the Au film and a part of the thick Cu film below the Au film. Thus, the lower layer side of the Cu film and the lowermost Cr film remain unreacted. The progress of the metal diffusion and alloying reaction easily fluctuates even by a small amount of impurities or a change in temperature. That is, the solder ball bump joint is an extremely complex multi-element system in which each component element exists with a delicate balance. Therefore, the device on which such solder ball bumps 20 are formed,
Applying a heat treatment at a high temperature for a long time before performing the tensile fracture test on the chip will cause the thermal diffusion of the constituent atoms of the BLM film 16 and the solder ball bumps 20 to excessively proceed, and predict the reliability life. This has the meaning of a characteristic deterioration accelerated test for acceleratingly deteriorating the bonding characteristics of solder ball bumps for evaluation. At this time, the heat treatment for a long time at a high temperature must have a larger total heat energy than the heat history applied in the solder film forming step and the wet back step.

Next, as such a characteristic deterioration acceleration test, the solder ball bumps 20 of the device chip 21 subjected to a high-temperature and long-time heat treatment at a temperature of 150 ° C. for 220 hours are performed.
For a tensile fracture test. That is, as shown in FIG. 1, the device chip 21 is set on a tensile tester, and a scissor-shaped physical measurement probe 31 and a device
After the alignment with the solder ball bumps 20 of the chip 21, the scissors-shaped physical measurement probe 31 is lowered in the direction indicated by the arrow in the figure.

Subsequently, as shown in FIG. 2, the solder ball bump 20 is sandwiched by using a scissor-like jig of the physical measurement probe 31, and the scissor-like physical measurement probe 31 is fixed to the solder ball bump 20. After that, as shown in FIG. 3, the scissors-shaped physical measurement probe 31 is raised in the direction indicated by the arrow in the figure. At this time, a load is applied to the scissors-shaped physical measurement probe 31 until the solder ball bump 20 breaks. The lifting speed and the lifting distance of the scissors-shaped physical measurement probe 31 are the same as those in the first embodiment.

As a result, the solder ball bump 20 is pulled upward, and is finally broken from the vicinity of the underlying BLM film 16. At this time, the load applied to the physical measurement probe 31 until the solder ball bump 20 breaks, that is, the tensile breaking strength of the solder ball bump 20 is detected by a load cell provided in the tester, and its peak value and bump breakage are detected. Based on the state of the cross section, the solder ball bump 2
The quality of the bonding property of 0 is determined.

Here, as an example of the evaluation results of the tensile fracture test performed by the present inventors, the state of the bump fracture surface when the bonding characteristics of the solder ball bump 20 are good and the bonding characteristics of the solder ball bump 20 are not good. The state of the fracture surface of the bump in the case is shown in comparison with FIGS. 4 and 5, respectively.

In the case of a non-defective sample in which the quality of the solder ball bumps 20 of the device chip 21 is good and the alloying reaction with the BLM film 16 has sufficiently proceeded to achieve excellent base adhesion, Temperature 1 before tensile fracture test
Even if a high temperature and long time heat treatment of 50 ° C and 220 hours are added,
As shown in FIG. 4, a solder residual film 20 a, which is a part of the solder ball bump 20 that has been ductilely broken, remains on the bump fracture surface on the semiconductor substrate 11 side so as to cover the entire surface of the underlying BLM film 16. It was in a state where it was done. At this time, the tensile breaking strength of the solder ball bump 20 is 6
2 to 63 gf, which was almost the same as the case where the heat treatment for a long time at a high temperature was not applied before the tensile fracture test.

On the other hand, in the case of a defective sample in which the quality of the solder ball bumps 20 of the device chip 21 is poor and the adhesion of the underlayer to the BLM film 16 is insufficient, before the tensile breakdown test, When a heat treatment at a temperature of 150 ° C. for 220 hours is applied for a long time at a high temperature, as shown in FIG. The film hardly remained, and the slightly remaining solder residual film 20b covered a part of the surface of the underlying BLM film 16, so that most of the surface of the BLM film 16 that turned brownish was exposed. The tensile breaking strength at the breaking limit of the solder ball bump 20 at this time is 43 gf, which is about 12 gf even when the same defective sample is not subjected to a high-temperature and long-time heat treatment before the tensile breaking test. It was even lower.

Next, the tensile breaking strength and the tensile strength of the solder ball bump 20 when the standing time was changed in the range of 50 to 260 hours while maintaining the temperature in the heat treatment for a long time at a high temperature before the tensile breaking test was maintained at 150 ° C. The abnormal occurrence rate of the fracture surface of the bump was measured. Here, the abnormality occurrence rate of the bump fracture surface refers to the bump fracture surface on the semiconductor substrate 11 side among the 25 measured solder ball bumps 20 per device chip, as shown in FIG. A solder ball in which a solder residual film which is a part of the brittle-ruptured solder ball bump 20 does not remain at all or only slightly remains, and most of the surface of the BLM film 16 discolored to brown is exposed. This is a ratio of the number of bumps 20.

The results of this measurement are shown in the graph of FIG.
The horizontal axis of this graph indicates that the device chip 21 has a temperature of 150.
The vertical axis indicates the time [hours] of standing at 0 ° C., and the vertical axis indicates the tensile breaking strength [gf] of the solder ball bump 20 corresponding to the white plot (□-□, Δ- △, ○-○), The abnormal occurrence rate [%] of the bump fracture surface corresponding to the plot (■-■, ●-●) is shown. The square plots (□-□, ■-■) and the triangle plots (△-を) represent the case of good solder ball bumps respectively, and the circle plots (○-○, ●-●) represent the case of defective solder ball bumps. Represents the case.

The tensile breaking strength in the case of a good solder ball bump was 61 to 62 gf as described in the first embodiment when heat treatment for a long time at high temperature was not applied. When added, the value of the tensile breaking strength is slightly changed, but 50-26.
There was almost no change in the 0 hour range. Further, the abnormal occurrence rate of the fracture surface of the bump in the case of a good solder ball bump hardly increases until about 220 hours, slightly increases after 220 hours, and sharply increases after 240 hours. Was.

On the other hand, in the case of defective solder ball bumps, when the heat treatment for a long time at high temperature is not applied, the tensile breaking strength is 5 as described in the first embodiment.
However, when a heat treatment at a temperature of 150 ° C. was applied, the value of the tensile breaking strength began to decrease rapidly after 220 hours, and after a lapse of 240 hours, the value of the tensile fracture strength became 43 gf.
gf. Further, the abnormal occurrence rate of the bump fracture surface in the case of defective solder ball bumps starts to increase rapidly after about 130 hours, and after 240 hours, the abnormality occurrence rate of the bump fracture area becomes 100%. An error occurred.

In the case of a defective solder ball bump,
Compared to good solder ball bumps, the high-temperature heat treatment time until the bump fracture surface becomes abnormal, that is, the life is significantly shortened, and this life is approximately the same as the high-temperature heat treatment time at which the tensile strength starts to decrease. Was. That is, there is a strong correlation between the tensile fracture strength of the solder ball bump 20 and the change in the properties of the bump fracture surface, and the measurement of the tensile fracture strength by the tensile tester and the observation of the bump fracture surface complement and reinforce each other. It was supported that it could be an inspection method.

In this way, the solder ball bumps 20 for the non-defective sample and the defective sample are obtained.
By accumulating data on the tensile breaking strength and the abnormal occurrence rate of the bump fracture surface, it is possible to set a criterion for judging the bonding characteristics of the solder ball bumps 20.

Therefore, when a sample whose bonding characteristics of the solder ball bumps 20 are unclear is not known, for example, a high-temperature and long-time heat treatment at a temperature of 150.degree. The tensile breaking strength of the solder ball bump 20 when the solder ball bump 20 was broken using the physical measurement probe 31 and the abnormal occurrence rate of the bump fracture surface on the semiconductor substrate 11 side were measured, and the result was compared with a set reference. By matching, a subtle abnormality that cannot be detected by the conventional electrical characteristic inspection nor the tensile breakdown inspection of the first embodiment suddenly occurs in the solder ball bump forming step. In addition, the quality of the bonding characteristics of the solder ball bumps 20 can be determined easily and with high sensitivity.

A tensile destruction inspection step for judging the bonding characteristics of the solder ball bumps 20 after the characteristic deterioration accelerating step for intentionally accelerating the deterioration of the solder ball bump joints is performed on a semiconductor device manufacturing line. By incorporating and performing prior to the step of flip-chip mounting the device chip 21 on the printed wiring board, the solder ball bumps 20 whose joining characteristics were more strictly selected than those of the first embodiment were formed. Since only the device chip 21 is flip-chip mounted and assembled as a product device, the reliability and durability of the final product device are further improved as compared with the case of the first embodiment. Can be.

Since the tensile breaking inspection method for judging the quality of the bonding characteristics of the solder ball bumps 20 according to the present embodiment is a literally destructive method, a target number of the device chips 21 sampled for each manufacturing lot is targeted. Shall be performed as

(Third Embodiment) In a third embodiment of the present invention, after a solder ball bump forming step for forming a solder ball bump on an electrode pad portion of a device chip, a device is formed via the solder ball bump. -Before the mounting process of mounting the chip on the printed wiring board, the heatable rod-shaped physical inspection probe fixed to the solder ball bump is raised in a direction substantially perpendicular to the main surface of the device chip, and the solder ball bump is lifted. And a tensile fracture inspection step of judging the bonding characteristics of the solder ball bump based on the tensile fracture strength of the solder ball bump and the state of the fracture surface of the bump at that time. That is, in the tensile destruction inspection process of the solder ball bump, a heatable rod-shaped physical inspection probe is used instead of the scissor-shaped physical inspection probe in the first embodiment.

The method of manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS. Here, FIG. 7 to FIG. 9 each show a device / device using a rod-shaped physical inspection probe that can be heated in the tensile fracture inspection process.
FIG. 4 is a schematic cross-sectional view showing a state in which a solder ball bump of a chip is broken. The same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted.

First, the device chip 21 on which the solder ball bumps 17 are formed as shown in FIG. 7 is manufactured. However, the steps of forming the solder ball bumps 17 are the same as those in the conventional case shown in FIGS.

The device manufactured as described above
The chip 21 is, as shown in FIG.
A passivation film 1 composed of a silicon nitride film and a polyimide film purely laminated on the entire surface of a substrate on an Al electrode pad 12 as an external connection terminal of an LSI formed on the surface.
5 through a connection hole opened at 5.
r film, a Cu film having a thickness of about 1.0 μm, and a thickness of about 0.1 μm
B film 1 having a three-layer structure in which m Au films are stacked in this order.
6 are formed on the BLM film 16, and 9
A solder ball bump 20 made of a 7% Pb-3% Sn alloy is formed. Here, the contact area between the BLM film 16 and the solder ball bump 20 is 6.4 × 10
^{3 to} 2.8 × 10 ⁴ μm ² .

Next, a tensile breakdown test is performed on the solder ball bumps 20 formed on the device chip 21. That is, as shown in FIG. 7, the device chip 21 is set on a tensile tester, and a heatable rod-shaped physical measurement probe 32 is arranged above the device chip 21. Here, the heatable rod-shaped physical measurement probe 32 is a physical inspection probe which has a heatable rod-shaped jig for piercing the solder ball bump 20 of the device chip 21 and is movable in the vertical direction. Then, after the alignment with the solder ball bumps 20 of the device chip 21 is performed, the physical measurement probe 32 is lowered in the direction indicated by the arrow in the drawing while the rod-shaped jig is being heated.

Subsequently, as shown in FIG. 8, a heated rod-shaped jig of the physical measurement probe 32 is pierced into the solder ball bump 20. At this time, the rod-shaped jig of the physical measurement probe 32 is heated, and the solder ball bumps 20 with which the tips contact are partially melted.
Easy to pierce. Thereafter, the rod-shaped jig of the physical measurement probe 32 is cooled, thereby fixing the rod-shaped jig of the physical measurement probe 32 and the solder ball bump 20.

Subsequently, as shown in FIG. 9, a rod-shaped physical measurement probe 3 fixed to the solder ball bump 20 is formed.
2 is raised in the direction indicated by the arrow in the figure. At this time, the rod-shaped physical measurement probe 32 is
Apply load until 0 breaks. The pulling speed and the pulling distance of the rod-shaped physical measurement probe 32 are respectively set to a pulling speed: 0.1 mm / sec and a pulling distance: 0.5 mm.

As a result, the solder ball bump 20 is pulled upward, and is finally broken from the vicinity of the underlying BLM film 16. At this time, the load applied to the physical measurement probe 32 until the solder ball bump 20 breaks, that is, the tensile breaking strength of the solder ball bump 20 is detected by a load cell (not shown) provided in the testing machine. Based on the peak value and the state of the fracture surface of the bump, the quality of the bonding property of the solder ball bump 20 is determined.

That is, as in the case of the first embodiment, the quality of the solder ball bump 20 is good and the BL
A non-defective sample in which the alloying reaction with the M film 16 has sufficiently proceeded to achieve excellent base adhesion, and the quality of the solder ball bump 20 is poor, and the base adhesion with the BLM film 16 is insufficient. Data on the tensile breaking strength of the solder ball bumps 20 and the state of the fracture surface of the bumps in the case of the defective product sample is accumulated, and a reference for determining the quality of the bonding characteristics of the solder ball bumps 20 is set.

Thereafter, a tensile failure test for breaking the solder ball bump 20 using the physical measurement probe 32 is performed on a sample whose bonding characteristics of the solder ball bump 20 are unknown, and the tensile fracture of the solder ball bump 20 is performed. By comparing the result of the strength measurement and the observation of the fracture surface of the bump with the set reference, when an abnormality that cannot be detected by the conventional electrical characteristic inspection suddenly occurs in the solder ball bump formation process Even if there is, it is possible to determine the quality of the bonding characteristics of the solder ball bumps 20 easily and with high sensitivity.

Then, such a solder ball bump 2
The semiconductor chip manufacturing line incorporates a tensile fracture inspection process for determining the quality of the bonding
As described in the first embodiment, the reliability and durability of the final product device can be compared with those obtained by the conventional manufacturing process by performing the process prior to the flip-chip mounting process on the first printed wiring board. Can be greatly improved. In addition, since the time until the information on the bonding failure of the solder ball bumps 20 is fed back to the process of forming the solder ball bumps 20 is also shorter than before, it is possible to suppress the occurrence of a large number of defective products during that time.

The tensile breaking inspection method for judging the bonding characteristics of the solder ball bumps 20 according to the present embodiment is a literally destructive method. Shall be performed as

(Fourth Embodiment) In a fourth embodiment of the present invention, following a solder ball bump forming step of forming a solder ball bump on an electrode pad portion of a device chip, a predetermined number of solder ball bumps are formed on the device chip. After undergoing a heat treatment to accelerate the deterioration of the bonding characteristics of the solder ball bumps, the solder ball bumps are mounted before the mounting process of mounting the device chip on the printed wiring board through the solder ball bumps. The heatable rod-shaped physical inspection probe fixed to the device chip is lifted in a direction substantially perpendicular to the main surface of the device chip to break the solder ball bump, and at that time, the tensile breaking strength of the solder ball bump and the bump breakage. A tensile breaking inspection step is provided for determining the quality of the bonding characteristics of the solder ball bump based on the state of the cross section. That is, before the tensile fracture inspection step in the third embodiment, a characteristic deterioration accelerating step similar to that in the second embodiment is provided.

The method of manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS. Note that FIGS. 7 to 9 are the same as those in the third embodiment, and thus are directly used in this embodiment.

First, a device chip 21 on which the solder ball bumps 17 are formed as shown in FIG. 7 is manufactured. However, the steps of forming the solder ball bumps 17 are the same as those in the conventional case shown in FIGS.

Next, a heat treatment for a long time at a high temperature is applied before the tensile breakdown test is performed on the solder ball bumps 20 formed on the device chip 21. For example, the device chip 21 is placed in an air atmosphere in a heating oven.
Is set and left at a set temperature of 150 ° C. for 220 hours. In this way, the thermal diffusion of the constituent atoms of the BLM film 16 and the solder ball bumps 20 is intentionally excessively advanced, thereby rapidly deteriorating the bonding characteristics of the solder ball bumps 20 for predicting and evaluating the reliability life. A characteristic deterioration acceleration test is performed.

Next, a tensile breakdown test is performed on the solder ball bumps 20 of the device chip 21 subjected to the heat treatment at a temperature of 150 ° C. and a high temperature of 220 hours as an accelerated deterioration test. That is, as shown in FIG. 7, after setting the device chip 21 in a tensile tester and aligning the heatable rod-shaped physical measurement probe 32 with the solder ball bump 20 of the device chip 21, Then, the physical measurement probe 32 is lowered in the direction shown by the arrow in the figure while the rod-shaped jig is heated.

Subsequently, as shown in FIG. 8, a heated rod-shaped jig of the physical measurement probe 32 is pierced into the solder ball bump 20, and then the rod-shaped jig is cooled to obtain the physical measurement. The measurement probe 32 and the solder ball bump 20 are fixed.

Subsequently, as shown in FIG. 9, a rod-shaped physical measurement probe 3 fixed to the solder ball bump 20 is formed.
2 is raised in the direction indicated by the arrow in the figure. At this time, the rod-shaped physical measurement probe 32 is
Apply load until 0 breaks. Further, the lifting speed and the lifting distance of the rod-shaped physical measurement probe 32 are the same as those in the third embodiment.

As a result, the solder ball bump 20 is pulled upward, and is finally broken from the vicinity of the underlying BLM film 16. At this time, the load applied to the physical measurement probe 31 until the solder ball bump 20 breaks, that is, the tensile breaking strength of the solder ball bump 20 is detected by a load cell provided in the testing machine.

Next, when the heat treatment time is changed in the range of 50 to 260 hours while maintaining the temperature in the heat treatment for a long time at a high temperature before the tensile fracture inspection, the fracture surface of the solder ball bump 20 is changed. The abnormal occurrence rate and the tensile breaking strength of the solder ball bump 20 are measured. As a result, substantially the same data as the case shown in the graph of FIG. 6 in the second embodiment was obtained.

In this way, the solder ball bumps 20 for the non-defective sample and the defective sample are obtained.
After accumulating data on the tensile breaking strength of the solder ball bump 20 and the abnormal occurrence rate of the bump fracture surface, and setting the criteria for judging the bonding characteristics of the solder ball bump 20, the solder ball bump 2
Tensile fracture in which a solder ball bump 20 is fractured by using a physical measurement probe 32 after subjecting a sample whose quality of bonding characteristics is unknown to 0 to a heat treatment of, for example, a high temperature and a long time of 220 to 240 hours at a temperature of 150 ° C. Inspection,
By comparing the results of the measurement of the tensile fracture strength of the solder ball bumps 20 and the observation of the fracture surface of the bumps with the set reference, the detection can be performed by the conventional electrical characteristic inspection or by the tensile fracture inspection of the third embodiment. Even if a subtle abnormality that cannot be performed suddenly occurs in the solder ball bump forming step, it is possible to easily and highly sensitively determine the quality of the bonding characteristics of the solder ball bump 20.

Then, a tensile breaking inspection process for judging the bonding characteristics of the solder ball bumps 20 through a characteristic deterioration acceleration process for intentionally accelerating the deterioration of the solder ball bump bonding portion is performed on a semiconductor device manufacturing line. By incorporating and performing prior to the step of flip-chip mounting the device chip 21 on the printed wiring board, the solder ball bumps 20 whose joining characteristics were more strictly selected than those of the first embodiment were formed. Since only the device chip 21 is flip-chip mounted and assembled as a product device, the reliability and durability of the final product device can be further improved as compared with the third embodiment. .

Note that the tensile breaking inspection method for judging the bonding characteristics of the solder ball bumps 20 in this embodiment is a literally destructive method, and therefore, targets a predetermined number of device chips 21 for each manufacturing lot. Shall be performed as

(Fifth Embodiment) In a fifth embodiment of the present invention, a solder ball bump forming step of forming a solder ball bump on an electrode pad portion of a device chip is performed.
After the mounting step of flip-chip mounting the device chip on the printed wiring board via the solder ball bump, the device chip is lifted in a direction substantially perpendicular to the main surface of the printed wiring board to break the solder ball bump. In addition, a tensile fracture inspection step for judging the bonding characteristics of the solder ball bump based on the tensile fracture strength of the solder ball bump and the state of the bump fracture surface at that time is provided.

The method of manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS.
Here, FIGS. 10 and 12 are schematic cross-sectional views showing a state in which the solder ball bumps are mounted after the flip chip is mounted on the printed wiring board of the device chip in the tensile breaking inspection step, and FIGS. 11 and 13 are respectively figures. 1
FIG. 13 is a partially enlarged view of FIG.

First, the device chip 21 is inserted through the solder ball bumps 17 as shown in FIGS.
Manufactures a semiconductor device which is flip-chip mounted on the printed wiring board 22. However, the process of forming the solder ball bumps 17 and the process of mounting the device chip 21 on the printed wiring board 22 are the same as those in the conventional case shown in FIGS.

As shown in FIGS. 10 and 11, the semiconductor device manufactured as described above has an Al electrode pad 12 as an external connection terminal of an LSI formed on the surface of the semiconductor substrate 11 of the device chip 21. A Cr film having a thickness of about 0.1 μm, a Cu film having a thickness of about 1.0 μm through connection holes opened in a passivation film 15 made of a silicon nitride film and a polyimide film laminated on the entire surface of the substrate,
And an Au film having a thickness of about 0.1 μm
A BLM film 16 having a layer structure is formed.
On the M film 16, a solder ball bump 20 made of a 97% Pb-3% Sn alloy is formed. Here, the contact area between the BLM film 16 and the solder ball bump 20 is 6.4 × 10 ^{3 to} 2.8 × 10 ⁴ μm ² .

On the glass epoxy board 23 of the printed wiring board 22, Cu lands 2 forming a wiring pattern are provided.
4 are formed, and a eutectic solder film 25 is preliminarily provided on the Cu land 24. The surface other than the Cu land 24 is covered with a solder resist film 26. The device chip 21 faces the printed wiring board 22 in a downward direction, and the Cu lands 2 at a plurality of locations where the eutectic solder film 25 of the printed wiring board 22 is preliminarily attached.
4 and a plurality of solder ball bumps 20 of the device chip 21 are heat-welded. Thus, the device chip 21 is flip-chip mounted on the printed wiring board 22.

Next, as described above, the device chip 21
Performs a tensile breakdown test on a plurality of solder ball bumps 20 of a semiconductor device mounted flip-chip on a printed wiring board 22. That is, as shown in FIG. 10, the device chip 21 is set on a tensile tester, and the physical measurement probe 33 movable in the vertical direction is fixed to the device chip 21.

Subsequently, as shown in FIG. 12, the physical measurement probe 33 fixed to the device chip 21 is used.
Is raised in the direction indicated by the arrow in the figure. At this time, the physical measurement probe 33 includes a plurality of solder ball bumps 2.
A load is applied until all 0s break.

As a result, as shown in FIGS. 12 and 13, the device chip 21 is pulled upward, and finally all of the plurality of solder ball bumps 20 become the underlying BL.
The film is broken from the vicinity of the M film 16. At this time, the load applied to the physical measurement probe 33 until all of the plurality of solder ball bumps 20 are broken, that is, the tensile breaking strength of the plurality of solder ball bumps 20 is determined by a load cell ( The bonding characteristics of the solder ball bump 20 are determined based on the peak value and the state of the fracture surface.

That is, a good sample in which the quality of the solder ball bumps 20 is good and the alloying reaction with the BLM film 16 has sufficiently proceeded to achieve excellent underlayer adhesion is obtained. In the case of defective samples having poor quality and poor adhesion of the underlayer to the BLM film 16, the data of the tensile breaking strength of a plurality of solder ball bumps 20 and the state of the fracture surface of the solder balls are accumulated, and the solder ball A criterion for determining the quality of the bonding characteristics of the bump 20 is set.

Then, for a sample whose bonding characteristics of the solder ball bumps 20 are unknown, a tensile breaking test is performed to break the plurality of solder ball bumps 20 by using the physical measurement probe 33, and the plurality of solder ball bumps 20 are inspected. By measuring the tensile breaking strength of the ball bump 20 and observing the fracture surface of the bump, and comparing the result with a set reference, abnormalities that cannot be detected by the conventional electrical characteristic test can be detected. Even if a sudden occurrence occurs in the formation process, it is possible to easily and highly sensitively determine the quality of the bonding characteristics of the solder ball bumps 20.

Then, such a solder ball bump 2
A test device chip extracted from a product lot prior to a flip chip mounting process of mounting the entire product lot on a printed wiring board 22 is incorporated into a semiconductor device manufacturing line to incorporate a tensile fracture inspection process for determining the quality of the bonding characteristics. 21 is mounted on the printed wiring board 22 in advance by flip-chip mounting, and the quality of the bonding characteristics of the solder bumps 20 is determined. As in the case of the first embodiment, the reliability of the final product device is improved. In addition, the durability can be greatly improved as compared with the conventional manufacturing process. In addition, since the time until the information on the bonding failure of the solder ball bumps 20 is fed back to the process of forming the solder ball bumps 20 is also shorter than before, it is possible to suppress the occurrence of a large number of defective products during that time.

Note that the tensile breaking inspection method for judging the bonding characteristics of the solder ball bumps 20 according to the present embodiment is literally a destructive method, and therefore, a predetermined number of device chips 21 sampled for each manufacturing lot are used in advance. In this case, the semiconductor device is flip-chip mounted on the printed wiring board 22.

(Sixth Embodiment) In a sixth embodiment of the present invention, a solder ball bump forming step of forming a solder ball bump on an electrode pad portion of a device chip is performed.
Following the mounting process of flip-chip mounting a device chip on a printed wiring board via these solder ball bumps, the semiconductor device after this mounting is subjected to a predetermined heat treatment to accelerate the deterioration of the bonding characteristics of the solder ball bumps. After the deterioration acceleration step, the device chip is raised in a direction substantially perpendicular to the main surface of the printed wiring board to break the solder ball bumps, and at the same time, to determine the tensile breaking strength of the solder ball bumps and the bump fracture surface. The method is provided with a tensile destruction inspection step for judging the quality of the bonding property of the solder ball bump based on the state. That is, the fifth
A step of accelerating the characteristic deterioration similar to that of the second embodiment is provided before the tensile fracture inspection step in the embodiment.

The method for manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS.
Since FIGS. 10 to 13 are the same as those in the third embodiment, they are used as they are.

First, the device chip 21 is connected via the solder ball bumps 17 as shown in FIGS.
Manufactures a semiconductor device which is flip-chip mounted on the printed wiring board 22. However, the process of forming the solder ball bumps 17 and the process of mounting the device chip 21 on the printed wiring board 22 are the same as those in the conventional case shown in FIGS.

Next, as described above, the device chip 21
Is subjected to a high-temperature and long-time heat treatment before a tensile breaking test is performed on a plurality of solder ball bumps 20 of a semiconductor device which is flip-chip mounted on a printed wiring board 22. For example, the semiconductor device is set in an air atmosphere in a heating oven and left at a set temperature of 150 ° C. for 220 hours. In this way, the thermal diffusion of the constituent atoms of the BLM film 16 and the solder ball bumps 20 is intentionally excessively advanced, thereby rapidly deteriorating the bonding characteristics of the solder ball bumps 20 for predicting and evaluating the reliability life. A characteristic deterioration acceleration test is performed.

Next, a tensile breakdown test is performed on the solder ball bumps 20 connecting the device chip 21 of the semiconductor device and the printed wiring board 22 which have been subjected to the high-temperature and long-time heat treatment as an accelerated deterioration test. I do.
That is, as shown in FIG.
Is set on a tensile tester, and a physical measurement probe 33 movable in the vertical direction is fixed to the device chip 21. Then, as shown in FIG. 12, the physical measurement probe 33 is indicated by an arrow in the figure. Raise in the direction shown. At this time, a load is applied to the physical measurement probe 33 until all of the plurality of solder ball bumps 20 break.

As a result, the device chip 21 is pulled upward as shown in FIGS.
The film is broken from the vicinity of the M film 16. At this time, the load applied to the physical measurement probe 33 until all of the plurality of solder ball bumps 20 are broken, that is, the tensile breaking strength of the plurality of solder ball bumps 20 is determined by a load cell ( The bonding characteristics of the solder ball bump 20 are determined based on the peak value and the state of the fracture surface.

Next, the tension of the plurality of solder ball bumps 20 when the heat treatment time is changed in the range of 50 to 260 hours while the temperature in the heat treatment for a long time at a high temperature before the tensile fracture test is maintained at 150 ° C. Measure the breaking strength and the abnormal occurrence rate of the fracture surface of the bump. As a result, substantially the same data as in the case shown in the graph of FIG. 6 in the second embodiment (when the tensile strength was converted into a value per bump) was obtained.

In this way, the data of the tensile breaking strength of a plurality of solder ball bumps 20 and the abnormal occurrence rate of the bump fracture surface in the case of a good product sample and the case of a defective product sample are accumulated, and After setting the criteria for judging the quality of the bonding characteristics, after subjecting the sample whose quality of the bonding characteristics of the solder ball bumps 20 is unknown to, for example, a high-temperature and long-time heat treatment at a temperature of 150 ° C. and 220 to 240 hours, A plurality of solder ball bumps 20 are subjected to a tensile fracture test to be broken using a physical measurement probe 33, a plurality of solder ball bumps 20 are subjected to a tensile fracture strength measurement, a bump fracture surface is observed, and the result is set. In comparison with the standard set forth above, the conventional electrical characteristic inspection and the tensile fracture inspection of the third embodiment described above can be used. Even if a subtle abnormality that cannot be detected even suddenly occurs in the solder ball bump forming process, it is possible to easily and highly sensitively judge the quality of the bonding characteristics of the solder ball bump 20. Become.

A tensile breaking inspection step for judging the bonding characteristics of the solder ball bumps 20 after the characteristic deterioration accelerating step for intentionally accelerating the deterioration of the solder ball bump joints is performed on a semiconductor device manufacturing line. Prior to the step of incorporating and flip-chip mounting the entire product lot on the printed wiring board 22, the test device chip 21 extracted from the product lot is flip-chip mounted on the printed wiring board 22 in advance, and the solder bumps 2 are formed.
By judging the quality of the bonding characteristics of 0, only the device chip 21 on which the solder ball bumps 20 whose bonding characteristics have been selected as non-defective products are formed more strictly than in the case of the fifth embodiment, and the chip is mounted by flip-chip bonding. Since it is assembled as a product device, the reliability and durability of the final product device can be further improved as compared with the case of the fifth embodiment.

Since the tensile breaking inspection method for judging the quality of the bonding characteristics of the solder ball bumps 20 in this embodiment is a literally destructive method, a predetermined number of device chips 21 sampled for each manufacturing lot are used in advance. It is assumed that the semiconductor device is flip-chip mounted on the printed wiring board 22.

Although the present invention has been described based on the first to sixth embodiments, the present invention is not limited to these embodiments. For example, details such as the type and thickness of each material film of a device chip and a printed wiring board, the configuration of a physical measurement probe, the conditions of a tensile fracture test, and the conditions of a high-temperature and long-time heat treatment as a characteristic deterioration acceleration test, Changes, selections, and combinations can be made as appropriate.

[0113]

As described above, according to the method of manufacturing a semiconductor device of the present invention, the following effects can be obtained. In other words, according to the method of manufacturing a semiconductor device of the present invention, the solder bumps of the device chip are pulled upward to break the solder bumps, and the solder bumps are bonded by using the tensile strength of the solder bumps at that time as an index. By performing an inspection to judge the quality of the characteristics, even if an abnormality occurs suddenly in the solder bump forming process and this abnormality cannot be detected by the conventional electrical characteristic inspection, the solder bump It is possible to detect defective bonding of the solder bumps due to the process of forming the solder bumps, and easily and highly sensitively determine the quality of the bonding characteristics. Therefore, the inspection process for judging the bonding characteristics of the solder bumps is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board. Since only the formed chip is mounted on the mounting substrate and assembled as a product device, the reliability and durability of the final product device can be greatly improved as compared with the related art. In addition, when a solder bump joint failure is detected, the time required for the information to be fed back to the solder bump formation process is shorter than before, so it is possible to suppress the occurrence of a large number of defective products during that time. it can.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device, the solder bumps of the device chip are pulled upward to break the solder bumps, and the bonding of the solder bumps is performed by using the state of the broken surface at that time as an index. By performing an inspection to determine whether the characteristics are good or not, even if an abnormality occurs suddenly in the solder bump forming process and this abnormality cannot be detected by the conventional electrical characteristic inspection, It is possible to detect defective bonding of the solder bumps due to the process of forming the solder bumps, and easily and highly sensitively determine the quality of the bonding characteristics. Therefore, the inspection process for judging the bonding characteristics of the solder bumps is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board. Since only the formed chip is mounted on the mounting substrate and assembled as a product device, the reliability and durability of the final product device can be greatly improved as compared with the related art. In addition, when a solder bump joint failure is detected, the time required for the information to be fed back to the solder bump formation process is shorter than before, so it is possible to suppress the occurrence of a large number of defective products during that time. it can. The combination of the inspection method using the tensile breaking strength of the solder bump according to claim 1 as an index and the inspection method using the state of the fracture surface of the bump according to claim 2 as an index determines whether the bonding characteristics of the solder bump are good or bad. Since the inspection process is used to complement and reinforce each other, it is possible to more accurately judge the quality of the bonding characteristics of the solder bumps. When mounted on a substrate, the reliability and durability of the final product device can be further improved.

According to the method of manufacturing a semiconductor device according to the third aspect, after mounting the device chip on the mounting substrate via the solder bump, the device chip is mounted in a direction substantially perpendicular to the main surface of the mounting substrate. The solder bump is broken by pulling it up and the test is performed using the tensile fracture strength of the solder bump at that time as an index or the state of the bump fracture surface as an index. It is possible to judge the quality of the bonding characteristics of the solder bumps in which the device chip is mounted on the mounting board in advance, and only bump-forming chips of strictly good product lots are mounted on the mounting board. As a result, the reliability and durability of the final product device can be greatly improved. Also,
It is possible to reduce the time required for information about the bonding failure of the solder bump to be fed back to the solder bump forming process, and to suppress the occurrence of a large number of defective products during that time.

According to the method of manufacturing a semiconductor device of the present invention, the probe fixed to the solder bump of the device chip before the mounting step of mounting the device chip on the mounting board via the solder bump. Is raised in a direction substantially perpendicular to the main surface of the device chip to break the solder bumps, and an inspection is performed using the tensile breaking strength of the solder bumps as an index or an inspection using the state of the bump fracture surface as an index. By doing so, it is possible to perform an inspection to determine whether the bonding characteristics of solder bumps are good for test device chips extracted from product lots before mounting,
Only bump-forming chips of a strictly good product lot are mounted on a mounting board and assembled as a product device, so that the reliability and durability of the final product device can be greatly improved. Further, the time until the information on the bonding failure of the solder bump is fed back to the solder bump forming process is further shortened than in the case of the third aspect, and the generation of a large number of defective products during that time is more effectively suppressed. be able to.

According to the method of manufacturing a semiconductor device of the present invention, the device chip is subjected to a predetermined heat treatment after the formation of the solder bumps and before the inspection for judging the bonding characteristics of the solder bumps. In addition, by providing a characteristic deterioration acceleration step that accelerates the deterioration of the bonding characteristics of the solder bumps, the thermal diffusion of the metal atoms forming the solder bumps and the underlying film excessively progresses, and the deterioration of the bonding characteristics of the solder bumps is reduced. Due to forced acceleration, solder bump bonding failures occur due to subtle abnormalities in the solder bump formation process, and this subtle abnormality cannot be detected by conventional electrical characteristic inspection However, in the method of manufacturing a semiconductor device according to claim 1 or 2, it cannot be detected even by an inspection method without a characteristic deterioration accelerating step. In addition, it is possible to detect defective bonding of the solder bumps due to the process of forming the solder bumps, easily and highly sensitively determine the quality of the bonding characteristics, and to predict and evaluate the reliability life. Will be possible. Therefore, an inspection process for judging the quality of the bonding characteristics of the solder bumps and predicting and evaluating the reliability life thereof is incorporated into the production line of the semiconductor device, and is performed prior to the mounting process of the device chip on the mounting board. Thereby, in the method of manufacturing a semiconductor device according to claim 1 or 2, only the bump-forming chips that are strictly selected from non-defective products are mounted on the mounting substrate and assembled as a product device, in a case where there is no characteristic deterioration accelerating step. The reliability and durability of the final product device can be further improved as compared with the case where the method for manufacturing a semiconductor device according to claim 1 or 2 does not include the step of accelerating the characteristic deterioration.

According to the method of manufacturing a semiconductor device of the sixth aspect, by performing the heat treatment at a temperature of 100 to 300 ° C. for 50 to 2,000 hours, a heat treatment at a high temperature and a long time is realized as a characteristic deterioration acceleration step. The reliability of a final product device in the method of manufacturing a semiconductor device according to claim 5, since the bonding characteristics of the solder bump can be acceleratedly degraded without turning a good solder bump into a defective product. And the effect of further improving the durability can be realized.

According to the method of manufacturing a semiconductor device of the present invention, after the device chip is mounted on the mounting substrate via the solder bump, the device chip is mounted in a direction substantially perpendicular to the main surface of the mounting substrate. When the inspection is performed using the tensile breaking strength of the solder bump as an index or the inspection using the state of the fracture surface of the bump as an index, the solder bump is pulled up to the device chip before the inspection process. By applying heat treatment, the bonding characteristics of the solder bumps, which were previously mounted on the mounting board with the test device chip extracted from the product lot before mounting, are judged to be good, and the bumps of the strictly good product lot are selected. Only the formed chip is mounted on the mounting board and assembled as a product device, greatly improving the reliability and durability of the final product device. In addition, the thermal diffusion of metal atoms that make up the solder bumps and the underlying film is intentionally excessively advanced, and the deterioration of the bonding characteristics of the solder bumps is forcibly accelerated. It becomes possible to do.

As is clear from the above description, the present invention realizes a future semiconductor device manufacturing method which is designed based on fine design rules and requires high integration, high performance and high reliability. Can be very effectively contributed.

[Brief description of the drawings]

FIG. 1 shows a state in which a solder ball bump of a device chip is broken using a scissor-like physical inspection probe in a tensile fracture inspection step of a manufacturing process of a semiconductor device according to first and second embodiments of the present invention. It is a schematic sectional drawing (the 1).

FIG. 2 shows a state in which a solder ball bump of a device chip is broken using a scissor-like physical inspection probe in a tensile fracture inspection step of a manufacturing process of a semiconductor device according to first and second embodiments of the present invention. It is a schematic sectional drawing (the 2).

FIG. 3 shows a state in which a solder ball bump of a device chip is broken using a scissor-like physical inspection probe in a tensile fracture inspection step of a manufacturing process of a semiconductor device according to first and second embodiments of the present invention. It is a schematic sectional drawing (the 3).

FIG. 4 is a schematic cross-sectional view showing a state of a fracture surface in which a good solder bump has undergone ductile fracture in a tensile fracture inspection step of a semiconductor device manufacturing process according to the first and second embodiments of the present invention.

FIG. 5 is a schematic cross-sectional view showing a fracture surface in which a defective solder bump is brittlely fractured in a tensile fracture inspection step of a semiconductor device manufacturing process according to the first and second embodiments of the present invention.

FIG. 6 is a graph showing changes in the tensile breaking strength of non-defective / defective solder ball bumps and the occurrence rate of abnormalities in the bump fracture surface due to the characteristic deterioration accelerating step in the semiconductor device manufacturing process according to the second embodiment of the present invention. is there.

FIG. 7 illustrates a state in which a solder ball bump of a device chip is broken using a heatable rod-like physical inspection probe in a tensile fracture inspection step of a semiconductor device manufacturing process according to third and fourth embodiments of the present invention. FIG. 4 is a schematic sectional view (No. 1) showing

FIG. 8 illustrates a state in which a solder ball bump of a device chip is broken using a heatable rod-shaped physical inspection probe in a tensile fracture inspection step of a manufacturing process of a semiconductor device according to third and fourth embodiments of the present invention. It is a schematic sectional drawing (the 2) which shows.

FIG. 9 illustrates a state in which a solder ball bump of a device chip is broken using a heatable rod-shaped physical inspection probe in a tensile fracture inspection step of a manufacturing process of a semiconductor device according to third and fourth embodiments of the present invention. It is a schematic sectional drawing (the 3) which shows.

FIG. 10 shows a state in which a solder ball bump is fractured after mounting a flip chip on a printed wiring board of a device chip in a tensile breaking inspection step of a manufacturing process of a semiconductor device according to fifth and sixth embodiments of the present invention. It is the schematic sectional drawing (the 1) shown.

FIG. 11 is a partially enlarged view of FIG. 10;

FIG. 12 shows a state in which a solder ball bump is fractured after mounting a flip chip on a printed wiring board of a device chip in a tensile fracture inspection step of a semiconductor device manufacturing process according to the fifth and sixth embodiments of the present invention. It is the schematic sectional drawing (the 2) shown.

FIG. 13 is a partially enlarged view of FIG.

FIG. 14 is a process sectional view (No. 1) for describing the conventional semiconductor device manufacturing process.

FIG. 15 is a process sectional view (part 2) for describing the conventional semiconductor device manufacturing process.

FIG. 16 is a process sectional view (part 3) for describing the conventional semiconductor device manufacturing process.

FIG. 17 is a process sectional view (part 4) for describing the conventional semiconductor device manufacturing process.

FIG. 18 is a process sectional view (part 5) for describing the conventional semiconductor device manufacturing process.

FIG. 19 is a process sectional view (part 6) for describing the conventional semiconductor device manufacturing process.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 ... Semiconductor substrate, 12 ... Al electrode pad, 13 ... Silicon nitride film, 14 ... Polyimide film, 15 ... Passivation film, 16 ... BLM film, 17 ... Photoresist film, 1
8 Opening, 19 Solder Vapor Deposition Film, 20 Solder Ball Bump, 20a, 20b Solder Remaining Film, 21 Device Chip, 22 Printed Wiring Board, 23 Glass Epoxy Substrate, 24 Cu Land, 25 Eutectic solder film, 2
6: Solder resist film, 31, 32, 33: Physical measurement probe.

Claims (7)

[Claims] A solder bump forming step of forming a solder bump on an electrode pad portion of a device chip; and pulling up the solder bump in a direction substantially perpendicular to a main surface of the device chip to break the solder bump. A method for manufacturing a semiconductor device, comprising: a solder bump breaking step to be performed; and an inspection step of determining whether bonding characteristics of the solder bump are good or bad based on a probe load at a breaking limit of the solder bump. 2. A solder bump forming step of forming a solder bump on an electrode pad portion of a device chip, and pulling up the solder bump in a direction substantially perpendicular to a main surface of the device chip to break the solder bump. A method of manufacturing a semiconductor device, comprising: a solder bump breaking step to be performed; and an inspection step of determining whether bonding characteristics of the solder bump are good or bad based on a state of a fracture surface of the solder bump. 3. The method for manufacturing a semiconductor device according to claim 1, wherein in the solder bump breaking step, after the device chip is mounted on a mounting board via the solder bump, the device chip is removed. A method of manufacturing a semiconductor device, characterized by a step of pulling up the solder bump in a direction substantially perpendicular to the main surface of the mounting substrate to break the solder bump. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the step of breaking the solder bumps includes mounting the device chip on a mounting board via the solder bumps. Bonding a probe to the solder bump, raising the probe fixed to the solder bump in a direction substantially perpendicular to the main surface of the device chip, and breaking the solder bump. Manufacturing method of a semiconductor device. 5. The method for manufacturing a semiconductor device according to claim 1, wherein after the solder bump forming step and before the inspection step,
A method for manufacturing a semiconductor device, comprising a characteristic deterioration accelerating step of applying a predetermined heat treatment to the device chip to accelerately deteriorate the bonding characteristics of the solder bump. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the step of accelerating the characteristic deterioration includes:
50 hours to 200 at a temperature of 00 ° C to 300 ° C
A method for manufacturing a semiconductor device, comprising a step of applying a heat treatment for 0 hour. 7. The method for manufacturing a semiconductor device according to claim 1, wherein after the solder bump forming step and before the inspection step,
A step of accelerating a property deterioration of the solder bump by applying a predetermined heat treatment to the device chip, wherein the solder bump breaking step mounts the device chip via the solder bump. A method of manufacturing a semiconductor device, comprising a step of pulling up the device chip in a direction substantially perpendicular to a main surface of the mounting substrate after mounting the device chip on the substrate to break the solder bump.